Thermoelectric Properties of Boron and Boron Phosphide Film

1992 ◽  
Vol 242 ◽  
Author(s):  
Y. Kumashiro ◽  
T. Yokoyama ◽  
J. Nakahura ◽  
K. Hatsuda ◽  
H. Yoshida ◽  
...  
Keyword(s):  
Thermoelectric Properties ◽  
Figure Of Merit ◽  
Molecular Beam ◽  
Chemical Vapor ◽  
Electric Resistivity ◽  
Thermoelectric Figure ◽  
Boron Phosphide ◽  
Molecular Beam Deposition ◽  
P Type ◽  
Beam Deposition

ABSTRACTThis paper describes the thermoelectric properties of amorphous or polycrystalline boron and boron phosphide films prepared using chemical vapor deposition and molecular beam deposition. The temperature dependencies of electrical conductivity of a-B and distorted B13P2 films obey the Mott's rule of loga vs T-1/4, while those of polycrystalline BP films have linear relationship between loga vs T-1. The a-B and B13P2 films have high electric resistivity and show p-type conductors while BP film shows n-type conductor. The estimated thermoelectric figure of merit of boron phosphide film is compatible to that of sintered specimen, but there remains some problems for a-B to alter.

Thermoelectric Properties of Nanograined Si-Ge-Au Thin Films Grown by Molecular Beam Deposition

2017 ◽  
Vol 47 (6) ◽  
pp. 3267-3272 ◽  
Author(s):  
Shunsuke Nishino ◽  
Satoshi Ekino ◽  
Manabu Inukai ◽  
Muthusamy Omprakash ◽  
Masahiro Adachi ◽  
...  
Keyword(s):  
Thin Films ◽  
Thermoelectric Properties ◽  
Molecular Beam ◽  
Molecular Beam Deposition ◽  
Au Thin Films ◽  
Beam Deposition

scholarly journals Development of Spark Plasma Syntering (SPS) technology for preparation of nanocrystalline p-type thermoelctrics based on (BiSb)2Te3

2020 ◽  
Vol 21 (4) ◽  
pp. 628-634
Author(s):  
O. Kostyuk ◽  
B. Dzundza ◽  
M. Maksymuk ◽  
V. Bublik ◽  
L. Chernyak ◽  
...  
Keyword(s):  
Thermoelectric Properties ◽  
Figure Of Merit ◽  
Antimony Telluride ◽  
Bismuth Antimony Telluride ◽  
Thermoelectric Figure ◽  
Temperature Range ◽  
Plasma Sintering ◽  
Different Temperatures ◽  
Spark Plasma ◽  
P Type

Bismuth antimony telluride is the most commonly used commercial thermoelectric material for power generation and refrigeration over the temperature range of 200–400 K. Improving the performance of these materials is a complected balance of optimizing thermoelectric properties. Decreasing the grain size of Bi0.5Sb1.5Te3 significantly reduces the thermal conductivity due to the scattering phonons on the grain boundaries. In this work, it is shown the advances of spark plasma sintering (SPS) for the preparation of nanocrystalline p-type thermoelectrics based on Bi0.5Sb1.5Te3 at different temperatures (240, 350, 400oC). The complex study of structural and thermoelectric properties of Bi0.5Sb1.5Te3 were presented. The high dimensionless thermoelectric figure of merit ZT ~ 1 or some more over 300–400 K temperature range for nanocrystalline p-type Bi0.5Sb1.5Te3 was obtained.

Optimization of High Thermoelectric Figure-of-Merit in p-type Ag1-x(Pb1-ySny)mSb1-zTem+2

2007 ◽  
Vol 1044 ◽  
Author(s):  
Kyunghan Ahn ◽  
Mercouri G Kanatzidis
Keyword(s):  
High Temperature ◽  
Thermoelectric Properties ◽  
High Performance ◽  
Figure Of Merit ◽  
Thermoelectric Figure Of Merit ◽  
Thermoelectric Figure ◽  
Practical Applications ◽  
P Type

AbstractThe Ag1-x(Pb1-ySny)mSb1-zTem+2 compounds have been found to exhibit high performance p-type thermoelectric properties and are now being considered for practical applications. In this paper, various m values and silver concentrations were investigated to determine the effect on thermoelectric properties. Also, the charge-compensated compounds were studied in order to eliminate the problem of excess tellurium evaporation at high temperature.

scholarly journals Thermoelectric properties of DO3 V3Al using first principles calculations

RSC Advances ◽  
2017 ◽  
Vol 7 (71) ◽  
pp. 44647-44654 ◽  
Author(s):  
Xiaorui Chen ◽  
Yuhong Huang ◽  
Hong Chen
Keyword(s):  
Thermoelectric Properties ◽  
First Principles ◽  
Figure Of Merit ◽  
Thermoelectric Figure Of Merit ◽  
First Principles Calculations ◽  
Thermoelectric Figure ◽  
P Type

The calculated thermoelectric figure of merit ZT as a function of temperature for n-type antiferromagnetic DO3 V3Al and p-type antiferromagnetic DO3 V3Al is investigated.

