Defect Formation and Hydrogen Trapping in H+ Implanted FZ Silicon

1984 ◽  
Vol 36 ◽  
Author(s):  
W. J. Choyke ◽  
J. A. Spitznagel ◽  
N. J. Doyle ◽  
S. Wood ◽  
R. B. Irwin
Keyword(s):  
Defect Formation ◽  
Damage Zone ◽  
Dislocation Loops ◽  
Hydrogen Trapping ◽  
Temperature Dependent ◽  
Ion Channeling ◽  
Float Zone ◽  
Transmission Electron ◽  
Amorphous Zone ◽  
Post Implantation

ABSTRACTThe formation and annealing of buried damage layers in hydrogen implanted N-type float zone <111> silicon has been studied by Rutherford Backscattering/ion channeling and cross-section transmission electron microscopy. Implantation with 50 keV or 75 keV H+ ions was conducted at temperatures of 95K, 300K and 800K at fluences of 2×1017 H+/cm2, 8×1017 H+/cm2 and 1×1018 H+/cm2. Post implantation annealing was conducted at temperatures up to 800K. The results show a temperature dependent transition from a highly hydrogen doped amorphous zone bounded by strongly diffracting (TEM) 2–5 nm diameter defects for implantation at 95K to a crystalline microstructure containing small dislocation loops and ∼40% of the implanted hydrogen for implantation at 300K. Defect production and annealing and hydrogen trapping in the damage zone are shown to depend on the relative implantation and post implantation annealing temperatures.

ION CHANNELING AND PIXE STUDIES OF S IMPLANTATION IN GaAs

1992 ◽  
Vol 02 (02) ◽  
pp. 151-159
Author(s):  
LIU SHIJIE ◽  
WANG JIANG ◽  
HU ZAOHUEI ◽  
XIA ZHONGHUONG ◽  
GAO ZHIGIANG ◽  
...  
Keyword(s):  
Room Temperature ◽  
Dislocation Loops ◽  
Good Recovery ◽  
Electrical Measurements ◽  
X Ray ◽  
Defect Complexes ◽  
Ion Channeling ◽  
Transmission Electron ◽  
Activation Efficiency ◽  
Very High

GaAs (100) crystals were implanted with 100 keV S+ to a dose of 3×1015 cm−2 in a nonchanneling direction at room temperature, and treated with rapid thermal annealing (RTA). He+ Rutherford backscattering and particle-induced X-ray emission in channeling mode in combination with transmission electron microscopy (TEM) were used to study the damage and the lattice location of S atoms. It is revealed that the RTA at 950 °C for 10 sec has resulted in a very good recovery of crystallinity with a few residual defects in the form of dislocation loops, and a very high substitutionality (~90%). The activation efficiency and the Hall mobility of the implanted samples are found to be low after the electrical measurements. Based on these results an extended dopant diffusion effect for the residual defects and a correlation between the electrical properties and defect complexes are suggested.

Solute Segregation and Dynamics of Solid-Phase Crystallization In in and Sb-Implanted Silicon

1981 ◽  
Vol 4 ◽  
Author(s):  
J. Narayan ◽  
G. L. Olson ◽  
O. W. Holland
Keyword(s):  
Laser Power ◽  
Solid Phase ◽  
Solute Segregation ◽  
Dislocation Loops ◽  
Solid Phase Crystallization ◽  
Time Resolved ◽  
Plan View ◽  
Ion Channeling ◽  
Retrograde Solubility ◽  
Transmission Electron

ABSTRACTTime-resolved-reflectivity measurements have been combined with transmission electron microscopy (cross-section and plan-view), Rutherford backscattering and ion channeling techniques to study the details of laser induced solid phase epitaxial growth in In+ and Sb+ implanted silicon in the temperature range from 725 to 1500 °K. The details of microstructures including the formation of polycrystals, precipitates, and dislocations have been correlated with the dynamics of crystallization. There were limits to the dopant concentrations which could be incorporated into substitutional lattice sites; these concentrations exceeded retrograde solubility limits by factors up to 70 in the case of the Si-In system. The coarsening of dislocation loops and the formation of a/2<110>, 90° dislocations in the underlying dislocation-loop bands are described as a function of laser power.

