Giant Magnetoresistance in As-Sputter-Deposited Au/NiFe Multilayer Thin Films

1994 ◽  
Vol 343 ◽  
Author(s):  
W. Y. Lee ◽  
G. Gorman ◽  
R. Savoy
Keyword(s):  
Thin Films ◽  
Exchange Coupling ◽  
Giant Magnetoresistance ◽  
Magnetic Hysteresis ◽  
Hysteresis Loops ◽  
Multilayer Films ◽  
Antiferromagnetic Coupling ◽  
Multilayer Thin Films ◽  
Glass Substrates ◽  
Sputter Deposited

ABSTRACTGiant magnetoresistance with low saturation fields (Hs’s) is reported in Au and permalloy (Ni0.82Fe0.18) or Co-doped permalloy multilayer thin films as-deposited on Ta-overcoated Si and glass substrates. A ΔR/R as high as 4.0% with ≈25 Oe Hs was observed at 295 K for the film consisting of 10 layers of 24 Å Au/13 Å Ni0.82Fe0.18 deposited on a 3 Å Ta-overcoated glass at 50 °C. A Hs value as low as ≈20 Oe with a 15% smaller ΔR/R has been observed for the films with a thicker (e.g., 50 Å) Ta underlayer. Magnetic hysteresis loops of these films indicate the presence of antiferromagnetic exchange coupling between the Ni0.82Fe0.18 layers. This exchange coupling is much smaller for the multilayer films without the Ta underlayer, resulting in a 6x smaller ΔR/R and lOx larger Hs observed for these films. Results of x-ray diffraction analysis indicate stronger (111) texturing for the multilayer films with a Ta underlayer, consistent with the stronger antiferromagnetic coupling between the the Ni0.82Fe0.18 layers in the film. The addition of 2–10 % Co moderately increases the ΔR/R value, but also increases substantially the Hs (up to ≈200 Oe).

scholarly journals Magnetically Anisotropic Ni2MnGa Thin Films: Coating Glass and Si Micro-Cantilevers Substrates

2009 ◽  
Vol 635 ◽  
pp. 161-166 ◽  
Author(s):  
Vicente Madurga ◽  
C. Favieres ◽  
J. Vergara
Keyword(s):  
Thin Films ◽  
Magnetic Hysteresis ◽  
Hysteresis Loops ◽  
Anisotropy Field ◽  
Inert Atmosphere ◽  
Glass Substrates ◽  
Incidence Plane ◽  
Easy Direction ◽  
Magnetic Hysteresis Loops ◽  
Deposition Processes

Ni2MnGa thin films, with thickness between 30 and 60 nm, were pulsed-laser deposited at room temperature on Si micro-cantilevers and glass substrates. Two different deposition processes were performed: normal deposition and off¬-normal. After annealing in an inert atmosphere, in-plane isotropic magnetic hysteresis loops were measured for the normal deposited films. In contrast, in-plane anisotropic hysteresis loops were obtained from the off-normal deposited ones. An in-plane easy direction for the magnetisation, perpendicular to the incidence plane of the plasma during deposition, was measured with an anisotropy field of ≈100 Oe and an easy coercive field of ≈24 Oe. The mechanical behaviour of the magnetically anisotropic coated micro-cantilevers and their response to a decreasing temperature permitted observing the martensitic transformation of the Ni2MnGa thin films.

scholarly journals Magnetic Exchange-Coupling In Copt/Co Bilayer Thin Films

1999 ◽  
Vol 562 ◽  
Author(s):  
J. Kim ◽  
K. Barmak ◽  
L. H. Lewist ◽  
D. C. Crewt ◽  
D. O. Welcht
Keyword(s):  
Exchange Coupling ◽  
Magnetic Hysteresis ◽  
Hysteresis Loops ◽  
Magnetic Exchange ◽  
Two Phase ◽  
Soft Phase ◽  
Sputter Deposited ◽  
Equiatomic Alloy ◽  
Fcc Phase ◽  
Soft Composite

