Hydrogen Radical Annealing Effect on the Growth of Microcrystalline Silicon

1993 ◽  
Vol 298 ◽  
Author(s):  
Jung Mok Jun ◽  
Kyu Chang Park ◽  
Sung Ki Kim ◽  
Kyung Ha Lee ◽  
Mi Kyung Chu ◽  
...  
Keyword(s):  
Etch Rate ◽  
Hydrogen Plasma ◽  
Annealing Effect ◽  
Layer By Layer ◽  
Deposition Technique ◽  
Microcrystalline Silicon ◽  
Plasma Exposure ◽  
Layer Deposition ◽  
Hydrogen Radical ◽  
Etching Effect

AbstractWe have studied the growth of microcrystalline silicon (μc-Si) and amorphous silicon (a-Si:H) by layer by layer deposition technique, where the deposition and the radical exposure are done alternatively. He or hydrogen plasma exposure gives rise to the etching effect of both μc-Si and a-Si:H even though the etch rate by He plasma is much smaller. The long exposure of hydrogen radical on a-Si:H gives rise to the formation of μc-Si at low substrate temperature (Ts), whereas the hydrogen content decreases at high Ts. The growth mechanism of the crystallite is proposed on the basis of experimental results.

Growth of high quality microcrystalline silicon by layer-by-layer deposition technique

1994 ◽  
Vol 34 (1-4) ◽  
pp. 509-515 ◽  
Author(s):  
Kyu Chang Park ◽  
Sung Ki Kim ◽  
Min Park ◽  
Jung Mok Jun ◽  
Kyung Ha Lee ◽  
...  
Keyword(s):  
Layer By Layer ◽  
Deposition Technique ◽  
Microcrystalline Silicon ◽  
High Quality ◽  
Layer Deposition

Role of the hydrogen plasma treatment in layer-by-layer deposition of microcrystalline silicon

1997 ◽  
Vol 71 (23) ◽  
pp. 3403-3405 ◽  
Author(s):  
K. Saitoh ◽  
M. Kondo ◽  
M. Fukawa ◽  
T. Nishimiya ◽  
A. Matsuda ◽  
...  
Keyword(s):  
Plasma Treatment ◽  
Hydrogen Plasma ◽  
Layer By Layer ◽  
Microcrystalline Silicon ◽  
Layer Deposition

Effects of Hydrogen Radical Annealing on Electrical Properties of Amorphous Silicon

1991 ◽  
Vol 219 ◽  
Author(s):  
Jin Jang ◽  
Tae Gon Kim ◽  
Song Ok Koh ◽  
Hyon Kyun Song ◽  
Kyu Chang Park ◽  
...  
Keyword(s):  
Optical Properties ◽  
Electrical Properties ◽  
Layer Thickness ◽  
Thin Layers ◽  
Layer By Layer ◽  
Deposition Technique ◽  
Electrical And Optical Properties ◽  
Layer Deposition ◽  
Hydrogen Radical ◽  
Hydrogen Radicals

ABSTRACTWe studied the layer by layer deposition technique of a-Si:H film, where the hydrogen radicals are exposed between the deposition of each layer. The effects of each layer thickness and hydrogen radical exposure time on the electrical and optical properties were studied. With the decrease of the each layer thickness, more hydrogen is involved in the network if the structure is still amorphous, but the hydrogen content is very small for microcrystal Si formed by long exposure to hydrogen radicals in between the depositions of thin layers.

High Temperature n- and p-type Doped Microcrystalline Silicon Layers Grown by VHF PECVD Layer-by-Layer Deposition

2003 ◽  
Vol 762 ◽  
Author(s):  
A. Gordijn ◽  
J.K. Rath ◽  
R.E.I. Schropp
Keyword(s):  
Activation Energy ◽  
High Temperature ◽  
High Temperatures ◽  
Continuous Wave ◽  
Hydrogen Plasma ◽  
Silicon Layer ◽  
Dark Conductivity ◽  
High Deposition Rate ◽  
Layer By Layer ◽  
Microcrystalline Silicon

AbstractDue to the high temperatures used for high deposition rate microcrystalline (μc-Si:H) and polycrystalline silicon, there is a need for compact and temperature-stable doped layers. In this study we report on films grown by the layer-by-layer method (LbL) using VHF PECVD. Growth of an amorphous silicon layer is alternated by a hydrogen plasma treatment. In LbL, the surface reactions are separated time-wise from the nucleation in the bulk. We observed that it is possible to incorporate dopant atoms in the layer, without disturbing the nucleation. Even at high substrate temperatures (up to 400°C) doped layers can be made microcrystalline. At these temperatures, in the continuous wave case, crystallinity is hindered, which is generally attributed to the out-diffusion of hydrogen from the surface and the presence of impurities (dopants).We observe that the parameter window for the treatment time for p-layers is smaller compared to n-layers. Moreover we observe that for high temperatures, the nucleation of p-layers is more adversely affected than for n-layers. Thin, doped layers have been structurally, optically and electrically characterized. The best n-layer made at 400°C, with a thickness of only 31 nm, had an activation energy of 0.056 eV and a dark conductivity of 2.7 S/cm, while the best p-layer made at 350°C, with a thickness of 29 nm, had an activation energy of 0.11 V and a dark conductivity of 0.1 S/cm. The suitability of these high temperature n-layers has been demonstrated in an n-i-p microcrystalline silicon solar cell with an unoptimized μc-Si:H i-layer deposited at 250°C and without buffer. The Voc of the cell is 0.48 V and the fill factor is 70 %.