scholarly journals Dislocation Loop Generation Differences between Thin Films and Bulk in EFDA Pure Iron under Self-Ion Irradiation at 20 MeV

Metals ◽  
2021 ◽  
Vol 11 (12) ◽  
pp. 2000
Author(s):  
Marcelo Roldán ◽  
Fernando José Sánchez ◽  
Pilar Fernández ◽  
Christophe J. Ortiz ◽  
Adrián Gómez-Herrero ◽  
...  
Keyword(s):  
Thin Films ◽  
Computational Models ◽  
Defect Formation ◽  
Ion Irradiation ◽  
Damage Zone ◽  
High Energy ◽  
Model Material ◽  
Dislocation Nucleation ◽  
Dislocation Loops ◽  
Experimental Conditions

In the present investigation, high-energy self-ion irradiation experiments (20 MeV Fe+4) were performed on two types of pure Fe samples to evaluate the formation of dislocation loops as a function of material volume. The choice of model material, namely EFDA pure Fe, was made to emulate experiments simulated with computational models that study defect evolution. The experimental conditions were an ion fluence of 4.25 and 8.5 × 1015 ions/cm2 and an irradiation temperature of 350 and 450 °C, respectively. First, the ions pass through the samples, which are thin films of less than 100 nm. With this procedure, the formation of the accumulated damage zone, which is the peak where the ions stop, and the injection of interstitials are prevented. As a result, the effect of two free surfaces on defect formation can be studied. In the second type of experiments, the same irradiations were performed on bulk samples to compare the creation of defects in the first 100 nm depth with the microstructure found in the whole thickness of the thin films. Apparent differences were found between the thin foil irradiation and the first 100 nm in bulk specimens in terms of dislocation loops, even with a similar primary knock-on atom (PKA) spectrum. In thin films, the most loops identified in all four experimental conditions were b ±a0<100>{200} type with sizes of hundreds of nm depending on the experimental conditions, similarly to bulk samples where practically no defects were detected. These important results would help validate computational simulations about the evolution of defects in alpha iron thin films irradiated with energetic ions at large doses, which would predict the dislocation nucleation and growth.

Secondary Defect Formation And Gettering in Mev Self-Implanted Silicon

1996 ◽  
Vol 439 ◽  
Author(s):  
R. A. Brown ◽  
O. Kononchuk ◽  
Z. Radzimski ◽  
G. A. Rozgonyi ◽  
F. Gonzalez
Keyword(s):  
Defect Formation ◽  
Extended Defects ◽  
Near Surface ◽  
Projected Range ◽  
Annealing Conditions ◽  
Float Zone ◽  
Transmission Electron ◽  
Secondary Defect ◽  
Secondary Ion

AbstractSecondary defect and impurity distributions in MeV self-implanted Czochralski (Cz) and float-zone (FZ) silicon have been investigated by transmission electron microscopy, optical microscopy with preferential chemical etching, and secondary ion mass spectroscopy. We found that the ion fluence and the oxygen content of the implanted wafers affect the number and depth distribution of extended defects remaining after annealing. Intrinsic oxygen also redistributes during annealing of Cz wafers, producing two regions of relatively high oxygen concentration: one at extended defects near the ion projected range, and another, shallower region, which correlates with the distribution of vacancy-type defects. Both of these regions are also able to getter metallic impurities, depending on the implantation and annealing conditions. These defect issues may adversely affect the quality of the near surface device region, and must be controlled for successful gettering by ion implantation.

