EPITAXIAL GROWTH OF TRANSPARENT CONDUCTIVE OXIDES

2002 ◽  
Vol 16 (01n02) ◽  
pp. 173-180 ◽  
Author(s):  
HIROMICHI OHTA ◽  
MASAHIRO ORITA ◽  
MASAHIRO HIRANO ◽  
KAZUSHIGE UEDA ◽  
HIDEO HOSONO
Keyword(s):  
Electron Microscope ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
Heteroepitaxial Growth ◽  
X Ray Diffraction ◽  
Transparent Conductive Oxides ◽  
X Ray ◽  
Large Lattice ◽  
Film Substrate ◽  
Edge Dislocations

Transparent conductive oxides of ITO , ZnO , β- Ga 2 O 3, and CuGaO 2 and SrCu 2 O 2 were grown on single crystal substrates of α- Al 2 O 3 and YSZ by pulsed-laser deposition, and their crystallinity was evaluated by using high-resolution X-ray diffraction and electron microscope. Heteroepitaxial growth was observed in spite of relatively large lattice mismatches between film and substrate. A few disordered layers were generated automatically at film/substrate boundary, played buffer layer to suppress propagation of edge dislocations.

Heteroepitaxial Growth of Cubic Boron Nitride on Silicon

1992 ◽  
Vol 242 ◽  
Author(s):  
G. L. Doll ◽  
T. A. Perry ◽  
J. A. Sell ◽  
C. A. TAYLORS ◽  
R. Clarke
Keyword(s):  
Cubic Boron Nitride ◽  
Pulsed Laser ◽  
Growth Conditions ◽  
Critical Value ◽  
Laser Deposition ◽  
Heteroepitaxial Growth ◽  
X Ray Diffraction ◽  
Present Evidence ◽  
X Ray ◽  
Si Substrates

ABSTRACTNew x-ray diffraction measurements performed on bonm nitride films deposited by pulsed excimer laser deposition are presented. The x-ray data, taken with both a molybdenum rotating anode source and synchrotron radiation, indicate that the epitaxial cBN films are ≤ 200 Å thick. We also report the successful growth of oriented crystalline diamond on the (001) surface of cBN/Si substrates using the method of pulsed laser deposition. X-ray diffraction measurements indicate that the diamond layer is 200 Å thick with a lattice constant of 3.56 Å. The structures of metastable films (cBN and diamond) are very sensitive to growth conditions: we present evidence that an epitaxial-crystalline to incoherent phase transition occurs when the thickness of the films exceeds a critical value (∼ 200 Å for our present growth conditions).

Epitaxial growth of skutterudite (CoSb3) thin films on (001) InSb by pulsed laser deposition

2001 ◽  
Vol 16 (9) ◽  
pp. 2467-2470 ◽  
Author(s):  
J. C. Caylor ◽  
M. S. Sander ◽  
A. M. Stacy ◽  
J. S. Harper ◽  
R. Gronsky ◽  
...  
Keyword(s):  
Pulsed Laser Deposition ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
Heteroepitaxial Growth ◽  
X Ray Diffraction ◽  
Epitaxial Relationship ◽  
X Ray ◽  
Zinc Blende ◽  
Transmission Electron ◽  
Zinc Blende Structure

Heteroepitaxial growth of the cubic skutterudite phase CoSb3 on (001) InSb substrates was achieved by pulsed laser deposition using a substrate temperature of 270 °C and a bulk CoSb3 target with 0.75 at.% excess Sb. An InSb (a0 = 4 0.6478 nm) substrate was chosen for its lattice registry with the antimonide skutterudites (e.g., CoSb3 with a = 0 4 0.9034 nm) on the basis of a presumed 45° rotated relationship with the InSb zinc blende structure. X-ray diffraction and transmission electron microscopy confirmed both the structure of the films and their epitaxial relationship: (001)CoSb3 ∥ (001)InSb; [100]CoSb3 ∥ [110]InSb.

Heteroepitaxial Growth of In203 on Ysz (100) Single Crystal Surface

1999 ◽  
Vol 558 ◽  
Author(s):  
M. Orita ◽  
H. Ohta ◽  
H. Tanji ◽  
H. Hosono ◽  
H. Kawazoe
Keyword(s):  
Single Crystal ◽  
Crystal Surface ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
Full Width ◽  
Half Maximum ◽  
Single Crystal Surface ◽  
Heteroepitaxial Growth ◽  
X Ray Diffraction ◽  
X Ray

ABSTRACTIn203 films were deposited on YSZ (001) single crystal surface at 800°C at an oxygen pressure of 14 Pa by pulsed laser deposition (PLD) method. A heteroepitaxial relationship between the film and the substrate was seen in TEM photographs and X-ray diffraction measurements. The w locking curve full width of half maximum (FWHM) of the In203 (004) x-ray diffraction was 0.06°. Film conductivities were ∼10 S/cm or less, while carriers on the order of lO18/cm3 were generated.

