Modifications in the Course of Reaction Between Co and GaAs Due To The Presence of a Ge Film
Keyword(s):
X Ray
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ABSTRACTModifications in the course of reaction between Co thin films and single crystal GaAs substrate due to the addition of a Ge film either on top or below the metal layer have been studied. The microstructure and phase formation for the systems: Co/GaAs, Co/Ge/GaAs, and Ge/Co/GaAs have been studied by Auger electron spectroscopy, transmission electron microscopy and X-ray diffraction.
2000 ◽
Vol 18
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pp. 440
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1995 ◽
Vol 10
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pp. 1790-1794
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1982 ◽
Vol 40
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pp. 722-723
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