Damage Freeze-In Phenomena as a Function of Dopant Implant Type In Germanium-Rich Regions in Silicon

1990 ◽  
Vol 209 ◽  
Author(s):  
Sheldon Aronowitz ◽  
Courtney Hart ◽  
Sharon Myers
Keyword(s):  
Crystalline Silicon ◽  
Group V ◽  
Group Iii ◽  
Preferential Diffusion ◽  
Residual Damage ◽  
C 30 ◽  
P Type ◽  
20 Nm ◽  
Silicon Interface ◽  
Theoretical Considerations

ABSTRACTEnd-of-range damage produced by n-type dopants is frozen-in if that damage is produced in germanium-rich regions in crystalline silicon. This is not the case with p-type dopants. High germanium doses were implanted into silicon; the wafers were annealed at 1000 C for 30 minutes under nitrogen. Phosphorus or boron then were implanted into the crystalline siliconfollowed by a 900 C, 30 minute neutral ambient anneal.Explanation of the freeze-in phenomenon relies on results of semiempirical quantum chemical calculations that showed that group V dopants, whether interstitial or substitutional, as well as interstitial silicon, would be attracted to the vicinity of substitutional germanium sites in germaniumrich regions ofthe crystalline silicon. This general preferential diffusion behavior is not calculated to occur with the p-type dopants from group III. When substitutional, in fact, the group III impurities are predicted to be repelled from the germanium-rich regions.TEM studies show that any residual damage with boron as the implant and germanium present is low in density and within 20 nm of the silicon interface. This is contrary to studies involving phosphorus where damage is exclusively associated with the end-of-range of the phosphorus implant. Both sets of results are in accord with the theoretical considerations.

Properties Of Inp Simultaneously Doped With Zinc And Sulfur Grown By Mocvd

1996 ◽  
Vol 442 ◽  
Author(s):  
C. M. Alavanja ◽  
C. J. Pinzone ◽  
S. K. Sputz ◽  
M. Geva
Keyword(s):  
Energy Levels ◽  
Chemical Vapor ◽  
Hole Mobility ◽  
Group V ◽  
Zn Diffusion ◽  
Group Iii ◽  
Donor Acceptor ◽  
And Performance ◽  
P Type ◽  
Secondary Ion

AbstractAs the p-type dopant most often used in metalorganic chemical vapor deposition (MOCVD) of Group III - Group V compound semiconductors, Zn presents problems in device design and performance because of its high diffusivity in these materials. While Zn diffusion into n-type layers such as InP:S has been observed frequently, there is little known as to the electronic and optical properties of the resultant material. We have grown InP samples by MOCVD which are doped with both Zn and S to levels as high as 3×1018 cm−3. These samples were analyzed by electrochemical C-V profiling, van der Pauw-Hall analysis, secondary ion mass spectroscopy (SIMS), and low temperature (10K) photoluminescence spectroscopy (PL). We have determined that good hole mobility is maintained in InP:Zn samples that are simultaneously doped with S up to a level of 4×1017 cm−3. PL analysis of co-doped samples shows peaks between 0.91 and 0.92 μm which are indicative of donor-acceptor transitions, and broad peaks with energy levels of approximately 1.0 μm which may be indicative of ZnS complexes or precipitates. SIMS analysis of Zn diffusion into Fe doped substrates shows that Zn diffusion is reduced in the presence of S in the lattice.

scholarly journals Optoelectronic and Birefringence Properties of Weakly Mg Doped ZnO Thin lms Prepared By Spray Pyrolysis.

2021 ◽  
Author(s):  
Yassine Bouachibaa ◽  
ABDELOUADOUD MAMMERI ◽  
Abderrahmane Bouabellou ◽  
Rabia Oualid ◽  
Saber Saidi ◽  
...  
Keyword(s):  
Electrical Properties ◽  
Spray Pyrolysis ◽  
Chemical Vapor ◽  
Ultra Violet ◽  
Dip Coating ◽  
Group V ◽  
Group Iii ◽  
Type Semiconductor ◽  
Direct Band ◽  
P Type

