Evaluation of Applied Materials' Rapid Thermal Processor using Sematech Methodologies for 0.25 m Technology Thermal Applications-Part II

AbstractUnder a joint development contract with Applied Materials (AMAT) and Texas Instruments (TI), SEMATECH undertook a project (Joint Development Project J100) with a goal of delivering a cost effective, technically advanced Rapid Thermal Processor (RTP). The RTP tool was specified to meet the present and future manufacturing needs of SEMATECH's member companies. The J100 results contained here will focus on the temperature and control performance of the AMAT RTP tool. The J100 results on the temperature measurement and control performance of AMAT's RTP tool using bare backside monitor wafers were presented in part I. In actual manufacturing environments the backside conditions of wafers are not consistent which causes temperature variations during rapid thermal processing. In this experiment, boron monitor wafers with varying backside conditions were used to test the uniformity, repeatability, and stability of the tool. The wafer backside films were fabricated using predictions from emissivity models and were subsequently verified by experimental techniques. In addition, perturbation experiments utilizing boron and arsenic implanted wafers demonstrated a high degree of localized temperature control across the wafers. A 3-sigma temperature variation ranging from 3.0 °C (for wafers with similar backside films) to 6.0 °C (for wafers with varying backside films) was found for all wafers processed during this evaluation. The perturbation experiments, which included a forced temperature offset of two degrees at one of the wafer temperature sensors, resulted in a noticeable change in sheet resistance across the wafer.

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Applications of In Situ Ellipsometry in RTP Temperature Measurement and Process Control

MRS Proceedings ◽

10.1557/proc-224-17 ◽

1991 ◽

Vol 224 ◽

Cited By ~ 2

Author(s):

Hisham Z. Massoud ◽

Ronald K. Sampson ◽

Kevin A. Conrad ◽

Yao-Zhi Hu ◽

Eugene A. Irene

Keyword(s):

Temperature Dependence ◽

Thermal Processing ◽

Rapid Thermal Processing ◽

Index Of Refraction ◽

Strong Temperature Dependence ◽

Heating And Cooling ◽

Wafer Processing ◽

And Control ◽

Measurement And Control

AbstractThe applications of in situ automated ellipsometry in the measurement and control of temperature in rapid-thermal processing (RTP) equipment are investigated. This technique relies on the accurate measurement of the index of refraction of a wafer using ellipsometry and the strong temperature dependence of the index of refraction to determine the wafer temperature. In principle, this technique is not limited to silicon wafer processing and could be applied to any surface whose index of refraction has a strong and well known temperature dependence. This technique is non-invasive, non-contact, fast, accurate, compatible with ultraclean processing, and lends itself to monitoring the dynamic heating and cooling cycles encountered in rapid-thermal processing.

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The concept of the safety of measurement and control systems with a PLC

AUTOBUSY – Technika Eksploatacja Systemy Transportowe ◽

10.24136/atest.2018.387 ◽

2018 ◽

Vol 19 (12) ◽

pp. 225-228

Author(s):

Mariusz Siczek ◽

Roman Pniewski

Keyword(s):

Control Systems ◽

And Control ◽

High Degree ◽

Measurement And Control ◽

Executive Elements

The article presents the concept of safety of measurement and control systems with the use of a PLC controller. The solution presented in simple control systems was presented, where the use of expensive executive elements with a high degree of security is pointless. The proprietary solutions described are used for electrical, hydraulic and pneumatic systems.

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The Design of Greenhouse Temperature Control System

Applied Mechanics and Materials ◽

10.4028/www.scientific.net/amm.599-601.1111 ◽

2014 ◽

Vol 599-601 ◽

pp. 1111-1114 ◽

Cited By ~ 1

Author(s):

Xiao Yan Wang ◽

Zhi Wen Zhou ◽

Tao Wu

Keyword(s):

Control System ◽

Temperature Sensor ◽

Control Algorithm ◽

Cost Effective ◽

Temperature Control System ◽

Temperature Detection ◽

Long Life ◽

And Control ◽

Fuzzy Control Algorithm ◽

High Degree

A vegetable greenhouse temperature detection and control system is described in this paper. The system is based STC89C52 microcontroller, using DS18B20 temperature sensor to detect real-time temperature, and using fuzzy control algorithm to control greenhouse temperature. Experimental results show that the system is cost-effective, long life and high degree of intelligence, has some practical value.

