Relaxed Si1−xGex Layers on Simox Avoiding a Lattice Mismatched Heterointerface

1992 ◽  
Vol 263 ◽  
Author(s):  
B. Holländer ◽  
S. Mantl ◽  
R. Butz ◽  
W. Michelsen ◽  
Ch. Dieker
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Surface Layer ◽  
Rapid Thermal Annealing ◽  
Alternative Methods ◽  
Cross Sectional ◽  
Transmission Electron ◽  
Yield Values ◽  
First Time ◽  
Minimum Yield

ABSTRACTFor the first time, Si1 xGex layers on amorphous SiO 2 were produced by modification of the Si surface layer of a SIMOX wafer. We used two alternative methods. An additional Si1.. Gey layer was deposited epitaxially on a SIMOX wafer followed by rapid thermal annealing. Diffusional intermixing of the layers produced a homogeneous Si1 xGex layer on SiO 2. In a second attempt, Ge was implanted into the Si surface layer and thermally treated. In both cases epitaxial Si1 xGex layers on SiO2 with minimum yield values around 9% were obtained. Rutherford backscattering and cross sectional transmission electron microscopy were used to characterize the new structures.

Hrtem Study Of Dislocations In Gesi/Si Heterostructures Grown By VPE

1996 ◽  
Vol 442 ◽  
Author(s):  
Jijnwu Liang ◽  
Xueyuan Wan
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
High Resolution ◽  
Dislocation Loop ◽  
Misfit Dislocation ◽  
Chemical Vapor ◽  
Cross Sectional ◽  
Transmission Electron ◽  
Type Dislocation ◽  
First Time

AbstractGeSi/Si heterostructures grown by atmospheric chemical vapor epitaxy have been studied by cross sectional high resolution transmission electron microscopy (HRTEM). For the first time we have observed an interstitial-type dislocation loop which is located near to a 60° misfit dislocation in the initially prepared GeSi/Si sample. After 30 minutes observation, the interstitial-type dislocation loop disappeared and the 60° dislocation climbed. Moreover, we have observed dissociated 60° dislocations with about 9 nm width of stacking fault existing in silicon substrate.

Compositional Modulations and Vertical Two-Dimensional Arsenic-Precipitate Arrays and in Low Temperature Grown Al0.3GA0.7AS

1993 ◽  
Vol 325 ◽  
Author(s):  
K.Y. Hsieh ◽  
Y.L. Hwang ◽  
T. Zhang ◽  
R.M. Kolbas
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Surface Layer ◽  
Molecular Beam ◽  
Two Dimensional ◽  
Cross Sectional ◽  
Metal Insulator ◽  
Compositional Modulation ◽  
Transmission Electron ◽  
Mis Diode

AbstractCompositional modulations and arsenic precipitates in annealed A10.3Ga0.7As layers which were grown at a low substrate temperature (200° C) by molecular beam epitaxy (MBE) were studied by transmission electron microscopy (TEM). These layers were used as surface layer which were applied on metal-insulator-semiconductor (MIS) diode. The planar and cross sectional TEM micrographs reveal that compositional modulations occurred when the thickness of LT AIGaAs was over 1500Å. The wavelength of the modulations varies between 100-200 Å and the direction of the modulation is along \011]. The arsenic precipitates were formed after annealed and the distribution of them followed the compositional modulation. Vertical two dimensional arsenic-precipitates arrays were arranged in the low aluminum constitute region. These novel microstructures result from the strain-induced spinodal decomposition and the arsenic precipitates redistribution process.

Microstructure of laser-irradiated, conducting Kapton polyimide

1995 ◽  
Vol 53 ◽  
pp. 502-503
Author(s):  
D. L. Callahan ◽  
Z. Ball ◽  
H. M. Phillips ◽  
R. Sauerbrey
Keyword(s):  
Electron Microscopy ◽  
Phase Transition ◽  
Transmission Electron Microscopy ◽  
Cross Section ◽  
Film Surface ◽  
Cross Sectional ◽  
General Utility ◽  
Transmission Electron ◽  
Considerable Debate ◽  
Potential Applications

Ultraviolet laser-irradiation can be used to induce an insulator-to-conductor phase transition on the surface of Kapton polyimide. Such structures have potential applications as resistors or conductors for VLSI applications as well as general utility electrodes. Although the percolative nature of the phase transformation has been well-established, there has been little definitive work on the mechanism or extent of transformation. In particular, there has been considerable debate about whether or not the transition is primarily photothermal in nature, as we propose, or photochemical. In this study, cross-sectional optical microscopy and transmission electron microscopy are utilized to characterize the nature of microstructural changes associated with the laser-induced pyrolysis of polyimide.Laser-modified polyimide samples initially 12 μm thick were prepared in cross-section by standard ultramicrotomy. Resulting contraction in parallel to the film surface has led to distortions in apparent magnification. The scale bars shown are calibrated for the direction normal to the film surface only.

