Optical Emission End-Point Detection for Via Hole Etching in InP and GaAs Power Device Structures

1993 ◽  
Vol 324 ◽  
Author(s):  
S. J. Pearton ◽  
F. Ren ◽  
C. R. Abernathy ◽  
C. Constantine
Keyword(s):  
Heterojunction Bipolar Transistors ◽  
Optical Emission ◽  
High Electron Mobility Transistors ◽  
Input Power ◽  
Bipolar Transistors ◽  
High Electron ◽  
Non Invasive ◽  
Electron Mobility Transistors ◽  
Via Holes ◽  
Point Detection

AbstractNarrow (∼30 μm ϕ) via holes have been etched in both InP and GaAs substrates using either C12/CH4/H2 /Ar or BC13/C12 discharges, respectively. High density (∼5×1011 cm−3), low pressure (1 mTorr for C12/CH4/H2/Ar or 15 mTorr for BC13/C12) conditions, combined with sidewall passivation obtained using AZ 4620 photoresist masks, produce the correct profiles for subsequent metallization to complete the via connection. Optical emission monitoring of the 417.2 nm Ga line during GaAs etching or of the 325.6 nm In line during InP etching provided a sensitive, non invasive and reliable indicator of endpoint for both types of substrates. The intensity of these lines was proportional to the microwave input power at fixed dc bias and pressure. The via holes are suitable for a range of InP and GaAs microwave power devices, including Heterojunction Bipolar Transistors and High Electron Mobility Transistors.

The Use of Low Temperature AlInAs and GalnAs Lattice Matched to InP in the Fabrication of HBTs and HEMTs

1991 ◽  
Vol 241 ◽  
Author(s):  
R. A. Metzger ◽  
A. S. Brown ◽  
R. G. Wilson ◽  
T. Liu ◽  
W. E. Stanchina ◽  
...  
Keyword(s):  
Heterojunction Bipolar Transistors ◽  
Normal Growth ◽  
High Electron Mobility Transistors ◽  
Bipolar Transistors ◽  
Device Performance ◽  
High Electron ◽  
High Electron Mobility ◽  
Temperature Range ◽  
Electron Mobility Transistors ◽  
Lattice Matched

ABSTRACTAlInAs and GaInAs lattice matched to InP and grown by MBE over a temperature range of 200 to 350°C (normal growth temperature of 500°C) has been used to enhance the device performance of inverted (where the donor layer lies below the channel) High Electron Mobility Transistors (HEMTs) and Heterojunction Bipolar Transistors (HBTs), respectively. We will show that an AlInAs spacer grown over a temperature range of 300 to 350°C and inserted between the AlInAs donor layer and GaInAs channel significantly reduces Si movement from the donor layer into the channel. This produces an inverted HEMT with a channel charge of 3.0×1012 cm−2 and mobility of 9131 cm2/V-s, as compared to the same HEMT with a spacer grown at 500 °C resulting in a channel charge of 2.3×1012 cm−2 and mobility of 4655 cm2/V-s. We will also show that a GaInAs spacer grown over a temperature range of 300 to 350°C and inserted between the AlInAs emitter and GalnAs base of an npn HBT significantly reduces Be movement from the base into the emitter, thereby allowing higher Be base dopings (up to 1×1020 cm−3) confined to 500 Å base widths, resulting in an AlInAs/GaInAs HBT with an fmax of 73 GHz and ft of 110 GHz.

High Electron Mobility Transistors with Optically Processed Refractory Silicide Metallizations: Thermal and Microwave Analysis

1991 ◽  
Vol 240 ◽  
Author(s):  
P. F. Tang ◽  
M. S. Fan ◽  
A. A. Illiadis
Keyword(s):  
High Temperature ◽  
Ohmic Contacts ◽  
Temperature Stability ◽  
High Electron Mobility Transistors ◽  
Input Power ◽  
Junction Temperature ◽  
High Electron ◽  
High Temperature Stability ◽  
High Electron Mobility ◽  
Electron Mobility Transistors

ABSTRACTThe enhanced high temperature gate metallizations consisting of sputtered TiWSi or TiWN were investigated in order to attain high temperature stability at temperatures in excess of 250°C. The TiWN/Au system resulted in a sheet resistance of only 11.5 mΩ/□ while TiWSi/Au resulted in 75.0 mΩ/□. The HEMTs and FETs processed with additional stable ohmic contacts of epitaxial Ge/Pd structures exhibited a stable transconductance of 160 -180 mS/mm at temperatures of 300°C. Thermal analysis indicated the peak junction temperature increase with an input power of 200mW to be less than 18°C at substrate temperature of 60°C.

