CW Laser Annealed Small-Geometry NMOS Transistors

1983 ◽  
Vol 23 ◽  
Author(s):  
A.A. Naem ◽  
A.R. Boothroyd ◽  
I.D. Calder
Keyword(s):  
Laser Annealing ◽  
Lateral Diffusion ◽  
Argon Laser ◽  
Narrow Channel ◽  
Square Channel ◽  
Cw Laser ◽  
Channel Effects ◽  
Channel Lengths ◽  
Nmos Transistors

ABSTRACTSmall geometry NMOS transistors were fabricated using junctions implanted with 1016; Asplus;/cm2; @ 180 keV and annealed through 1067 Å of SiO 2; with a cw argon laser. Phosphosilicate glass densification was the only other high temperature step. Channel lengths were varied from 1.3 to 50 μ. and channel widths from 1 to 50,μ. Physical characterization of these devices revealed a junction depth of 3000 Å with negligible lateral diffusion. The smallest transistor had approximately a square channel with WxL = 1×l.3μ2;. IDS;−VDS; characteristics of this device were similar to those of large geometry devices due to counteracting short and narrow channel effects. The threshold voltage was 0.61±0.013 V across an entire wafer, while there was no punch-through for VDS;<13 V and no avalanche breakdown for VDS; < 14 V. The junctions showed a forward-biased ideality factor of 1.17, and the contact resistance in an 8 × 8 μ2; area was 1.5Ω to the source/drain regions and 0.5Ω to laser-recrystallized polysilicon interconnects. It is concluded that cw laser annealing can be used to fabricate small-geometry devices with excellent performance and without any deleterious effects.

Enhanced Activation of Standard and Cocktail Spike Annealed Junctions with Additional Sub-melt Laser Anneal

2006 ◽  
Vol 912 ◽  
Author(s):  
Simone Severi ◽  
Emmanuel Augendre ◽  
Bartek Pawlak ◽  
Pierre Eyben ◽  
Taiji Noda ◽  
...  
Keyword(s):  
Performance Improvement ◽  
Laser Annealing ◽  
Short Channel Effects ◽  
Short Channel ◽  
Spacer Length ◽  
Partial Dissolution ◽  
Channel Effects ◽  
Laser Anneal ◽  
And Performance ◽  
Nmos Transistors

AbstractThe advantages of fluorine co-implantation on reducing the deep P junction profile is investigated and commented as a possible valuable solution for further scaling of the NMOS transistors spacer length. On PMOS transistors, Ge+C+B cocktail junctions lead to improved short channel effects control, S/D resistance and performance over the conventional approaches. Additional laser annealing induces a partial dissolution of the doping clusters in the junction and lower the S/D transistors resistance. A performance improvement is demonstrated both for NMOS and PMOS with cocktail junctions activated by spike RTA and additional laser annealing.

Structural and Electrical Characterization of Shaped Beam Laser Recrystallized Polysilicon on Amorphous Substrates

1981 ◽  
Vol 4 ◽  
Author(s):  
T. J. Stultz ◽  
J. F. Gibbons
Keyword(s):  
Grain Size ◽  
Electrical Characterization ◽  
Grain Structure ◽  
Electrical Characteristics ◽  
Shaped Beam ◽  
Beam Laser ◽  
Cw Laser ◽  
Amorphous Substrates ◽  
Circular Beam

ABSTRACTStructural and electrical characterization of laser recrystallized LPCVD silicon films on amorphous substrates using a shaped cw laser beam have been performed. In comparing the results to data obtained using a circular beam, it was found that a significant increase in grain size can be achieved and that the surface morphology of the shaped beam recrystallized material was much smoother. It was also found that whereas circular beam recrystallized material has a random grain structure, shaped beam material is highly oriented with a <100> texture. Finally the electrical characteristics of the recrystallized film were very good when measured in directions parallel to the grain boundaries.

scholarly journals A comparison between furnace and cw laser annealing of a-Si : evidence of different crystallization states

