A Review of Recent Results on Single Crystal Metastable Semiconducfors: Crystal Growth, Phase Stability, and Physical Properties

1984 ◽  
Vol 37 ◽  
Author(s):  
S. A. Barnett ◽  
B. Kramer ◽  
L. T. Romano ◽  
S. I. Shah ◽  
M. A. Ray ◽  
...  
Keyword(s):  
Physical Properties ◽  
Single Crystal ◽  
Film Growth ◽  
Critical Role ◽  
Range Order ◽  
X Ray Diffraction ◽  
Ion Energy ◽  
Preferential Sputtering ◽  
Pseudobinary Phase Diagram ◽  
Semiconducting Alloys

AbstractRecent results on metastable semiconducting alloys, concerning in particular the growth of new Sn-based alloys (GaSb)1−x(Sn2)x and Gel−xSnx and the physical properties of (GaAs)1−x(Ge2)x and (GaSb)1−x(Ge2)x, are discussed. (GaSb)1−x(Sn2)x and Ge1−xSnx alloy films were grown with x-values as high as 0.20 and 0.15, respectively, well in excess of equilibrium Sn solid solubility limits (<1%) while epitaxial (GaAs)1−x(Ge2) and (GaSb)1−x(Ge2)x alloys were obtained on (100) GaAs at compositions ranging across the pseudobinary phase diagram. Low energy ion bombardment induced collisional mixing and preferential sputtering during film growth played a critical role in obtaining single phase alloys. An optimal ion energy, which depended on the ion flux and the alloy composition, was determined, allowing in most cases growth at temperatures T, sufficient for obtaining single crystal alloys on (100) GaAs and (100) Ge substrates. Decomposition of the Sn-based alloys occurred above a critical Ts- value via α-Sn-rich precipitates which were stable above the β-Sn melting point. X-ray diffraction, STEM, EXAFS, and Raman spectroscopy measurements, performed on single crystal (GaAs)1−x(Ge2)x and (GaSb)1−x(Ge2)x alloys, indicate that there is a transition in the long-range order from zincblende to diamond with increasing x while the short-range order remains perfect at all compositions, i.e. no V-V or III-Ill bonds are observed. These results are discussed in light of recent models which relate (GaAs)1−x(Ge2)x atomic structure to its band structure and optical properties.

scholarly journals Irradiated cubic single crystal SiC as a high temperature sensor

2003 ◽  
Vol 792 ◽  
Author(s):  
Alex A. Volinsky ◽  
Lev Ginzbursky
Keyword(s):  
Single Crystal ◽  
Film Growth ◽  
Space Shuttle ◽  
Turbine Blades ◽  
Maximum Temperature ◽  
X Ray Diffraction ◽  
Ceramic Tiles ◽  
X Ray ◽  
Single Crystal Sic ◽  
Technology Modeling

ABSTRACTRadiation is known to cause point defects formation in different materials. In the case of cubic SiC single crystal radiation flux on the order of 2·1020 neutrons/cm2 at 0.18 MeV causes over 3% volume lattice expansion. Radiation-induced strain (measurable by X-Ray diffraction) can be relieved when the annealing temperature exceeds the temperature of irradiation. Based on this effect the original technology of maximum temperature measurement was developed a while ago. Single crystal SiC sensor small size (200–500 microns), wide temperature range (150–1450 °C), “no-lead” installation, and exceptional accuracy make it very attractive for use in small, rotating and “hard-to-access” parts, including, but not limited to gas turbine blades, space shuttle ceramic tiles, automobile engines, etc. With the advances in X-Ray diffraction measurements, crystal and thin film growth techniques, it is the time to revise and update this technology. Modeling radiation damage, as well as annealing effects are also beneficial.

scholarly journals Investigation on Thermo-physical Properties of L-Valinium Picrate Single Crystal for Modern Applications

2021 ◽  
Author(s):  
M Manivannan ◽  
S. Balachandar ◽  
M. Jose ◽  
S A Martin Britto Dhas
Keyword(s):  
Heat Capacity ◽  
Thermal Diffusivity ◽  
Physical Properties ◽  
Single Crystal ◽  
Specific Heat ◽  
Specific Heat Capacity ◽  
Thermal Effusivity ◽  
X Ray Diffraction ◽  
X Ray ◽  
Thermo Physical Properties

Abstract Good quality L-valinium picrate single crystal was grown by slow evaporation technique. The lattice parameters of the crystal were measured by single crystal X-ray diffraction analysis. The High resolution X-ray diffraction study reveals good crystalline perfection of the grown crystals. The thermal diffusivity and specific heat capacity were experimentally measured using photoacoustic technique and standard DSC technique, respectively. The thermo physical properties such as thermal conductivity, thermal diffusivity, specific heat capacity, volumetric specific heat capacity, and thermal effusivity of LVP are reported for the first time at ambient temperature.