ABSTRACTThin film CoPt/Co bilayers have been prepared as a model system to investigate the relationship between microstructure and exchange coupling in two-phase hard/soft composite magnets. CoPt films, with a thickness of 25 nm, were sputter-deposited from a nearly equiatomic alloy target onto oxidized Si wafers. The films were subsequently annealed at 700°C and fully transformed from the FCC phase to the magnetically hard, ordered LI0 phase. The coercivity of the films increased rapidly with annealing time until it reached a plateau at approximately 9.5 kOe. Fully-ordered CoPt films were then used as substrates for deposition of Co layers, with thicknesses in the range of 2.8–225 nm, in order to produce the hard/soft composite bilayers. As predicted by theory, the magnetic coherency between the soft Co phase and the hard, ordered CoPt phase decreased as the thickness of the soft phase increased. This decrease in coupling was clearly seen in the magnetic hysteresis loops of the bilayers. At small thicknesses of Co (a few nanometers), the shape of the loop was one of a uniform material showing no indication of the presence of two phases with extremely different coercivities. At larger Co thicknesses, constricted loops, i.e., ones showing the presence of a mixture of two ferromagnetic phases of different hardnesses, were obtained. The magnetic exchange present in the bilayer samples was qualitatively analyzed using magnetic recoil curves and the dependence of exchange coupling on the soft phase dimension in the bilayer hard/soft composite magnet films is discussed.

In-plane Anisotropy in Hetero-Amorphous (CoFeB)-SiO2 Thin Films

2002 ◽  
Vol 754 ◽  
Author(s):  
P. Johnsson ◽  
I. Aoqui ◽  
K. Nötzold ◽  
J. Allebert ◽  
M. Munakata ◽  
...  
Keyword(s):  
Thin Films ◽  
Giant Magnetoresistance ◽  
Magnetic Hysteresis ◽  
Hysteresis Loops ◽  
Rf Magnetron Sputtering ◽  
Film Plane ◽  
Amorphous Thin Films ◽  
Plane Anisotropy ◽  
Hopping Model ◽  
Variable Range Hopping Model

ABSTRACTIn order to engineer materials suitable for micromagnetic inductor cores we have fabricated and investigated the properties of granular (CoFeB)-SiO2 amorphous thin films. The deposition method, synchronous triple-rf magnetron sputtering onto rotating substrates, induces anisotropy in the film plane. Here we present magnetic hysteresis loops, resistivity and magnetoresistance measurements of two of these films, with different amount of metallic content. Both films have anisotropic resistivity, which is higher for the film with less metallic content. The low-metallic-content film exhibits typical isotropic giant magnetoresistance (GMR), while the film with higher metallic content shows a mixture of GMR and anisotropic magnetoresistance (AMR). The AMR appears at fields below 500 Oe. We believe that this has not been observed before in amorphous samples. The behaviour of the resistivity versus temperature ρ (T) indicates that the sample with lower metallic content consists of isolated grains while the high-metallic-content sample consists of a percolated network. Experimental ρ (T) data for the low-metallic-content sample fit: to the variable-range hopping model at temperatures lower than 221 K and can be described by excitation of the carriers to the mobility edge at higher temperatures.

scholarly journals Magnetic Exchange-Coupling in CoPt/Co Bilayer thin Films

1999 ◽  
Vol 577 ◽  
Author(s):  
J. Kim ◽  
K. Barmak ◽  
L. H. Lewis ◽  
D. C. Crewt ◽  
D. O. Welcht
Keyword(s):  
Exchange Coupling ◽  
Magnetic Hysteresis ◽  
Hysteresis Loops ◽  
Magnetic Exchange ◽  
Two Phase ◽  
Soft Phase ◽  
Sputter Deposited ◽  
Equiatomic Alloy ◽  
Fcc Phase ◽  
Soft Composite

