Structure and Phase Transformations in Thermoelastic Ni(1−x)TiCux) Thin Films Prepared by D.C. Magnetron Sputtering.

1990 ◽  
Vol 187 ◽  
Author(s):  
L. Chang ◽  
C. Hu-Simpsono ◽  
D. S. Grummon ◽  
W. Pratt ◽  
R. loloee
Keyword(s):  
Thin Films ◽  
Magnetron Sputtering ◽  
Phase Transformations ◽  
Photoelectron Spectroscopy ◽  
Single Layer ◽  
Scanning Calorimetry ◽  
X Ray ◽  
Sputtered Films ◽  
Transmission Electron ◽  
Shape Memory Effects

AbstractThe intermetallic compound NiTi and its copper containing variants, Ni(1−x)TiCu(x), are capableof stress induced displacive tansformations which give rise to superelasticity and shape-memory effects. Thin films of these alloys, which may find use as sensors, microactuators, or as protective surface microalloys, are of increasing interest. In this study, thin films in the Ni(1−x)TiCUx) system, ranging in thickness from 250 nm to 5 μm, were prepared with a triode-type D.C. magnetron sputtering apparatus using a ternary alloy target. Both homogeneous films and periodic multilayer structures (with interspersed Ti-rich layers) were fabricated. of particular interest were shifts in composition with respect to the target, and the structural and phase transformation characteristics of the sputtered films. These phenomena were examined using transmission electron microscopy, X-ray photoelectron spectroscopy (XPS), and energy dispersive X-ray microanalysis. Transformation temperatures and enthalpies were determined by differential scanning calorimetry and confirmed by 4-point D.C. resistivity measurements. The as-sputtered films were amorphousbut crystallized during annealing at 923K. Electron diffraction and XPS data suggested the presence of oxygen. Single layer film compositions were shifted to slightly lower Ti fractions which depressed the onset of the transformation sequence by ˜35K and degraded phase stability during annealing. It was possible, however, to produce periodic multilayer films which showed evidence of thermoelastic phase transformations during DSC, resistivity, and in-situ TEM experiments. These films were stable with respect to vacuum annealing at 923 K for 6 h.

scholarly journals Reactive Dual Magnetron Sputtering: A Fast Method for Preparing Stoichiometric Microcrystalline ZnWO4 Thin Films

Surfaces ◽  
2021 ◽  
Vol 4 (2) ◽  
pp. 106-114
Author(s):  
Yannick Hermans ◽  
Faraz Mehmood ◽  
Kerstin Lakus-Wollny ◽  
Jan P. Hofmann ◽  
Thomas Mayer ◽  
...  
Keyword(s):  
Thin Films ◽  
Magnetron Sputtering ◽  
Photoelectron Spectroscopy ◽  
Fast Method ◽  
X Ray Diffraction ◽  
X Ray ◽  
Glass Substrates ◽  
Post Annealing ◽  
Rf Signal ◽  
First Time

Thin films of ZnWO4, a promising photocatalytic and scintillator material, were deposited for the first time using a reactive dual magnetron sputtering procedure. A ZnO target was operated using an RF signal, and a W target was operated using a DC signal. The power on the ZnO target was changed so that it would match the sputtering rate of the W target operated at 25 W. The effects of the process parameters were characterized using optical spectroscopy, X-ray diffraction, and scanning electron microscopy, including energy dispersive X-ray spectroscopy as well as X-ray photoelectron spectroscopy. It was found that stoichiometric microcrystalline ZnWO4 thin films could be obtained, by operating the ZnO target during the sputtering procedure at a power of 55 W and by post-annealing the resulting thin films for at least 10 h at 600 °C. As FTO coated glass substrates were used, annealing led as well to the incorporation of Na, resulting in n+ doped ZnWO4 thin films.

scholarly journals Surface Stoichiometry and Depth Profile of Tix-CuyNz Thin Films Deposited by Magnetron Sputtering

Materials ◽  
2021 ◽  
Vol 14 (12) ◽  
pp. 3191
Author(s):  
Arun Kumar Mukhopadhyay ◽  
Avishek Roy ◽  
Gourab Bhattacharjee ◽  
Sadhan Chandra Das ◽  
Abhijit Majumdar ◽  
...  
Keyword(s):  
Magnetron Sputtering ◽  
Photoelectron Spectroscopy ◽  
Film Surface ◽  
Grazing Incidence ◽  
X Ray Diffraction ◽  
X Ray ◽  
Relative Composition ◽  
Transmission Electron ◽  
Deposited Film ◽  
Deposited Films

