Excimer Laser Induced Photolytic Deposition of Aluminum Nitride: Ftlm Growth and Properties

1995 ◽  
Vol 397 ◽  
Author(s):  
G. Radhakrishnan ◽  
P.M. Adams ◽  
N. Marquez
Keyword(s):  
Electron Microscopy ◽  
Aluminum Nitride ◽  
Substrate Temperature ◽  
Gas Phase ◽  
Excimer Laser ◽  
Film Growth ◽  
Aln Film ◽  
Fused Quartz ◽  
Photolysis Laser ◽  
193 Nm

ABSTRACTExcimer laser photolysis has been used for the growth of smooth and well-adhering thin films of aluminum nitride (AlN) on Si, fused quartz, and KBr substrates at temperatures as low as 350 K. The photolysis was carried out at 193 nm, with the laser beam propagating parallel to the substrate. Trimethylamine alane and ammonia were used as gas-phase precursors. The growth rate of these films was investigated as a function of laser fluence. These measurements, as well as other investigations of film growth with and without the photolysis laser, reveal that no AlN film is produced in the absence of laser-induced photolysis of the precursors. The morphology and physical properties of these laser-grown films have been studied by scanning electron microscopy, X-ray diffraction, and transmission electron microscopy. Optical absorption spectra of films grown on fused quartz were measured as a function of substrate temperature. A substrate temperature of 350 K was found to be optimum for obtaining good film quality while precluding any effects due to the thermal decomposition of the precursors. The films have excellent dielectric properties as shown by I-V and C-V measurements. The details of AlN film growth using low-temperature gas-phase photolysis at 193 nm and the characterization of these laser grown films will be discussed.

Excimer laser-assisted etching of polysilicon at 193 nm

1987 ◽  
Vol 2 (6) ◽  
pp. 895-901 ◽  
Author(s):  
M. D. Armacost ◽  
S. V. Babu ◽  
S. V. Nguyen ◽  
J. F. Rembetski
Keyword(s):  
Gas Phase ◽  
Excimer Laser ◽  
Cross Section ◽  
Thermal Effects ◽  
Etch Rate ◽  
Sem Analysis ◽  
Surface Roughening ◽  
193 Nm ◽  
Limiting Value ◽  
Scanning Electron

Excimer laser-assisted etching of polysilicon at 193 nm was studied in the presence of CF3Br, CF2Cl2, and NF3. In the presence of 193 nm radiation, CF3Br showed some propensity to etch polysilicon, while CF2Cl2 did not show any appreciable etching. In the presence of NF3, maximum etch rates of 0.6 Å/pulse were obtained for pressures greater than 500 Torr and fluences exceeding 200 mJ/(cm2 pulse). The etch rate increased with both fluences and pressure to a limiting value of 0.6 Å/pulse. An adsorptive etch mechanism was proposed, where NF3 molecules diffuse to the surface, adsorb, and then react after absorbing laser radiation. Thermal effects enhance this process and appear to dominate at lower pressures (<400 Torr) and higher fluences. Etching caused by the gas phase formation of F atoms is minimal due to the low absorption cross section of NF3 at 193 nm. Etching of submicron profiles in polysilicon was also examined. Polysilicon samples masked by patterned SiO2 were exposed to NF3 and 193 nm ArF radiation. Subsequent scanning electron microscopy (SEM) analysis demonstrated directional etching with some surface roughening.

First Principles Prediction of Gas-Phase Composition and Substrate Temperature for Diamond Film Growth

2000 ◽  
Vol 25 (1-2) ◽  
pp. 41-51 ◽  
Author(s):  
Yanxin Li ◽  
Donald W. Brenner ◽  
Xialan Dong ◽  
Chiachung Sun
Keyword(s):  
Phase Composition ◽  
Substrate Temperature ◽  
Gas Phase ◽  
Diamond Film ◽  
First Principles ◽  
Film Growth ◽  
Diamond Film Growth

scholarly journals Effects of Substrate Temperature on Fe-N Film-Growth Using Excimer Laser Ablation.

