TXRF Characterization of Trace Metal Contamination in Thin Gate Oxides

1992 ◽  
Vol 259 ◽  
Author(s):  
R. S. Hockett ◽  
Diane Hymes
Keyword(s):  
Metal Contamination ◽  
Gate Oxide ◽  
Silicon Substrates ◽  
Qualitative Information ◽  
Gate Oxides ◽  
Quantitative Estimates ◽  
Oxide Reliability ◽  
First Time ◽  
Non Destructive

ABSTRACTMetal contamination on the surface of silicon substrates before gate oxidation is known to affect gate oxide reliability. For the first time this study presents a non-destructive, analytical measurement of transition metals in an 8nm gate oxide grown by a 920 °C-10min-dry oxidation of an intentionally contaminated silicon surface. The TECHNOS TREX 610 TXRF anglescan of the gate oxide provides qualitative information on the location of the metals. The data indicate the Fe is on or in the oxide, the Cu is below the oxide, the Zn is on the oxide, and the Ni may be both in the oxide and below the oxide layer. In addition, quantitative estimates from the TXRF data indicate that all the original Fe and Cu are present, while only portions of Zn and Ni are detected after the oxidation.

scholarly journals Identification of pigments in artworks by inverse tangent derivative of spectrum and a new filtering method

2020 ◽  
Vol 8 (1) ◽  
Author(s):  
F. Fazlali ◽  
S. Gorji Kandi
Keyword(s):  
Reflectance Spectrum ◽  
Practical Method ◽  
Chemical Methods ◽  
Munk Function ◽  
Absorption Of Light ◽  
Spectrophotometric Data ◽  
First Time ◽  
Non Destructive ◽  
Derivatives Of

Abstract Employing an economical and non-destructive method for identifying pigments utilized in artworks is a significant aspect for preserving their antiquity value. One of the non-destructive methods for this purpose is spectrophotometry, which is based on the selected absorption of light. Mathematical descriptive methods such as derivatives of the reflectance spectrum, the Kubelka–Munk function and logarithm have been employed for the characterization of the peak features corresponding to the spectrophotometric data. In the present study, the mentioned mathematical descriptive methods were investigated with the aim to characterize the constituents of an Iranian artwork but were not efficient for the samples. Therefore, inverse tangent derivative equation was developed on spectral data for the first time, providing considerable details in the profile of reflectance curves. In the next part, to have a simpler and more practical method it was suggested to use filters made up of pure pigments. By using these filters and placing them on the samples, imaging was done. Then, images of samples with and without filter were evaluated and pure pigments were distinguished. The mentioned methods were also used to identify pigments in a modern Iranian painting specimen. The results confirmed these methods with reliable answers indicating that physical methods (alongside chemical methods) can also be effective in determining the types of pigments.

Reliability and Ruggedness of 1200V SiC Planar Gate MOSFETs Fabricated in a High Volume CMOS Foundry

2018 ◽  
Vol 924 ◽  
pp. 697-702 ◽  
Author(s):  
Sauvik Chowdhury ◽  
Levi Gant ◽  
Blake Powell ◽  
Kasturirangan Rangaswamy ◽  
Kevin Matocha
Keyword(s):  
Room Temperature ◽  
Stress Testing ◽  
Short Circuit ◽  
Gate Oxide ◽  
High Volume ◽  
Inductive Load ◽  
Switching Losses ◽  
Oxide Reliability ◽  
Silicon Cmos

This paper presents the performance, reliability and ruggedness characterization of 1200V, 80mΩ rated SiC planar gate MOSFETs, fabricated in a high volume, 150mm silicon CMOS foundry. The devices showed a specific on-resistance of 5.1 mΩ.cm2 at room temperature, increasing to 7.5 mΩ.cm2 at 175 °C. Total switching losses were less than 300μJ (VDD = 800V, ID = 20A). The devices showed excellent gate oxide reliability with VTH shifts under 0.2V for extended HTGB stress testing at 175 °C for up to 5500 hours (VGS = 25V) and 2500 hours (VGS = -10V). Ruggedness performance such as unclamped inductive load switching and short circuit capability are also discussed.

Characterization of Nitrided Gate Oxide Formed by RTP for SiC MOSFET Application

2011 ◽  
Vol 324 ◽  
pp. 221-224 ◽  
Author(s):  
Aurore Constant ◽  
Philippe Godignon
Keyword(s):  
Gate Oxide ◽  
Breakdown Field ◽  
Gate Oxides ◽  
Furnace Process ◽  
Surface Pretreatment ◽  
Channel Mobility ◽  
Conventional Furnace ◽  
The One

Gate oxides for SiC lateral MOSFETs have been formed in N2O by rapid thermal processing (RTP) as an alternative to the conventional furnace process. This innovative oxidation method has not only the advantage to significantly reduce the thermal budget compared to a standard oxidation, but also to produce oxide layers with quality comparable to the one grown in a conventional furnace. Moreover, a significant improvement of the oxide quality and MOSFET performance is observed when performing in-situ a H2 anneal prior to oxidation as surface pretreatment. The channel mobility and the breakdown field of the gate oxide are considerably increased.

