The Effects of Stress on the Interdiffusion in Si1-xGex/Si Superlattices

1991 ◽  
Vol 226 ◽  
Author(s):  
S.M. Prokes
Keyword(s):  
Activation Energy ◽  
Tensile Stress ◽  
Defect Formation ◽  
External Stress ◽  
X Ray Diffraction ◽  
Strained Si ◽  
X Ray ◽  
Barrier Layers ◽  
Long Period ◽  
Kinetics Of

AbstractThe effects of grown-in stress and applied external stress on the interdiffusion behavior in long-period Si0.7Ge0.3/Si is examined using x-ray diffraction and Raman Spectroscopy. Both symmetrically and asymmetrically–strained superlattices have been examined, and an activation energy for interdiffusion of 3.9 eV and 4.6eV have been obtained, respectively. In addition, an enhanced interdiffusion has also been measured when the asymmetrically–strained superlattice was subjected to an external tensile stress during annealing. In both cases, enhanced interdiffusion has been measured whenever the Si barrier layers experience tensile stress during annealing. The Raman results indicate that enhanced Ge diffusion into the Si barriers occur when these barriers are put under tensile stress. This result will be discussed in terms of the kinetics of defect formation and motion in the strained Si barriers.

Stress and its Effect on Intermixing in Si1-xGex/Si Superlattices

1994 ◽  
Vol 356 ◽  
Author(s):  
S. M. Prokes
Keyword(s):  
Raman Spectroscopy ◽  
Tensile Stress ◽  
Defect Formation ◽  
Growth Conditions ◽  
External Stress ◽  
X Ray Diffraction ◽  
Strained Si ◽  
X Ray ◽  
Long Period ◽  
Kinetics Of

AbstractInterdiffusion behavior in long-period Si1-xGex/Si as a function of growth conditions and external stress is examined using x-ray diffraction and Raman Spectroscopy. Both symmetrically and asymmetrically-strained superlattices have been examined, and an activation energy for interdiffusion of 3.9 eV and 4.6 eV have been obtained, respectively. In addition, an enhanced interdiffusion has also been measured in an externally stressed asymmetric superlattice. In both cases, enhanced interdiffusion has been measured whenever the Si barrier layers experience tensile stress during annealing. The Raman spectroscopy supports this result, showing an enhanced Ge diffusion into the Si barriers when these barriers are put under tensile stress. This result will be discussed in terms of the kinetics of defect formation and motion in the strained Si barriers.

scholarly journals Kinetics of carbothermic reduction of synthetic chromite

2014 ◽  
Vol 50 (1) ◽  
pp. 15-21 ◽  
Author(s):  
Y. Wang ◽  
L. Wang ◽  
J. Yu ◽  
K.C. Chou
Keyword(s):  
Activation Energy ◽  
Apparent Activation Energy ◽  
Reduction Process ◽  
X Ray Diffraction ◽  
X Ray ◽  
Chromite Ore ◽  
Current Reduction ◽  
Increasing Temperature ◽  
Isothermal Mode ◽  
Kinetics Of

In order to optimize the current reduction process of chromite, a good knowledge of reduction mechanism involved is required. The basic component in chromite ore is FeCr2O4, thus, kinetic investigation of synthetic FeCr2O4 with different amount of carbon were carried out in the temperature range of 1473K to 1673K under both isothermal and non-isothermal mode. The iron can be easily reduced compared with chromium. And higher reduction degree of chromite can be achieved by increasing temperature and carbon content. With the supporting of X-ray Diffraction and Scanning Electron Microscope methods, the formation of metallic products followed the sequence: Fe-C alloy, (Fe,Cr)7C3and Fe-Cr-C alloy. Kinetics analysis showed that the first stage was controlled by nucleation with an apparent activation energy of 120kJ/mol, while the chromium reduction was controlled by crystallochemical transformation with an apparent activation energy of 288kJ/mol.