1995 ◽  
Vol 19 (2) ◽  
pp. 349-352 ◽  
Author(s):  
T. Yoshitake ◽  
N. Tanimoto ◽  
M. Ohkoshi ◽  
K. Tsushima
Keyword(s):  
Laser Ablation ◽  
Substrate Temperature ◽  
Excimer Laser ◽  
Film Growth ◽  
Excimer Laser Ablation

Deposition of Tungsten Films by Pulsed Excimer Laser Ablation Technique

1993 ◽  
Vol 334 ◽  
Author(s):  
A.M. Dhote ◽  
S.B. Ogale
Keyword(s):  
Laser Ablation ◽  
Substrate Temperature ◽  
Excimer Laser ◽  
Film Growth ◽  
Excimer Laser Ablation ◽  
Ablation Technique ◽  
Temperature Range ◽  
M Phase ◽  
Influence Of Substrate ◽  
Laser Ablation Technique

AbstractLow temperature deposition of W on Semiconductor substrates is vital for microelectronics technology. Laser ablation technique using KrF (248 nm) excimer laser has been employed to deposit W films from W(CO)6. The substrates used are Si(100) and SiO2. The influence of substrate temperature on the film growth rate was investigated in a broad temperature range (20 - 500 °C), keeping the laser fluence fixed at 0.4 Jcm−2. The substrate temperature is found to have a strong influence on the resistivity of the deposited films. Film resistivities within a factor of 3 of the value for pure bulk W have been observed in the substrate temperature range of 300 - 500 °C. X-ray diffraction data were also obtained. These revealed that the crystal structure of the film deposited in this temperature range corresponds specifically to the m-phase. Optical emissions from the plasma generated during the pulsed excimer laser ablation of W(CO)6 are also examined by an optical Multichannel Analyser (OMA).

A Comparison of the Gas Phase Processes Resulting from SiH4 and Si2H6 Photodissociation with a Pulsed ArF Excimer Laser

1988 ◽  
Vol 129 ◽  
Author(s):  
E. Boch ◽  
C. Fuchs ◽  
E. Fogarassy ◽  
P. Siffert
Keyword(s):  
Gas Phase ◽  
Excimer Laser ◽  
Laser Energy ◽  
Initial Pressure ◽  
Laser Pulses ◽  
Photon Absorption ◽  
Two Photon Absorption ◽  
Two Photon ◽  
Deposition Yield ◽  
193 Nm

ABSTRACTWe present in this paper a comparison of the photodissociation processes of SiH4 and Si2H6 under pulsed excimer laser at 193 nm. The experimental curves of the gas composition as a function of laser energy density show that the dissociation of Si2H6 results from both one and two-photon absorption whereas SiH4 only absorbs two photons. The deposition yield of Si2H6 has also been determined as a function of the number of laser pulses or initial pressure. These experimental results show the establishment of a stationary state in the gas phase and prove the existence of reverse reactions in the disilane kinetic model. The photodissociation of Si2H6 under UV laser excitation (193 nm) presents, therefore, similar properties to those of SiH4.

Modeling of Silicon Deposition Yield at Low Temperature by ArF Excimer Laser Photolysis of Disilane

1992 ◽  
Vol 263 ◽  
Author(s):  
B. Fowler ◽  
S. Lian ◽  
S. Krishnan ◽  
C. Li ◽  
L. Jung ◽  
...  
Keyword(s):  
Gas Phase ◽  
Excimer Laser ◽  
Substrate Surface ◽  
Chemical Vapor ◽  
Film Deposition ◽  
Growth Surface ◽  
Phase Reaction ◽  
Gas Phase Reactions ◽  
Arf Excimer Laser ◽  
193 Nm

ABSTRACTNon-thermal Chemical Vapor Deposition (CVD) such as laser-enhanced photo-CVD of Si at low temperatures is important for Si-based heterostructures and doping superlattices. Growth kinetic models must be developed to allow these processes to be fully exploited. Intrinsic Si epitaxial layers were deposited at low substrate temperatures of 250-350ºC using the 193 nm output of an ArF excimer laser to directly dissociate Si2H6. The intrinsic film deposition rate can be described by a kinetic model that considers the gas phase reactions of the primary photolysis products and diffusion ofsilicon-bearing molecules to the growth surface. With the laser beam tangential to the substrate surface, growth rates as a function of beam-to-substrate distance have been characterized and indicate that very little gas phase reaction occurs for the dominant Si growth precursor. In order for intrinsic film deposition to result solely from Si2H6 photolysis products, a sticking coefficient ≥ 0.6 must be assigned to the dominant growth precursor in order to fit the observed yield of Si deposited in the films, indicating that the dominant growth precursor in 193 nm Si2H6 photolysis is perhaps H2SiSiH2.

