Nitriding of Zirconia by Irradiation with NdrYAG Laser Beam

1995 ◽  
Vol 397 ◽  
Author(s):  
S. Fujitsu ◽  
M. Sawai ◽  
K. Kawamura ◽  
H. Hosono
Keyword(s):  
Laser Beam ◽  
Mass Spectroscopy ◽  
Nd:Yag Laser ◽  
Zirconium Nitride ◽  
X Ray Diffraction ◽  
Stabilized Zirconia ◽  
Zirconia Ceramics ◽  
Partially Stabilized Zirconia ◽  
X Ray ◽  
Secondary Ion

ABSTRACTThe surface of partially stabilized zirconia ceramics was irradiated by a Nd:YAG laser in various atmospheres. Zirconia strongly absorbed YAG's laser beam and changed its chemistry and microstructure. The change of color of zirconia into gold was due to the formation of zirconium nitride (ZrN) observed on the irradiated surface in air, nitrogen or ammonia, which was confirmed by X-ray diffraction and secondary ion mass spectroscopy. The observed ZrN phase was 10-20 um in thickness at the irradiated area by the direct beam. The adhesion between formed ZrN and YSZ substrate was very weak.

Nitriding of yttria-stabilized zirconia in atmospheric pressure microwave plasma

2009 ◽  
Vol 24 (6) ◽  
pp. 2021-2028 ◽  
Author(s):  
R. Milani ◽  
R.P. Cardoso ◽  
T. Belmonte ◽  
C.A. Figueroa ◽  
C.A. Perottoni ◽  
...  
Keyword(s):  
Photoelectron Spectroscopy ◽  
Atmospheric Pressure ◽  
Microwave Plasma ◽  
Plasma Nitriding ◽  
Nitrided Layer ◽  
Zirconium Nitride ◽  
Stabilized Zirconia ◽  
Partially Stabilized Zirconia ◽  
X Ray ◽  
Yttria Partially Stabilized Zirconia

High temperature plasma nitriding of yttria-partially-stabilized zirconia in atmospheric pressure microwave plasma was investigated. The morphological, mechanical, and physicochemical characteristics of the resulting nitrided layer were characterized by different methods, such as optical and scanning electron microscopy, microindentation, x-ray diffraction, narrow resonant nuclear reaction profiling, secondary neutral mass spectrometry, and x-ray photoelectron spectroscopy, aiming at investigating the applicability of this highly efficient process for nitriding of ceramics. The structure of the plasma nitrided layer was found to be complex, composed of tetragonal and cubic zirconia, as well as zirconium nitride and oxynitride. The growth rate of the nitrided layer, 4 µm/min, is much higher than that obtained by any other previous nitriding process, whereas a typical 50% increase in Vickers hardness over that of yttria-partially-stabilized zirconia was observed.

Synthesis and Structural Studies of Microporous Yttria-Stabilized Zirconia Ceramics

1996 ◽  
Vol 431 ◽  
Author(s):  
R. Srinivasan ◽  
D. E. Sparks ◽  
D. R. Milburn ◽  
B. H. Davis
Keyword(s):  
Pore Size Distribution ◽  
Pore Size ◽  
Diffraction Data ◽  
Yttria Stabilized Zirconia ◽  
Structural Studies ◽  
X Ray Diffraction ◽  
Stabilized Zirconia ◽  
Zirconia Ceramics ◽  
Narrow Pore Size Distribution ◽  
X Ray

AbstractYttria-stabilized zirconia was prepared by (i) coprecipitation and (ii) alkoxide hydrolysis. The thermal and X-ray diffraction data were compared. The coprecipitation method yields microporous materials after calcination at 500°C for 4 hours with a narrow pore size distribution at a radius of 2–2.5 nm. Similar results were also seen with the alkoxide hydrolysis.

Study of Molybdenum-Alusil Interdiffusion Kinetics and Contact Resistance for VLSI Applications

1985 ◽  
Vol 54 ◽  
Author(s):  
R. N. Singh ◽  
D. M. Brown ◽  
M. J. Kim ◽  
G. A. Smith
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Contact Resistance ◽  
Mass Spectroscopy ◽  
X Ray Diffraction ◽  
Compound Formation ◽  
X Ray ◽  
Interdiffusion Kinetics ◽  
Secondary Ion ◽  
Complete Transformation

ABSTRACTInterdiffusion barrier characteristics of molybdenum thin films with Alusil(Al-1% Si) is studied between 733 and 7 63 K via sheet and contact resistance measurements, Rutherford backseattering spectrometry, secondary ion mass spectroscopy, and x-ray diffraction analysis. The results indicate that thermal annealing of Mo/Alusil thin film couples leads to MoAl compound formation initially as a nonplanar front, but extensive annealing results in complete transformation of Alusil to MoAl12 and a significant increase in contact resistance. The interdiffusion kinetics is studied and implications of these observations to VLSI device characteristics is discussed. Based on these results a safe time-temperature processing regime is proposed.

