scholarly journals PECVD of Hexamethyldisiloxane Coatings Using Extremely Asymmetric Capacitive RF Discharge

Materials ◽  
2020 ◽  
Vol 13 (9) ◽  
pp. 2147
Author(s):  
Žiga Gosar ◽  
Janez Kovač ◽  
Denis Đonlagić ◽  
Simon Pevec ◽  
Gregor Primc ◽  
...  

An extremely asymmetric low-pressure discharge was used to study the composition of thin films prepared by PECVD using HMDSO as a precursor. The metallic chamber was grounded, while the powered electrode was connected to an RF generator. The ratio between the surface area of the powered and grounded electrode was about 0.03. Plasma and thin films were characterised by optical spectroscopy and XPS depth profiling, respectively. Dense luminous plasma expanded about 1 cm from the powered electrode while a visually uniform diffusing plasma of low luminosity occupied the entire volume of the discharge chamber. Experiments were performed at HMDSO partial pressure of 10 Pa and various oxygen partial pressures. At low discharge power and small oxygen concentration, a rather uniform film was deposited at different treatment times up to a minute. In these conditions, the film composition depended on both parameters. At high powers and oxygen partial pressures, the films exhibited rather unusual behaviour since the depletion of carbon was observed at prolonged deposition times. The results were explained by spontaneous changing of plasma parameters, which was in turn explained by the formation of dust in the gas phase and corresponding interaction of plasma radicals with dust particles.

2004 ◽  
Vol 4 (8) ◽  
pp. 2083-2089 ◽  
Author(s):  
A. Asad ◽  
B. T. Mmereki ◽  
D. J. Donaldson

Abstract. A quartz crystal microbalance apparatus has been used to measure the room temperature uptake of water vapour by thin films of oleic acid as a function of relative humidity, both before and following exposure of the films to various partial pressures of gas phase ozone. A rapid increase in the water-sorbing ability of the film is observed as its exposure to ozone is increased, followed by a plateau region in which additional water is taken up more gradually. In this fully-processed region the mass of water taken up by the film is about 4 times that of the unprocessed film. Infrared spectra of the films, measured after variable exposures to ozone, show dramatic increases in both the "free" and hydrogen-bonded O-H stretching regions, and a decrease in the intensity of olefinic features. These results are consistent with the formation of an oxygenated polymeric product or products, as well as the gas phase products previously identified.


2004 ◽  
Vol 4 (4) ◽  
pp. 4019-4038 ◽  
Author(s):  
A. Asad ◽  
B. T. Mmereki ◽  
D. J. Donaldson

Abstract. A quartz crystal microbalance apparatus has been used to measure the room temperature uptake of water vapour by thin films of oleic acid as a function of relative humidity, both before and following exposure of the films to various partial pressures of gas phase ozone. A rapid increase in the water-sorbing ability of the film is observed as its exposure to ozone is increased, followed by a plateau region in which no additional water is taken up. In this fully-processed region the mass of water taken up by the film is about 4 times that of the unprocessed film. Infrared spectra of the films, measured after variable exposures to ozone, show dramatic increases in both the "free" and hydrogen-bonded O-H stretching regions, and a decrease in the intensity of olefinic features. These results are consistent with the formation of an oxygenated polymeric product or products, as well as the gas phase products previously identified.


1988 ◽  
Vol 53 (12) ◽  
pp. 2995-3013
Author(s):  
Emerich Erdös ◽  
Jindřich Leitner ◽  
Petr Voňka ◽  
Josef Stejskal ◽  
Přemysl Klíma

For a quantitative description of the epitaxial growth rate of gallium arsenide, two models are proposed including two rate controlling steps, namely the diffusion of components in the gas phase and the surface reaction. In the models considered, the surface reaction involves a reaction triple - or quadruple centre. In both models three mechanisms are considered which differ one from the other by different adsorption - and impact interaction of reacting particles. In every of the six cases, the pertinent rate equations were derived, and the models have been confronted with the experimentally found dependences of the growth rate on partial pressures of components in the feed. The results are discussed with regard to the plausibility of individual mechanisms and of both models, and also with respect to their applicability and the direction of further investigations.


Materials ◽  
2021 ◽  
Vol 14 (7) ◽  
pp. 1595
Author(s):  
Nomin Lim ◽  
Yeon Sik Choi ◽  
Alexander Efremov ◽  
Kwang-Ho Kwon

This research work deals with the comparative study of C6F12O + Ar and CF4 + Ar gas chemistries in respect to Si and SiO2 reactive-ion etching processes in a low power regime. Despite uncertain applicability of C6F12O as the fluorine-containing etchant gas, it is interesting because of the liquid (at room temperature) nature and weaker environmental impact (lower global warming potential). The combination of several experimental techniques (double Langmuir probe, optical emission spectroscopy, X-ray photoelectron spectroscopy) allowed one (a) to compare performances of given gas systems in respect to the reactive-ion etching of Si and SiO2; and (b) to associate the features of corresponding etching kinetics with those for gas-phase plasma parameters. It was found that both gas systems exhibit (a) similar changes in ion energy flux and F atom flux with variations on input RF power and gas pressure; (b) quite close polymerization abilities; and (c) identical behaviors of Si and SiO2 etching rates, as determined by the neutral-flux-limited regime of ion-assisted chemical reaction. Principal features of C6F12O + Ar plasma are only lower absolute etching rates (mainly due to the lower density and flux of F atoms) as well as some limitations in SiO2/Si etching selectivity.


Author(s):  
Amal Ben Hadj Mabrouk ◽  
Christophe Licitra ◽  
Antoine Chateauminois ◽  
Marc Veillerot

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