Measurement and Control of The Indium Composition Profile Near The InGaAs on GaAs Interface During Mbe
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ABSTRACTThe compositional abruptness at both the normal and the inverted InGaAs/Ga(Al)As interface is inherently limited by the surface segregation of In atoms during molecular beam epitaxy. We find, for example, that the intended alloy composition in In0.22Ga0.78As layers is not reached until nearly 35 Å from the normal InGaAs on GaAs interface for growth at 500 °C. We propose and demonstrate a scheme to control and eliminate the compositionally graded region at the normal interface by the artificial formation of an In surface segregated layer (predeposition) prior to the growth of InGaAs.
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1985 ◽
Vol 43
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pp. 368-369
1995 ◽
Vol 34
(Part 1, No. 9A)
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pp. 4593-4598
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1999 ◽
Vol 4
(S1)
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pp. 858-863
2005 ◽
Vol 23
(4)
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pp. 1814
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1997 ◽
Vol 175-176
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pp. 229-233
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2000 ◽
Vol 18
(3)
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pp. 1579
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