We report the surface stoichiometry of Tix-CuyNz thin film as a function of film depth. Films are deposited by high power impulse (HiPIMS) and DC magnetron sputtering (DCMS). The composition of Ti, Cu, and N in the deposited film is investigated by X-ray photoelectron spectroscopy (XPS). At a larger depth, the relative composition of Cu and Ti in the film is increased compared to the surface. The amount of adventitious carbon which is present on the film surface strongly decreases with film depth. Deposited films also contain a significant amount of oxygen whose origin is not fully clear. Grazing incidence X-ray diffraction (GIXD) shows a Cu3N phase on the surface, while transmission electron microscopy (TEM) indicates a polycrystalline structure and the presence of a Ti3CuN phase.

scholarly journals Resistive Switching Characteristics of Li-Doped ZnO Thin Films Based on Magnetron Sputtering

Materials ◽  
2019 ◽  
Vol 12 (8) ◽  
pp. 1282 ◽  
Author(s):  
Zhao ◽  
Li ◽  
Ai ◽  
Wen
Keyword(s):  
Thin Films ◽  
Magnetron Sputtering ◽  
Resistive Switching ◽  
Photoelectron Spectroscopy ◽  
Lattice Structure ◽  
Zno Thin Films ◽  
Bipolar Resistive Switching ◽  
X Ray ◽  
Doped Zno ◽  
Switching Characteristics

A kind of devices Pt/Ag/ZnO:Li/Pt/Ti with high resistive switching behaviors were prepared on a SiO2/Si substrate by using magnetron sputtering method and mask technology, composed of a bottom electrode (BE) of Pt/Ti, a resistive switching layer of ZnO:Li thin film and a top electrode (TE) of Pt/Ag. To determine the crystal lattice structure and the Li-doped concentration in the resulted ZnO thin films, X-ray diffraction (XRD) and X-ray photoelectron spectroscopy (XPS) tests were carried out. Resistive switching behaviors of the devices with different thicknesses of Li-doped ZnO thin films were studied at different set and reset voltages based on analog and digital resistive switching characteristics. At room temperature, the fabricated devices represent stable bipolar resistive switching behaviors with a low set voltage, a high switching current ratio and a long retention up to 104 s. In addition, the device can sustain an excellent endurance more than 103 cycles at an applied pulse voltage. The mechanism on how the thicknesses of the Li-doped ZnO thin films affect the resistive switching behaviors was investigated by installing conduction mechanism models. This study provides a new strategy for fabricating the resistive random access memory (ReRAM) device used in practice.

Characterization of the Phase Transformations in the Shape Memory Alloy Ni-36 at.% Al

1991 ◽  
Vol 246 ◽  
Author(s):  
J.A. Horton ◽  
E.P. George ◽  
C.J. Sparks ◽  
M.Y. Kao ◽  
O.B. Cavin ◽  
...  
Keyword(s):  
High Temperature ◽  
Shape Memory ◽  
Phase Transformations ◽  
Hot Extrusion ◽  
Exothermic Peak ◽  
Nickel Aluminum ◽  
X Ray Diffraction ◽  
Scanning Calorimetry ◽  
X Ray ◽  
Transmission Electron

AbstractA survey by differential scanning calorimetry (DSC) and recovery during heating of indentations on a series of nickel-aluminum alloys showed that the Ni-36 at.% Al composition has the best potential for a recoverable shape memory effect at temperatures above 100°C. The phase transformations were studied by high temperature transmission electron microscopy (TEM) and by high temperature x-ray diffraction (HTXRD). Quenching from 1200°C resulted in a single phase, fully martensitic structure. The initial quenched-in martensites were found by both TEM and X-ray diffraction to consist of primarily a body centered tetragonal (bct) phase with some body centered orthorhombic (bco) phase present. On the first heating cycle, DSC showed an endothermic peak at 121°C and an exothermic peak at 289°C, and upon cooling a martensite exothermic peak at 115° C. Upon subsequent cycles the 289°C peak disappeared. High temperature X-ray diffraction, with a heating rate of 2°C/min, showed the expected transformation of bct phase to B2 between 100 and 200°C, however the bco phase remained intact. At 400 to 450°C the B2 phase transformed to Ni2Al and Ni5Al3. During TEM heating experiments a dislocation-free martensite transformed reversibly to B2 at temperatures less than 150°C. At higher temperatures (nearly 600°C) 1/3, 1/3, 1/3 reflections from an ω-like phase formed. Upon cooling, the 1/3, 1/3, 1/3 reflections disappeared and a more complicated martensite resulted. Boron additions suppressed intergranular fracture and, as expected, resulted in no ductility improvements. Boron additions and/or hot extrusion encouraged the formation of a superordered bct structure with 1/2, 1/2, 0 reflections.