Two-Dimensional Ordering of Ion Damaged Graphite

1983 ◽  
Vol 27 ◽  
Author(s):  
B.S. Elman ◽  
S. Dresselhaus ◽  
G. Braunstein ◽  
G. Dressflhaus ◽  
T. Venkatesan ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Pyrolytic Graphite ◽  
Two Dimensional ◽  
Complementary Information ◽  
Ion Channeling ◽  
The Third ◽  
Annealing Temperatures ◽  
Transmission Electron ◽  
Post Implantation

ABSTRACTPost implantation annealing of ion-damaged, highly oriented pyrolytic graphite (HOPG) has been studied by Raman spectroscopy, the ion channeling technique and Transmission Electron Microscopy. Complementary information obtained by these methods provides confirmation for the completion of the first step of graphitization of iondamaged graphite at annealing temperatures of ~2300°C. This is manifested by the formation of carbon planes with two dimensional ordering but no correlation in the third (c-axis) dimension.

The Effects of Rapid Recrystallization and Ion Implanted Carbon on The Solid Phase Epitaxial Regrowth of Si1−xGex Alloy Layers On Silicon

1995 ◽  
Vol 379 ◽  
Author(s):  
M.J. Antonell ◽  
T.E. Haynes ◽  
K.S. Jones
Keyword(s):  
Elevated Temperatures ◽  
Defect Formation ◽  
Solid Phase ◽  
Growth Front ◽  
Threading Dislocation ◽  
Time Resolved ◽  
Ion Channeling ◽  
Epitaxial Regrowth ◽  
Transmission Electron ◽  
Threading Dislocation Density

ABSTRACTTransmission electron microscopy has been combined with time-resolved reflectivity and ion channeling to study the effects of regrowth temperature and carbon introduction by ion implantation on the solid phase epitaxial regrowth (SPER) of strained 2000Å, Sio.88Ge0.12/Si alloy films grown by molecular-beam epitaxy (MBE). Relative to the undoped layers, carbon incorporation in the MBE grown SiGe layers prior to regrowth at moderate temperatures (500- 700°C) has three main effects on SPER; these include a reduction in SPER rate, a delay in the onset of strain-relieving defect formation, and a sharpening of the amorphous-crystalline (a/c) interface, i.e., promotion of a two-dimensional (planar) growth front.1 Recrystallization of amorphized SiGe layers at higher temperatures (1 100°C) substantially modifies the defect structure in samples both with and without carbon. At these elevated temperatures threading dislocations extend completely to the Si/SiGe interface. Stacking faults are eliminated in the high temperature regrowth, and the threading dislocation density is slightly higher with carbon implantation.

Secondary Defect Formation and Gettering in MeV Self-Implanted Silicon

1996 ◽  
Vol 438 ◽  
Author(s):  
R. A. Brown ◽  
O. Kononchuk ◽  
Z. Radzimski ◽  
G. A. Rozgonyi ◽  
F. Gonzalez
Keyword(s):  
Defect Formation ◽  
Extended Defects ◽  
Near Surface ◽  
Projected Range ◽  
Annealing Conditions ◽  
Float Zone ◽  
Transmission Electron ◽  
Secondary Defect ◽  
Secondary Ion

AbstractSecondary defect and impurity distributions in MeV self-implanted Czochralski (Cz) and float-zone (FZ) silicon have been investigated by transmission electron microscopy, optical microscopy with preferential chemical etching, and secondary ion mass spectroscopy. We found that the ion fluence and the oxygen content of the implanted wafers affect the number and depth distribution of extended defects remaining after annealing. Intrinsic oxygen also redistributes during annealing of Cz wafers, producing two regions of relatively high oxygen concentration: one at extended defects near the ion projected range, and another, shallower region, which correlates with the distribution of vacancy-type defects. Both of these regions are also able to getter metallic impurities, depending on the implantation and annealing conditions. These defect issues may adversely affect the quality of the near surface device region, and must be controlled for successful gettering by ion implantation.