ABSTRACTThin film CoPt/Co bilayers have been prepared as a model system to investigate the relationship between microstructure and exchange coupling in two-phase hard/soft composite magnets. CoPt films, with a thickness of 25 nm, were sputter-deposited from a nearly equiatomic alloy target onto oxidized Si wafers. The films were subsequently annealed at 700°C and fully transformed from the FCC phase to the magnetically hard, ordered L1 0 phase. The coercivity of the films increased rapidly with annealing time until it reached a plateau at approximately 9.5 kOe. Fully-ordered CoPt films were then used as substrates for deposition of Co layers, with thicknesses in the range of 2.8-225 nm, in order to produce the hard/soft composite bilayers. As predicted by theory, the magnetic coherency between the soft Co phase and the hard, ordered CoPt phase decreased as the thickness of the soft phase increased. This decrease in coupling was clearly seen in the magnetic hysteresis loops of the bilayers. At small thicknesses of Co (a few nanometers), the shape of the loop was one of a uniform material showing no indication of the presence of two phases with extremely different coercivities. At larger Co thicknesses, constricted loops, i.e., ones showing the presence of a mixture of two ferromagnetic phases of different hardnesses, were obtained. The magnetic exchange present in the bilayer samples was qualitatively analyzed using magnetic recoil curves and the dependence of exchange coupling on the soft phase dimension in the bilayer hard/soft composite magnet films is discussed.

Characterization of reactive phase formation in sputter-deposited Ni/Al multilayer thin films using TEM

1996 ◽  
Vol 54 ◽  
pp. 1000-1001
Author(s):  
G. Lucadamo ◽  
K. Barmak ◽  
C. Michaelsen
Keyword(s):  
Thin Films ◽  
Phase Formation ◽  
Dark Field ◽  
Nickel Layer ◽  
Multilayer Thin Films ◽  
Cross Sectional ◽  
Dark Field Imaging ◽  
Transmission Electron ◽  
Sputter Deposited ◽  
Constant Heating

The subject of reactive phase formation in multilayer thin films of varying periodicity has stimulated much research over the past few years. Recent studies have sought to understand the reactions that occur during the annealing of Ni/Al multilayers. Dark field imaging from transmission electron microscopy (TEM) studies in conjunction with in situ x-ray diffraction measurements, and calorimetry experiments (isothermal and constant heating rate), have yielded new insights into the sequence of phases that occur during annealing and the evolution of their microstructure.In this paper we report on reactive phase formation in sputter-deposited lNi:3Al multilayer thin films with a periodicity A (the combined thickness of an aluminum and nickel layer) from 2.5 to 320 nm. A cross-sectional TEM micrograph of an as-deposited film with a periodicity of 10 nm is shown in figure 1. This image shows diffraction contrast from the Ni grains and occasionally from the Al grains in their respective layers.

TEM studies of solid-state reactions in sputter-deposited Nb/Al multilayer thin films

1996 ◽  
Vol 54 ◽  
pp. 1020-1021
Author(s):  
F. Ma ◽  
S. Vivekanand ◽  
K. Barmak ◽  
C. Michaelsen
Keyword(s):  
Thin Films ◽  
Solid State ◽  
Stoichiometric Composition ◽  
Analytical Electron Microscopy ◽  
Grain Structure ◽  
Solid State Reactions ◽  
Multilayer Thin Films ◽  
X Ray Diffraction ◽  
X Ray ◽  
Sputter Deposited

Solid state reactions in sputter-deposited Nb/Al multilayer thin films have been studied by transmission and analytical electron microscopy (TEM/AEM), differential scanning calorimetry (DSC) and X-ray diffraction (XRD). The Nb/Al multilayer thin films for TEM studies were sputter-deposited on (1102)sapphire substrates. The periodicity of the films is in the range 10-500 nm. The overall composition of the films are 1/3, 2/1, and 3/1 Nb/Al, corresponding to the stoichiometric composition of the three intermetallic phases in this system.Figure 1 is a TEM micrograph of an as-deposited film with periodicity A = dA1 + dNb = 72 nm, where d's are layer thicknesses. The polycrystalline nature of the Al and Nb layers with their columnar grain structure is evident in the figure. Both Nb and Al layers exhibit crystallographic texture, with the electron diffraction pattern for this film showing stronger diffraction spots in the direction normal to the multilayer. The X-ray diffraction patterns of all films are dominated by the Al(l 11) and Nb(l 10) peaks and show a merging of these two peaks with decreasing periodicity.