Ion thinning of integrated circuit transverse specimens for transmission electron microscopy

1992 ◽  
Vol 50 (2) ◽  
pp. 1426-1427
Author(s):  
F. Shaapur
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Integrated Circuit ◽  
Substrate Surface ◽  
Homogeneous Material ◽  
Material System ◽  
Ion Milling ◽  
Cross Sectional ◽  
Transmission Electron ◽  
Motion Profile

Non-uniform ion-thinning of heterogenous material structures has constituted a fundamental difficulty in preparation of specimens for transmission electron microscopy (TEM). A variety of corrective procedures have been developed and reported for reducing or eliminating the effect. Some of these techniques are applicable to any non-homogeneous material system and others only to unidirectionalfy heterogeneous samples. Recently, a procedure of the latter type has been developed which is mainly based on a new motion profile for the specimen rotation during ion-milling. This motion profile consists of reversing partial revolutions (RPR) within a fixed sector which is centered around a direction perpendicular to the specimen heterogeneity axis. The ion-milling results obtained through this technique, as studied on a number of thin film cross-sectional TEM (XTEM) specimens, have proved to be superior to those produced via other procedures.XTEM specimens from integrated circuit (IC) devices essentially form a complex unidirectional nonhomogeneous structure. The presence of a variety of mostly lateral features at different levels along the substrate surface (consisting of conductors, semiconductors, and insulators) generally cause non-uniform results if ion-thinned conventionally.

TEM Sample Preparation Tricks for Advanced DRAMs

2015 ◽  
Author(s):  
Ching Shan Sung ◽  
Hsiu Ting Lee ◽  
Jian Shing Luo
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Sample Preparation ◽  
Integrated Circuit ◽  
Focused Ion Beam ◽  
Ion Beam ◽  
Tem Analysis ◽  
Cross Sectional ◽  
Transmission Electron ◽  
Characterization Of Materials

Abstract Transmission electron microscopy (TEM) plays an important role in the structural analysis and characterization of materials for process evaluation and failure analysis in the integrated circuit (IC) industry as device shrinkage continues. It is well known that a high quality TEM sample is one of the keys which enables to facilitate successful TEM analysis. This paper demonstrates a few examples to show the tricks on positioning, protection deposition, sample dicing, and focused ion beam milling of the TEM sample preparation for advanced DRAMs. The micro-structures of the devices and samples architectures were observed by using cross sectional transmission electron microscopy, scanning electron microscopy, and optical microscopy. Following these tricks can help readers to prepare TEM samples with higher quality and efficiency.

scholarly journals Quartz Crystallite Size and Moganite Content as Indicators of the Mineralogical Maturity of the Carboniferous Chert: The Case of Cherts from Eastern Asturias (Spain)

Minerals ◽  
2021 ◽  
Vol 11 (6) ◽  
pp. 611
Author(s):  
Celia Marcos ◽  
María de Uribe-Zorita ◽  
Pedro Álvarez-Lloret ◽  
Alaa Adawy ◽  
Patricia Fernández ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Crystallite Size ◽  
Archaeological Sites ◽  
X Ray Diffraction ◽  
X Ray ◽  
Transmission Electron ◽  
Infrared And Raman Spectroscopy ◽  
First Time ◽  
Geological Formations

Chert samples from different coastal and inland outcrops in the Eastern Asturias (Spain) were mineralogically investigated for the first time for archaeological purposes. X-ray diffraction, X-ray fluorescence, transmission electron microscopy, infrared and Raman spectroscopy and total organic carbon techniques were used. The low content of moganite, since its detection by X-ray diffraction is practically imperceptible, and the crystallite size (over 1000 Å) of the quartz in these cherts would be indicative of its maturity and could potentially be used for dating chert-tools recovered from archaeological sites. Also, this information can constitute essential data to differentiate the cherts and compare them with those used in archaeological tools. However, neither composition nor crystallite size would allow distinguishing between coastal and inland chert outcrops belonging to the same geological formations.

scholarly journals Direct TEM observation of the “acanthite α-Ag2S–argentite β-Ag2S” phase transition in a silver sulfide nanoparticle

2019 ◽  
Vol 1 (4) ◽  
pp. 1581-1588 ◽  
Author(s):  
S. I. Sadovnikov ◽  
E. Yu. Gerasimov
Keyword(s):  
Electron Microscopy ◽  
Phase Transition ◽  
Transmission Electron Microscopy ◽  
Silver Sulfide ◽  
Transmission Electron ◽  
Silver Sulfide Nanoparticles ◽  
Microscopy Method ◽  
Electron Microscopy Method ◽  
First Time

For the first time, the α-Ag2S (acanthite)–β-Ag2S (argentite) phase transition in a single silver sulfide nanoparticles has been observed in situ using a high-resolution transmission electron microscopy method in real time.

Post Oxidation Anneal and Re-Oxidation Effects in 5 nm SiO2 Films

1986 ◽  
Vol 76 ◽  
Author(s):  
L. Dori ◽  
M. Arienzo ◽  
Y. C. Sun ◽  
T. N. Nguyen ◽  
J. Wetzel
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Silicon Dioxide ◽  
Oxygen Vacancies ◽  
Interface Roughness ◽  
Cross Sectional ◽  
Oxide Charge ◽  
Transmission Electron ◽  
Redistribution Of Hydrogen ◽  
Transmission Electron Microscopy Cross

ABSTRACTUltrathin silicon dioxide films, 5 nm thick, were grown in a double-walled furnace at 850°C in dry O2. A consistent improvement in the electrical properties is observed following the oxidation either with a Post-Oxidation Anneal (POA) at 1000°C in N2 or with the same POA followed by a short re-oxidation (Re-Ox) step in which 1 nm of additional oxide was grown. We attribute these results to the redistribution of hydrogen and water related groups as well as to a change in the concentration of sub-oxide charge states at the Si-SiO2 interface. A further improvement observed after the short re-oxidation step had been attributed to the filling of the oxygen vacancies produced during the POA. High resolution Transmission Electron Microscopy cross-sectional observations of the Si-iSO2 interface have evidenced an increase in the interface roughness after the thermal treatment at high temperature. These results are in agreement with recent XPS data.

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