Heteroepitaxial growth of TaN on MgO(001) and TiN(001)/Si(001) by pulsed laser deposition

2001 ◽  
Vol 672 ◽  
Author(s):  
H. Y. Cheung ◽  
K.H. Wong
Keyword(s):  
Pulsed Laser Deposition ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
Structural Quality ◽  
Heteroepitaxial Growth ◽  
X Ray Diffraction ◽  
Cross Sectional ◽  
Plan View ◽  
Diffraction Profile ◽  
X Ray

ABSTRACTEpitaxial TaN(001) films have been successfully grown on MgO(001) single crystal and TiN(001) buffered Si(001) substrates by pulsed laser deposition method. Crystalline TaN layers of about 100 nm thick were deposited under a base pressure of 5 × 10−6 Torr and at substrate temperatures ranging from 500°C to 700°C. X-ray diffraction results suggested that stoichiometric TaN films with cube-on-cube <001>TaN∥<001>MgO heteroepitaxy are obtained in this temperature range. Plan-view and cross-sectional electron microscopy analysis revealed excellent structural quality and sharp interface boundary. TaN films grown on TiN(001) buffered Si(001), however, showed a mixture of TaNx (with x ≤ 1) components. Although the (001)-orientated TaN is always present prominently, the nitrogen deficient TaNx components are often co-existed in the films and show up as a broad peak in the X-ray diffraction profile. Stoichiometric and single phase TaN(001) films can only be obtained in a narrow temperature window at around 550oC and heteroepitaxial relation <001>TaN∥<001>TiN∥<001>Si has been demonstrated.

Polydomain Structure of Epitaxial PbTiO3 films on MgO

1997 ◽  
Vol 493 ◽  
Author(s):  
S. P. Alpay ◽  
A. S. Prakash ◽  
S. Aggarwal ◽  
R. Ramesh ◽  
A. L. Roytburd ◽  
...  
Keyword(s):  
Domain Structure ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
X Ray Diffraction ◽  
X Ray ◽  
Theoretical Predictions ◽  
The Stability ◽  
Increasing Temperature ◽  
Stable Domains ◽  
Domain Stability

ABSTRACTA PbTiO3(001) film grown on MgO(001) by pulsed laser deposition is examined as an example to demonstrate the applications of the domain stability map for epitaxial perovskite films which shows regions of stable domains and fractions of domains in a polydomain structure. X-ray diffraction studies indicate that the film has a …c/a/c/a… domain structure in a temperature range of °C to 400°C with the fraction of c-domains decreasing with increasing temperature. These experimental results are in excellent agreement with theoretical predictions based on the stability map.

Frequency and Temperature Dependence of Dielectric Properties of Orthorhombic HoMnO3 Thin Films

2014 ◽  
Vol 1025-1026 ◽  
pp. 427-431
Author(s):  
Ping Gao ◽  
Wei Zhang ◽  
Wei Tian Wang
Keyword(s):  
Dielectric Properties ◽  
Pulsed Laser ◽  
Signal Amplitude ◽  
Debye Model ◽  
Laser Deposition ◽  
X Ray Diffraction ◽  
X Ray ◽  
Force Microscopy ◽  
Atomic Force ◽  
Cole Diagram

Orthorhombic HoMnO3 films were prepared epitaxially on Nb-doped SrTiO3 single crystal substrates by using pulsed laser deposition technique. The films showed perfectly a-axis crystallographic orientations. X-ray diffraction and atomic force microscopy were used to characterize the films. The complex dielectric properties were measured as functions of frequency (40 Hz~1 MHz) and temperature (80 K~300 K) with a signal amplitude of 50 mv. The respective dielectric relaxation peaks shifted to higher frequency as the measuring temperature increased, with the same development of real part of the complex permittivity. The cole-cole diagram was obtained according to the Debye model, and the effects of relaxation process were discussed.

