Initial Studies on The Heteroepitaxial Growth of Thin Films of (AI/In)N on Ain-Seeded (00.1) Sapphire by Single-Target Reactive Magnetron Sputtering

1992 ◽  
Vol 263 ◽  
Author(s):  
T. J. Kistenmacher ◽  
S. A. Ecelberger ◽  
W. A. Bryden
Keyword(s):  
Thin Films ◽  
Chemical Composition ◽  
Magnetron Sputtering ◽  
Electrical Transport ◽  
Growth Parameters ◽  
Heteroepitaxial Growth ◽  
X Ray ◽  
X Ray Scattering ◽  
Single Target ◽  
A Cell

ABSTRACTThin films of (AI/In)N alloys have been deposited on AIN-nucleated (00.1) sapphire by reactive (pure N2 gas) magnetron sputtering and characterized by X-ray scattering, stylus profilometry, optical spectroscopy, and electrical transport measurements. Initial efforts have concentrated on producing films with compositions near Al0.31In0.69N (bandgap tailored to GaN). The alloy sputtering targets were disks fabricated by cold pressing appropriate molar mixtures of beads of 99.99% purity Al and In. The resulting thin films are composed of heteroepitaxial grains {(00.1)InNll(00.1)sapphire; (10.0)InNll(11.0)Sapphire} and their chemical composition has been deduced from the variation in the a cell constant (as measured by the X-ray precession method) to yield equilibrium film compositions near Al0.04In0.96N and Al0.25In0.75N, respectively. Preliminary results are presented on the dependence of the quality of heteroepitaxial growth and electrical and optical properties of. these AlxIn1−xN alloy films on various growth parameters: such as chemical composition; film thickness; morphology; and substrate temperature.

Effect of Substrate-Target Distance on the Structure of TiCrN Films Deposited from Mosaic Target by Reactive DC Magnetron Sputtering

2019 ◽  
Vol 798 ◽  
pp. 163-168
Author(s):  
Nirun Witit-Anun ◽  
Adisorn Buranawong
Keyword(s):  
Thin Films ◽  
Chemical Composition ◽  
Magnetron Sputtering ◽  
Crystal Size ◽  
Target Distance ◽  
X Ray ◽  
Force Microscopy ◽  
Si Substrates ◽  
Unbalanced Magnetron ◽  
Deposited Films

Titanium chromium nitride (TiCrN) thin films were deposited on Si substrates by reactive DC unbalanced magnetron sputtering from the Ti-Cr mosaic target. The effect of substrate-to-target distances (dst) on the structure of TiCrN thin films were investigated. The crystal structure, microstructure, thickness, roughness and chemical composition were characterized by glancing angle X-ray diffraction (GAXRD), field emission scanning electron microscopy (FE-SEM), atomic force microscopy (AFM) and energy dispersive X-ray spectroscopy (EDS) technique, respectively. The results showed that, all the as-deposited films were formed as a (Ti,Cr)N solid solution. The as-deposited films exhibited a nanostructure with a crystal size less than 65 nm. The crystal size of all plane were in the range of 36.3 – 65.7 nm. The lattice constants were in the range of 4.169 Å to 4.229 Å. The thickness and roughness decrease from 500 nm to292 nm and 3.6 nm to 2.2 nm, respectively, with increasing the substrate-to-target distance. The chemical composition, Ti, Cr and N contents, of the as-deposited films were varied with the substrate-to-target distance. The as-deposited films showed compact columnar and dense morphology as a result of increasing the substrate-to-target distance.

Effects of Annealing on CuInGaSe2 Solar Cell Prepared by Magnetron Sputtering

2011 ◽  
Author(s):  
Luan Hexin ◽  
Zhuang Daming ◽  
Liu Jiang
Keyword(s):  
Thin Films ◽  
Magnetron Sputtering ◽  
Electronic Properties ◽  
Annealing Temperature ◽  
Chalcopyrite Structure ◽  
X Ray Diffraction ◽  
X Ray ◽  
Selenium Vapor ◽  
A Cell ◽  
Surface Morphologies

CuInxGa1−xSe2 (CIGSe) thin films have been deposited by magnetron sputtering from a CIGSe target and annealed in Se (Selenium) vapor atmosphere. Scanning Electron Microscope (SEM), X-Ray Diffraction (XRD), Raman, X-ray Fluorescence (XRF), Hall tester were used to observe and analyze the compositions, microstructures, surface morphologies and electronic properties of the films. After annealing, the performance of CIGSe films can be improved. The crystalline quality and electronic properties of annealed CIGSe films changed when the annealing temperature increases up to 350°C. CIGSe film with single chalcopyrite structure can be obtained when annealing temperature increases up to 400°C for 120 minutes. Se could be added into the thin films while annealing in Se vapor atmosphere. Cu-Se phase forms at the beginning of annealing and decreased with the increase of annealing time. In this work a cell with efficiency of 7.69% based on the sputtered and annealed CIGSe absorber was obtained.

