The EFfects of Elemental Sequence and Pairing on Interdiffusion and Phase Formation of Al-Ge-Ni Ohmic Contacts for (001) GaAs

1993 ◽  
Vol 300 ◽  
Author(s):  
W. V. Lampert ◽  
T. W. Haas ◽  
Paul H. Holloway
Keyword(s):  
Thin Film ◽  
Phase Formation ◽  
Thermal Processing ◽  
Ohmic Contacts ◽  
Treatment Time ◽  
X Ray Diffraction ◽  
X Ray ◽  
Ohmic Behavior ◽  
Contact Metallization ◽  
Time Required

ABSTRACTThe growth sequence of Al, Ge, and Ni metals has been shown to dramatically affect the amount of heat treatment time required to convert the ohmic contact metallization from Schottky to ohmic behavior. Interpretation of interdiffusion and phase formation of the Al-Ge, Al-Ni, or Ni-Ge thin film couples were measured. Auger depth profiles and thin film X-ray diffraction were used to determine interdiffusion and phase formation resulting from various types of thermal processing. The effects of interdiffusion and formation of phases such as Ni-Ga, Ni-As, Ni-Ga-Ge, and Ni-As-Ge from the two element metallizations on GaAs will be used to explain the origin of ohmic behavior for the ternary Al-Ge-Ni contacts to GaAs.

The Effects of Growth Sequence on the Electronic Properties of Al-Ge-Ni Ohmic Contacts on (001) GaAs

1992 ◽  
Vol 281 ◽  
Author(s):  
W. V. Lampert ◽  
T. W. Haas ◽  
E. S. Lambers ◽  
Paul H. Holloway
Keyword(s):  
Heat Treatment ◽  
Phase Formation ◽  
Ohmic Contacts ◽  
Treatment Time ◽  
Contact Layer ◽  
Treatment Temperature ◽  
X Ray Diffraction ◽  
Growth Sequence ◽  
Ohmic Behavior ◽  
Time Required

ABSTRACTThe growth sequence of Al, Ge, and Ni metals was shown to dramatically affect the amount of heat treatment time required to convert the electrical properties from Schottky to ohmic behavior. Differences in the heat treatment times required to convert from rectifying to ohmic contact were dependent on the doping concentration of the contact layer and on the heat treatment temperature. Interdiffusion of component elements and phase formation have been studied to determine the origin of these effects. Auger depth profiles and X-ray diffraction have been used to determine the interdiffusion and phase formation resulting from various types of thermal processing. Elemental profiles and identification of phases of Ni-Ga, Ni-As, and Ni-Ga-Ge will be used to explain the origin of ohmic behavior.

Phase Formation in Ti-Al-N MAX-Phase Contacts to GaN

2009 ◽  
Vol 615-617 ◽  
pp. 947-950 ◽  
Author(s):  
Michał A. Borysiewicz ◽  
Eliana Kamińska ◽  
Anna Piotrowska ◽  
Iwona Pasternak ◽  
Rafał Jakieła ◽  
...  
Keyword(s):  
Thin Film ◽  
Mass Spectrometry ◽  
Phase Formation ◽  
Ohmic Contacts ◽  
Secondary Ion Mass Spectrometry ◽  
Max Phase ◽  
X Ray Diffraction ◽  
Max Phases ◽  
X Ray ◽  
Secondary Ion

Presented are the results of studies on Ti-Al-N MAX phase formation in thin film multilayers of Ti, Al and TiN deposited on n-type GaN by magnetron sputtering. Two approaches to phase formation are shown, annealing Ti-Al-TiN multilayers at 600oC in argon and annealing Ti/Al multilayers at 600oC in nitrogen. Samples are characterized by means of High Resolution X-Ray Diffraction and Secondary Ion Mass Spectrometry profiling. As MAX phases are very stable at high temperatures the potential of their application as ohmic contacts to n-GaN devices is discussed.

Phase Formation at Rapid Thermal Annealing of Nickel Contacts on C-Face n-Type 4H-SiC

2005 ◽  
Vol 483-485 ◽  
pp. 733-736 ◽  
Author(s):  
Sergio Ferrero ◽  
A. Albonico ◽  
Umberto M. Meotto ◽  
G. Rambolà ◽  
Samuele Porro ◽  
...  
Keyword(s):  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Ohmic Contacts ◽  
Structural Evolution ◽  
Auger Spectroscopy ◽  
X Ray Diffraction ◽  
Electrical Measurements ◽  
X Ray ◽  
Ohmic Behavior ◽  
Semiconductor Interfaces

In this work we report an analysis on Ni/4H-SiC interfaces aimed at optimizing the ohmic contacts. Several thermal cycles have been performed by rapid thermal annealing checking the possible chemical reactions at the metal semiconductor interfaces. Micro x-ray diffraction and micro Raman techniques have been performed in order to study the interface micro structural evolution. Inter diffusion of each element at the Ni - SiC interface was examined using Auger spectroscopy. Electrical measurements have been performed in order to check the ohmic behavior of the contacts. Finally, a correlation between microstructures evolution and electrical behaviors is reported.