Tannic acid anchored layer-by-layer covalent deposition of parasin I peptide for antifouling and antimicrobial coatings

RSC Advances ◽  
2016 ◽  
Vol 6 (18) ◽  
pp. 14809-14818 ◽  
Author(s):  
Gang Xu ◽  
Dicky Pranantyo ◽  
Bin Zhang ◽  
Liqun Xu ◽  
Koon-Gee Neoh ◽  
...  
Keyword(s):  
Stainless Steel ◽  
Schiff Base ◽  
Tannic Acid ◽  
Michael Addition ◽  
Steel Surface ◽  
Stainless Steel Surface ◽  
Layer By Layer ◽  
Deposition Technique ◽  
Antimicrobial Coatings ◽  
Layer Deposition

Tannic acid and parasin I were deposited alternatively on stainless steel surface by Michael addition/Schiff base reaction-enabled layer-by-layer deposition technique.

Microcrystalline Silicon Growth: Deposition Rate Limiting Factors

1998 ◽  
Vol 507 ◽  
Author(s):  
S. Hamma ◽  
D. Colliquet ◽  
P. Rocai Cabarrocas
Keyword(s):  
Deposition Rate ◽  
Hydrogen Plasma ◽  
Limiting Factors ◽  
Layer By Layer ◽  
Microcrystalline Silicon ◽  
Glass Substrates ◽  
Hydrogen Dilution ◽  
Corning Glass ◽  
Silicon Growth

ABSTRACTMicrocrystalline silicon films were deposited on corning glass substrates both by the standard hydrogen dilution and the layer-by-layer (LBL) technique. In-situ UV-visible spectroscopic ellipsometry measurements were performed to analyze the evolution of the composition of the films.The change of the hydrogen plasma conditions by increasing the pressure in the LBL process leads to a faster kinetic of crystallization and to an increase of the deposition rate by a factor of two. The increase of the pressure and the decrease of the inter-electrode distance allowed to increase the deposition rate from 0.26 to 3 Å/s in the hydrogen dilution technique. Interestingly enough, the crystalline fraction of the films remains higher than 50%. However, as the deposition rate increases the growth process results in a slower kinetic of crystallization with a long range evolution of the film composition (up to 0.5 νm).

Design of microparticles of chia seed oil by using the electrostatic layer-by-layer deposition technique

2019 ◽  
Vol 345 ◽  
pp. 750-757 ◽  
Author(s):  
Luciana M. Julio ◽  
Claudia N. Copado ◽  
Rosana Crespo ◽  
Bernd W.K. Diehl ◽  
Vanesa Y. Ixtaina ◽  
...  
Keyword(s):  
Seed Oil ◽  
Layer By Layer ◽  
Deposition Technique ◽  
Layer Deposition ◽  
Chia Seed ◽  
Chia Seed Oil

Optical sensing quantum dot-labeled polyacrolein particles prepared by layer-by-layer deposition technique

2011 ◽  
Vol 357 (2) ◽  
pp. 265-272 ◽  
Author(s):  
Alla N. Generalova ◽  
Vladimir A. Oleinikov ◽  
Margarita M. Zarifullina ◽  
Ekaterina V. Lankina ◽  
Svetlana V. Sizova ◽  
...  
Keyword(s):  
Quantum Dot ◽  
Optical Sensing ◽  
Layer By Layer ◽  
Deposition Technique ◽  
Layer Deposition

Understanding of Growth Mechanism and Structure of Multilayer Thin Films via Layer-by-Layer Hydrogen Bonded Assembly from Polymer Brushes-Grafted Surface

2020 ◽  
Vol 12 (7) ◽  
pp. 890-900
Author(s):  
Hua Wei ◽  
Hua Zhang ◽  
Yang Zhou ◽  
Zongbao Wang ◽  
Rong Wang ◽  
...  
Keyword(s):  
Thin Films ◽  
Atom Transfer Radical Polymerization ◽  
Growth Mechanism ◽  
Polymer Brushes ◽  
Multilayer Films ◽  
Multilayer Thin Films ◽  
Layer By Layer ◽  
Deposition Technique ◽  
Layer Deposition ◽  
Hydrogen Bonded

This study demonstrated the feasibility of polymer brushes-modified plate substrate as template to construct multilayer thin films via layer-by-layer hydrogen bonded assembly. The anchored chains via controlled surface-initiated atom transfer radical polymerization (SI-ATRP). The anchored poly(4-vinylpyridine) brushes functions as a multivalent H-acceptor to regulate the following hydrogen bonded assembly with H-donors to construct multilayer thin films via layer-by-layer deposition technique. The growth mechanism and film natures of multilayer films mediated by hydrogen bonded assembly from a polymer brushes-grafted surface were fully investigated.

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