Interfacial Reactions of Nickel films on GaAs
Keyword(s):
X Ray
◽
ABSTRACTTransmission electron microscopy (TEM) and X-ray diffraction (XRD) were performed to study the interfacial reactions of Ni/GaAs contact system as a result of isothermal annealing and two step annealing. Ni2GaAs was observed to exhibit preferred orientation relationships with respect to GaAs substrate after 300–350°C annealing. The compound decomposed to NiAs and Ga-compounds after 400°C annealing. NiAs was also found to grow preferentially on GaAs. The step annealing was found to be ineffective in varying the morphological structure of interface.
2016 ◽
Vol 49
(5)
◽
pp. 1818-1826
◽
1982 ◽
Vol 40
◽
pp. 722-723
◽
2012 ◽
Vol 23
(8)
◽
pp. 1047-1063
◽
2012 ◽
Vol 174-177
◽
pp. 508-511