Study of Raman Spectrum of Fe Doped CeO2 Thin Films Grown by Pulsed Laser Deposition

2010 ◽  
Vol 123-125 ◽  
pp. 375-378 ◽  
Author(s):  
Ram Prakash ◽  
Shalendra Kumar ◽  
Chan Gyu Lee ◽  
S.K. Sharma ◽  
Marcelo Knobel ◽  
...  
Keyword(s):  
Thin Films ◽  
Pulsed Laser Deposition ◽  
Single Phase ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
Fe Doping ◽  
Full Width ◽  
Deposition Technique ◽  
X Ray Diffraction ◽  
X Ray

Ce1-xFexO2 (x=0, 0.01, 0.03 and 0.0 5) thin films were grown by pulsed laser deposition technique on Si and LaAlO3 (LAO) substrates. These films were deposited in vacuum and 200 mTorr oxygen partial pressure for both the substrates. These films were characterized by x-ray diffraction XRD and Raman spectroscopy measurements. XRD results reveal that these films are single phase. Raman results show F2g mode at ~466 cm-1 and defect peak at 489 cm-1 for film that deposited on LAO substrates, full width at half maximum (FWHM) is increasing with Fe doping for films deposited on both the substrates.

Control of Crystallinity of Hydroxyapatite Sheet

2013 ◽  
Vol 583 ◽  
pp. 47-50 ◽  
Author(s):  
Masanobu Kusunoki ◽  
Taiyo Matsuda ◽  
Naoki Fujita ◽  
Yasuhiro Sakoishi ◽  
Ryou Iguchi ◽  
...  
Keyword(s):  
Cell Culture ◽  
Annealing Temperature ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
X Ray Diffraction ◽  
Free Standing ◽  
X Ray ◽  
Electric Oven ◽  
Diffraction Peaks ◽  
Conventional Annealing

A technique to control the crystallinity of hydroxyapatite (HA) was investigated for applications such as dentistry, regenerative medicine, cell culture scaffolding, and bio-sensors. An amorphous HA film was first produced by pulsed laser deposition. After deposition, it was separated from a substrate as a free-standing sheet. Annealing was then performed to control the crystallinity of the sheet. It was found that conventional annealing in an electric oven was not suitable for HA sheets, because it led to curling and cracking. Since such problems were assumed to be caused by thermal stress, annealing was next carried out with the HA sheet enclosed in HA powder in the center of a metal capsule. This method allowed annealing to be successfully carried out without causing any curling or cracking. Uniform pieces with dimensions of 10 mm × 10 mm cut from a large HA sheet were annealed at temperatures of 200 to 800 ºC and then examined using X-ray diffraction. It was found that the intensity of the diffraction peaks associated with crystalline HA changed with annealing temperature, and that the strongest peaks were observed for the sample annealed at 500 ºC. These results indicate that the crystallinity of the HA sheet can be controlled using the proposed method.

CRYSTALLINE SrTiO3 THIN FILMS ON SILICON BY PULSED LASER DEPOSITION

2005 ◽  
Vol 19 (01n03) ◽  
pp. 533-535
Author(s):  
J. H. HAO ◽  
J. GAO
Keyword(s):  
Thin Films ◽  
Pulsed Laser Deposition ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
Perovskite Oxide ◽  
Deposition Technique ◽  
X Ray Diffraction ◽  
Rocking Curve ◽  
X Ray ◽  
Silicon Materials

We have developed a process to grow SrTiO 3 ( STO ) thin films showing single (110) orientation directly on Si by means of pulsed laser deposition technique. The growth of STO films directly on Si has been described. The crystallinity of the grown STO films was characterized by X-ray diffraction analysis of θ-2θ scan and rocking curve. Our results may be of interest for better understanding of the growth based on the perovskite oxide thin films on silicon materials.

Epitaxial Pd-Doped LaFeO3 Films Grown on (100) SrTiO3 by Pulsed Laser Deposition

2014 ◽  
Vol 936 ◽  
pp. 282-286
Author(s):  
Ying Wen Duan
Keyword(s):  
Pulsed Laser Deposition ◽  
Pulsed Laser ◽  
Film Surface ◽  
Laser Deposition ◽  
Structural Quality ◽  
Deposition Technique ◽  
X Ray Diffraction ◽  
Orientation Relationships ◽  
X Ray ◽  
Transmission Electron

Single-crystalline, epitaxial LaFeO3 films with 5 at. % substitution of Pd on the Fe site are grown on (100) SrTiO3 substrate by pulsed-laser deposition technique. The epitaxial orientation relationships are (110)[001]LFPO||(100)[001]STO. X-ray diffraction and transmission electron microscopy reveal that the LFPO films have high structural quality and an atomically sharp LFPO/STO interface. After reduction treatments of as-grown LFPO films, very little Pd escaped the LFPO lattice onto the film surface, the formed Pd (100) particles are oriented epitaxially, and parallel to the LFPO films surface.

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