Investigation into the Thin-Film Fabrication of Intermetallic NiTi

1990 ◽  
Vol 187 ◽  
Author(s):  
A. Peter Jardine ◽  
Hong Zhang ◽  
Lysa D. Wasielesky
Keyword(s):  
Thin Film ◽  
Electron Microscopy ◽  
Chemical Separation ◽  
X Ray Diffraction ◽  
X Ray ◽  
Thin Film Fabrication ◽  
Sapphire Substrates ◽  
Crystal Phases ◽  
Film Fabrication ◽  
Scanning Electron

AbstractThin-films of Ni and Ti were formed by sputter co-deposition of Ni and Ti onto amorphous SiO2 and single crystal NaCl and Sapphire substrates. Films were characterized as follows: a) The chemical composition of the films was analysed by EDAX b) The gross morphology was examined by Scanning Electron Microscopy. c) The crystal phases were indentified by X-ray diffraction and Electron diffraction. Intermetallic NiTi has been identified in samples annealed in vacuo at 850°C. Annealing at 500°C in vacuum produced chemical separation of the Ni and Ti. This effect may be due to a narrow solidus region for the existence of NiTi and inhomogeneities due to uneven deposition of the Ni and Ti.

scholarly journals Superconducting YBaCuO thin Films by Cu-Ion Implantation

1990 ◽  
Vol 201 ◽  
Author(s):  
Kevin M. Hubbard ◽  
Nicole Bordes ◽  
Michael Nastasi ◽  
Joseph R. Tesmer
Keyword(s):  
Thin Film ◽  
Electron Microscopy ◽  
Thin Films ◽  
Scanning Electron Microscopy ◽  
Ion Implantation ◽  
Normal State ◽  
Ion Beam ◽  
X Ray Diffraction ◽  
X Ray ◽  
Scanning Electron

AbstractWe have investigated the fabrication of thin-film superconductors by Cu-ion implantation into initially Cu-deficient Y(BaF2)Cu thin films. The precursor films were co-evaporated on SrTiO3 substrates, and subsequently implanted to various doses with 400 keV 63Cu2+. Implantations were preformed at both LN2 temperature and at 380°C. The films were post-annealed in oxygen, and characterized as a function of dose by four-point probe analysis, X-ray diffraction, ion-beam backscattering and channeling, and scanning electron microscopy. It was found that a significant improvement in film quality could be achieved by heating the films to 380°C during the implantation. The best films became fully superconducting at 60–70 K, and exhibited good metallic R vs. T. behavior in the normal state.

Ferroelectric properties in all solution prepared Bi6Fe2Ti3O18/Ba0.92La0.08SnO3 thin films

2016 ◽  
Vol 30 (35) ◽  
pp. 1650394
Author(s):  
Li Zhang ◽  
Yibao Li ◽  
Zhen Tang ◽  
Yan Deng ◽  
Hui Yuan ◽  
...  
Keyword(s):  
Thin Film ◽  
Electron Microscopy ◽  
Thin Films ◽  
Scanning Electron Microscopy ◽  
Coercive Field ◽  
Ferroelectric Properties ◽  
X Ray Diffraction ◽  
X Ray ◽  
Transparent Conducting ◽  
Scanning Electron

In this paper, all solution processing is used to prepare both the transparent conducting Ba[Formula: see text]La[Formula: see text]SnO3 (BLSO) thin films as bottom electrodes and ferroelectric Bi6Fe2Ti3O[Formula: see text] (BFTO) thin films. The derived BFTO thin films are characterized by X-ray diffraction (XRD) and field-emission scanning electron microscopy (FE-SEM). The derived thin film is polycrystalline with dense microstructures. The remnant polarization [Formula: see text] at the measurement frequency of 2 kHz can reach [Formula: see text] under the 500 kV/cm electric field and the coercive field [Formula: see text] is 410 kV/cm. The results will provide a feasible route to prepare BFTO thin films on transparent conducting bottom electrodes to realize multifunctionality.

Thin-film reactions of Al with Co, Cr, Mo, Ta, Ti, and W

1989 ◽  
Vol 4 (4) ◽  
pp. 815-820 ◽  
Author(s):  
E. G. Colgan ◽  
J. W. Mayer
Keyword(s):  
Thin Film ◽  
Electron Microscopy ◽  
Scanning Electron Microscopy ◽  
Phase Diagrams ◽  
Refractory Metals ◽  
Rutherford Backscattering ◽  
Phase Identification ◽  
X Ray Diffraction ◽  
X Ray ◽  
Scanning Electron

The thin-film interactions of Al with refractory metals (Co, Cr, Mo, Ta, Ti, and W) have been investigated. The composition and thickness of the reacted aluminide layers were determined by Rutherford backscattering and phase identification was made by x-ray diffraction. Scanning electron microscopy was used to examine the lateral uniformity. The initial aluminide phases to grow are the Al-rich phases: Co2Al9, Cr2Al13, MoAl12, TaAl3, TiAl3, and WAI12. These are the most Al-rich phases on the phase diagrams. The reaction temperatures varied between 350 and 525 °C.