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Temperature Measurement and Control in a Rapid Thermal Processor

MRS Proceedings ◽

10.1557/proc-52-191 ◽

1985 ◽

Vol 52 ◽

Cited By ~ 11

Author(s):

Ronald E. Sheets

Keyword(s):

Thermal Processing ◽

Background Radiation ◽

Optical Pyrometer ◽

Wafer Temperature ◽

Loop Control ◽

Closed Loop Control System ◽

Loop Control System ◽

And Control ◽

Measurement And Control ◽

Temperature Surface

ABSTRACTRapid Thermal Processing (RTP) of silicon or other semiconductor materials requires accurate measurement and control of temperature. In a typical RTP cycle, heating of the wafer takes place in seconds, making accurate control of the wafer temperature very critical. Non contact wafer temperature sensing is achieved using an optical pyrometer. Precise temperature control from 400° C to 1350° C is maintained with a closed loop control system consisting of an optical pyrometer and a computer. Sources of errors due to variations in emissivity as a function of wafer temperature, surface conditions and background radiation are discussed. Calibration of the system is achieved by using a thermocouple instrumented wafer.

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Evaluation of Applied Materials' Rapid Thermal Processor Using SEMATECH Methodologies for 0.25 m Technology Thermal Applications-Part I

MRS Proceedings ◽

10.1557/proc-429-15 ◽

1996 ◽

Vol 429 ◽

Cited By ~ 2

Author(s):

Terrence J. Riley ◽

Arun K. Nanda ◽

Gary Miner ◽

Michael F. Pas ◽

Sylvia Hossain-Pas ◽

...

Keyword(s):

Sheet Resistance ◽

Cost Effective ◽

Development Project ◽

Evaluation Methodology ◽

Effect Of Temperature ◽

Process Window ◽

Joint Development ◽

Screening Experiments ◽

Small Increments ◽

The Impact

AbstractUnder a joint development contract with Applied Materials (AMAT) and Texas Instruments (TI), SEMATECH undertook a project (Joint Development Project J100) with a goal of delivering a cost effective, technically advanced Rapid Thermal Processor (RTP). The RTP tool was specified to meet the present and future manufacturing needs of SEMATECH's member companies. The J100 results contained here will focus on the temperature and control performance of the AMAT RTP tool. The evaluation methodology included passive data collection (PDC) to check the tool stability, screening experiments to isolate the variable interaction and to define the process window, broad range and narrow range sensitivity studies to determine the sheet resistance dependence on thermal budget for small increments in temperature set point, perturbation experiments to determine localized control, and stability experiments to check for drift and process repeatability. The impact of wafer emissivity on source/drain rapidthermal annealing was evaluated by processing wafers with varying backside films. The PDC experiments demonstrated the tool to be stable. Screening experiments revealed the strong effect of temperature, followed by time, and time-temperature interaction on sheet resistance. Boron implanted (p+/n) wafers were found to be sensitive at a temperature of 1025 °C or less for a 10 second anneal whereas arsenic implanted wafers (n+/p) showed greater sensitivity at temperatures ranging from 1025 °C to 1100 °C for a 10 second anneal.

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Rapid Thermal Processing: How Well is it Doing and Where is it Going?

MRS Proceedings ◽

10.1557/proc-92-3 ◽

1987 ◽

Vol 92 ◽

Cited By ~ 11

Author(s):

T.O. Sedgwick

Keyword(s):

Thermal Processing ◽

Film Growth ◽

Rapid Thermal Processing ◽

Semiconductor Technology ◽

Productivity Cost ◽

Wafer Processing ◽

And Control ◽

Measurement And Control ◽

Reactive Mode ◽

Made In

ABSTRACTThe use of Rapid Thermal Processing (RTP) as a processing tool in semiconductor technology is still increasing and and becoming more diverse. The use of RTP in a reactive mode for film growth and deposition is an important new direction. The strong interest in III-V compound annealing studies represents one of the most important application areas. Although RTP is predominantly exploratory and developmental in nature it is slowly being introduced into the manufacture of Si devices. The technological necessity for the greater use of RTP in routine production will depend on either demonstrated productivity/cost advantages or on some intrinsic advantage of RTP. The intrinsic advantages of RTP are due to the single wafer processing nature of the operation or due to the possibility of selectively enhancing one desired process over another undesired reaction in a partically fabricated structure. Although significant impovements in commercially available reactors have been made in the last several years, better temperature measurement and control and particularly temperature uniformity of the wafer are still sorely needed.

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