The Structure and Physical Properties of μ-oxo-bis{oxotrichloro(O-perrhenylchloride)rhenium(VI)}, and the Non-existence of β-ReOCl3

1972 ◽  
Vol 50 (22) ◽  
pp. 3607-3618 ◽  
Author(s):  
C. Calvo ◽  
P. W. Frais ◽  
C. J. L. Lock
Keyword(s):  
Oxygen Atom ◽  
Infrared Spectrum ◽  
Physical Properties ◽  
Single Crystal ◽  
Least Squares ◽  
X Ray Diffraction ◽  
Full Matrix ◽  
Weak Bond ◽  
X Ray ◽  
Chloride Molecule

The compound previously reported as β-ReOCl3 has been shown by analysis and single crystal X-ray diffraction to be μ-oxo-bis{oxotrichloro(O-perrhenyl chloride)rhenium(VI)}, (Re2O3Cl6)(ReO3Cl)2. The crystals were triclinic, a = 6.112(5), b = 12.876(9), c = 6.020(5) Å, α = 88.30(5), β = 95.88(5), γ = 105.36(5)°, [Formula: see text]. Intensities were measured by a densitometer from photographs recorded on an integrating precession camera. The structure was refined by full matrix least squares to give a final R2 of 0.072. The molecule is composed of a dimeric Re2O3Cl6 unit with a bridging oxygen atom on the center of symmetry and an Re—O (bridge) distance of 1.847(1) Å. The remaining oxo-group on each rhenium is cis to the bridge and is strongly bonded (1.69(2) Å), and the position trans to the terminal oxo-group is filled by a weak bond to an oxygen atom of a perrhenyl chloride molecule. The infrared spectrum of the compound has been explained in terms of the structure.

A quinoxaline-fused tetrathiafulvalene derivative and its semiconducting charge-transfer salt: synthesis, crystal structures and physical properties

2014 ◽  
Vol 38 (5) ◽  
pp. 2052-2057 ◽  
Author(s):  
Yan Geng ◽  
Christoph Fiolka ◽  
Karl Krämer ◽  
Jürg Hauser ◽  
Vladimir Laukhin ◽  
...  
Keyword(s):  
Crystal Structure ◽  
Charge Transfer ◽  
Physical Properties ◽  
Single Crystal ◽  
Crystal Structures ◽  
Single Crystal Structure ◽  
X Ray Diffraction ◽  
X Ray ◽  
Donor Acceptor ◽  
Tetrathiafulvalene Derivative

A quinoxaline-fused tetrathiafulvalene (TTF) derivative 1 has been synthesized to form a compact and planar π-conjugated donor–acceptor (D–π–A) ensemble, and its single crystal structure has been determined by X-ray diffraction.

Single Crystal Investigation and Physical Properties of the Binary Compound CeB4

2007 ◽  
Vol 62 (7) ◽  
pp. 896-900 ◽  
Author(s):  
Volodymyr Babizhetskyy ◽  
Arndt Simon ◽  
Kurt Hiebl
Keyword(s):  
Electrical Resistivity ◽  
Physical Properties ◽  
Single Crystal ◽  
Structure Type ◽  
Binary Compound ◽  
X Ray Diffraction ◽  
Space Group ◽  
X Ray ◽  
Resistivity Measurements ◽  
Cerium Atom

Abstract The structure of CeB4 has been determined by single crystal X-ray diffraction. The compound crystallizes in the ThB4 structure type (space group P4/mbm, a = 7.2034(8), c = 4.1006(5) Å; 270 reflections with Fo ≥ 4σ (Fo), R1 = 0.023, wR2 = 0.052). The results of the magnetic and electrical resistivity measurements indicate a strong f-d hybridization of the 4 f electrons of the cerium atom