1982 ◽  
Vol 17 (12) ◽  
pp. 783-786 ◽  
Author(s):  
D. Bensahel ◽  
G. Auvert ◽  
Y. Pauleau ◽  
J.C. Pfister
Keyword(s):  
Laser Annealing ◽  
Cw Laser

Optical, Structural and Electrical Characteristics of Explosively Crystallized Si Thin Films on Glass Substrates

1981 ◽  
Vol 4 ◽  
Author(s):  
G. Auvert ◽  
D. Bensahel ◽  
A. Perio ◽  
F. Morin ◽  
G.A. Rozgonyi ◽  
...  
Keyword(s):  
Thin Films ◽  
Electrical Properties ◽  
Laser Annealing ◽  
The State ◽  
Electrical Characteristics ◽  
Glass Substrates ◽  
Explosive Crystallization ◽  
Cw Laser ◽  
Structural And Electrical Properties ◽  
Si Films

ABSTRACTExplosive Crystallization occurs in cw laser annealing on a-Si films deposited on glass substrates at laser scan speeds higher than 30 cm/sec. Optical, structural and electrical properties of the crystallized films at various laser scan speeds confirm the existence of two kinds of explosive growth depending on the state of crystallinity of the starting material.

Optimized Impingement Configurations for Double Wall Cooling Applications

2011 ◽  
Author(s):  
Preston Stoakes ◽  
Srinath Ekkad
Keyword(s):  
Heat Transfer ◽  
Narrow Channel ◽  
Main Channel ◽  
Channel Height ◽  
Strong Impact ◽  
Multiple Parameters ◽  
Square Channel ◽  
Preliminary Study ◽  
Optimization Methodology ◽  
Double Wall

Double wall cooling is a very effective technique for increasing heat transfer in hot gas path components utilizing a narrow channel near the surface of the component. Multiple techniques exist to increase the heat transfer within the narrow channel, including the use of impingement jets, turbulators and microchannels. A preliminary study has been performed using computational fluid dynamics (CFD) to determine the heat transfer benefits of double wall cooling technology when compared to a smooth wall square channel and a ribbed wall square channel. Conjugate CFD simulations of flow through an aluminum channel were performed to include the effects of conduction through the solid and convection within the main channel. The design for the preliminary study consists of a square main channel and a narrow impingement channel connected by a series of holes creating impingement jets on the outer surface of the impingement channel. The study examines multiple parameters to increase heat transfer without increasing the pumping power required. The parameters studied include diameter of impingement jets, jet-to-jet spacing, number of impingement jets, and jet-to-wall spacing. Results show that the impingement channel height-to-diameter ratio has a strong impact on heat transfer effectiveness. This study also provides a new optimization methodology for improving cooling designs with specific targets.

Analysis of Omega-Gate Nanowire SOI MOSFET Under Analog Point of View

2020 ◽  
Vol 15 (1) ◽  
pp. 1-6
Author(s):  
Welder Fernandes Perina ◽  
João Antonio Martino ◽  
Paula Ghedini Der Agopian
Keyword(s):  
Point Of View ◽  
Short Channel Effects ◽  
Theoretical Limit ◽  
Short Channel ◽  
Worst Case ◽  
Channel Effects ◽  
Electrostatic Coupling ◽  
Channel Lengths ◽  
P Type ◽  
New Applications

This paper presents an evaluation of omega-gate nanowire n- and p-type SOI MOSFETs performance focusing on the main analog figures of merit. The different channel widths (WNW) and channel lengths (L) were also evaluated. These devices presented values of subthreshold slope near the theoretical limit at room temperature (60 mV/dec) and in the worst case a DIBL value smaller than 70 mV/V showing its immunity to short channel effects (SCEs) in the range studied. The narrowest device showed great electrostatic coupling, improving transconductance (gm), presenting an unit gain frequency over 200 GHz and intrinsic voltage gain over 80 dB. These values suggests that this device is capable of achieving good performance on new applications such as 5G communications and Internet-of-Things (IoT).

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