A study on materials interactions between Mo electrode and InGaZnO active layer in InGaZnO-based thin film transistors

2010 ◽  
Vol 25 (2) ◽  
pp. 266-271 ◽  
Author(s):  
Kyung Park ◽  
Chee-Hong An ◽  
Byung-Il Hwang ◽  
Hoo-Jeong Lee ◽  
Hyoungsub Kim ◽  
...  
Keyword(s):  
Thin Film ◽  
Electron Microscopy ◽  
Thin Film Transistors ◽  
Device Performance ◽  
X Ray Diffraction ◽  
Characterization Methods ◽  
X Ray ◽  
Thermodynamics And Kinetics ◽  
Transmission Electron ◽  
Scanning Electron

This study examined the degradation of the device performance of InGaZnO4 (IGZO)-based thin-film transistors after annealing at high temperatures in air ambient. Using various characterization methods including scanning electron microscopy, x-ray diffraction, and transmission electron microscopy, we were able to disclose the details of a two-stage phase transformation that led to the device performance degradation. The Mo electrodes first succumbed to oxidation at moderate temperatures (400∼500 °C) and then the Mo oxide further reacted with IGZO to produce an In–Mo–O compound with some Ga at higher temperatures (600∼700 °C). We analyzed our results based on the thermodynamics and kinetics data available in the literature and confirmed that our findings are in agreement with the experimental results.

The Influence of Zirconia Substrate Temperature on the Microstructure and Adhesion of Deposited Mg Films

2012 ◽  
Vol 472-475 ◽  
pp. 2834-2838
Author(s):  
Fei Xiong Mao ◽  
Tao Liu ◽  
Shi Wei Liu ◽  
Jing Kun Yu
Keyword(s):  
Thin Film ◽  
Electron Microscopy ◽  
Substrate Temperature ◽  
Hexagonal Phase ◽  
X Ray Diffraction ◽  
X Ray ◽  
Adhesion Performance ◽  
Substrate Temperatures ◽  
Scanning Electron

Mg films were prepared by magnetron sputtering on zirconia substrate. The surface morphology, structure and adhesion performance were determined by scanning electron microscopy (SEM), X-ray diffraction (XRD) and automatic nano scratch tester, respectively. The results show that the Mg films deposited on the substrates at 50 °C, 200 °C, 300 °C are mainly of hexagonal phase with the crystal planes (002) in highly preferred orientation that is weaken with the substrate temperature increased. After annealed at 230 °C, the quality of thin film deposited on the substrate at 50 °C can be improved as crystallizability enhanced and grain size increased. The adhesion of Mg film increases firstly, and then decreases with increasing the substrate temperatures.

MOCVD of CuInE2 (Where E = S or Se) and Related Materials for Solar Cell Devices

1999 ◽  
Vol 606 ◽  
Author(s):  
Michael Kemmler ◽  
Michael Lazell ◽  
Paul O'brien ◽  
David J. Otwaya
Keyword(s):  
Thin Film ◽  
Electron Microscopy ◽  
Scanning Electron Microscopy ◽  
Vapour Deposition ◽  
Chemical Vapour ◽  
Organic Chemical ◽  
X Ray Diffraction ◽  
X Ray ◽  
Metal Organic ◽  
Scanning Electron

AbstractThin film(s) of chalcopyrite CuInE2(where E = S or Se) have been grown by low-pressure metal-organic chemical vapour deposition (LP-MOCVD) using the precursors [In(E2CNMenHexyl)3] and [Cu(E2CNMenHexyl)2]. Similarly, thin films of ME (where M = Zn, Cd; E = S, Se) have been deposited from precursors of general formula [M(E2CNMenHex)2]x. Films were grown on glass between 400 - 500 °C, and characterized by X-ray diffraction, optical spectroscopy (UV/Vis), EDAX and scanning electron microscopy.

scholarly journals Prussian Blue and Carbon-Dot Hybrids for Enhanced Electrochromic Performance

Materials ◽  
2021 ◽  
Vol 14 (12) ◽  
pp. 3166
Author(s):  
Jia Chu ◽  
Yaping Cheng ◽  
Xue Li ◽  
Fan Yang ◽  
Shanxin Xiong ◽  
...  
Keyword(s):  
Thin Film ◽  
Electron Microscopy ◽  
Prussian Blue ◽  
X Ray Diffraction ◽  
Optical Contrast ◽  
Carbon Dot ◽  
X Ray ◽  
Bleaching Response ◽  
One Step ◽  
Scanning Electron

