A Study of Electrically Active Defects Induced by Pulsed
Electron Beam Annealing In (100) N-Type Virgin Silicon
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ABSTRACTAu/Si Schottky contacts have been used as test structures to investigate defects induced in virgin C.Z (100) N-type silicon after irradiation with a 12 to 20 KeV mean energy electron beam pulse. A thin and highly damaged surface layer was observed from a fluence threshold of 1 J/cm2. In addition electron traps were detected in the PEBA induced melting layer with concentrations in the 1012-1013 cm-3 range. Their depth profiles have been related to the PEBA induced melting layer thickness. Quenching of multidefect complexes is the most probable mechanism for electron trap generation in the processed layer.
2005 ◽
Vol 475-479
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pp. 3959-3962
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2021 ◽
Vol 2064
(1)
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pp. 012041
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2021 ◽
Vol 2064
(1)
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pp. 012043
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2019 ◽
Vol 803
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pp. 721-729
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2011 ◽
Vol 25
(12)
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pp. 1313-1317
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2009 ◽
Vol 79-82
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pp. 317-320
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