The Effect of Si, F Implantation on the Formation and Light Emitting Properties of Porous Silicon

1993 ◽  
Vol 316 ◽  
Author(s):  
Lianwei Wang ◽  
Chenglu Lin ◽  
Ping Liu ◽  
Zuyao Zhou ◽  
Shichang Zou
Keyword(s):  
Porous Silicon ◽  
Ion Implantation ◽  
Porous Structure ◽  
Formation Mechanism ◽  
Point Defects ◽  
Electrochemical Etching ◽  
Amorphous Layer ◽  
Silicon Wafers ◽  
Porosity Distribution ◽  
Light Emitting

Abstract:The effect of ion implantation on the formation and light emitting properties of porous silicon is reported. Si + , F+ ions were implanted into silicon wafers before electrochemical etching process. The experiments showed that porous structure can be formed on the wafer containing amorphous layer, while the porosity distribution with the depth changed greatly compared with the anodized crystalline Si. The implantation of F+ ions greatly affects the formation mechanism. The creation of point defects leads to red-shift in photoluminescence measurements.

Formation Mechanism and Pore Size Control of Light-Emitting Porous Silicon

1994 ◽  
Vol 33 (Part 1, No. 12A) ◽  
pp. 6425-6431 ◽  
Author(s):  
Young Hun Seo ◽  
Kee Suk Nahm ◽  
Myung Hwan An ◽  
Eun-Kyung Suh ◽  
Young Hee Lee ◽  
...  
Keyword(s):  
Porous Silicon ◽  
Pore Size ◽  
Formation Mechanism ◽  
Size Control ◽  
Light Emitting ◽  
Pore Size Control

Visible Electroluminescence from Al-Porous Silicon Reverse Bias Diodes Formed on the Base of Degenerate N-Type Silicon

1994 ◽  
Vol 358 ◽  
Author(s):  
S. Lazarouk ◽  
V. Bondarenko ◽  
P. Pershukevich ◽  
S. La Monica ◽  
G. Maiello ◽  
...  
Keyword(s):  
Porous Silicon ◽  
Reverse Bias ◽  
Light Emission ◽  
Electrochemical Etching ◽  
Forward Bias ◽  
Applied Bias ◽  
Light Emitting ◽  
Type Silicon ◽  
Silicon Devices ◽  
Preparation Conditions

ABSTRACTWe demonstrate current induced visible light emission from Schottky junctions between aluminium electrodes and porous silicon formed by electrochemical etching of degenerate n+ -type silicon. HF concentration and anodizing current were chosen to yield preparation conditions in the transition region between electropolishing and porous silicon formation regimes. The light emitting diodes were formed by magnetron sputtering of aluminum on the porous silicon surface. Visible electroluminescence (EL) was recorded when dc or ac voltages larger than 4 V were applied between the aluminium electrodes. The visible EL appears in the dark, at the edge of the electrodes at a reverse bias of 5-6 V. The intensity of emitted light increases with applied voltage; at applied bias higher than 7 V the light emitted was observable by the naked eye at normal daylight. Compared to forward bias solid state contact porous silicon devices, the structure has an increased stability (after 100 hours of continuous operation under a 7 V reverse bias, no appreciable modification was observed in emission intensity). The main features of this electroluminescence are very similar to the ones observed under avalanche breakdown of silicon p-n junctions.

Light-Emitting Porous Silicon After Standard Microelectronic Processing

1993 ◽  
Vol 298 ◽  
Author(s):  
C. Peng ◽  
L. Tsybeskov ◽  
P.M. Fauchet ◽  
F. Seiferth ◽  
S.K. Kurinec ◽  
...  
Keyword(s):  
Porous Silicon ◽  
Ion Implantation ◽  
Reactive Ion Etching ◽  
Chemical Oxidation ◽  
Ion Etching ◽  
Light Emitting ◽  
And Shifts ◽  
Microelectronic Processing ◽  
Physical And Chemical ◽  
Processing Steps

AbstractWe have investigated the properties of light-emitting porous silicon (LEpSi) after standard microelectronic processing steps such as annealing, thermal and chemical oxidation, ion implantation, and reactive ion etching. The nature of the physical and chemical changes induced by these processing steps is studied. After thermal or chemical oxidation, the photoluminescence (PL) from LEpSi is blue shifted and more stable. Low dose dopant implantation essentially keeps the PL spectrum unchanged. Thermal annealing after ion implantation affects the PL intensity differently, depending on the type of ions. Reactive ion etching changes the surface morphology and shifts the PL peak to blue.