In this study, Prussian blue@Carbon-dot (PB@C-dot) hybrids have been developed by one-step hydrothermal method. The incorporation of C-dots into Prussian blue thin film as a way of improving its electrochromic performance was investigated. The structure of the PB@C-dot hybrid was characterized through X-ray diffraction, Raman spectroscopy and scanning electron microscopy. The electrochromic properties showed that incorporation of 10 mL C-dots into the film showed higher optical contrast of 1.6 and superior coloration/bleaching response of 10 and 3 s. It is proposed that the C-dots component used in the construction of the PB@C-dot hybrid plays a key role to achieve superior electrochromic performance.

Structural and Optical Properties of Cu2MnSnS4 Thin Film Fabricated by Sol-Gel Technique

2015 ◽  
Vol 814 ◽  
pp. 39-43 ◽  
Author(s):  
Lei Lei Chen ◽  
Hong Mei Deng ◽  
Ke Zhi Zhang ◽  
Ling Huang ◽  
Jian Liu ◽  
...  
Keyword(s):  
Thin Film ◽  
Electron Microscopy ◽  
Scanning Electron Microscopy ◽  
Sol Gel ◽  
X Ray Diffraction ◽  
X Ray ◽  
Force Microscopy ◽  
Atomic Force ◽  
Gel Technique ◽  
Scanning Electron

Cu2MnSnS4 thin film was successfully prepared by a sol-gel technique on soda lime glass substrate from metal salts and thiourea. The structural and morphological properties of the fabricated film were characterized by X-ray diffraction, Raman spectroscopy, scanning electron microscopy and atomic force microscopy. The combination of the X-ray diffraction results and Raman spectroscopy reveal that this obtained layer is composed by Cu2MnSnS4 phase and has a stannite structure with preferential orientation along the (112) direction. The scanning electron microscopy and atomic force microscopy results show that the synthesized thin film is smooth and compact without any visible cracks or pores. The band gap of the Cu2MnSnS4 thin film is about 1.29 eV determined by the UV-vis-NIR absorption spectra measurement, which indicates it has potential applications in solar cells.

Ga2O3 Films Grown on Sapphire by the Thermal Evaporation of GaN Powders

2007 ◽  
Vol 336-338 ◽  
pp. 637-639
Author(s):  
Hyoun Woo Kim ◽  
Ju Hyun Myung
Keyword(s):  
Electron Microscopy ◽  
Scanning Electron Microscopy ◽  
Gallium Oxide ◽  
Thermal Evaporation ◽  
Blue Emission ◽  
Monoclinic Structure ◽  
X Ray Diffraction ◽  
X Ray ◽  
Sapphire Substrates ◽  
Scanning Electron

We have prepared the gallium oxide (Ga2O3) films on sapphire substrates by a thermal evaporation of GaN powders. We have characterized the films by using the x-ray diffraction (XRD), scanning electron microscopy (SEM), and the photoluminescence (PL). SEM and XRD revealed that the deposits were Ga2O3 thin films with monoclinic structure. PL spectrum of Ga2O3 films under excitation at 325 nm showed a blue emission.

Response Frequency Characteristic under Loop Stress for the Material Deposited NiTi SMA Thin Film on PZT Substrate

2013 ◽  
Vol 364 ◽  
pp. 809-813
Author(s):  
Qing Suo Liu ◽  
Cui Min Lu ◽  
Lian Jie Yuan ◽  
Wei Wei Yang
Keyword(s):  
Thin Film ◽  
Electron Microscopy ◽  
Frequency Characteristic ◽  
Frequency Range ◽  
X Ray Diffraction ◽  
Response Frequency ◽  
X Ray ◽  
Niti Sma ◽  
Equiaxed Grains ◽  
Scanning Electron

The materials deposited NiTi SMA Thin Film on PZT Substrate is prepared by using the magnetron sputtering method and crystallizing at 600°C. The microstructure of the materials is evaluated by scanning electron microscopy (SEM), X-ray diffraction (XRD) and energy dispersed spectroscopy (EDS). The response frequency characteristic under loop stress is studied by damping test. The results show that the NiTi SMA thin film has oriented columnar crystals and the PZT substrate has uniformly equiaxed grains. There isnt obvious component exchange between NiTi SMA thin film and the PZT substrate, especially, there is of the original composition in the region adjacent to the NiTi SMA thin film of the PZT substrate. The deposition of NiTi SMA thin film has no impact to response frequency range under loop stress of the PZT.

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