Blue And Yellow Light Emitting Phosphors For Thin Film Electroluminescent Displays

1994 ◽  
Vol 345 ◽  
Author(s):  
Paul H. Holloway ◽  
J.-E. Yu ◽  
Phillip Rack ◽  
Joseph Sebastian ◽  
Sean Jones ◽  
...  
Keyword(s):  
Thin Film ◽  
Luminescence Spectra ◽  
Yellow Light ◽  
Light Emitting ◽  
Technology Center ◽  
Threshold Voltages ◽  
Passivation Layers ◽  
Sputter Deposited ◽  
20 Nm

AbstractFollowing a description of the purpose and participating members in the Phosphor Technology Center of Excellence, research on the growth and characterization of modulation doped ZnS:Mn and of Ca0.95Sr0.05Ga2S4:6%Ce are reported. ZnS:Mn has been grown using MOCVD and incorporation of Mn in 1 to 5 layers from 5 to 20 nm thick separated by layers of pure ZnS from 5 to 50 nm thick. This is shown to result in lower threshold voltages for ACTFELD displays. The luminescence spectra from sputter deposited, cerium-doped thiogallate thin films were measured and the diffusion of thin ZnS passivation layers versus temperature of heat treatment was discussed.

Preparation and Characterization of ZnO Thin Film Doped with Eu via Sol-Gel Method

2007 ◽  
Vol 336-338 ◽  
pp. 585-588 ◽  
Author(s):  
Dao Qi Xue ◽  
Jun Ying Zhang ◽  
Hai Bing Feng ◽  
Tian Min Wang
Keyword(s):  
Thin Film ◽  
Sol Gel ◽  
Luminescent Properties ◽  
Dip Coating ◽  
Luminescence Spectra ◽  
Zno Thin Film ◽  
Excitation Spectra ◽  
Coating Method ◽  
Dip Coating Method

ZnO:Eu3+ films were obtained by dip-coating method and influence of heat treatment on luminescent properties was investigated. Emission and excitation spectra revealed that the organic and nitrate molecules, which adhered on the surface of films when the samples were treated at lower temperatures (300oC-400oC), played an important role on the luminescent properties. At higher temperatures (500oC-800oC), the luminescence spectra of ZnO and Eu3+ were quite different with those treated at lower temperatures. Energy transferred from ZnO host to Eu3+ was obviously observed in the emission and excitation spectra. The luminescence mechanism was discussed briefly.

The Influence on the Organic Electroluminescent Device Performance with Different DPAVBi Position

2013 ◽  
Vol 333-335 ◽  
pp. 1984-1987
Author(s):  
Gang Zhang ◽  
Wen Long Jiang
Keyword(s):  
Green Light ◽  
Maximum Efficiency ◽  
Device Performance ◽  
Maximum Luminance ◽  
Yellow Light ◽  
Light Emitting ◽  
Electroluminescent Device ◽  
Organic Electroluminescent ◽  
20 Nm ◽  
Better Than

We studied the influence on the organic electroluminescent device performance with different DPAVBi position. When DPAVBi was the separate blue light emitting layer and its thickness was 20 nm, the performance of the device is better than others. The yellow light device performance with DPAVBi behind the Rubrene layer is better than the device with it in front of Rubrene layer. The device has a maximum luminous 23560 cd/m2 at 17V and maximum efficiency 6.63cd/A at 16 V. We have received the blue-green light device with the Rubrene doped to DPAVBi. The maximum efficiency is 5.37 cd/A at 9 v and the maximum luminance is 6377 cd/m2 at 16 V. The efficiency drops slowly when the voltage increases. So, all the devices have the current weak fluorescence quenching.

Characterization of Copper Diffusion into Al and Al-1% Si Polycrystalline Thin Films

1995 ◽  
Vol 403 ◽  
Author(s):  
L. H. Walsh ◽  
G. O. Ramseyer ◽  
J. V. Beasock ◽  
H. F. Helbig ◽  
K. P. MacWilliams
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Surface Morphology ◽  
Copper Diffusion ◽  
Cu Films ◽  
Polycrystalline Thin Films ◽  
Sample Depth ◽  
Versus Sample ◽  
Sputter Deposited

AbstractAl and AI-1%Si 900 nanometer thin films were deposited on 100 nanometer Cu films on thermally oxidized (100 nanometer) Si wafers. The Al and Cu films were deposited using evaporation techniques, and the Al-1%Si film was sputter deposited. Different thin film samples were heated in vacuum to 175, 250, 330 and 400°C for 1 hour. The various annealed and original samples were compared using surface morphology, as well as composition versus sample depth. Differences between the Al and Al-1%Si samples are discussed.

Integration of InGaN-based Optoelectronics with Dissimilar Substrates by Wafer Bonding and Laser Lift-off

2001 ◽  
Vol 681 ◽  
Author(s):  
William S. Wong ◽  
Michael Kneissl ◽  
David W. Treat ◽  
Mark Teepe ◽  
Naoko Miyashita ◽  
...  
Keyword(s):  
Thin Film ◽  
Wafer Bonding ◽  
Device Performance ◽  
Light Emitting ◽  
Si Substrates ◽  
Substrate Removal ◽  
Transparent Substrate ◽  
Before And After ◽  
Lift Off

ABSTRACTInGaN-based optoelectronics have been integrated with dissimilar substrate materials using a novel thin-film laser lift-off process. By employing the LLO process with wafer-bonding techniques, InGaN-based light emitting diodes (LEDs) have been integrated with Si substrates, forming vertically structured LEDs. The LLO process has also been employed to integrate InGaN-based laser diodes (LDs) with Cu and diamond substrates. Separation of InGaN-based thin-film devices from their typical sapphire growth substrates is accomplished using a pulsed excimer laser in the ultraviolet regime incident through the transparent substrate. Characterization of the LEDs and LDs before and after the sapphire substrate removal revealed no measurable degradation in device performance.

Fabrication and Characterization of Poly(3-hexylthiophene) Thin Film Photovoltaic Device and Light Emitting Diode

2009 ◽  
Author(s):  
Lim Lih Wei ◽  
Khaulah Sulaiman ◽  
Swee-Ping Chia ◽  
Kurunathan Ratnavelu ◽  
Muhamad Rasat Muhamad
Keyword(s):  
Thin Film ◽  
Light Emitting Diode ◽  
Photovoltaic Device ◽  
Light Emitting ◽  
Fabrication And Characterization

Preparation and Characterization of Pt Coated on Al-Doped ZnO Nanorods Thin Film at Different Thicknesses

2015 ◽  
Vol 1109 ◽  
pp. 271-275
Author(s):  
M.N. Wahida ◽  
M.H. Mamat ◽  
A.A.M. Yusoff ◽  
Mohamad Rusop
Keyword(s):  
Thin Film ◽  
Absorption Rate ◽  
Zno Nanorods ◽  
Oxygen Absorption ◽  
Uv Absorbance ◽  
Voltage Measurement ◽  
Current Voltage ◽  
Doped Zno ◽  
20 Nm

The surfaces of Al-doped ZnO nanorods thin films were coated with platinum (Pt) by five different thicknesses; 5 nm, 10 nm, 15 nm, 20 nm and 25 nm. The resistivity decreases while the conductivity increases, proving the trend in current-voltage measurement. The transmittance spectra show diverse result. Meanwhile the 5 nm coating sample shows highest absorbance characteristic among others. This absorption coefficient was calculated from transmittance obtained by UV-vis spectra, indicating that they have high UV absorbance properties at wavelengths below 400 nm. Absorption rate might be due to the thickness of Pt that allows the penetration of UV for more oxygen absorption.

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