Electronic And Structural Properties Of Interfaces Created By Potassium Deposition ON TiO2 (110) Surfaces

1991 ◽  
Vol 238 ◽  
Author(s):  
R. J. Lad ◽  
L. S. Dake
Keyword(s):  
Electronic States ◽  
Sharp Drop ◽  
Surface Band ◽  
Band Bending ◽  
Interface Composition ◽  
Oxygen Anions ◽  
Electronic And Structural Properties ◽  
Potassium Deposition ◽  
Metallic Potassium ◽  
Large Charge

ABSTRACTPotassium was deposited onto stoichiometric TiO2 (110) surfaces and the chemical bonding and structure were studied with UPS, XPS, LEED, and RHEED. Potassium interacts strongly with the oxygen anions of the TiO2 and reduces the valency of Ti cations at the interface. At submonolayer potassium coverages, a large charge transfer to the substrate causes a sharp drop in work function, a population of electronic states within the bulk TiO2 band gap, and surface band bending. After large potassium doses at 300 K, multilayers of K2O are formed by diffusion of oxygen anions from the substrate, creating a substoichiometric TiO2−x interface composition. No metallic potassium is present even after large doses. The K2O layers remain stable after annealing as high as 900 K, and LEED indicates that they are disordered. RHEED characterization is limited by the roughness of the stoichiometric TiO2 (110) surface.

scholarly journals Influence of surface band bending on a narrow band gap semiconductor: Tunneling atomic force studies of graphite with Bernal and rhombohedral stacking orders

2021 ◽  
Vol 5 (4) ◽  
Author(s):  
Regina Ariskina ◽  
Michael Schnedler ◽  
Pablo D. Esquinazi ◽  
Ana Champi ◽  
Markus Stiller ◽  
...  
Keyword(s):  
Band Gap ◽  
Narrow Band ◽  
Surface Band ◽  
Band Bending ◽  
Atomic Force

Evidence of nitric-oxide-induced surface band bending of indium tin oxide

2004 ◽  
Vol 95 (11) ◽  
pp. 6273-6276 ◽  
Author(s):  
Jianqiao Hu ◽  
Jisheng Pan ◽  
Furong Zhu ◽  
Hao Gong
Keyword(s):  
Nitric Oxide ◽  
Tin Oxide ◽  
Indium Tin Oxide ◽  
Surface Band ◽  
Band Bending

Surface band bending and carrier dynamics in colloidal quantum dot solids

Nanoscale ◽  
2021 ◽  
Author(s):  
Pip C. J. Clark ◽  
Nathan K Lewis ◽  
Chun-Ren Ke ◽  
Rubén Ahumada-Lazo ◽  
Qian Chen ◽  
...  
Keyword(s):  
Quantum Dot ◽  
Carrier Dynamics ◽  
Charge Carriers ◽  
Surface Band ◽  
Band Bending ◽  
Colloidal Quantum Dot ◽  
Band Alignments

Band bending in colloidal quantum dot (CQD) solids has become important in driving charge carriers through devices. This is typically a result of band alignments at junctions in the device....

The Effect of Surface States on Secondary Electron (SE) Dopant Contrast from Silicon p-n Junctions

2007 ◽  
Vol 1026 ◽  
Author(s):  
Augustus K. W. Chee ◽  
Conny Rodenburg ◽  
Colin John Humphreys
Keyword(s):  
Oxide Layer ◽  
Computer Modelling ◽  
Surface States ◽  
Native Oxide ◽  
Native Oxide Layer ◽  
Element Analysis ◽  
Surface Band ◽  
Band Bending ◽  
Wide Range ◽  
Se Doping

AbstractDetailed computer modelling using finite-element analysis was performed for Si p-n junctions to investigate the effects of surface states and doping concentrations on surface band-bending, surface junction potentials and external patch fields. The density of surface states was determined for our Si specimens with a native oxide layer. Our calculations show that for a typical density of surface states for a Si specimen with a native oxide layer, the effects of external patch fields are negligible and the SE doping contrast is due to the built-in voltage across the p-n junction modified by surface band-bending. There is a good agreement between the experimental doping contrast and the calculated junction potential just below the surface, taking into account surface states, for a wide range of doping concentrations.

scholarly journals Surface band bending in as-grown and plasma-treated n-type GaN films using surface potential electric force microscopy

2004 ◽  
Vol 84 (16) ◽  
pp. 3070-3072 ◽  
Author(s):  
Sang-Jun Cho ◽  
Seydi Doğan ◽  
Shahriar Sabuktagin ◽  
Michael A. Reshchikov ◽  
Daniel K. Johnstone ◽  
...  
Keyword(s):  
Surface Potential ◽  
Electric Force ◽  
Surface Band ◽  
Band Bending ◽  
Force Microscopy ◽  
Electric Force Microscopy

Effect of near-surface band bending on dopant profiles in ion-implanted silicon

2004 ◽  
Vol 95 (3) ◽  
pp. 1134-1140 ◽  
Author(s):  
Michael Y. L. Jung ◽  
Rudiyanto Gunawan ◽  
Richard D. Braatz ◽  
E. G. Seebauer
Keyword(s):  
Surface Band ◽  
Band Bending ◽  
Near Surface ◽  
Dopant Profiles ◽  
Ion Implanted

Passivation of Gaas by Novel P2S5/(NH4)2Sx Sulfurization Techniques

1992 ◽  
Vol 281 ◽  
Author(s):  
J. T. Hsieh ◽  
C. Y. Sun ◽  
H. L. Hwang
Keyword(s):  
Photoelectron Spectroscopy ◽  
Surface Passivation ◽  
Schottky Diodes ◽  
Lower Surface ◽  
State Density ◽  
Surface Band ◽  
Band Bending ◽  
Barrier Heights ◽  
Effective Barrier ◽  
Metal Work

ABSTRACTA new surface passivation technique using P2S5/(NH4)2S on GaAs was investigated, and the results are compared with those of the (NH4)2Sx treatment. With this new surface treatment, the effective barrier heights for both Al- and Au—GaAs Schottky diodes were found to vary with the metal work functions, which is a clear evidence of the lower surface state density. Results of I—V measurements show that P2S5/(NH4)2S—passivated diodes have lower reverse leakage current and higher effective barrier height than those of the (NH4)2Sx -treated ones. Auger Electron Spectroscopy, X—ray photoelectron spectroscopy and Raman scattering measurements were done to characterize the surfaces including their compositions and surface band bending. In this paper, interpretations on this novel passivation effect is also provided.

Angular dependent XPS study of surface band bending on Ga-polar n-GaN

2018 ◽  
Vol 440 ◽  
pp. 637-642 ◽  
Author(s):  
Rong Huang ◽  
Tong Liu ◽  
Yanfei Zhao ◽  
Yafeng Zhu ◽  
Zengli Huang ◽  
...  
Keyword(s):  
Surface Band ◽  
Band Bending ◽  
Xps Study
Sign in / Sign up

Export Citation Format

Share Document