Enhancement of Aurivillius Phase Formation Kinetics in SBT Thin Films using Nanoparticle Seeding

2003 ◽  
Vol 784 ◽  
Author(s):  
Yun-Mo Sung ◽  
Woo-Chul Kwak ◽  
Se-Yon Jung ◽  
Seung-Joon Hwang
Keyword(s):  
Thin Films ◽  
Activation Energy ◽  
Phase Transformation ◽  
Phase Formation ◽  
X Ray Diffraction ◽  
Aurivillius Phase ◽  
X Ray ◽  
Si Substrates ◽  
Formation Kinetics ◽  
Kinetics Of

ABSTRACTPt/Ti/SiO2/Si substrates seeded by SBT nanoparticles (∼60–80 nm) were used to enhance the phase formation kinetics of Sr0.7Bi2.4Ta2O9 (SBT) thin films. The volume fractions of Aurivillius phase formation obtained through quantitative x-ray diffraction (Q-XRD) analyses showed highly enhanced kinetics in seeded SBT thin films. The Avrami exponents were determined as ∼1.4 and ∼0.9 for unseeded and seeded SBT films, respectively, which reveals different nucleation modes. By using Arrhenius–type plots the activation energy values for the phase transformation of unseeded and seeded SBT thin films were determined to be ∼264 and ∼168 kJ/mol, respectively. This gives a key reason to the enhanced kinetics in seeded films. Microstructural analyses on unseeded SBT thin films showed formation of randomly oriented needle-like crystals, while those on seeded ones showed formation of domains comprised of directionally grown worm-like crystals.

scholarly journals Crystallization kinetics of K2O·TiO2·3GeO2 glass studied by DTA

2008 ◽  
Vol 40 (3) ◽  
pp. 333-338 ◽  
Author(s):  
S. Grujic ◽  
N. Blagojevic ◽  
M. Tosic ◽  
V. Zivanovic ◽  
J. Nikolic
Keyword(s):  
Activation Energy ◽  
Thermal Analysis ◽  
Particle Size ◽  
Differential Thermal Analysis ◽  
Crystallization Kinetics ◽  
Crystallization Process ◽  
X Ray Diffraction ◽  
X Ray ◽  
Powder Samples ◽  
Kinetics Of

Crystallization kinetics of K2O?TiO2?3GeO2 glass was investigated by differential thermal analysis (DTA). Experiments were performed on powder samples with a particle size < 0.037 mm. The glass samples were heated at different rates in the temperature range 20-750?C. The kinetic parameters, activation energy for the crystallization process, Ec and Avrami exponent, n were calculated. Powder X-ray diffraction analysis (XRD) of crystallized glass reveals the presence of crystalline K2O?TiO2?3GeO2 indicating polymorphic crystallization with interface controlled crystal growth.

Kinetic mechanisms for mullite formation from sol-gel precursors

1990 ◽  
Vol 5 (9) ◽  
pp. 1963-1969 ◽  
Author(s):  
Dong X. Li ◽  
William J. Thomson
Keyword(s):  
Activation Energy ◽  
Reaction Kinetics ◽  
Single Phase ◽  
Sol Gel ◽  
Mullite Formation ◽  
X Ray Diffraction ◽  
X Ray ◽  
Diffusion Controlled ◽  
Kinetic Mechanisms ◽  
Kinetics Of

The reaction kinetics for the formation of mullite (3Al2O3 · 2SiO2) from sol-gel derived precursors were studied using dynamic x-ray diffraction (DXRD) and differential thermal analysis (DTA). The reaction kinetics of diphasic and single phase gels are compared and different reaction mechanisms are found for each gel. Mullite formation in the diphasic gel exhibits an Avrami type, diffusion-controlled growth mechanism with initial mullite formation temperatures of about 1250 °C and an activation energy on the order 103 kJ/mole. On the other hand, mullite formation from the single phase gel is a nucleation-controlled process with an initial formation temperature of 940 °C and a much lower activation energy of about 300 kJ/mole.

