Properties Of Inp Simultaneously Doped With Zinc And Sulfur Grown By Mocvd

1996 ◽  
Vol 442 ◽  
Author(s):  
C. M. Alavanja ◽  
C. J. Pinzone ◽  
S. K. Sputz ◽  
M. Geva
Keyword(s):  
Energy Levels ◽  
Chemical Vapor ◽  
Hole Mobility ◽  
Group V ◽  
Zn Diffusion ◽  
Group Iii ◽  
Donor Acceptor ◽  
And Performance ◽  
P Type ◽  
Secondary Ion

AbstractAs the p-type dopant most often used in metalorganic chemical vapor deposition (MOCVD) of Group III - Group V compound semiconductors, Zn presents problems in device design and performance because of its high diffusivity in these materials. While Zn diffusion into n-type layers such as InP:S has been observed frequently, there is little known as to the electronic and optical properties of the resultant material. We have grown InP samples by MOCVD which are doped with both Zn and S to levels as high as 3×1018 cm−3. These samples were analyzed by electrochemical C-V profiling, van der Pauw-Hall analysis, secondary ion mass spectroscopy (SIMS), and low temperature (10K) photoluminescence spectroscopy (PL). We have determined that good hole mobility is maintained in InP:Zn samples that are simultaneously doped with S up to a level of 4×1017 cm−3. PL analysis of co-doped samples shows peaks between 0.91 and 0.92 μm which are indicative of donor-acceptor transitions, and broad peaks with energy levels of approximately 1.0 μm which may be indicative of ZnS complexes or precipitates. SIMS analysis of Zn diffusion into Fe doped substrates shows that Zn diffusion is reduced in the presence of S in the lattice.

scholarly journals Effects of the Electron-Deficient Third Components in n-Type Terpolymers on Morphology and Performance of All-Polymer Solar Cells

2020 ◽  
Vol 02 (03) ◽  
pp. 214-222
Author(s):  
Bin Liu ◽  
Huiliang Sun ◽  
Chang Woo Koh ◽  
Mengyao Su ◽  
Bao Tu ◽  
...  
Keyword(s):  
Solar Cells ◽  
High Performance ◽  
Noncovalent Interactions ◽  
Polymer Solar Cells ◽  
Energy Levels ◽  
Building Blocks ◽  
The Third ◽  
Donor Acceptor ◽  
And Performance ◽  
P Type

Compared with p-type terpolymers, less effort has been devoted to n-type analogs. Herein, we synthesized a series of n-type terpolymers via incorporating three electron-deficient third components including thienopyrroledione (TPD), phthalimide, and benzothiadiazole into an imide-functionalized parent n-type copolymer to tune optoelectronic properties without sacrificing the n-type characteristics. Due to effects of the third components with different electron-accepting ability and solubility, the resulting three polymers feature distinct energy levels and crystallinity. In addition, heteroatoms (S, O, and N) attached on the third components trigger intramolecular noncovalent interactions, which can increase molecule planarity and have a significant effect on the packing structures of the polymer films. As a result, the best power conversion efficiency of 8.28% was achieved from all-polymer solar cells (all-PSCs) based on n-type terpolymer containing TPD. This is contributed by promoted electron mobility and face-on polymer packing, showing the pronounced advantages of the TPD used as a third component for thriving efficient n-type terpolymers. The generality is also successfully validated in a benchmark polymer donor/acceptor system by introducing TPD into the benchmark n-type polymer N2200. The results demonstrate the feasibility of introducing suitable electron-deficient building blocks as the third components for high-performance n-type terpolymers toward efficient all-PSCs.

scholarly journals Optoelectronic and Birefringence Properties of Weakly Mg Doped ZnO Thin lms Prepared By Spray Pyrolysis.