Abstract Zinc Oxide (ZnO) is is a multipurpose semiconductor with many uses such as ultra-capacitor electrode [1], spintronic devices [2], multigas sensing [3–6], piezoelectric devices [7], ultra-violet LEDs [8], detectors [9] as well as waveguides [10–12]. In its thin film form, ZnO has a large adaptation to several deposition methods such as chemical vapor deposition [13], pulsed laser deposition [14], spray pyrolysis [15], dip-coating [16] and electrochemical deposition [17]. ZnO has very interesting characteristics for application in electronics and optoelectronics devices, especially its exciton binding energy of 60 meV at 300K, a wide direct band gap of 3.37 eV [18]. In addition to an ordinary and extraordinary refractive indexes of ne = 2.006 and no = 1.990 respectively [19]. To modify its electrical properties, ZnO was doped with Group III elements such as Al, Ga and In which acted as donor dopants to reinforce its n-type electrical nature and group V elements such as N, P, As and Sb which acted as acceptor dopants which changed ZnO to be a p-type semiconductor [20]. Controlling the refractive index of ZnO thin films was achieved by several ways including thermal annealing [21] and doping with In [22], Te, N [23] and Mg [24]. However, the e↵ect of dopants on the optical and electrical properties of ZnO is still not well understood.

The Quantitative Ultrastructure of the Heart Muscle of Japanese Quail by Hypergravitation, Hypodynamy and Combination

1990 ◽  
Vol 48 (3) ◽  
pp. 188-189
Author(s):  
Anton Bózner ◽  
Mikuláš Gažo ◽  
Jozef Dostál
Keyword(s):  
Japanese Quail ◽  
Heart Muscle ◽  
Relative Size ◽  
Combination Group ◽  
Control Group ◽  
Group V ◽  
Group Iii ◽  
Space Flights ◽  
Group I ◽  
Quantitative Ultrastructure

It is anticipated that Japanese quail /Coturnix coturnix japonica/ will provide animal proteins in long term space flights. Consequently this species of birds is of research interest of international space program INTERCOSMOS. In the year 1987 we reported on an experiment /2/ in which the effect of chronic acceleration of 2 G hypergravitation, the hypodynamy and the simultaneous effect of chronic acceleration and the location in the centre of the turntable of the centrifuge on the protein fractions in skeletal muscles was studied. The ultrastructure of the heart muscle was now in this experiments examined as well.Japanese quail cockerels, aged 48 days were exposed to 2 G hypergravitation /group IV/ in a 6,4 m diameter centrifuge, to hypodynamy /group III/ and their combination /group V/, respectively for 6 days / Fig.1/. The hypodynamy in group III was achieved by suspending the birds in jackets without contact the floor. The group II was located in the centre ofthe turntable of the centrifuge. The control group I. was kept under normal conditions. The quantitative ultrastructure of myocard was evaluated by the methods of Weibel/3/ - this enables to determine the number, relative size and volume of mitochondria volume of single mitochondria, defficiency of mitochondrial cristae and volume of myofibrils.

New insights on LeTID/BO-LID in p-type mono-crystalline silicon

2021 ◽  
Vol 226 ◽  
pp. 111085
Author(s):  
Dehang Lin ◽  
Zechen Hu ◽  
Qiyuan He ◽  
Deren Yang ◽  
Lihui Song ◽  
...  
Keyword(s):  
Crystalline Silicon ◽  
P Type

Characteristics of an oxidation-induced inversion layer in compensated p-type crystalline silicon

2010 ◽  
Vol 25 (5) ◽  
pp. 055009 ◽  
Author(s):  
F E Rougieux ◽  
D Macdonald ◽  
K R McIntosh ◽  
A Cuevas
Keyword(s):  
Crystalline Silicon ◽  
Inversion Layer ◽  
P Type

scholarly journals Effect of commercially available and experimental potassium oxalate-based dentin desensitizing agents in dentin permeability: influence of time and filtration system

2006 ◽  
Vol 17 (4) ◽  
pp. 300-305 ◽  
Author(s):  
Sérgio Lima Santiago ◽  
José Carlos Pereira ◽  
Ana Christina Bonato Figueiredo Martineli
Keyword(s):  
Hydraulic Conductance ◽  
Potassium Oxalate ◽  
Group V ◽  
Significance Level ◽  
Group Iii ◽  
Dentin Permeability ◽  
Group I ◽  
Filtration System ◽  
Desensitizing Agents