scholarly journals Comparative Study of ZnO Thin Films Grown on Quartz Glass and Sapphire (001) Substrates by Means of Magnetron Sputtering and High-Temperature Annealing

2019 ◽  
Vol 9 (21) ◽  
pp. 4509
Author(s):  
Weijia Yang ◽  
Fengming Wang ◽  
Zeyi Guan ◽  
Pengyu He ◽  
Zhihao Liu ◽  
...  
Keyword(s):  
Thin Films ◽  
High Temperature ◽  
Magnetron Sputtering ◽  
Comparative Study ◽  
Quartz Glass ◽  
Photoelectron Spectroscopy ◽  
Zno Thin Films ◽  
High Temperature Annealing ◽  
X Ray ◽  
Glass Substrates

In this work, we reported a comparative study of ZnO thin films grown on quartz glass and sapphire (001) substrates through magnetron sputtering and high-temperature annealing. Firstly, the ZnO thin films were deposited on the quartz glass and sapphire (001) substrates in the same conditions by magnetron sputtering. Afterwards, the sputtered ZnO thin films underwent an annealing process at 600 °C for 1 h in an air atmosphere to improve the quality of the films. X-ray diffraction, scanning electron microscopy, atomic force microscopy, X-ray photoelectron spectroscopy (XPS), ultraviolet-visible spectra, photoluminescence spectra, and Raman spectra were used to investigate the structural, morphological, electrical, and optical properties of the both as-received ZnO thin films. The ZnO thin films grown on the quartz glass substrates possess a full width of half maximum value of 0.271° for the (002) plane, a surface root mean square value of 0.50 nm and O vacancies/defects of 4.40% in the total XPS O 1s peak. The comparative investigation reveals that the whole properties of the ZnO thin films grown on the quartz glass substrates are comparable to those grown on the sapphire (001) substrates. Consequently, ZnO thin films with high quality grown on the quartz glass substrates can be achieved by means of magnetron sputtering and high-temperature annealing at 600 °C.

The piezoresistive properties research of SiC thin films prepared by RF magnetron sputtering

2019 ◽  
Vol 33 (15) ◽  
pp. 1950152 ◽  
Author(s):  
Jing Wu ◽  
Xiaofeng Zhao ◽  
Chunpeng Ai ◽  
Zhipeng Yu ◽  
Dianzhong Wen
Keyword(s):  
Thin Films ◽  
Magnetron Sputtering ◽  
Cantilever Beam ◽  
Photoelectron Spectroscopy ◽  
Film Surface ◽  
Rf Magnetron Sputtering ◽  
Micro Electro Mechanical System ◽  
Gauge Factor ◽  
X Ray ◽  
Sputtering Power

To research the piezoresistive properties of SiC thin films, a testing structure consisting of a cantilever beam, SiC thin films piezoresistors and a Cr/Pt electrode is proposed in this paper. The chips of testing structure were fabricated by micro-electro-mechanical system (MEMS) technology on a silicon wafer with [Formula: see text]100[Formula: see text] orientation, in which SiC thin films were deposited by using radio-frequency (13.56 MHz) magnetron sputtering method. The effect of sputtering power, annealing temperature and time on the microstructure and morphology of the SiC thin films were investigated by the X-ray diffraction (XRD) and scanning electron microscopy (SEM). It indicates that a good continuity and uniform particles on the SiC thin film surface can be achieved at sputtering power of 160 W after annealing. To verify the existence of Si–C bonds in the thin films, X-ray photoelectron spectroscopy (XPS) was used. Meanwhile, the piezoresistive properties of SiC thin films piezoresistors were measured using the proposed cantilever beam. The test result shows that it is possible to achieve a gauge factor of 35.1.