2021 ◽  
Author(s):  
Yassine Bouachibaa ◽  
ABDELOUADOUD MAMMERI ◽  
Abderrahmane Bouabellou ◽  
Rabia Oualid ◽  
Saber Saidi ◽  
...  
Keyword(s):  
Electrical Properties ◽  
Spray Pyrolysis ◽  
Chemical Vapor ◽  
Ultra Violet ◽  
Dip Coating ◽  
Group V ◽  
Group Iii ◽  
Type Semiconductor ◽  
Direct Band ◽  
P Type

Abstract Zinc Oxide (ZnO) is is a multipurpose semiconductor with many uses such as ultra-capacitor electrode [1], spintronic devices [2], multigas sensing [3–6], piezoelectric devices [7], ultra-violet LEDs [8], detectors [9] as well as waveguides [10–12]. In its thin film form, ZnO has a large adaptation to several deposition methods such as chemical vapor deposition [13], pulsed laser deposition [14], spray pyrolysis [15], dip-coating [16] and electrochemical deposition [17]. ZnO has very interesting characteristics for application in electronics and optoelectronics devices, especially its exciton binding energy of 60 meV at 300K, a wide direct band gap of 3.37 eV [18]. In addition to an ordinary and extraordinary refractive indexes of ne = 2.006 and no = 1.990 respectively [19]. To modify its electrical properties, ZnO was doped with Group III elements such as Al, Ga and In which acted as donor dopants to reinforce its n-type electrical nature and group V elements such as N, P, As and Sb which acted as acceptor dopants which changed ZnO to be a p-type semiconductor [20]. Controlling the refractive index of ZnO thin films was achieved by several ways including thermal annealing [21] and doping with In [22], Te, N [23] and Mg [24]. However, the e↵ect of dopants on the optical and electrical properties of ZnO is still not well understood.

scholarly journals Progress on the Synthesis and Application of CuSCN Inorganic Hole Transport Material in Perovskite Solar Cells

Materials ◽  
2018 ◽  
Vol 11 (12) ◽  
pp. 2592 ◽  
Author(s):  
Funeka Matebese ◽  
Raymond Taziwa ◽  
Dorcas Mutukwa
Keyword(s):  
Solar Cells ◽  
Energy Levels ◽  
Perovskite Solar Cells ◽  
Hole Mobility ◽  
Cost Effective ◽  
Vital Role ◽  
Hole Transport ◽  
Recombination Processes ◽  
Short Synthesis ◽  
P Type

P-type wide bandgap semiconductor materials such as CuI, NiO, Cu2O and CuSCN are currently undergoing intense research as viable alternative hole transport materials (HTMs) to the spiro-OMeTAD in perovskite solar cells (PSCs). Despite 23.3% efficiency of PSCs, there are still a number of issues in addition to the toxicology of Pb such as instability and high-cost of the current HTM that needs to be urgently addressed. To that end, copper thiocyanate (CuSCN) HTMs in addition to robustness have high stability, high hole mobility, and suitable energy levels as compared to spiro-OMeTAD HTM. CuSCN HTM layer use affordable materials, require short synthesis routes, require simple synthetic techniques such as spin-coating and doctor-blading, thus offer a viable way of developing cost-effective PSCs. HTMs play a vital role in PSCs as they can enhance the performance of a device by reducing charge recombination processes. In this review paper, we report on the current progress of CuSCN HTMs that have been reported to date in PSCs. CuSCN HTMs have shown enhanced stability when exposed to weather elements as the solar devices retained their initial efficiency by a greater percentage. The efficiency reported to date is greater than 20% and has a potential of increasing, as well as maintaining thermal stability.

MOCVD Growth of InAlAsSb Layer for High-Breakdown Voltage HEMT Applications

2003 ◽  
Vol 799 ◽  
Author(s):  
Haruki Yokoyama ◽  
Hiroki Sugiyama ◽  
Yasuhiro Oda ◽  
Michio Sato ◽  
Noriyuki Watanabe ◽  
...  
Keyword(s):  
Schottky Barrier ◽  
Chemical Vapor ◽  
Composition Analysis ◽  
Group V ◽  
Group Iii ◽  
Mocvd Growth ◽  
Order Of Magnitude ◽  
Etch Stop ◽  
Etch Stop Layer ◽  
Inp Substrates

ABSTRACTThis paper studies the decomposition characteristic of group-III sources during InAlAsSb growth on InP substrates by metalorganic chemical vapor deposition (MOCVD) using trimethylindium (TMI), trimethylaluminum (TMA), trimethylantimony (TMSb) and arsine (AsH3). A composition analysis of InAlAsSb layers shows that the group-III compositions in the InAlAsSb layer change remarkably when the flow rate of the group-V source is varied. To clarify the reason for this phenomenon, the growth rates of InAsSb and AlAsSb component are examined. Their changes indicate that TMSb suppresses the decomposition of TMA while AsH3 enhances it. Moreover, the HEMT structure with InP/InAlAsSb Schottky barrier layer, whose InP layer acts as a recess-etch-stop layer, is fabricated for the first time. The I-V characteristics of a fabricated Schottky barrier diode indicate that the reverse leakage current of InP/InAlAsSb is about one order of magnitude smaller than that of commonly used InP/InAlAs.