Structural Control of Epitaxially Grown Sputtered Perovskite Thin Films

1995 ◽  
Vol 401 ◽  
Author(s):  
Kiyotaka Wasa ◽  
Toshifumi Sato ◽  
Hideaki Adachi ◽  
Kentaro Setsune ◽  
S. Trolier-McKinstry ◽  
...  
Keyword(s):  
Thin Films ◽  
Single Crystal ◽  
Structural Control ◽  
Film Growth ◽  
Substrate Surface ◽  
Epitaxial Films ◽  
Crystal Phase ◽  
X Ray Diffraction ◽  
Force Microscopy ◽  
Atomic Force

AbstractThin films of perovskite Pb–Ti–O3 families were heteroepitaxially grown by sputtering on (0001)sapphire and/or (001)SrTiO (ST). These epitaxial films contained microstructures, although X–ray diffraction analysis suggested formation of single crystal phase with three dimentional crystal orientation. Their microstructures were studied by the electron microscopy, atomic force microscopy, and spectroscopic ellipsometry so as to find factors which influence the formation of the microstructure. It was found that the orientation of the substrate surface and the chemical composition of adatoms during initial film growth strongly affected the formation of the microstructures. Sputtered PbTiO3 (PT) thin films under a stoichiometric condition on a miscut(001) ST(miscut 1.7 degree) realized the growth of continuous single crystal thin films of 10–100nm thick with extremely smooth surface with surface roughness less than 3nm. Deposition on a miscut substrate under a stoichiometric condition is essential to make continuous thin films of perovskite of single crystal phase.

scholarly journals Crystal Growth and Physical Properties of Sr4Co3O7.5+xCl2 Single Crystals (x ∼ 0.14)

Crystals ◽  
2019 ◽  
Vol 9 (12) ◽  
pp. 623
Author(s):  
Gihun Ryu ◽  
Zhiwei Hu ◽  
Chun-Fu Chang ◽  
Chang-Yang Kuo ◽  
K. Shin ◽  
...  
Keyword(s):  
Crystal Growth ◽  
Physical Properties ◽  
Single Crystal ◽  
Single Crystal Growth ◽  
Two Dimensional ◽  
X Ray Diffraction ◽  
Flux Method ◽  
X Ray ◽  
Triple Layer ◽  
X Ray Absorption

We report on the single crystal growth and physical properties of the triple-layer cobalt oxychloride Sr 4 Co 3 O 7 . 5 + x Cl 2 (x∼ 0.14) with 4-3-10 Ruddlesden–Popper type structure that was synthesized by a KCl-SrCl 2 flux method. The crystal structure was determined by means of single crystal X-ray diffraction. In this quasi two dimensional (2D) material two pyramidal CoO 5 layers and a central Co oxide layer with random oxygen deficiencies are forming the layered Co oxide blocks. These blocks are separated by Cl − -ions which are interacting via Van der Waals forces, thus, enhancing the quasi 2D nature of this compound. The soft X-ray absorption spectra at the Co-L 2 , 3 edge and O-K edge indicate that Co ions are in high spin +3 state which is in agreement with the single crystal X-ray diffraction measurements that indicate basically pyramidal oxygen environments for the Co 3 + ions in this compound.

The Preparation, Physical Properties, and Structure of Oxotetrachloroaquorhenium(VI), ReOCl4(OH2)

1972 ◽  
Vol 50 (12) ◽  
pp. 1811-1818 ◽  
Author(s):  
P. W. Frais ◽  
C. J. L. Lock
Keyword(s):  
Molecular Structure ◽  
Infrared Spectroscopy ◽  
Physical Properties ◽  
Single Crystal ◽  
Least Squares ◽  
Intensity Data ◽  
X Ray Diffraction ◽  
Full Matrix ◽  
X Ray ◽  
First Time

Oxotetrachloroaquorhenium(VI), ReOCl4•H2O, has been prepared and characterized for the first time by analysis, infrared spectroscopy and single crystal X-ray diffraction. The crystals were orthorhombic, a = 10.834(8), b = 11.089(8), c = 5.517(4) Å, Pn21a, Z = 4. Intensity data were recorded by integrating film methods and measured with a Joyce–Loebl microdensitometer, and 624 observable of the 704 measured independent reflections were given non-zero weight in the final cycle of full matrix least-squares refinement where R1 = 0.0572 and R2 = 0.0687. The molecular structure is based on a very distorted octahedron with a strongly bonded oxo-group (Re—O, 1.63(2) Å) trans (177(2)°) to a weakly bonded aquo-group (Re—O, 2.27 (2) Å). The Re—Cl distances do not differ significantly (2.29(1) Å av). The chlorine atoms are bent away from the oxo-group (angles vary from (94–102°(1)).

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