Inversion-Channel MOS Devices for Characterization of 4H-SiC/SiO2 Interfaces
2015 ◽
Vol 821-823
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pp. 480-483
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Electrical properties of the gate oxides thermally grown in N2O on n-type and p-type 4H-SiC have been compared using conventional MOS structure and inversion-channel MOS structure, respectively. Sufficient difference in the electrical properties of the gate oxides grown on n-type and p-type 4H-SiC was revealed. We conclude that the gate oxide process optimisation using inversion-channel MOS devices is superior as compared to the conventional MOS structure.
2009 ◽
Vol 615-617
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pp. 521-524
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2011 ◽
Vol 324
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pp. 221-224
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2012 ◽
Vol 717-720
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pp. 797-800
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