Growth Morphology of InN Thin Films by Scanning Tunneling and Atomic Force Microscopies and X-Ray Scattering

1993 ◽  
Vol 312 ◽  
Author(s):  
Wayne A. Bryden ◽  
Marilyn E. Hawley ◽  
Scott A. Ecelberger ◽  
Thomas J. Kistenmacher
Keyword(s):  
Thin Films ◽  
Hall Mobility ◽  
Electrical Transport ◽  
Scanning Tunneling ◽  
Growth Morphology ◽  
Nucleation Layer ◽  
X Ray ◽  
X Ray Scattering ◽  
Atomic Force ◽  
Ray Scattering

AbsiractThe evolution of the growth morphology of thin films of InN on (00.1) sapphire and on (00.1) sapphire prenudeated by a layer of AIN have been followed as a function of the thickness of the InN overlayer. The InN thin films and the AIN nucleation layers were deposited by reactive magnetron sputtering and first characterized by X-ray scattering, profilometry, and electrical transport. These AIN-nucleated InN films displayed heteroepitaxial grains, and high Hall mobility -even in the limit of InN overlayer on the order of 20-40Å. In parallel, InN films of varying thickness were grown directly onto (00.1) sapphire. These films showed a mixture of textured and heteroepitaxial grains, and lower Hall mobility. Atomic force and scanning tunneling microscopy studies have focussed on the morphology of the InN films with thicknesses: (a) much smaller than the AIN nucleation layer; and, (b) near the morphological transition that occurs at ∼1μm and has been attributed to the crossover from a 2D to a 3D growth mechanism. Additional correlations of X-ray structural coherence with growth mode are also examined.

Thin films of rf-magnetron sputtered InN on mica: Crystallography, electrical transport, and morphology

1991 ◽  
Vol 6 (6) ◽  
pp. 1300-1307 ◽  
Author(s):  
T.J. Kistenmacher ◽  
W.A. Bryden ◽  
J.S. Morgan ◽  
D. Dayan ◽  
R. Fainchtein ◽  
...  
Keyword(s):  
Thin Films ◽  
Electrical Transport ◽  
Large Fraction ◽  
Rf Magnetron Sputtering ◽  
Electrical Mobility ◽  
X Ray ◽  
X Ray Scattering ◽  
Substrate Temperatures ◽  
Reactive Rf Magnetron Sputtering

Reactive rf-magnetron sputtering has been employed for the growth of thin films of InN on the (001) face of mica at a variety of substrate temperatures from 50 to 550 °C. These films have been characterized by x-ray scattering, stylus profilometry, and electrical transport measurements, and their topography has been studied by SEM and STM. At low deposition temperatures, the InN films exhibit texture [(00.1)InN‖ (001)mica], while at higher deposition temperatures a large fraction of the grains are heteroepitaxial [(00.1)InN‖(001)mica, (2.0)InN · (060)mica]. The utility of the x-ray precession method in the determination of this heteroepitaxial relationship is highlighted. The films exhibit a local mobility maximum near a substrate temperature of 350 °C, beyond which a sharp increase in resistivity associated with voids and cracks owing to the onset of secondary grain growth leads to a dramatic decrease in electrical mobility. At the highest growth temperatures, however, the interconnection between grains improves and lower resistivity and higher mobility are re-established.

ECR-Assisted Reactive Magnetron Sputtering of InN

1994 ◽  
Vol 339 ◽  
Author(s):  
W. A. Bryden ◽  
S. A. Ecelberger ◽  
M. E. Hawley ◽  
T. J. Kistenmacher
Keyword(s):  
Thin Films ◽  
Magnetron Sputtering ◽  
Electrical Transport ◽  
Electron Cyclotron Resonance ◽  
Reactive Magnetron Sputtering ◽  
Reactive Magnetron ◽  
Heteroepitaxial Growth ◽  
Structural Morphology ◽  
Apparent Reduction ◽  
Homogeneous Strain

ABSTRACTThe growth of high-quality thin films of the Group IIIA nitrides is exceedingly difficult given their propensity for nonstoichiometry and the lack of suitable substrates for either homoepitaxial or heteroepitaxial growth. A novel deposition technique, ultrahigh vacuum electron cyclotron resonance-assisted reactive magnetron sputtering, has been developed for the preparation of Group IIIA nitride thin films. Thus far, thin films of the semiconductor InN have been deposited on AlN-seeded (00.1) sapphire substrates, and the properties (structural, morphology, and electrical transport) of these films studied as a function of growth temperature. Comparison to InN thin films grown by conventional reactive magnetron sputtering shows enhanced Hall mobilities (from about 50 to over 100 cm2/V-sec), a decreased carrier concentration (by about a factor of 2–3), an increased optical bandgap, and an apparent reduction in homogeneous strain that is in part to be due to film relaxation induced by the ECR beam and in part to enhanced nitrogen content and more nearly stoichiometric films.