Thermoelectric properties of the incommensurate layered semiconductor GexNbTe2

2000 ◽  
Vol 15 (12) ◽  
pp. 2789-2793 ◽  
Author(s):  
G. Jeffrey Snyder ◽  
T. Caillat ◽  
J-P. Fleurial
Keyword(s):  
Thermal Conductivity ◽  
Thermoelectric Properties ◽  
Carrier Mobility ◽  
Figure Of Merit ◽  
Layered Semiconductor ◽  
Thermoelectric Figure ◽  
Type Semiconductor ◽  
P Type ◽  
Related Compounds ◽  
Germanium Concentration

The compounds GexNbTe2 (0.39 ≤ x ≤ 0.53) have been studied for their thermoelectric properties. By changing x, the carrier concentration can be adjusted so that the material changes from a p-type metal to a p-type semiconductor. The maximum germanium concentration at about Ge0.5NbTe2 is also the most semiconducting composition. High- and low-temperature electrical resistivity, Hall effect, Seebeck coefficient, and thermal conductivity were measured. Evidence of electronic ordering was found in some samples. The thermal conductivity is reasonably low and glasslike with room temperature values around 20–25 mW/cm K. However, the power factor is too low to compete with state-of-the-art materials. The maximum thermoelectric figure of merit, ZT found in these compounds is about 0.12. The low ZT can be traced to the low carrier mobility of about 10 cm2 /Vs. The related compounds Si0.5NbTe2 and Ge0.5TaTe2 were also studied.

High Thermoelectric Performance of p-Type Bi0.5Sb1.5Te3+xTe Crystals Prepared via Gradient Freezing

2012 ◽  
Vol 621 ◽  
pp. 167-171
Author(s):  
Tao Hua Liang ◽  
Shi Qing Yang ◽  
Zhi Chen ◽  
Qing Xue Yang
Keyword(s):  
Thermal Conductivity ◽  
Seebeck Coefficient ◽  
Carrier Concentration ◽  
Thermoelectric Properties ◽  
Figure Of Merit ◽  
Room Temperature ◽  
Thermoelectric Performance ◽  
Thermoelectric Figure Of Merit ◽  
Thermoelectric Figure ◽  
P Type

p-type Bi0.5Sb1.5Te3+xTe thermoelectric crystals with various percentages of Te (x = 0.00 wt.%–3.00 wt.%) excess were prepared by the gradient freeze method. By doping with different Te contents, anti-site defects, Te vacancies and hole carrier concentrations were controlled. The Seebeck coefficient, resistivity, thermal conductivity, carrier concentration, and mobility were measured. The relationships between the Te content and thermoelectric properties were investigated in detail. The results suggested that the thermoelectric figure of merit ZT of the Bi0.5Sb1.5Te3+0.09wt.% crystals was 1.36 near room temperature, the optimum carrier concentration was 1.25 × 1019 cm-3, and the mobility was 1480 cm2 V-1 S-1, respectively.

Thermoelectric Properties of Ni Doped P-Type BiCuSeO Oxyselenides

2014 ◽  
Vol 602-603 ◽  
pp. 906-909 ◽  
Author(s):  
Yao Chun Liu ◽  
Jun Fu Liu ◽  
Bo Ping Zhang ◽  
Yuan Hua Lin
Keyword(s):  
Thermal Conductivity ◽  
Electrical Conductivity ◽  
Seebeck Coefficient ◽  
Thermoelectric Properties ◽  
Figure Of Merit ◽  
Layer Structure ◽  
Thermoelectric Figure Of Merit ◽  
Ni Doping ◽  
Thermoelectric Figure ◽  
P Type

We report on the effect of Ni doping on the thermoelectric properties of p-type BiCuSeO oxyselenide, with layer structure composed of conductive (Cu2Se2)2-layers alternately stacked with insulating (Bi2O2)2+layers along c axis. After doping with Ni, enhanced electrical conductivity coupled with a moderate Seebeck coefficient leads to a power factor of ~231 μwm-1K-2at 873 K. Coupled to low thermal conductivity, ZT at 873 K is increased from 0.35 for pristine BiCuSeO to 0.39 for Bi0.95Ni0.05CuSeO. However, the efficiency of Ni doping in the insulating (Bi2O2)2+layer is low, and this doping only leads to a limited increase of the hole carriers concentration. Therefore Ni doped BiCuSeO has relatively low electrical conductivity which makes its thermoelectric figure of merit much lower than that of Ca, Sr, Ba and Pb doped BiCuSeO.

A device for sublimation molecular beam deposition of erbium-doped silicon films

2000 ◽  
Vol 43 (4) ◽  
pp. 564-565
Author(s):  
S. P. Svetlov ◽  
V. Yu. Chalkov ◽  
V. G. Shengurov
Keyword(s):  
Molecular Beam ◽  
Silicon Films ◽  
Molecular Beam Deposition ◽  
Erbium Doped ◽  
Doped Silicon ◽  
Beam Deposition
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