Pecvd RF Discharge Models Review

1989 ◽  
Vol 165 ◽  
Author(s):  
Alan Garscadden

AbstractThis paper presents a concise and subjective summary of the rapid progress that has been made in the understanding of the essential features of RF discharges. The paper concentrates on introducing the important concepts used in modeling the rf discharge. The discharges have been modeled from several distinctly different approaches. These include circuit, beamdiffusion, plasma fluid or continuum, and particle kinetic models. The treatments have their usefulness depending on the application. The circuit models give easily parameterized results, power deposition, and phase angles between voltage and current, however, they do not describe the important plasma chemistry and the source terms for deposition and etching. The newer continuum models efficiently give self-consistent plasma parameters for higher pressure discharges but synergistic ion and neutral interactions with surfaces are difficult to include. The particle kinetic models can include many effects without approximations, however they need extensive data sets and long computer run times. The coupling of improved diagnostics and the different theories has resulted in a convergence of their conclusions. There are four distinct energy-gain mechanisms in the RF discharge : a bulk plasma excitation; electron beam excitation resulting from secondary emission from ion collisions with the electrodes; wave-riding acceleration on the sheath oscillation (collisional: Kushner); and a noncollisional plasma electron-sheath boundary interaction (Godyak). The relative contributions are sensitive functions of the gas mixture, pressure, frequency and RF voltage.

1999 ◽  
Vol 557 ◽  
Author(s):  
Alan Gallagher

AbstractParticle growth in silane RF discharges, and the incorporation of particles into hydrogenated-amorphous-silicon (a-Si:H) devices is described. These particles have a structure similar to a-Si:H, but their incorporation into the device is believed to yield harmful voids and interfaces. Measurements of particle density and growth in a silane RF plasma, for particle diameters of 8-50 nm, are described. This particle growth rate is very rapid, and decreases in density during the growth indicate a major flux of these size particles to the substrate. Particle densities are a very strong function of pressure, film growth rate and electrode gap, increasing orders of magnitude for small increases in each parameter. A full plasma- chemistry model for particle growth from SiHm radicals and ions has been developed, and is outlined. It yields particle densities and growth rates, as a function of plasma parameters, which are in qualitative agreement with the data. It also indicates that, in addition to the diameter >2 nm particles that have been observed in films, a very large flux of SixH,, molecular radicals with × >1 also incorporate into the film. It appears that these large radicals yield more than 1% of the film for typical device-deposition conditions, so this may have a serious effect on device properties.


1986 ◽  
Vol 68 ◽  
Author(s):  
Mark J. Kushner

AbstractAn integrated electron kinetics, plasma chemistry, and surface deposition model has been developed to study the relationship between film characteristics and plasma parameters in the plasma enhanced chemical vapor deposition (PECVD) of amorphous hydrogenated silicon (a–Si:H) in low pressure parallel plate RF discharges.The integrated model consists of a Monte-Carlo simulation for the electron distribution function in the RF discharge, a time and spatially dependent plasma chemistry model, and a model for the surface deposition process.The surface model consists of an accounting of the surface density of adsorbed species, and the fractional distribution of various types of bonds (e.g.Si–Si, Si–H, Si–.) in the film.The calculated distribution of radicals in silane discharges will first be discussed.The computed hydrogen content and deposition rates of a-Si:H films from silane and disilane discharges are next discussed and compared to experiment.The dependence of hydrogen content on Rf power and substrate temperature is calculated and agrees well with experiment.Mechanisms are proposed to explain these dependencies.


2021 ◽  
Vol 2114 (1) ◽  
pp. 012049
Author(s):  
Uday H. Tawfeeq ◽  
Ahmed K. Abbas ◽  
Kadhim A. Aadim

Abstract In this work, optical emission spectroscopy (OES) was used to estimate the parameters of plasma electron temperature (Te), electron density (ne), plasma frequency (fp), Debye length (λD), and Debye number (ND). Understanding how an energy pulsed laser affects these variables is also important. Irradiation of pure cadmium using an Nd: YAG laser pulse with a wavelength(1064)nm and energy ranging from (200-600)millijoules, of frequency (6) Hz. The spectrum of laser-induced plasma was detected under atmospheric pressure. It was discovered that when the energy of the laser pulse rises, the intensity of the CdI and CdII lines increases.