scholarly journals Regulation of Hole Concentration and Mobility and First-Principle Analysis of Mg-Doping in InGaN Grown by MOCVD

Materials ◽  
2021 ◽  
Vol 14 (18) ◽  
pp. 5339
Author(s):  
Lian Zhang ◽  
Rong Wang ◽  
Zhe Liu ◽  
Zhe Cheng ◽  
Xiaodong Tong ◽  
...  
Keyword(s):  
First Principles ◽  
Metalorganic Chemical Vapor Deposition ◽  
Hole Concentration ◽  
Chemical Vapor ◽  
Hole Mobility ◽  
Nitrogen Vacancy ◽  
First Principle ◽  
Mg Doping ◽  
Limiting Condition ◽  
P Type

This work studied the regulation of hole concentration and mobility in p-InGaN layers grown by metalorganic chemical vapor deposition (MOCVD) under an N-rich environment. By adjusting the growth temperature, the hole concentration can be controlled between 6 × 1017/cm3 and 3 × 1019/cm3 with adjustable hole mobility from 3 to 16 cm2/V.s. These p-InGaN layers can meet different requirements of devices for hole concentration and mobility. First-principles defect calculations indicate that the p-type doping of InGaN at the N-rich limiting condition mainly originated from Mg substituting In (MgIn). In contrast with the compensation of nitrogen vacancy in p-type InGaN grown in a Ga-rich environment, the holes in p-type InGaN grown in an N-rich environment were mainly compensated by interstitial Mg (Mgi), which has very low formation energy.

scholarly journals A-π-D-π-A-Based Small Molecules for OTFTs Containing Diketopyrrolopyrrole as Acceptor Units

Micromachines ◽  
2021 ◽  
Vol 12 (7) ◽  
pp. 817
Author(s):  
Baji Shaik ◽  
Mujeeb Khan ◽  
Mohammed Rafi Shaik ◽  
Mohammed A.F. Sharaf ◽  
Doumbia Sekou ◽  
...  
Keyword(s):  
Thin Film ◽  
Thermal Properties ◽  
Small Molecules ◽  
Thin Film Transistor ◽  
Hole Mobility ◽  
Organic Thin Film ◽  
Organic Thin Film Transistor ◽  
Cast Films ◽  
Donor Acceptor ◽  
P Type

A-π-D-π-A-based small molecules 6,6′-((thiophene-2,5-diylbis(ethyne-2,1-diyl))bis(thiophene-5,2-diyl))bis(2,5-bis(2-ethylhexyl)-3-(thiophen-2-yl)-2,5-dihydropyrrolo[3,4-c]pyrrole-1,4-dione) (TDPP-T) and 6,6′-(((2,3-dihydrothieno[3,4-b][1,4]dioxine-5,7-diyl)bis(ethyne-2,1-diyl))bis(thiophene-5,2-diyl))bis(2,5-bis(2-ethylhexyl)-3-(thiophen-2-yl)-2,5-dihydropyrrolo[3,4-c]pyrrole-1,4-dione) (TDPP-EDOT) have been designed and synthesized. The diketopyrrolopyrrole acts as an electron acceptor, while the thiophene or 3,4-ethylenedioxythiophene acts as an electron donor. The donor–acceptor groups are connected by an ethynyl bridge to further enhance the conjugation. The optoelectronics, electrochemical, and thermal properties have been investigated. Organic thin film transistor (OTFT) devices prepared from TDPP-T and TDPP-EDOT have shown p-type mobility. In as cast films, TDPP-T and TDPP-EDOT have shown a hole mobility of 5.44 × 10−6 cm2 V−1 s−1 and 4.13 × 10−6 cm2 V−1 s−1, respectively. The increase in the mobility of TDPP-T and TDPP-EDOT OTFT devices was observed after annealing at 150 °C, after which the mobilities were 3.11 × 10−4 cm2 V−1 s−1 and 2.63 × 10−4 cm2 V−1 s−1, respectively.

