Hard High Density Carbon Thin Films for X-Ray Multilayer Optics

1994 ◽  
Vol 349 ◽  
Author(s):  
Joseph Pedulla ◽  
Axel Bartos ◽  
Richard D. Deslattes
Keyword(s):  
Ion Beam ◽  
High Hardness ◽  
Carbon Films ◽  
High Electron ◽  
Optical Elements ◽  
X Ray ◽  
Force Microscopy ◽  
Surface And Interface ◽  
Atomic Force ◽  
High Uniformity

ABSTRACTDual ion beam assisted deposition (DIBAD) techniques are known to produce high quality diamond-like carbon films. The reported extreme hardness and high thermal conductivity characteristics of these films have stimulated our investigation of their use as one component of multilayer x-ray optical elements. Non-crystalline carbon films were produced and were characterized by means of highly collimated x-ray refiectometry (λ = 0.154 nn), atomic force microscopy, and IR Raman spectroscopy techniques. They exhibit extreme smoothness at the surface and interface, near diamond density, high hardness, and high uniformity over areas of 0.58 x 10-4 m2. Multilayers have been constructed of this non-crystalline carbon interposed with high electron density materials that have exhibited very good x-ray and EUV optical characteristics at λ = 0.154 nm and at λ = 4.0 – 8.0 nm.

Surface and Interface Characterization of Ion Beam Re-crystallized Si

2002 ◽  
Vol 750 ◽  
Author(s):  
P. K. Sahoo ◽  
B. Satpati ◽  
S. Dey ◽  
P. V. Satyam ◽  
T. Som ◽  
...  
Keyword(s):  
Ion Beam ◽  
Amorphous Layer ◽  
Amorphous Structure ◽  
Average Height ◽  
Force Microscopy ◽  
Surface And Interface ◽  
Atomic Force ◽  
Nano Crystalline ◽  
Transmission Electron

ABSTRACTIn the present work we have studied efficacy of ion beam induced epitaxial crystallization (IBIEC) to recover amorphous layers (300 – 350 nm) produced by MeV Kr ions in Si(100) and studied the associated changes occurring on surface and interface of the recrystallized region. IBIEC experiments were carried out at sample temperatures in the range of 200 − 400°C using 1 MeV N+ ion beam. Rutherford backscattering-Channeling technique showed planar and gradual recovery of the amorphous layer as a function of temperature. Transmission electron microscopy measurements show good crystalline structure of the recovered region at 400°C while at lower temperatures nano-crystalline Si formation embedded in the amorphous structure is evident. The surface topography studied by atomic force microscopy shows development of islands after IBIEC. The rms roughness is around 0.5 nm and average height of the islands is found to be 1.8 nm. The observed epitaxial growth and the surface topographical features have been correlated.

Effect of Argon Addition on Nitrogen Containing Carbon Films Prepared by Hot Carbon Filament CVD

1999 ◽  
Vol 593 ◽  
Author(s):  
Yoshihisa Watanabe ◽  
Shinobu Ohnita ◽  
Nobuaki Kitazawa ◽  
Yoshikazu Nakamura
Keyword(s):  
Photoelectron Spectroscopy ◽  
Nitrogen Concentration ◽  
Carbon Films ◽  
Nitrogen Atmosphere ◽  
Carbon Filament ◽  
X Ray ◽  
Force Microscopy ◽  
Carbon And Nitrogen ◽  
Atomic Force ◽  
High Nitrogen Concentration

ABSTRACTNitrogen containing amorphous carbon (a-CNx) films were prepared on silicon single crystal substrates by heating a carbon filament in low pressure nitrogen atmosphere and the effects of argon addition to nitrogen atmosphere were studied by changing the argon fraction under the total pressure of 100 Pa. The growth rate of the films is found to decrease with increasing the argon fraction. x-ray photoelectron spectroscopy shows that the films are composed of carbon and nitrogen and the optimal fraction of argon addition is observed for increasing the nitrogen concentration. Observations by atomic force microscopy reveal that the film surfaces are covered with particle-like features and the size of the features decreases drastically by argon addition. It is concluded that argon addition to the reactant gas is effective in synthesizing a-CNx films with the smooth surface and high nitrogen concentration

Fundamental Criteria for the Propagation of Telephone Cord Buckles Beneath DLC Films on Glass Substrates

2001 ◽  
Vol 695 ◽  
Author(s):  
Myoung-Woon Moon ◽  
Kyang-Ryel Lee ◽  
Jin-Won Chung ◽  
And Kyu Hwan Oh
Keyword(s):  
Focused Ion Beam ◽  
Imaging System ◽  
Ion Beam ◽  
Repeat Unit ◽  
Carbon Films ◽  
Local Mode ◽  
Force Microscopy ◽  
Glass Substrates ◽  
Atomic Force ◽  
Insight Into