Improved Photoluminescence from Ar+ and N+ Ions Co-Implanted Porous Silicon

2010 ◽  
Vol 150-151 ◽  
pp. 992-995
Author(s):  
Xiao Yi Lv ◽  
Jia Qing Mo ◽  
Fu Ru Zhong ◽  
Zhen Hong Jia ◽  
Mei Xiang ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Scanning Electron Microscopy ◽  
Porous Silicon ◽  
Ion Implantation ◽  
Porous Structure ◽  
Single Crystal Silicon ◽  
Photoluminescence Intensity ◽  
Crystal Silicon ◽  
Different Doses ◽  
Scanning Electron

We have measured photoluminescence of porous silicon which is electrochemically prepared on single crystal silicon wafer with co-implantation of Ar+ and N+ ions. The results show that the photoluminescence intensity of porous structure of co-implanted silicon was enhanced that we attribute these to the enhanced formation of porous silicon microstructure induced by ion implantation and from the analysis by scanning electron microscopy, it is demonstrated that the different density of the pores with different doses ion implantation

scholarly journals SPECTRAL INVESTIGATIONS OF NANOCOMPOSITES ON THE BASIS OF POROUS SILICON

2017 ◽  
Vol 19 (3) ◽  
pp. 75-84
Author(s):  
E.V. Berlova ◽  
V.A. Zhukova ◽  
N.V. Latukhina ◽  
G.A. Pisarenko
Keyword(s):  
Porous Silicon ◽  
Electrochemical Etching ◽  
Experimental Studies ◽  
Biological Materials ◽  
Silicon Wafers ◽  
Tear Fluid ◽  
Reflection Spectra ◽  
Mineral Phase ◽  
Ir Reflection ◽  
Ir Reflection Spectra

The results of experimental studies of porous silicon nanocomposites with biological materials: powder mineral phase of bone (hydroxyapatite) and biochemical solution identical to the natural tear fluid are presented in the work. Layers of porous silicon have been obtained in the process of electrochemical etching silicon wafers. There have been studies of IR reflection spectra of samples of nanocomposites in the range 4000-550 cm-1 produced.

POROUS SILICON: INFLUENCE OF ETCHING TEMPERATURE ON MICROSTRUCTURE AND LUMINESCENCE

2001 ◽  
Vol 08 (05) ◽  
pp. 429-433 ◽  
Author(s):  
D. J. BLACKWOOD ◽  
Y. ZHANG
Keyword(s):  
Porous Silicon ◽  
Light Source ◽  
Hydrofluoric Acid ◽  
Uv Light ◽  
Electrochemical Etching ◽  
Light Emitting ◽  
Influence Of Temperature ◽  
Etching Solution ◽  
Experimental Parameters

Electrochemical etching in solutions based on hydrofluoric acid has been widely used to form light-emitting porous silicon. However, the effects of a number of the experimental parameters on the quality of the porous silicon produced have yet to be fully investigated. In the present paper the influence of temperature and viscosity of the etching solution is evaluated in terms of the morphology and porosity of the porous silicon produced as well as the wavelength of the photoluminescence or electroluminescence subsequently emitted. It was found that under stimulation from a UV light source the wavelength of the photoluminescence emitted from the porous silicon films blueshifted with decreasing etching temperature. SEM and AFM investigations revealed that this blueshifting of the photoluminescence resulted from the production of smaller nanocrystals at the lower etching temperatures.

Ion implantation of silicon wafers for defect-reduced doped layer formation with low dopant atom diffusion

1994 ◽  
Vol 9 (11) ◽  
pp. 2987-2992
Author(s):  
Naoto Shigenaka ◽  
Shigeki Ono ◽  
Tsuneyuki Hashimoto ◽  
Motomasa Fuse ◽  
Nobuo Owada
Keyword(s):  
Ion Implantation ◽  
Amorphous Phase ◽  
Amorphous Layer ◽  
Defect Layer ◽  
Silicon Wafers ◽  
Dopant Atom ◽  
Layer Formation ◽  
Atom Diffusion ◽  
Enhanced Diffusion ◽  
Dopant Atoms

A new process for ion implantation into silicon wafers was proposed. This process has an additional implantation step to form an amorphous phase. At first self-ions are implanted into a cooled wafer (< −30 °C) to form the amorphous phase, and subsequently dopant atoms are implanted to form a doped layer within the amorphous layer. After annealing above 650 °C, the silicon wafer is completely recrystallized, and no defects with sizes detectable by TEM are present near the doped layer. There is indeed a defect layer in the wafer; however, it lies along the amorphous/crystal interface that is behind the doped layer. The concentration profile of the dopant atoms is not changed during epitaxial recrystallization, and further dopant atom diffusion during annealing is limited to about 0.05 μm, because defect-enhanced diffusion does not occur. The double implantation method is considered to be effective for doped layer formation in the VLSI fabrication process.

Sign in / Sign up

Export Citation Format

Share Document