Deposition Sequences for Atomic Layer Growth of AlN Thin Films on Si(100) Using Dimethylethylamine Alane and Ammonia

1997 ◽  
Vol 482 ◽  
Author(s):  
Jason S. Kuo ◽  
J. W. Rogers
Keyword(s):  
Mass Spectrometry ◽  
Thin Films ◽  
Secondary Ion Mass Spectrometry ◽  
Atomic Layer ◽  
Layer Growth ◽  
Group V ◽  
Group Iii ◽  
Dimethylethylamine Alane ◽  
Temperature Programmed ◽  
Secondary Ion

AbstractRecent studies have demonstrated that dimethylethylamine alane (DMEAA) is a viable group III precursor for depositing high quality aluminum nitride thin films during atomic layer growth with ammonia as the group V source. However, a practical consideration that is questioned but seldom investigated is whether one should initiate the growth with the group III or the group V source. Clearly DMEAA interacts differently with silicon than does ammonia; hence, reversing the deposition sequence will lead to different interfacial composition. Earlier studies involving TMAA and ammonia indicate that direct interaction of group III precursor with the surface may lead to higher carbon contamination. In this work, adsorption of DMEAA on Si(100) and on ammonia-covered Si(100) are characterized with Temperature-Programmed Desorption (TPD), Secondary-Ion Mass Spectrometry (SIMS), and Temperature-Programmed Secondary-Ion Mass Spectrometry (TPSIMS). Preliminary results indicate that DMEAA adsorbs molecularly on both Si(100) and ammonia-covered Si(100), but to a much smaller coverage on the latter surface. Results from reversing the adsorption sequence, i.e. ammonia first then DMEAA, will be compared as a possibility for interfacial quality control.

InAs Quantum Dots for Optoelectronic Device Applications

2004 ◽  
Vol 829 ◽  
Author(s):  
K. Stewart ◽  
S. Barik ◽  
M. Buda ◽  
H. H. Tan ◽  
C. Jagadish
Keyword(s):  
Quantum Dots ◽  
Growth Parameters ◽  
Chemical Vapor ◽  
Optoelectronic Device ◽  
Organic Chemical ◽  
Group V ◽  
Inas Quantum Dots ◽  
Group Iii ◽  
Device Applications ◽  
Metal Organic

ABSTRACTIn this paper we discuss the growth of self-assembled InAs quantum dots (QDs) on both GaAs and InP substrates by low pressure Metal Organic Chemical Vapor Deposition. The influence of various growth parameters, such as the deposition time, the QD overlayer growth temperature, the V/III ratio and the group III and/or group V interdiffusion on QD formation are discussed and compared for the two systems. Stacking issues and preliminary results for an InAs/GaAs QD laser are also presented.

Damage Freeze-In Phenomena as a Function of Dopant Implant Type In Germanium-Rich Regions in Silicon

1990 ◽  
Vol 209 ◽  
Author(s):  
Sheldon Aronowitz ◽  
Courtney Hart ◽  
Sharon Myers
Keyword(s):  
Crystalline Silicon ◽  
Group V ◽  
Group Iii ◽  
Preferential Diffusion ◽  
Residual Damage ◽  
C 30 ◽  
P Type ◽  
20 Nm ◽  
Silicon Interface ◽  
Theoretical Considerations

ABSTRACTEnd-of-range damage produced by n-type dopants is frozen-in if that damage is produced in germanium-rich regions in crystalline silicon. This is not the case with p-type dopants. High germanium doses were implanted into silicon; the wafers were annealed at 1000 C for 30 minutes under nitrogen. Phosphorus or boron then were implanted into the crystalline siliconfollowed by a 900 C, 30 minute neutral ambient anneal.Explanation of the freeze-in phenomenon relies on results of semiempirical quantum chemical calculations that showed that group V dopants, whether interstitial or substitutional, as well as interstitial silicon, would be attracted to the vicinity of substitutional germanium sites in germaniumrich regions ofthe crystalline silicon. This general preferential diffusion behavior is not calculated to occur with the p-type dopants from group III. When substitutional, in fact, the group III impurities are predicted to be repelled from the germanium-rich regions.TEM studies show that any residual damage with boron as the implant and germanium present is low in density and within 20 nm of the silicon interface. This is contrary to studies involving phosphorus where damage is exclusively associated with the end-of-range of the phosphorus implant. Both sets of results are in accord with the theoretical considerations.

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