Interfacial Reactions between In/Pd and GaAs

1991 ◽  
Vol 230 ◽  
Author(s):  
Z. Ma ◽  
L. H. Allen ◽  
B. Blanpain ◽  
Q. Z. Hong ◽  
J. W. Mayer ◽  
...  
Keyword(s):  
Contact Resistance ◽  
Ohmic Contacts ◽  
Annealing Temperature ◽  
Interfacial Microstructure ◽  
Limiting Factor ◽  
X Ray Diffraction ◽  
X Ray ◽  
Ohmic Behavior ◽  
Sims Analysis ◽  
Secondary Ion

AbstractInterfacial microstructure of In/Pd ohmic contacts to n-GaAs was studied by various X-ray diffraction techniques and secondary ion mass spectroscopy (SIMS). Analysis of this interface after various annealing showed that In1-xGaxAs compounds are formed at the interface and the composition of these compounds depends upon the annealing temperature. As the temperature increases, the stoichiometry of the Inrich compounds tends toward higher concentrations of Ga. The low contact resistance is achieved by dividing the Schottky barrier between metal and GaAs into two barriers due to metal/Inl-xGaxAs and In1-xGaxAs/GaAs. The barrier due to In1-xGaxAs/GaAs is believed to be the main limiting factor in lowering of contact resistance. The observed ohmic behavior for sample annealed at 500°C for 20 s is attributed to the further reduction of this barrier.

Thin-film compound phase formation at Fe–Ge and Cr–Ge interfaces

2003 ◽  
Vol 18 (8) ◽  
pp. 1900-1907 ◽  
Author(s):  
O. M. Ndwandwe ◽  
C. C. Theron ◽  
T. K. Marais ◽  
R. Pretorius
Keyword(s):  
Thin Film ◽  
Phase Formation ◽  
Rutherford Backscattering Spectrometry ◽  
Heat Of Formation ◽  
Miedema Model ◽  
Formation Model ◽  
X Ray Diffraction ◽  
X Ray ◽  
Effective Heat Of Formation ◽  
Transformation Enthalpy

Phase formation was studied in the Fe–Ge and Cr–Ge thin-film systems by means of Rutherford backscattering spectrometry and x-ray diffraction. In the Fe–Ge system, FeGe was the first phase to form while in the Cr–Ge system, Cr11Ge8 was found to form first. The results are compared with the predictions of the effective heat of formation model. Heats of formation were calculated using the Miedema model. The effect of the transformation enthalpy term ΔHtr, used to convert a semiconducting element into a hypothetical metallic one in the Miedema model, is also discussed.

Annealing Characteristics of Electron Beam Evaporated Magnesium Oxide Thin Film

1997 ◽  
Vol 471 ◽  
Author(s):  
Y. C. Kang ◽  
J. B. Baik ◽  
B. H. Lee ◽  
J. H. Choi ◽  
J. M. Kim ◽  
...  
Keyword(s):  
Thin Film ◽  
Electron Beam ◽  
Treatment Time ◽  
Diffraction Method ◽  
Life Time ◽  
Oxide Thin Film ◽  
X Ray Diffraction ◽  
Boundary Area ◽  
X Ray ◽  
Electron Microscopes

ABSTRACTThe effect of the annealing characteristics of MgO thin film, which is used as a protecting layer and known to play an important role to life time and lower the firing voltage in AC plasma displays, was investigated experimentally. MgO films were deposited on glass substrates by an electron beam evaporation method and annealed at different temperatures with varying heat treatment time. The characteristics of the crystallization and surface morphology of MgO films were changed by various annealing conditions, confirmed with X-ray diffraction method and scanning and transmission electron microscopes (SEM & TEM). With increasing annealing time and higher temperature, the intensity of the X-ray diffraction peak and the crystalline grain size of MgO increases. With the change of crystallinity and the decrease in grain boundary area, it is considered that the characteristics of firing voltage and life time of the plasma display panel can be improved with appropriate annealing process.

scholarly journals Enhancement of electrical properties of Al-doped ZnO thin films (AZO) by hydrogene plasma treatment

2013 ◽  
Vol 16 (4) ◽  
pp. 5-12
Author(s):  
Phuong Hoai Pham ◽  
Trung Kien Pham ◽  
Trung Quang Tran
Keyword(s):  
Thin Film ◽  
Plasma Treatment ◽  
Treatment Time ◽  
Structural Characteristics ◽  
Hydrogen Plasma ◽  
Wave Length ◽  
X Ray Diffraction ◽  
Electrical Stability ◽  
X Ray ◽  
Doped Zno

Transparent and conductive Al-doped ZnO (AZO) films were prepared by magnetron sputtering at temperature 200oC onto glass substrate. The films were treated with hydrogen plasma at temperatures 200oC from 30 to 60 minutes with 200 mW/cm2 power plasma. The optical, electrical and structural characteristics of the AZO coatings were analyzed as a function of the treatment time by spectrophotometry,Hall effects measurements, and X-ray diffraction. Results of X-ray diffraction analysis showed that the structure of the plasma-treated film did not change compared to that of the asdeposited film. The electrical resistivity of the AZO films decreased after H2 plasma treatment. The plasma treatment not only significantly decreased film resistivity but enhanced electrical stability as aging in air ambient. The average optical transmittance in the wave length range of 300 to 700 nm was 85%. These results were significant in application of AZO thin film as transparent electrode for a-Si:H based thin film solar cell prepared by PE-CVD method in next step.

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