High Quality GaP Growth on Si Substrates By Mocvd

1988 ◽  
Vol 116 ◽  
Author(s):  
K. Uchida ◽  
Y. Kohama ◽  
M. Tajima ◽  
T. Soga ◽  
T. Jimbo ◽  
...  
Keyword(s):  
Mass Spectroscopy ◽  
Diffraction Peak ◽  
Crystal Quality ◽  
X Ray Diffraction ◽  
High Quality ◽  
Double Crystal ◽  
X Ray ◽  
Si Substrates ◽  
Secondary Ion

AbstractGaP crystals are grown on Si substrates by MOCVD. Double crystal X-ray diffraction indicates that the crystal quality of GaP layers greatly improves when AsH3 is supplied before growth. The FWHM of (400) diffraction peak of the GaP layer decreases as the thickness increases and the best FWHM of 112.5 arcs is obtained at a thickness of 5 μm. The GaP/Si interface is characterized using secondary ion mass spectroscopy (SIMS) to demonstrate the effect of AsH3.

Microstructure and Phase Composition of (Ce, Mg)-PSZ Ceramics

2007 ◽  
Vol 336-338 ◽  
pp. 1194-1196
Author(s):  
Zhi Ping Shen ◽  
Shu Cai ◽  
Zhen Dong
Keyword(s):  
Heat Treatment ◽  
Phase Composition ◽  
Monoclinic Phase ◽  
Processing Method ◽  
Nanoporous Structure ◽  
X Ray Diffraction ◽  
Stabilized Zirconia ◽  
Partially Stabilized Zirconia ◽  
X Ray ◽  
Heat Treated

Magnesia, ceria partially stabilized zirconia (Ce,Mg)-PSZ ceramics with net shape microstructure are prepared using a processing method similar to that of conventional Mg-PSZ ceramics, then heat-treated at 1500°C for different time. Microstructure and phase composition of (Ce, Mg)-PSZ samples with different amount of CeO2 doped were investigated using SEM and X-ray diffraction. The addition of CeO2 could impede the formation of monoclinic phase and inhibit the growth of cubic grains. A microstructure with net-shape cubic grains, in which tetragonal precipitates interweave to a nanoporous structure is obtained by adding 4∼8 mol% CeO2 in 10mol% MgO doped zirconia matrix and then heat treatment at 1500°C for different time. The precipitate morophology might be related with the addition of CeO2 and the heat treatment temperatures.

Effect of Ar Sputtering Pretreatment on the Electromigration Resistance in Al-Cu/TiN/Ti Interconnects

1998 ◽  
Vol 516 ◽  
Author(s):  
L.P. Wang ◽  
A. Chuang ◽  
L.T. Lin ◽  
F.S. Huang ◽  
K. Perng ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Mass Spectroscopy ◽  
Concentration Distribution ◽  
Auger Electron ◽  
Elemental Concentration ◽  
X Ray Diffraction ◽  
X Ray ◽  
Peak Intensity ◽  
Secondary Ion ◽  
A Current

AbstractThe 1 µm-wide Al-0.5wt%Cu/TiN/Ti interconnect, on the oxidized Si(100) wafer without Al sputtering pretreatment on the SiO2 surface prior to Ti deposition, failed after stressing with a current density of 1 × 106 A/cm2 for 190 hr at 175°C. In contrast, the interconnect with Ar sputtering pretreatment did not fail after stressing under the same condition for 550 hr. X-ray diffraction spectra indicated that the Ar sputtering pretreatment lowered Al(111) peak intensity down to 1/46 of its magnitude. This result suggests that the improvement of electromigration resistance by Ar sputtering pretreatment is not due to Al(111) texture, which is opposite to the result of Shibata et al. (Jpn. J. Appl. 32, 4479 (1993)). The elemental concentration distribution in depth was characterized on Al-Cu/TiN/Ti multilayers with and without Ar sputtering pretreatment by using secondary ion mass spectroscopy and Auger electron microscopy. A fairly large amount of oxygen and nitrogen was found to segregate near the Al-Cu/TiN interface. The phenomenon associated with the large amount of segregated oxygen and nitrogen is attributed to the enhancement of electromigration resistance.

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