Effect of Surface and Grain-Boundary Diffusion on Interconnect Reliability

1995 ◽  
Vol 391 ◽  
Author(s):  
L. M. Klinger ◽  
E. E. Glickman ◽  
V. E. Fradkov ◽  
W. W. Mullins ◽  
C. L. Bauer
Keyword(s):  
Grain Size ◽  
Steady State ◽  
Grain Boundary ◽  
Boundary Diffusion ◽  
Grain Boundary Diffusion ◽  
Polycrystalline Materials ◽  
Interconnect Reliability ◽  
The Stability ◽  
Boundary Flux ◽  
Effect Of Surface

AbstractThe effect of surface and grain-boundary diffusion on interconnect reliability is addressed by extending the theory of thermal grooving to arbitrary grain-boundary flux. For a periodic array of grain boundaries, three regimes are identified: (1) equilibrium, (2) global steady state, and (3) local steady state. These regimes govern the stability of polycrystalline materials subjected to large electric (electromigration) or mechanical (stress voiding) fields, especially in thin films where grain size approximates film thickness.

scholarly journals Molecular Dynamics Simulation on Creep Behavior of Nanocrystalline TiAl Alloy

Nanomaterials ◽  
2020 ◽  
Vol 10 (9) ◽  
pp. 1693
Author(s):  
Fei Zhao ◽  
Jie Zhang ◽  
Chenwei He ◽  
Yong Zhang ◽  
Xiaolei Gao ◽  
...  
Keyword(s):  
Molecular Dynamics ◽  
Grain Size ◽  
Steady State ◽  
High Temperature ◽  
Grain Boundary ◽  
Tial Alloy ◽  
Boundary Diffusion ◽  
Dislocation Motion ◽  
High Temperature Creep ◽  
Creep Stage

TiAl alloy represents a new class of light and heat-resistant materials. In this study, the effect of temperature, pressure, and grain size on the high-temperature creep properties of nanocrystalline TiAl alloy have been studied through the molecular dynamics method. Based on this, the deformation mechanism of the different creep stages, including crystal structure, dislocation, and diffusion, has been explored. It is observed that the high-temperature creep performance of nanocrystalline TiAl alloy is significantly affected by temperature and stress. The higher is the temperature and stress, the greater the TiAl alloy’s steady-state creep rate and the faster the rapid creep stage. Smaller grain size accelerates the creep process due to the large volume fraction of the grain boundary. In the steady-state deformation stage, two kinds of creep mechanisms are manly noted, i.e., dislocation motion and grain boundary diffusion. At the same temperature, the creep mechanism is dominated by the dislocation motion in a high-stress field, and the creep mechanism is dominated by the diffusion creep in the low-stress field. However, it is observed to be mainly controlled by the grain boundary diffusion and lattice diffusion in the rapid creep stage.

The stability of triple junctions during the grain boundary diffusion process

1996 ◽  
Vol 3 (4) ◽  
Author(s):  
E. Rabkin ◽  
W. Gust ◽  
L.S. Shvindlerman ◽  
A.N. Aleshin
Keyword(s):  
Grain Boundary ◽  
Diffusion Process ◽  
Boundary Diffusion ◽  
Grain Boundary Diffusion ◽  
Triple Junctions ◽  
The Stability

Analysis of Creep Deformation Due to Grain-Boundary Diffusion/Sliding

2007 ◽  
Vol 345-346 ◽  
pp. 565-568
Author(s):  
Byung Nam Kim ◽  
Keijiro Hiraga ◽  
Koji Morita ◽  
Hidehiro Yoshida
Keyword(s):  
Grain Size ◽  
Creep Rate ◽  
Grain Boundary ◽  
Boundary Diffusion ◽  
Effective Diffusion ◽  
High Viscosity ◽  
Grain Boundary Sliding ◽  
Grain Boundary Diffusion ◽  
Grain Sizes ◽  
Boundary Sliding

For steady-state deformation caused by grain-boundary diffusion and viscous grain-boundary sliding, the creep rate of regular polyhedral grains is analyzed by the energy-balance method. For the microstructure, the grain-grain interaction increases the degree of symmetry of diffusional field, resulting in a decrease of the effective diffusion distance. Meanwhile, the viscous grain-boundary sliding is found to decrease the creep rate. The present analysis reveals that the grain-size exponent is dependent on the grain size and the grain-boundary viscosity: the exponent becomes unity for small grain sizes and/or high viscosity, while it is three for large grain sizes and/or low viscosity.

Structure and Properties of Polycrystalline Materials From Simulation: An Interfacial Perspective

1999 ◽  
Vol 586 ◽  
Author(s):  
S. R. Phillpot ◽  
P. Keblinski ◽  
D. Wolf ◽  
F. Cleri
Keyword(s):  
Grain Boundary ◽  
Grain Boundaries ◽  
Boundary Diffusion ◽  
Simulation Method ◽  
High Energy ◽  
Grain Boundary Diffusion ◽  
Dynamics Simulation ◽  
Polycrystalline Materials ◽  
Diffusion Creep ◽  
Fcc Metals

ABSTRACTWe have recently developed a novel molecular-dynamics simulation method to grow polycrystals from a melt containing randomly oriented crystalline seeds. The resulting microstructures contain only randomly oriented (i.e., high-energy) grain boundaries. We find that these grain boundaries, which are highly constrained by their close proximity to grain junctions, are highly disordered in fcc metals and amorphous in silicon. From simulations of infinitely extended high-energy grain boundaries in bicrystals, we find that such highly disordered and amorphous grain boundaries are actually the thermodynamic ground state; by contrast, low-energy grain boundaries are crystalline. High-energy grain boundaries in diamond, however, are structurally ordered at the expense of a significant amount of graphite-like bonding. We show that these complex grain boundary structures have important effects on properties including grain boundary diffusion (fcc metals and silicon), grain boundary diffusion creep (silicon) and grain boundary electrical activity and strength (diamond). The implications for engineering materials with prescribed properties are discussed.

The influence of grain size on the grain boundary diffusion

1974 ◽  
Vol 24 (3) ◽  
pp. 343-346 ◽  
Author(s):  
Z. Knésl ◽  
J. Jinoch ◽  
Z. Bílek
Keyword(s):  
Grain Size ◽  
Grain Boundary ◽  
Boundary Diffusion ◽  
Grain Boundary Diffusion

Boron Diffusion in Polycrystalline Silicon

1986 ◽  
Vol 76 ◽  
Author(s):  
Moustafa Y. Ghannam ◽  
Robert W. Dutton ◽  
Steven W. Novak
Keyword(s):  
Grain Size ◽  
Diffusion Coefficient ◽  
Grain Boundary ◽  
Grain Boundaries ◽  
Polycrystalline Silicon ◽  
Boundary Diffusion ◽  
Crystalline Silicon ◽  
Unit Area ◽  
Grain Boundary Diffusion ◽  
Boron Diffusion

ABSTRACTThe diffusion of boron in ion implanted LPCVD polycrystalline silicon is shown to be dominated by grain boundary diffusion at low and moderate concentrations. The diffusion coefficient is 2 to 3 orders of magnitude larger than its value in crystalline silicon. In preannealed polysilicon, the boron diffusion coefficient is found to be 30% smaller than in polysilicon annealed after implantation. This reflects the effect of the grain size in the diffusion coefficient since preannealed polysilicon has larger grains and smaller density of grain boundaries per unit area.

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