Limitations to the use of Sb as a Surfactant During SiGe MBE

1998 ◽  
Vol 533 ◽  
Author(s):  
Glenn G. Jernigan ◽  
Conrad L. Silvestre ◽  
Mohammad Fatemi ◽  
Mark E. Twigg ◽  
Phillip E. Thompson
Keyword(s):  
Electron Microscopy ◽  
Thin Films ◽  
Transmission Electron Microscopy ◽  
Quantum Well ◽  
Photoelectron Spectroscopy ◽  
Surface Coverage ◽  
X Ray Diffraction ◽  
X Ray ◽  
Transmission Electron ◽  
Alloy Concentration

AbstractThe use of Sb as a surfactant in suppressing Ge segregation during SiGe alloy growth was investigated as a function of Sb surface coverage, Ge alloy concentration, and alloy thickness using xray photoelectron spectroscopy, x-ray diffraction, and transmission electron microscopy. Unlike previous studies where Sb was found to completely quench Ge segregation into a Si capping layer, we find that Sb can not completely prevent Ge segregation while Si and Ge are being co-deposited. This results in the production of a non-square quantum well with missing Ge at the beginning and extra Ge at the end of the alloy. We also found that Sb does not relieve strain in thin films but does result in compositional or strain variations within thick alloy layers.

scholarly journals Surface Stoichiometry and Optical Properties of Cux–TiyCz Thin Films Deposited by Magnetron Sputtering

Coatings ◽  
2019 ◽  
Vol 9 (9) ◽  
pp. 551 ◽  
Author(s):  
Avishek Roy ◽  
Arun Kumar Mukhopadhyay ◽  
Sadhan Chandra Das ◽  
Gourab Bhattacharjee ◽  
Abhijit Majumdar ◽  
...  
Keyword(s):  
Thin Films ◽  
Optical Properties ◽  
Magnetron Sputtering ◽  
Photoelectron Spectroscopy ◽  
Metal Matrix ◽  
Optical Band Gap ◽  
Matrix Composites ◽  
X Ray ◽  
Peak Intensity ◽  
Ternary Carbide

Ternary carbide in metal matrix composites constitute a big challenge in the industry, and in this regard their surface treatment is one of the most important issues. Ternary carbide (CuxTiyCz, where x, y and z are integers) thin films are synthesized by magnetron sputtering and characterized with respect to the film depth. X-ray photoelectron spectroscopy (XPS) of Cu-2p and Ti-2p peaks shows the associated shake-up satellite peaks at a smaller film depth; the peak intensity is reduced at a higher depth. The relative intensity of Cu and Ti increases at a larger film depth. The optical band gap varies from 1.83 to 2.20 eV at different film depths.

Synthesis and Characterization of Nb-Doped TiO2 Thin Films Prepared by RF Magnetron Sputtering

2015 ◽  
Vol 1117 ◽  
pp. 139-142 ◽  
Author(s):  
Marius Dobromir ◽  
Radu Paul Apetrei ◽  
A.V. Rogachev ◽  
Dmitry L. Kovalenko ◽  
Dumitru Luca
Keyword(s):  
Thin Films ◽  
Magnetron Sputtering ◽  
Photoelectron Spectroscopy ◽  
Rf Magnetron Sputtering ◽  
X Ray ◽  
Force Microscopy ◽  
Glass Substrates ◽  
Atomic Force ◽  
Vis Spectroscopy ◽  
Diffraction Patterns

Amorphous Nb-doped TiO2 thin films were deposited on (100) Si and glass substrates at room temperature by RF magnetron sputtering and a mosaic-type Nb2O5-TiO2 sputtering target. To adjust the amount of the niobium dopant in the film samples, appropriate numbers of Nb2O5 pellets were placed on the circular area of the magnetron target with intensive sputtering. By adjusting the discharge conditions and the number of niobium oxide pellets, films with dopant content varying between 0 and 16.2 at.% were prepared, as demonstrated by X-ray photoelectron spectroscopy data. The X-ray diffraction patterns of the as-deposited samples showed the lack of crystalline ordering in the samples. Surfaces roughness and energy band gap values increase with dopant concentration, as showed by atomic force microscopy and UV-Vis spectroscopy measurements.

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