Fermi Level Inhomogeneities on GaAs(110) Surface Imaged with a Photoelectron Microscope

1992 ◽  
Vol 260 ◽  
Author(s):  
Changyoung Kim ◽  
Paul L. King ◽  
Piero Pianetta
Keyword(s):  
Fermi Level ◽  
Optical Microscope ◽  
Level Energy ◽  
Band Bending ◽  
Highly Correlated ◽  
P Type ◽  
Low Coverage ◽  
Lateral Variations ◽  
Surface Fermi Level ◽  
Better Than

ABSTRACTA photoelectron microscope operating with a retarding field analyzer has been used to exploit core level energy shifts due to band bending in order to directly image Fermi level variations on n- and p-type cleaved GaAs(110) surfaces. Fermi level maps resolved to better than 10 um indicate lateral variations in the surface Fermi level which are often quite abrupt. In agreement with earlier, lower resolution work [1], Fermi level topography is found to be highly correlated with surface roughness as characterized by SEM, optical microscope and stylus profi lometer. The largest defect derived pinnings encountered to date resut in the Fermi level lying 0.5 eV above the VBM for both n- and p-type GaAs. Low coverage In evaporations have the. effect of reducing Fermi level contrast as Fermi levels in formerly unpinned regions move into the gap.

The Effects of Doping and Temperature on the Fermi Level and its Relationship to the Recrystallization Growth Velocity in Ion-Implanted Silicon

1988 ◽  
Vol 100 ◽  
Author(s):  
L. E. Mosley ◽  
M. A. Paesler ◽  
P. D. Richard
Keyword(s):  
Experimental Data ◽  
Activation Energy ◽  
Growth Rate ◽  
Fermi Level ◽  
Growth Velocity ◽  
Growth Process ◽  
Arrhenius Plot ◽  
Velocity Versus ◽  
Band Bending ◽  
P Type

ABSTRACTIt has been observed that doping produces an enhancement in the recrystallization growth rate of silicon made amorphous by ionimplantation. This enhancement has been attributed to a shift of the Fermi level with doping. Evidence supporting this is based on the compensating effect of implantation of n- and p-type dopants together. We have previously proposed a model of the recrystallization growth process based on the diffusion of dangling bonds. We suggested that the rate enhancement is due to band bending at the amorphous-crystalline interface produced by doping. We have calculated the change in activation energy for the recrystallization growth velocity for a number of doping concentrations as a function of temperature. The major contribution to the apparent lowering of the activation energy with doping in an Arrhenius plot of the growth velocity versus I/kT is due to the temperature dependence of the Fermi level. Experimental data are compared with the calculated results. In addition differences in the measured growth rates in thermal and laser annealed samples are discussed, with primary emphasis on the lack of a change in the activation energy with doping in the laser annealed case.

Controlled Surface Fermi-level on the SeS2-passivated n-GaAs (100)

1998 ◽  
Vol 510 ◽  
Author(s):  
Jing xi Sun ◽  
F. J. Himpsel ◽  
T. F. Kuech
Keyword(s):  
Fermi Level ◽  
Photoemission Spectroscopy ◽  
Ambient Conditions ◽  
Surface Band ◽  
Band Bending ◽  
Term Stability ◽  
Long Term Stability ◽  
Synchrotron Radiation Photoemission ◽  
Surface Fermi Level

AbstractSelenium disulfide surface treatment can unpin the surface Fermi-level on n-GaAs (100) surfaces, resulting in a reduction in the surface band bending. The long-term stability of the surface Fermi-level unpinning has been studied using photoreflectance spectroscopy under room ambient conditions. Our results show that the SeS2-treated n-GaAs (100) surface is stable up to four months with negligible shift in the surface Fermi-level being noted. The mechanism of the long-term stability is attributed to the layered surface structure formed on the SeS2-treated n- GaAs (100) surface. The chemical structure of the passivated surface was determined by synchrotron radiation photoemission spectroscopy. The outermost layer of sulfur and arsenicbased sulfides and selenides may protect the electronic passivating layer, which consists of gallium-based selenides, from interaction with the atmosphere.

scholarly journals Tuning the surface Fermi level on p-type gallium nitride nanowires for efficient overall water splitting

2014 ◽  
Vol 5 (1) ◽  
Author(s):  
M. G. Kibria ◽  
S. Zhao ◽  
F. A. Chowdhury ◽  
Q. Wang ◽  
H. P. T. Nguyen ◽  
...  
Keyword(s):  
Gallium Nitride ◽  
Fermi Level ◽  
Water Splitting ◽  
Overall Water Splitting ◽  
P Type ◽  
Surface Fermi Level

Evidence of band bending and surface Fermi level pinning in graphite oxide

Carbon ◽  
2013 ◽  
Vol 57 ◽  
pp. 227-231 ◽  
Author(s):  
Hae Kyung Jeong ◽  
Lingmei Hong ◽  
Xin Zhang ◽  
Eduardo Vega ◽  
P.A. Dowben
Keyword(s):  
Fermi Level ◽  
Graphite Oxide ◽  
Band Bending ◽  
Fermi Level Pinning ◽  
Surface Fermi Level

Abrupt Change in Surface Fermi Level of P-Type InP upon Annealing

2002 ◽  
Vol 41 (Part 1, No. 2B) ◽  
pp. 1067-1071 ◽  
Author(s):  
Tetsuo Kurayama ◽  
Gennki Sano ◽  
Masamichi Sakai
Keyword(s):  
Fermi Level ◽  
Abrupt Change ◽  
P Type ◽  
Surface Fermi Level

scholarly journals Effects of graphene/BN encapsulation, surface functionalization and molecular adsorption on the electronic properties of layered InSe: a first-principles study

2018 ◽  
Vol 20 (18) ◽  
pp. 12939-12947 ◽  
Author(s):  
Andrey A. Kistanov ◽  
Yongqing Cai ◽  
Kun Zhou ◽  
Sergey V. Dmitriev ◽  
Yong-Wei Zhang
Keyword(s):  
Fermi Level ◽  
Work Function ◽  
Electronic Properties ◽  
Surface Functionalization ◽  
First Principles ◽  
Molecular Adsorption ◽  
Band Bending ◽  
Fermi Level Pinning ◽  
First Principles Study ◽  
P Type

A proper adoption of the n- or p-type dopants allows for the modulation of the work function, the Fermi level pinning, the band bending, and the photo-adsorbing efficiency near the InSe surface/interface.

Photoreflectance study of the surface Fermi level at (001) n‐ and p‐type GaAs surfaces

1992 ◽  
Vol 10 (1) ◽  
pp. 131-136 ◽  
Author(s):  
X. Yin ◽  
H‐M. Chen ◽  
F. H. Pollak ◽  
Y. Chan ◽  
P. A. Montano ◽  
...  
Keyword(s):  
Fermi Level ◽  
P Type ◽  
Surface Fermi Level
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