Phase Formation in Ti-Al-N MAX-Phase Contacts to GaN

2009 ◽  
Vol 615-617 ◽  
pp. 947-950 ◽  
Author(s):  
Michał A. Borysiewicz ◽  
Eliana Kamińska ◽  
Anna Piotrowska ◽  
Iwona Pasternak ◽  
Rafał Jakieła ◽  
...  
Keyword(s):  
Thin Film ◽  
Mass Spectrometry ◽  
Phase Formation ◽  
Ohmic Contacts ◽  
Secondary Ion Mass Spectrometry ◽  
Max Phase ◽  
X Ray Diffraction ◽  
Max Phases ◽  
X Ray ◽  
Secondary Ion

Presented are the results of studies on Ti-Al-N MAX phase formation in thin film multilayers of Ti, Al and TiN deposited on n-type GaN by magnetron sputtering. Two approaches to phase formation are shown, annealing Ti-Al-TiN multilayers at 600oC in argon and annealing Ti/Al multilayers at 600oC in nitrogen. Samples are characterized by means of High Resolution X-Ray Diffraction and Secondary Ion Mass Spectrometry profiling. As MAX phases are very stable at high temperatures the potential of their application as ohmic contacts to n-GaN devices is discussed.

Strain-Induced Diffusion in Heteroepitaxially Grown CuInSe2 on GaAs Substrates

1995 ◽  
Vol 399 ◽  
Author(s):  
P. Fons ◽  
S. Niki ◽  
A. Yamada ◽  
A. Okada ◽  
D.J. Tweet
Keyword(s):  
Thin Film ◽  
Secondary Ion Mass Spectrometry ◽  
Second Phase ◽  
X Ray Diffraction ◽  
X Ray ◽  
State Of Stress ◽  
Gaas Substrates ◽  
Transmission Electron ◽  
Secondary Ion ◽  
Lattice Matched

ABSTRACTA series of CuInSe2 thin films of varying thicknesses were grown on both GaAs(001) substrates and nominally lattice-matched In0.29Ga0.71As (001) linearly graded buffers by MBE at 450°C. Transmission electron microscopy and high resolution x-ray diffraction measurements revealed the presence of a second phase with chalcopyrite symmetry strained to the CuInSe2 thin film in-plane lattice constant for CuInSe2 films grown on GaAs substrates. Further examination confirmed that the second phase possessed chalcopyrite symmetry. No second phase was observed in films grown on nearly lattice-matched In0.29Ga0.71As (001) linearly graded buffers. Secondary ion mass spectrometry confirmed the presence of interdiffusion from of Ga from the substrate into the CuInSe2layer. It is speculated that this diffusion is related to the state of stress due to heteroepitaxial misfit.

Low thermal budget epitaxial lift off (ELO) for Ge (111)-on-insulator structure

2021 ◽  
Author(s):  
Wen-Hsin Chang ◽  
Hsien-Wen Wan ◽  
Yi-Ting Cheng ◽  
Yen-Hsun Glen Lin ◽  
Toshifumi IRISAWA ◽  
...  
Keyword(s):  
Mass Spectrometry ◽  
Secondary Ion Mass Spectrometry ◽  
X Ray Diffraction ◽  
Thermal Budget ◽  
X Ray ◽  
Transmission Electron ◽  
Lift Off ◽  
Low Thermal Budget ◽  
3D Applications ◽  
Secondary Ion

Abstract Germanium-on-Insulator (GeOI) structures with the surface orientation of (111) have been successfully fabricated by using low thermal budget epitaxial-lift-off (ELO) technology via direct bonding and selective etching. The material characteristics and transport properties of the Ge(111)OI structure have been systematically investigated through secondary-ion mass spectrometry, Raman spectroscopy, X-ray diffraction, high-resolution transmission electron microscope, and Hall measurement. The transferred Ge (111) layer remained almost intact from the as-grown epitaxial layers, indicating the benefits of ELO technology. The low thermal budget ELO technology demonstrated in this work is promising to integrate Ge channels with different surface orientations on Si (100) substrates for future monolithic 3D applications.

Buried SiC Layers in (100) Bulk Silicon and Silicon-on-Sapphire Produced by Carbon Ion Implantation

1985 ◽  
Vol 45 ◽  
Author(s):  
L. Kroko ◽  
I. Golecki ◽  
H.L. GLASS
Keyword(s):  
Mass Spectrometry ◽  
Ion Implantation ◽  
Secondary Ion Mass Spectrometry ◽  
Bulk Silicon ◽  
X Ray Diffraction ◽  
X Ray ◽  
Infra Red ◽  
Buried Layers ◽  
Secondary Ion ◽  
Crystal Bulk

ABSTRACTWe demonstrate the formation of buried layers of SiC in (100) single-crystal bulk Si and silicon-on-sapphire by ion implantation of 125-180 keV, (0.56-1.00)×1018 C/cm2 at 30-40 μA/cm2 into samples held at 450-650¼C. The as-implanted and 950°C annealed samples are characterized by differential infra-red absorbance and reflectance, Rutherford backscattering and channeling spectrometry, X-ray diffraction, four-point probe, Dektak profilometry, I-V measurements, spreading resistance and secondary ion mass spectrometry.

scholarly journals Characterization and Structure–Property Relationships of Organic–Inorganic Hybrid Composites Based on Aluminum–Magnesium Hydroxycarbonate and Azo Chromophore

Molecules ◽  
2019 ◽  
Vol 24 (5) ◽  
pp. 880 ◽  
Author(s):  
Anna Marzec ◽  
Bolesław Szadkowski ◽  
Jacek Rogowski ◽  
Waldemar Maniukiewicz ◽  
Marian Zaborski
Keyword(s):  
Mass Spectrometry ◽  
Azo Dye ◽  
Secondary Ion Mass Spectrometry ◽  
Hybrid Composites ◽  
Structure Property ◽  
X Ray Diffraction ◽  
X Ray ◽  
Tof Sims ◽  
Ion Mass Spectrometry ◽  
Secondary Ion

In this study, novel organic–inorganic composites were prepared by the complexation of dicarboxylic azo dye (AD) with aluminum–magnesium hydroxycarbonate (AlMg–LH). This procedure provides an effective method for the stabilization of dicarboxylic organic chromophores on an AlMg−LH host. The structures of the hybrid composites were examined by X-ray diffraction (XRD), secondary ion mass spectrometry (TOF-SIMS), 27-Al solid-state nuclear magnetic resonance (NMR) spectroscopy, thermogravimetric analysis (TGA) and scanning transmission electron microscopy (STEM). The TOF-SIMS method was applied to investigate the metal–dye interactions and to monitor the thermal stability of the organic–inorganic complexes. Secondary ion mass spectrometry confirmed the presence of a characteristic peak for C18H10O5N2Mg22+, indicating that both carboxylic groups interacted with AlMg−LH by forming complexes with two Mg2+ ions. Modification with hybrid pigments affected the crystal structure of the AlMg−LH mineral, as shown by the appearance of new peaks on the X-ray diffraction patterns. Adsorption of the dicarboxylic chromophore not only led to significantly enhanced solvent resistance but also improved the thermal and photostability of the hybrid pigments. We propose a possible arrangement of the azo dye in the inorganic matrix, as well as the presumed mechanism of stabilization.

Sign in / Sign up

Export Citation Format

Share Document