2015 ◽  
Vol 5 (1) ◽  
Author(s):  
Alexey Shashurin ◽  
David Scott ◽  
Taisen Zhuang ◽  
Jerome Canady ◽  
Isak I. Beilis ◽  
...  

Abstract Electric discharge utilized for electrosurgery is studied by means of a recently developed method for the diagnostics of small-size atmospheric plasma objects based on Rayleigh scattering of microwaves on the plasma volume. Evolution of the plasma parameters in the near-electrode sheaths and in the positive column is measured and analyzed. It is found that the electrosurgical system produces a glow discharge of alternating current with strongly contracted positive column with current densities reaching 103 A/cm2. The plasma electron density and electrical conductivities in the channel were found be 1016 cm−3 and (1-2) Ohm−1cm−1, respectively. The discharge interrupts every instance when the discharge-driving AC voltage crosses zero and re-ignites again every next half-wave at the moment when the instant voltage exceeds the breakdown threshold.


Materials ◽  
2020 ◽  
Vol 13 (9) ◽  
pp. 2147
Author(s):  
Žiga Gosar ◽  
Janez Kovač ◽  
Denis Đonlagić ◽  
Simon Pevec ◽  
Gregor Primc ◽  
...  

An extremely asymmetric low-pressure discharge was used to study the composition of thin films prepared by PECVD using HMDSO as a precursor. The metallic chamber was grounded, while the powered electrode was connected to an RF generator. The ratio between the surface area of the powered and grounded electrode was about 0.03. Plasma and thin films were characterised by optical spectroscopy and XPS depth profiling, respectively. Dense luminous plasma expanded about 1 cm from the powered electrode while a visually uniform diffusing plasma of low luminosity occupied the entire volume of the discharge chamber. Experiments were performed at HMDSO partial pressure of 10 Pa and various oxygen partial pressures. At low discharge power and small oxygen concentration, a rather uniform film was deposited at different treatment times up to a minute. In these conditions, the film composition depended on both parameters. At high powers and oxygen partial pressures, the films exhibited rather unusual behaviour since the depletion of carbon was observed at prolonged deposition times. The results were explained by spontaneous changing of plasma parameters, which was in turn explained by the formation of dust in the gas phase and corresponding interaction of plasma radicals with dust particles.


1988 ◽  
Vol 117 ◽  
Author(s):  
Kenji Ebihara ◽  
Seiji Kanazawa ◽  
Sadao Maeda

AbstractProcessing plasmas generated by three types of discharges are diagnosed spectroscopically in order to estimate the quantitative relationship between plasma parameters and electrical and optical properties of deposited materials. An rf discharge is capacitively produced by a 13.56 MHz rf oscillator. A microwave generator operating at 2.45 GHz is used to supply power to a discharge cavity. Further a pulsed plasma which is inductively generated by pulsed current ( 70 kA peak ) is applied to study dissociation process in the transient plasma and possibility of a novel processing system. The gases used are methane for amorphous carbon formation and silane for amorphous silicon deposition. Measurements of optical emission spectrum are performed to estimate the processing plasma state by the relative spectral intensity method and the Doppler-broadening method.


2012 ◽  
Vol 67 (1) ◽  
pp. 97-101 ◽  
Author(s):  
K. V. Vavilin ◽  
M. A. Gomorev ◽  
E. A. Kralkina ◽  
P. A. Nekludova ◽  
V. B. Pavlov ◽  
...  

1984 ◽  
Vol 38 ◽  
Author(s):  
R. M. Roth ◽  
K. G. Spears ◽  
G. Wong

AbstractA capacitively coupled rf glow discharge of silane in argon was studied to determine the spatial concentration of silicon atoms. Laserinduced fluorescence was used to determine the ground state concentration profiles. The fluorescence profiles clearly show the sharp boundaries of the sheath regions. The dc bias voltage, silane mole fractions, flow rates, and chamber pressure were all varied to establish the sensitivity of the silane profiles. The existing theory of sheath formation is used to qualitatively understand the existence of sharp spatial boundaries and the sensitivity of the anode sheath region to plasma chemistry.


2016 ◽  
Vol 18 (18) ◽  
pp. 13033-13044 ◽  
Author(s):  
B. B. Sahu ◽  
Y. Y. Yin ◽  
T. Tsutsumi ◽  
M. Hori ◽  
Jeon G. Han

A correlation study of plasma parameters and film properties and the implication of dual frequency PECVD for industry are proposed.


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