Crystallization Kinetics of Sol-gel-derived (1x)SrBi2Ta2O9–xBi3TiTaO9 Ferroelectric Thin Films

2002 ◽  
Vol 17 (6) ◽  
pp. 1463-1468 ◽  
Author(s):  
Woo-Chul Kwak ◽  
Yun-Mo Sung
Keyword(s):  
Thin Films ◽  
Activation Energy ◽  
Crystallization Kinetics ◽  
Sol Gel ◽  
Avrami Exponent ◽  
X Ray Diffraction ◽  
X Ray ◽  
Isothermal Kinetic Analysis ◽  
Isothermal Kinetic ◽  
Kinetics Of

The crystallization kinetics of Sr0.7Bi2.3Ta2O9 (SBT) and 0.7SrBi2Ta2O9–0.3Bi3TiTaO9 (SBT-BTT) thin films formed by the sol-gel and spin coating techniques were studied. Phase formation and crystal growth are greatly affected by the film composition and crystallization temperature. Isothermal kinetic analysis was performed on the x-ray diffraction results of the thin films heated in the range of 730 to 760 °C at 10 °C intervals. Activation energy and Avrami exponent values were determined for the fluorite-to-Aurivillus phase transformation. A reduction of approximately 51 kJ/mol in activation energy was observed for the SBT-BTT thin films, and an Avrami exponent value of approximately 1.0 was obtained for both the SBT and SBT-BTT. A comparison is made, and the possible crystallization mechanism is discussed.

Crystallization Kinetics of MgO–Al2O3–SiO2 Transparent Glass–Ceramics

2012 ◽  
Vol 509 ◽  
pp. 230-234 ◽  
Author(s):  
Jin Shu Cheng ◽  
Jing Wang ◽  
Li Ying Tang ◽  
Zhen Lu Deng
Keyword(s):  
Activation Energy ◽  
Crystallization Kinetics ◽  
Glass Ceramics ◽  
Crystal Phase ◽  
Spinel Crystal ◽  
X Ray Diffraction ◽  
Isothermal Crystallization Kinetics ◽  
X Ray ◽  
Spinel Mgal2o4 ◽  
Kinetics Of

The non-isothermal crystallization kinetics of the MgO–Al2O3–SiO2 (MAS) glasses were analyzed with the Kissinger equation and the Augis-Bennett equation by differential scanning calorimeter (DSC) and X-ray diffraction (XRD). The results showed that two crystal phases of spinel (MgAl2O4) and SiO2 were generated sequentially in the heat treatment process. When the spinel was the only crystal phase, the MAS glass-ceramic was transparent. For glass A (containing one type alkali metal Na2O), the corresponding activation energy was Ep1(A)=325.27kJ/mol, Ep2(A)=364.99kJ/mol; for glass B (containing Na2O and K2O) , the activation energy is Ep1(B)=233.79kJ/mol, Ep2(B)=273.85kJ /mol. The average crystallization index for spinel crystal phase was nA1=1.99, nB1=2.58, By adding K+, which suggested that the spinel crystal phase precipitation have the trend to change from two-dimensional pattern to bulk crystallization.

scholarly journals Stable and Metastable Phase Equilibria Involving the Cu6Sn5 Intermetallic

2021 ◽  
Author(s):  
A. Leineweber ◽  
M. Löffler ◽  
S. Martin
Keyword(s):  
Phase Equilibria ◽  
Electron Backscatter Diffraction ◽  
Metastable Phase ◽  
Stable Phase ◽  
X Ray Diffraction ◽  
X Ray ◽  
Heat Treated ◽  
Ordered Phases ◽  
Backscatter Diffraction ◽  
Kinetics Of

Abstract Cu6Sn5 intermetallic occurs in the form of differently ordered phases η, η′ and η′′. In solder joints, this intermetallic can undergo changes in composition and the state of order without or while interacting with excess Cu and excess Sn in the system, potentially giving rise to detrimental changes in the mechanical properties of the solder. In order to study such processes in fundamental detail and to get more detailed information about the metastable and stable phase equilibria, model alloys consisting of Cu3Sn + Cu6Sn5 as well as Cu6Sn5 + Sn-rich melt were heat treated. Powder x-ray diffraction and scanning electron microscopy supplemented by electron backscatter diffraction were used to investigate the structural and microstructural changes. It was shown that Sn-poor η can increase its Sn content by Cu3Sn precipitation at grain boundaries or by uptake of Sn from the Sn-rich melt. From the kinetics of the former process at 513 K and the grain size of the η phase, we obtained an interdiffusion coefficient in η of (3 ± 1) × 10−16 m2 s−1. Comparison of this value with literature data implies that this value reflects pure volume (inter)diffusion, while Cu6Sn5 growth at low temperature is typically strongly influenced by grain-boundary diffusion. These investigations also confirm that η′′ forming below a composition-dependent transus temperature gradually enriches in Sn content, confirming that Sn-poor η′′ is metastable against decomposition into Cu3Sn and more Sn-rich η or (at lower temperatures) η′. Graphic Abstract