Quantifying Multiple Crystallite Orientations and Crystal Heterogeneities in Complex Thin Film Materials

2019 ◽  
Author(s):  
Jonathan Ogle ◽  
Daniel Powell ◽  
Eric Amerling ◽  
Detlef Matthias Smilgies ◽  
Luisa Whittaker-Brooks
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Structural Design ◽  
Grazing Incidence ◽  
Crystallite Orientation ◽  
Miller Index ◽  
X Ray ◽  
X Ray Scattering ◽  
Orientation Distributions ◽  
Orientation Information

<p>Thin film materials have become increasingly complex in morphological and structural design. When characterizing the structure of these films, a crucial field of study is the role that crystallite orientation plays in giving rise to unique electronic properties. It is therefore important to have a comparative tool for understanding differences in crystallite orientation within a thin film, and also the ability to compare the structural orientation between different thin films. Herein, we designed a new method dubbed the mosaicity factor (MF) to quantify crystallite orientation in thin films using grazing incidence wide-angle X-ray scattering (GIWAXS) patterns. This method for quantifying the orientation of thin films overcomes many limitations inherent in previous approaches such as noise sensitivity, the ability to compare orientation distributions along different axes, and the ability to quantify multiple crystallite orientations observed within the same Miller index. Following the presentation of MF, we proceed to discussing case studies to show the efficacy and range of application available for the use of MF. These studies show how using the MF approach yields quantitative orientation information for various materials assembled on a substrate.<b></b></p>

scholarly journals Reactive Dual Magnetron Sputtering: A Fast Method for Preparing Stoichiometric Microcrystalline ZnWO4 Thin Films

Surfaces ◽  
2021 ◽  
Vol 4 (2) ◽  
pp. 106-114
Author(s):  
Yannick Hermans ◽  
Faraz Mehmood ◽  
Kerstin Lakus-Wollny ◽  
Jan P. Hofmann ◽  
Thomas Mayer ◽  
...  
Keyword(s):  
Thin Films ◽  
Magnetron Sputtering ◽  
Photoelectron Spectroscopy ◽  
Fast Method ◽  
X Ray Diffraction ◽  
X Ray ◽  
Glass Substrates ◽  
Post Annealing ◽  
Rf Signal ◽  
First Time

Thin films of ZnWO4, a promising photocatalytic and scintillator material, were deposited for the first time using a reactive dual magnetron sputtering procedure. A ZnO target was operated using an RF signal, and a W target was operated using a DC signal. The power on the ZnO target was changed so that it would match the sputtering rate of the W target operated at 25 W. The effects of the process parameters were characterized using optical spectroscopy, X-ray diffraction, and scanning electron microscopy, including energy dispersive X-ray spectroscopy as well as X-ray photoelectron spectroscopy. It was found that stoichiometric microcrystalline ZnWO4 thin films could be obtained, by operating the ZnO target during the sputtering procedure at a power of 55 W and by post-annealing the resulting thin films for at least 10 h at 600 °C. As FTO coated glass substrates were used, annealing led as well to the incorporation of Na, resulting in n+ doped ZnWO4 thin films.

Evolution of Interfacial Roughness Correlations of Fe Au Films Grown on Mgo(001) Substrates

1996 ◽  
Vol 440 ◽  
Author(s):  
P. C. Chow ◽  
R. Paniago ◽  
R. Forrest ◽  
S. C. Moss ◽  
S. S. P. Parkin ◽  
...  
Keyword(s):  
Thin Films ◽  
Diffuse Scattering ◽  
Perfect Match ◽  
Grazing Incidence ◽  
Interface Roughness ◽  
Metallic Structures ◽  
X Ray ◽  
Dimensional Image ◽  
X Ray Scattering ◽  
Image Plate Detector

AbstractThe growth by sputtering of a series of thin films of Fe/Au on MgO(001) substrates was analyzed using Bragg and diffuse X-ray scattering. The Fe (bcc) layer grows rotated by 45° with respect to the MgO – Au(fcc) (001) epitaxial orientation, resulting in an almost perfect match between the two metallic structures. By collecting the X-ray diffuse scattering under grazing incidence using a 2-dimensional image plate detector, we mapped the reciprocal space of these films. We characterized the correlated interface roughness starting with a buffer of Fe in which only three interfaces are present. The propagation of the roughness was subsequently characterized for Fe/Au multilayers with 40 and 100 bilayers. We observe an enlargement of the surface features as a function of time, evidenced by the longer lateral cutoff length measured for thicker films.

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