This study evaluated the influence of time after application of oxalate solutions in reducing dentin hydraulic conductance. Fifty dentin discs were obtained from extracted human third molars and assigned to 5 groups (n=10), according to the desensitizing agent used: Group I: OxaGel; Group II: experimental agent DD-1: Group III: experimental agent DD-2. In Groups IV and V, a placebo gel and deionized water were used as control, respectively. The agents were applied for 3 min, washed out and the hydraulic conductance was measured immediately and at 5-, 15- and 30-min intervals, and after acid etching. Data were analyzed statistically by two-way ANOVA and Duncan's test at 5% significance level. Groups I, II and III did not differ significantly from each other in any of the time intervals (p>0.05). Likewise, Groups IV and V were statistically similar to each other (p>0.05). The active agents reduced significantly dentin permeability in comparison to control groups (p<0.05). Dentin permeability measured in vitro decreased significantly with time regardless of the agent applied (either active or control agents). The results of Group V, in which no dentin desensitizing agent was employed, indicates that the assessment of dentin permeability by this method must be interpreted with caution.

A Study on the Effect of Samoa Extract (Cleome droserifolia) on Sperm Quality in Male Albino Rats Exposed to Pyrethroid

2021 ◽  
pp. 39-45
Author(s):  
Nura I. Al-Zail ◽  
Salah F. Kamies
Keyword(s):  
Sperm Quality ◽  
Group Iv ◽  
Male Rats ◽  
Control Group ◽  
Albino Rats ◽  
Protective Agent ◽  
Group V ◽  
Group Iii ◽  
Group I ◽  
Induced Changes

Pyrethroid cyhalothrin (PC) is an insecticide that is used worldwide for pest control in agriculture and household use. Samoa extract (SE) is a potent antioxidant protecting cells from oxidative stress. The present study investigates the protective and therapeutic effect of SE on PC-induced changes in sperm quality in male rats. Fifty adult male albino rats were divided into five groups: group I: served as control; group II: received PC i.p. only (6.2 mg/kg b.wt.); group III: received SE only (100 mg/kg b.wt., p.o.) for eight weeks; group IV: received SE as a protective agent daily for eight weeks, then followed by the administration of PC (i.p.) three times a week for two weeks; group V: exposed to PC (i.p.) three times a week for two weeks, then treated with the SE daily for 8 weeks. Results showed that PC caused markedly impaired sperm quality (a count, viability, motility, and abnormality). Compared to PC-treated animals, SE in the protective group markedly restored the alteration of sperm indices. However, SE in the curative group was found to be less effective in restoring PC-induced alterations. In conclusion, the data of this study revealed that the SE as a protective agent is more effective than as a therapeutic agent. Keywords: Samoa; Pyrethroid; Sperm quality; Rat

p-type nc-SiOx:H emitter layer for silicon heterojunction solar cells grown by rf-PECVD

2015 ◽  
Vol 1770 ◽  
pp. 7-12 ◽  
Author(s):  
Henriette A. Gatz ◽  
Yinghuan Kuang ◽  
Marcel A. Verheijen ◽  
Jatin K. Rath ◽  
Wilhelmus M.M. (Erwin) Kessels ◽  
...  
Keyword(s):  
Solar Cells ◽  
Amorphous Silicon ◽  
Material Properties ◽  
Crystalline Silicon ◽  
Silicon Layer ◽  
Nanocrystalline Silicon ◽  
Emitter Layer ◽  
Heterojunction Solar Cells ◽  
P Type ◽  
Silicon Heterojunction Solar Cells

ABSTRACTSilicon heterojunction solar cells (SHJ) with thin intrinsic layers are well known for their high efficiencies. A promising way to further enhance their excellent characteristics is to enable more light to enter the crystalline silicon (c-Si) absorber of the cell while maintaining a simple cell configuration. Our approach is to replace the amorphous silicon (a-Si:H) emitter layer with a more transparent nanocrystalline silicon oxide (nc-SiOx:H) layer. In this work, we focus on optimizing the p-type nc-SiOx:H material properties, grown by radio frequency plasma enhanced chemical vapor deposition (rf PECVD), on an amorphous silicon layer.20 nm thick nanocrystalline layers were successfully grown on a 5 nm a-Si:H layer. The effect of different ratios of trimethylboron to silane gas flow rates on the material properties were investigated, yielding an optimized material with a conductivity in the lateral direction of 7.9×10-4 S/cm combined with a band gap of E04 = 2.33 eV. Despite its larger thickness as compared to a conventional window a-Si:H p-layer, the novel layer stack of a-Si:H(i)/nc-SiOx:H(p) shows significantly enhanced transmission compared to the stack with a conventional a-Si:H(p) emitter. Altogether, the chosen material exhibits promising characteristics for implementation in SHJ solar cells.

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