The Characteristics of Multilayer Thin Films Deposited with Metal Thin Films (Ag, Al, Cu)

2010 ◽  
Vol 97-101 ◽  
pp. 1768-1771 ◽  
Author(s):  
Dong Hun Kim ◽  
Riichi Murakami ◽  
Yun Hae Kim ◽  
Kyung Man Moon ◽  
Seung Jung An ◽  
...  
Keyword(s):  
Thin Films ◽  
Metal Particles ◽  
Zno Thin Films ◽  
Multilayer Thin Films ◽  
Electrical And Optical Properties ◽  
Metal Thin Films ◽  
Continuous Structure ◽  
Glass Substrates ◽  
The Difference ◽  
Sputtering System

In order to study the characteristics of multilayer thin films with a ZnO/ metal/ ZnO structure the manufacture of the thin films was performed by a dc (direct current) magnetron sputtering system on slide glass substrates. The ZnO thin films were manufactured with the thicknesses of 30 nm and 50 nm. Three kinds of metals (Ag, Al and Cu) were deposited with the thicknesses of 4 nm, 8 nm, 12 nm and 16 nm. The electrical and optical properties of the manufactured thin films were then observed. As a result, the multilayer thin films with an Ag layer represented the most excellent electrical conductivity. This is due to the difference in the fundamental electrical properties of each of the metals. The structures of the metal particles deposited on the ZnO thin films were observed by an SEM (scanning electron microscope). The thin films exhibited a continuous structure with regular spaces between the metal particles. This resulted in an increase of transmittance. This is considered by the decrease of scattering and of light absorption on thin films with a continuous structure.

Exchange Bias in CrO2/Cr2O3 Bilayer Thin Films

2006 ◽  
Vol 45 ◽  
pp. 2528-2533 ◽  
Author(s):  
S. Srinath ◽  
N.A. Frey ◽  
H. Srikanth ◽  
G.X. Miao ◽  
A. Gupta
Keyword(s):  
Thin Films ◽  
Magnetic Anisotropy ◽  
Variable Thickness ◽  
Exchange Bias ◽  
Exchange Coupling ◽  
Hysteresis Loops ◽  
Anisotropy Constant ◽  
Effective Magnetic Anisotropy ◽  
Large Anisotropy

We have investigated the exchange bias in CVD grown epitaxial CrO2/Cr2O3 bilayer thin films using hysteresis loops and resonant RF transverse susceptibility. M-H loops indicated an enhanced coercivity without appreciable loop shift and the transverse susceptibility in CrO2/Cr2O3 bilayers revealed features associated with both the ferromagnetic and antiferromagnetic phases. In addition, TS yielded large anisotropy constant (Keff) values depending on the fraction of Cr2O3 present. The large anisotropy fields observed cannot be accounted for by the variable thickness of CrO2 alone and are indicative of possible exchange coupling between CrO2 and Cr2O3 phases that significantly affects the effective magnetic anisotropy.

scholarly journals Effects of LaNiO3 Seed Layer on the Microstructure and Electrical Properties of Ferroelectric BZT/PZT/BZT Thin Films

2021 ◽  
Vol 8 ◽  
Author(s):  
Jinyu Ruan ◽  
Chao Yin ◽  
Tiandong Zhang ◽  
Hao Pan
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Surface Roughness ◽  
Electrical Properties ◽  
Seed Layer ◽  
Ferroelectric Properties ◽  
Lower Surface ◽  
Multilayer Films ◽  
Multilayer Thin Films ◽  
Orientation Growth

Ferroelectric multilayer films attract great attention for a wide variation of applications. The synergistic effect by combining different functional layers induces distinctive electrical properties. In this study, ferroelectric BaZr0.2Ti0.8O3/PbZr0.52Ti0.48O3/BaZr0.2Ti0.8O3 (BZT/PZT/BZT) multilayer thin films are designed and fabricated by using the magnetron sputtering method, and a LaNiO3 (LNO) seed layer is introduced. The microstructures and electrical properties of the BZT/PZT/BZT films with and without the LNO seed layer are systematically studied. The results show that the BZT/PZT/BZT/LNO thin film exhibits much lower surface roughness and a preferred (100)-orientation growth, with the growth template and tensile stress provided by the LNO layer. Moreover, an enhanced dielectric constant, decreased dielectric loss, and improved ferroelectric properties are achieved in BZT/PZT/BZT/LNO thin films. This work reveals that the seed layer can play an important role in improving the microstructure and properties of ferroelectric multilayer films.

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