Molecular-Beam Epitaxy and Device Applications of III-V Semiconductor Nanowires

MRS Bulletin ◽  
1999 ◽  
Vol 24 (8) ◽  
pp. 25-30 ◽  
Author(s):  
Hideki Hasegawa ◽  
Hajime Fujikura ◽  
Hiroshi Okada
Keyword(s):  
Quantum Wells ◽  
Heterojunction Bipolar Transistors ◽  
Quantum Wires ◽  
Electron Tunneling ◽  
High Electron Mobility Transistors ◽  
Industrial Applications ◽  
Production Level ◽  
Quantum Structures ◽  
High Electron ◽  
Electron Mobility Transistors

A scaling-down of feature sizes into the nanometer range is a common trend in silicon and compound semiconductor advanced devices. That this trend will continue is clearly evidenced by the fact that the “roadmap” for the Si ultralarge-scale-integration circuit (USLI) industry targets production-level realization of a 70-nm minimum feature size for the year 2010. GaAs- and InP-based heterostructure devices such as high-electron-mobility transistors (HEMTs) and heterojunction bipolar transistors (HBTs) have made remarkable progress by miniaturization, realizing ultrahigh speeds approaching the THz range with ultralow power consumption. Due to progress in nanofabrication technology, feature sizes of scaled-down transistors are rapidly approaching the Fermi wavelength of electrons in semiconductors, even at the production level. This fact may raise some concerns about the operation of present-day devices based on semiclassical principles.However, the progress of nanofabrication technology has opened up the exciting possibility of constructing novel quantum devices, based directly on quantum mechanics, by utilizing artificial structures such as quantum wells, wires, and dots. In these structures, new physical effects appear, such as the formation of new quantum states in single and coupled quantum structures, artificial miniband formation in superlattices, tunneling and resonant tunneling in single and multiple barriers, propagation of phase-coherent guided electron waves in quantum wires, conductance oscillations in small tunnel junctions due to single-electron tunneling, and so on. We expect that these effects will offer rich functionality in next-generation semiconductor quantum ULSIs based on artificial quantum structures, with feature sizes in the range of one to a few tens of nanometers. Beyond this, molecular-level ULSIs using exotic materials and various chemical and electrochemical processes other than the standard semiconductor ones may appear, butat present, they still seem to be too far in the future for realistic consideration for industrial applications.

Electronic and Photonic Device Applications of In0.5Ga0.5P and In0.5Al0.5P Grown by Gas Source Molecular Beam Epitaxy

1994 ◽  
Vol 340 ◽  
Author(s):  
Jenn-Ming Kuo
Keyword(s):  
Heterojunction Bipolar Transistors ◽  
Molecular Beam ◽  
Red Light ◽  
High Electron Mobility Transistors ◽  
Band Alignment ◽  
High Electron ◽  
Si Substrates ◽  
Molecular Beam Epitaxial ◽  
Electron Mobility Transistors ◽  
Gas Source

ABSTRACTAdvances in gas-source molecular beam epitaxial (GSMBE) growth techniques have allowed the successful fabrication of electronic and photonic devices based on In0.5Ga0.5P and In0.5A10.5P heterostructures lattice matched to GaAs. Basically the interest in In0.5Ga0.5P and In0.5A10.5P derives from their unique material properties as well as their band alignment to GaAs. In this paper, we review the growth, fabrication, and performance of In0.5A10.5P/In0.2Ga0.8As pseudomorphic high electron mobility transistors (HEMT's), InO.5A10.5P/GaAs heterojunction bipolar transistors (HBT's), and In0.5Ga0.5P red light emitting diodes (LED's) grown on Ge/graded GexSil-x/Si substrates. The results provide a solid demonstration of the feasibility of using In0.5Ga0.5P and In0.5A10.5P prepared by GSMBE for manufacturing GaAs-based optoelectronic devices.

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