Surface Modification of Aluminum Nitride and of Aluminum by Excimer Laser

1992 ◽  
Vol 285 ◽  
Author(s):  
A.J. Pedraza ◽  
J.-Y. Zhang ◽  
H. Esrom
Keyword(s):  
Aluminum Nitride ◽  
Excimer Laser ◽  
Substrate Surface ◽  
Ablation Rate ◽  
Laser Wavelength ◽  
Mechanism Of Decomposition ◽  
Self Consistent ◽  
A New Technique ◽  
193 Nm ◽  
Evaporation Kinetics

ABSTRACTA new technique for selective metallization of aluminum nitride (AIN) has been previously reported (1). It involves the use of an excimer laser to activate the AIN surface followed by electroless plating (Cu,Ni,Au) of the irradiated areas. The mechanism of decomposition of ALN is accompanied by ablation and the formation of an Al film on the substrate surface. Ablation rates are reported here as a function of fluence and number of pulses for three different wavelengths λ = 193 nm (ArF), λ = 248 (KrF) and λ = 351 nm (XeF).The effect of laser wavelength on the ablation rate is discussed. The ablation rates for Al were zlso measured and are compared with the AIN ablation rates. A numerical thermal model is used to analyze the mechanisms of laser ablation of both materials. The evaporation kinetics are incorporated into the model. The Clausius-Clapeyron approximation is used to make a self-consistent calculation of boiling and decomposition temperatures.

A New Single Source Precursor Approach to Gallium and Aluminum Nitride

1995 ◽  
Vol 395 ◽  
Author(s):  
Deborah A. Neumayer ◽  
C.J. Carmalt ◽  
M.F. Arendt ◽  
J.M. White ◽  
A.H. Cowley ◽  
...  
Keyword(s):  
Thin Films ◽  
Aluminum Nitride ◽  
Substrate Temperature ◽  
Film Growth ◽  
Single Source ◽  
Amorphous Thin Films ◽  
Single Source Precursor ◽  
Nitrogen Bonds ◽  
Gan Film

ABSTRACTSingle source precursors which contain preformed gallium-nitrogen and aluminum-nitrogen bonds are being considered for the growth of gallium and aluminum nitride because of their potential for overcoming problems associated with conventional precursors. Presented is the evaluation of dimethylgallium azide, Me2GaN3(1), bisdimethylamidogallium azide, (Me2N)2GaN3(2), and bisdimethylamidoaluminum azide, (Me2N)2AlN3(3) as potential precursors for A1N and GaN film growth. The compounds were evaluated for stability, ease of transport, temperature of decomposition and quality of film deposited. Amorphous thin films of GaN with a band gap of 3.4 eV were deposited with 2 at 250 °C. Increasing the substrate temperature to 580 °C resulted in the deposition of epitaxial GaN films. Polycrystalline A1N films were grown with 3 at 600 °C.

Laser Induced Photochemical Vapor Deposition of Tungsten on Silicon

1989 ◽  
Vol 168 ◽  
Author(s):  
A. J. P. van Maaren ◽  
W. C. Sinke
Keyword(s):  
Laser Pulse ◽  
Substrate Temperature ◽  
Laser Irradiation ◽  
Excimer Laser ◽  
Vapor Deposition ◽  
Pulse Frequency ◽  
Arf Excimer Laser ◽  
193 Nm ◽  
Photochemical Vapor Deposition

AbstractAn ArF excimer laser (193 nm) aligned parallel to the substrate has been used to initiate photo-activation of the W-CVD process. W was deposited on silicon and SIMOX at a 310 °C substrate temperature using WF6 as a W precursor, together with H2. The samples were analyzed after deposition with SEM and 2 MeV He+ RBS, to obtain information about the reaction between WF6 and Si in laser-induced CVD of W. The data indicate that the reaction between WF6 and Si is suppressed upon laser irradiation. The suppression increases with increasing laser-pulse frequency. An explanation for this phenomenon is given in terms of atomic Hformation after (partial) photodissociation of WF6.

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