ABSTRACTThe topology of telephone cord buckles that form beneath compressed diamond-like carbon films (DLC) on glass substrates has been characterized with Atomic Force Microscopy (AFM) and with the Focused Ion Beam (FIB). Using AFM with 2nm resolution, the wavelength and amplitude of the buckles and their profiles have been measured. It has been found that, within each wavelength, the profile has symmetric and asymmetric segments. These changes have been related to differences in local mode mixity around the periphery of each repeat unit along the buckle, resulting in a fundamental rationale for the factors governing the wavelength. Sections made through various segments of the buckle by using the FIB imaging system result in local changes in the shape and size of the buckles that provide further insight into the buckle propagation criterion.

Improvement of surface and interface roughness estimation on X-ray reflectivity

2014 ◽  
Vol 29 (3) ◽  
pp. 265-268 ◽  
Author(s):  
Y. Fujii
Keyword(s):  
Diffuse Scattering ◽  
Interface Roughness ◽  
Careful Study ◽  
Angle Of Incidence ◽  
Interference Effects ◽  
X Ray ◽  
Force Microscopy ◽  
Surface And Interface ◽  
Effective Roughness ◽  
Atomic Force

In the conventional X-ray reflectivity (XRR) analysis, the reflectivity is calculated based on the Parratt formalism, incorporating the effect of the interface roughness according to Nevot and Croce. However, the results of calculations of the XRR have shown strange outcomes, where interference effects increase at a rough surface because of a lack of consideration of diffuse scattering within the Parratt formalism. Therefore, we have developed a new improved formalism in which the effects of the surface and interface roughness are included correctly. In this study, for deriving a more accurate formalism of XRR, we tried to compare the measurements of surface roughness of the same sample by atomic force microscopy (AFM) and XRR. It is found that the AFM result could not be completely reproduced even with the improved XRR formalism. By careful study of the AFM results, we determined the need for an additional effective roughness term within the XRR simulation that depends on the angle of incidence of the beam.

Nanodot Formation in Thermally Annealed UHV-RTCVD Grown Si1-XGeX Epitaxial Layers on Silicon for Photovoltaics

2011 ◽  
Vol 1322 ◽  
Author(s):  
Abdennaceur Karoui ◽  
Anita S. Ethiraj
Keyword(s):  
Low Cost ◽  
Misfit Dislocations ◽  
Bandgap Engineering ◽  
Small Shift ◽  
X Ray ◽  
Force Microscopy ◽  
Surface And Interface ◽  
Strain Pattern ◽  
Atomic Force ◽  
Low Thermal Budget

ABSTRACTThe surface and interface of SiGe layers on Si were found to incur drastic changes during layer rapid growth and post-growth rapid annealing. As deposited and thermal annealed samples were characterized using Energy dispersive X-ray Analysis (EDX) enhanced by Monte Carlo simulation for precise evaluation of Ge concentration. X-ray Diffraction (XRD) data exhibited a small shift of the SiGe (400) peak towards low 2θ values, which was attributed, primarily, to change in the Ge concentration. Confocal Raman Spectroscopy of samples showed regions of high and low strain that resulted from fluctuations in Ge concentrations. Nano- and submicronpyramidal features at the surface of Si1-xGex layers (x=17% and 28%) were revealed by Atomic Force Microscopy (AFM) and SEM. Additionally, pyramidal nanodots were revealed for [Ge]=17% samples and high density nanostructure for 28% appeared along the crosshatch strain pattern induced by misfit dislocations, when annealed at 700°C and 900°C, respectively. The observed Ge-rich nano-features, which were obtained with low thermal budget low cost techniques, are expected to be useful for bandgap engineering and third generation solar cells.

Atomic force microscopy and X-ray diffraction study of surface and interface roughness in Nb/Cu multilayers

1996 ◽  
Vol 156 (1-3) ◽  
pp. 109-110 ◽  
Author(s):  
K. Temst ◽  
M.J. Van Bael ◽  
D.G. de Groot ◽  
N.J. Koeman ◽  
R.P. Griessen ◽  
...  
Keyword(s):  
Atomic Force Microscopy ◽  
Diffraction Study ◽  
Interface Roughness ◽  
X Ray Diffraction ◽  
X Ray ◽  
Force Microscopy ◽  
Surface And Interface ◽  
Atomic Force
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