scholarly journals In-situ Measurement and Control of Electric Discharge on Submerged Arc Synthesis Process for Continuous TiO2 Nanoparticle Fabrication

2004 ◽  
Vol 45 (10) ◽  
pp. 3071-3078 ◽  
Author(s):  
Liang-Chia Chen ◽  
Sheng-Hsin Pai
2018 ◽  
Vol 9 (24) ◽  
pp. 7165-7172 ◽  
Author(s):  
Sebastian Volk ◽  
Nuri Yazdani ◽  
Olesya Yarema ◽  
Maksym Yarema ◽  
Deniz Bozyigit ◽  
...  

1991 ◽  
Vol 224 ◽  
Author(s):  
Hisham Z. Massoud ◽  
Ronald K. Sampson ◽  
Kevin A. Conrad ◽  
Yao-Zhi Hu ◽  
Eugene A. Irene

AbstractThe applications of in situ automated ellipsometry in the measurement and control of temperature in rapid-thermal processing (RTP) equipment are investigated. This technique relies on the accurate measurement of the index of refraction of a wafer using ellipsometry and the strong temperature dependence of the index of refraction to determine the wafer temperature. In principle, this technique is not limited to silicon wafer processing and could be applied to any surface whose index of refraction has a strong and well known temperature dependence. This technique is non-invasive, non-contact, fast, accurate, compatible with ultraclean processing, and lends itself to monitoring the dynamic heating and cooling cycles encountered in rapid-thermal processing.


2008 ◽  
Vol 8 (2) ◽  
pp. 503-509 ◽  
Author(s):  
Liang-Chia Chen ◽  
Bao-Hong Ji

This article presents the development of an on-line measurement and control system for process characterization and optimization of the nanoparticle manufacturing process, called the submerged arc-spray nanoparticle synthesis system (SANSS). To achieve optimized control of particle uniformity, this research investigates the feasibility of employing optical fiber probe and the dynamic light scattering (DLS) technique to monitor and control particle sizes. According to the theory of DLS, an on-line nanoparticle sampling and measurement system was developed and integrated with the SANSS as an important step to verify the measurement performance of the proposed method. To examine the measurement accuracy of the developed system, calibrated polystyrene latex particles with known accurate sizes were employed to verify the particle sizing accuracy of the proposed system. The data conformity between the measurement results of TiO2 nanoparticles obtained by various methods, including TEM, a calibrated commercial particle sizing system and the on-line measurement system, has indicated that the developed method was feasible and effective.


1987 ◽  
Vol 107 ◽  
Author(s):  
S. Ramesh

AbstractWe have studied the recrystallization of silicon films using a focused dual-lamp apparatus. By careful measurement and control of the power density profile (and focal-plane location) of the line-image and of the uniformity of the substrate temperature we have achieved recrystallization of SOI films on 4“silicon wafers. By taking advantage of the measured difference in power-density-profiles of an arc lamp and a tungsten lamp in the dual-lamp apparatus we have achieved low temperature-gradient, reduced-stress recrystallization yielding SOI films in which the usual branched pattern of subgrain-boundaries are replaced by individual dislocations. In situ study of the melt- and growth-fronts, was done using a viewing system with a resolution of - 10 ¼m. We have also done studies of stress-relief schemes.


1993 ◽  
Author(s):  
Steven A. Henck ◽  
Walter M. Duncan ◽  
Lee M. Loewenstein ◽  
John Kuehne

1997 ◽  
Vol 470 ◽  
Author(s):  
Maurizio Fulco ◽  
Onofrio L. Russo ◽  
Sergey Belikov ◽  
Walter Kosonocky

ABSTRACTWe demonstrate an interactive software system in which the emissivity of wafers can be estimated in situ using different models. The system allows the data taker to introduce a choice of design parameters necessary for the control of temperature uniformity. The objective of the interactive system is to obtain a better estimation of the wavelength dependent emissivity by using existing data such as integrated emissivity, for example, as input information. Results for some of the models are presented and compared to show differences in the models chosen. The principle advantage offered by the system are the likely prospects of a realistic improvement and confident assessment for real time temperature measurement and control in an RTP environment.


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