Implementation of Sub-Resolvable Features for Precise Electrical Characterization of SiC Gate Oxide Parameters

2012 ◽  
Vol 717-720 ◽  
pp. 797-800
Author(s):  
J. Jay McMahon ◽  
Liang Chun Yu ◽  
Jody Fronheiser ◽  
J.T. Elson ◽  
Roger Kovalec ◽  
...  
Keyword(s):  
Electrical Characterization ◽  
Gate Oxide ◽  
Screening Tests ◽  
Compensation Mechanism ◽  
Gate Oxides ◽  
Attractive Option ◽  
Van Der Pauw ◽  
Similar Yield

We describe fabrication of Van der Pauw (VDP) structures for characterization of gate oxides grown on 4H SiC epi surfaces. Implementation of sub-resolvable features (SRF) as a corner compensation mechanism is analyzed with challenges and advantages presented. Results of on-wafer screening tests suggest that implementation of SRFs widens tolerance for misalignment, producing similar yield between uncompensated VDPs with 0.2 micron overlap and compensated VDPs with 0.1 micron overlap for structures with best alignment. Optimization of SRFs for SiC could be an attractive option for extending lithographic capability in advanced devices.

Inversion-Channel MOS Devices for Characterization of 4H-SiC/SiO2 Interfaces

2015 ◽  
Vol 821-823 ◽  
pp. 480-483 ◽  
Author(s):  
A.I. Mikhaylov ◽  
Alexey V. Afanasyev ◽  
V.V. Luchinin ◽  
S.A. Reshanov ◽  
Adolf Schöner ◽  
...  
Keyword(s):  
Electrical Properties ◽  
Gate Oxide ◽  
Process Optimisation ◽  
Gate Oxides ◽  
Mos Structure ◽  
Mos Devices ◽  
Inversion Channel ◽  
And Inversion ◽  
Thermally Grown

Electrical properties of the gate oxides thermally grown in N2O on n-type and p-type 4H-SiC have been compared using conventional MOS structure and inversion-channel MOS structure, respectively. Sufficient difference in the electrical properties of the gate oxides grown on n-type and p-type 4H-SiC was revealed. We conclude that the gate oxide process optimisation using inversion-channel MOS devices is superior as compared to the conventional MOS structure.

Gate Oxide Reliability Characterization of Tungsten Polymetal Gate with Low-Contact-Resistive WSix/WN Diffusion Barrier in Memory Devices

2007 ◽  
Vol 46 (11) ◽  
pp. 7256-7262 ◽  
Author(s):  
Min Gyu Sung ◽  
Kwan-Yong Lim ◽  
Heung-Jae Cho ◽  
Seung Ryong Lee ◽  
Se-Aug Jang ◽  
...  
Keyword(s):  
Diffusion Barrier ◽  
Gate Oxide ◽  
Memory Devices ◽  
Oxide Reliability

Modeling and characterization of gate oxide reliability

1988 ◽  
Vol 35 (12) ◽  
pp. 2268-2278 ◽  
Author(s):  
J.C. Lee ◽  
Chen Ih-Chin ◽  
Hu Chenming
Keyword(s):  
Gate Oxide ◽  
Oxide Reliability

scholarly journals Identification of pigments in artworks by inverse tangent derivative of spectrum and a new filtering method

2020 ◽  
Author(s):  
Fatemeh Fazlali ◽  
Saeideh GORJI KANDI
Keyword(s):  
Reflectance Spectrum ◽  
Practical Method ◽  
Chemical Methods ◽  
Munk Function ◽  
Absorption Of Light ◽  
Spectrophotometric Data ◽  
First Time ◽  
Non Destructive ◽  
Derivatives Of

Abstract Employing an economical and non-destructive method for identifying pigments utilized in artworks is a significant aspect for preserving their antiquity value. One of the non-destructive methods for this purpose is spectrophotometry, which is based on the selected absorption of light. Mathematical descriptive methods such as derivatives of the reflectance spectrum, the Kubelka-­Munk function and logarithm have been employed for the characterization of the peak features corresponding to the spectrophotometric data. In the present study, the mentioned mathematical descriptive methods were investigated with the aim to characterize the constituents of an Iranian artwork but were not efficient for the samples. Therefore, inverse tangent derivative equation was developed on spectral data for the first time, providing considerable details in the profile of reflectance curves. In the next part, to have a simpler and more practical method it was suggested to use filters made up of pure pigments. By using these filters and placing them on the samples, imaging was done. Then, images of samples with and without filter were evaluated and pure pigments were distinguished. The mentioned methods were also used to identify pigments in a modern Iranian painting specimen. The results confirmed these methods with reliable answers indicating that physical methods (alongside chemical methods) can also be effective in determining the types of pigments.

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