Study on Adsorption of Crosslinked Starch Microspheres towards Heavy Metal Ions

2013 ◽  
Vol 834-836 ◽  
pp. 531-535
Author(s):  
Li Yan Yang ◽  
Yi Hui Guo ◽  
Li Li Yu ◽  
Jing You
Keyword(s):  
Metal Ions ◽  
Reversed Phase ◽  
Adsorption Rate ◽  
X Ray Diffraction ◽  
Adsorption Selectivity ◽  
X Ray ◽  
Starch Microsphere ◽  
Other Substances ◽  
Effects Of Media ◽  
Kinetics Of

A type of cross-linking starch microsphere (CSMs) has been synthesized via reversed phase suspension method. Crosslinked starch microsphere has good adsorption performance to metal ions in water. The adsorption kinetics of Co (II) on the CSMs, selectivity of adsorption CSMs towards Co (II),Cu (II),Pb (II),Cd (II) and adsorption effects of media towards Co (II) were investigated. The CSMs and its adsorption product were comparatively characterized by X-ray diffraction (XRD). The results showed that The adsorption rate is mainly controlled by liquid film diffusion, and the constant of adsorption rate is 0.0686min-1 at 308K. The crystal structure of the CSMs decreased greatly after the incorporation of Co (II). Co (II) has better adsorption selectivity on CSMs. Ions coexist and other substances in the solution have certain impact on adsorption. Those data are helpful for treatment of the wastewater containing heavy ions.

Efficient adsorption of chlorpyrifos onto modified activated carbon by gamma irradiation; a plausible adsorption mechanism

2021 ◽  
Vol 0 (0) ◽  
Author(s):  
Mohamed S. Yahia ◽  
Ahmed S. Elzaref ◽  
Magdy B. Awad ◽  
Ahmed M. Tony ◽  
Ahmed S. Elfeky
Keyword(s):  
Gamma Irradiation ◽  
Area Measurement ◽  
Maximum Adsorption Capacity ◽  
X Ray Diffraction ◽  
X Ray ◽  
First Order ◽  
Pseudo Second Order ◽  
Ft Ir ◽  
Pseudo First Order ◽  
Kinetics Of

Abstract Commercial Granulated Active Carbon (GAC) has been modified using 10 Gy dose Gamma irradiation (GAC10 Gy) for increasing its ability of air purification. Both, the raw and treated samples were applied for removing Chlorpyrifos pesticide (CPF) from ambient midair. Physicochemical properties of the two materials were characterized by Fourier Transform Infrared (FT-IR) and Raman spectroscopy. The phase formation and microstructure were monitored using X-ray Diffraction (XRD), Scanning Electron Microscopy (SEM), supported with Energy-Dispersive X-ray (EDX). The Surface area measurement was detected using BET particle size prosometry. Obtained outcomes showed that, the maximum adsorption capacity, given by Langmuir equations, was greatly increased from 172.712 to 272.480 mg/g for GAC and GAC10 Gy, respectively, with high selectivity. The overall removal efficiency of GAC10 Gy was notably comparable to that of the original GAC-sorbent. The present study indicated that, gamma irradiation could be a promising technique for treating GAC and turned it more active in eliminating the pesticides pollutants from surrounding air. The data of equilibrium has been analyzed by Langmuir and Freundlich models, that were considerably better suited for the investigated materials than other models. The process kinetics of CPF adsorbed onto both tested carbon versions were found to obey the pseudo first order at all concentrations with an exception at 70 mg/l using GAC, where, the spontaneous exothermic adsorption of Chlorpyrifos is a strong function for the pseudo-first order (PFO) and pseudo second order (PSO) kinetics.

Sign in / Sign up

Export Citation Format

Share Document