Annealing Of Radiation Damage in Tungsten

1970 ◽  
Vol 28 ◽  
pp. 412-413
Author(s):  
Robert C. Rau ◽  
John Moteff
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Radiation Damage ◽  
Thermal Annealing ◽  
Neutron Fluence ◽  
Dislocation Loops ◽  
Defect Clusters ◽  
Polycrystalline Tungsten ◽  
Transmission Electron ◽  
Radiation Induced

Transmission electron microscopy has been used to study the thermal annealing of radiation induced defect clusters in polycrystalline tungsten. Specimens were taken from cylindrical tensile bars which had been irradiated to a fast (E > 1 MeV) neutron fluence of 4.2 × 1019 n/cm2 at 70°C, annealed for one hour at various temperatures in argon, and tensile tested at 240°C in helium. Foils from both the unstressed button heads and the reduced areas near the fracture were examined.Figure 1 shows typical microstructures in button head foils. In the unannealed condition, Fig. 1(a), a dispersion of fine dot clusters was present. Annealing at 435°C, Fig. 1(b), produced an apparent slight decrease in cluster concentration, but annealing at 740°C, Fig. 1(C), resulted in a noticeable densification of the clusters. Finally, annealing at 900°C and 1040°C, Figs. 1(d) and (e), caused a definite decrease in cluster concentration and led to the formation of resolvable dislocation loops.

(111) Monocrystalline Nickel Films

1972 ◽  
Vol 30 ◽  
pp. 512-513
Author(s):  
T.E. Pratt ◽  
R.W. Vook
Keyword(s):  
Film Thickness ◽  
Deposition Rate ◽  
Room Temperature ◽  
Narrow Range ◽  
High Vacuum ◽  
Residual Pressure ◽  
Temperature Dependent ◽  
Deposition Parameters ◽  
Transmission Electron ◽  
Substrate Temperatures

(111) oriented thin monocrystalline Ni films have been prepared by vacuum evaporation and examined by transmission electron microscopy and electron diffraction. In high vacuum, at room temperature, a layer of NaCl was first evaporated onto a freshly air-cleaved muscovite substrate clamped to a copper block with attached heater and thermocouple. Then, at various substrate temperatures, with other parameters held within a narrow range, Ni was evaporated from a tungsten filament. It had been shown previously that similar procedures would yield monocrystalline films of CU, Ag, and Au.For the films examined with respect to temperature dependent effects, typical deposition parameters were: Ni film thickness, 500-800 A; Ni deposition rate, 10 A/sec.; residual pressure, 10-6 torr; NaCl film thickness, 250 A; and NaCl deposition rate, 10 A/sec. Some additional evaporations involved higher deposition rates and lower film thicknesses.Monocrystalline films were obtained with substrate temperatures above 500° C. Below 450° C, the films were polycrystalline with a strong (111) preferred orientation.

Black-white contrast of dislocation loops

1978 ◽  
Vol 36 (1) ◽  
pp. 328-329
Author(s):  
J. J. Hren ◽  
W. D. Cooper ◽  
L. J. Sykes
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Dislocation Loops ◽  
Major Premise ◽  
Burgers Vector ◽  
Transmission Electron ◽  
Primary Means ◽  
Contrast Analysis ◽  
Dot Product ◽  
Imaging Conditions

Small dislocation loops observed by transmission electron microscopy exhibit a characteristic black-white strain contrast when observed under dynamical imaging conditions. In many cases, the topography and orientation of the image may be used to determine the nature of the loop crystallography. Two distinct but somewhat overlapping procedures have been developed for the contrast analysis and identification of small dislocation loops. One group of investigators has emphasized the use of the topography of the image as the principle tool for analysis. The major premise of this method is that the characteristic details of the image topography are dependent only on the magnitude of the dot product between the loop Burgers vector and the diffracting vector. This technique is commonly referred to as the (g•b) analysis. A second group of investigators has emphasized the use of the orientation of the direction of black-white contrast as the primary means of analysis.

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