Surface Electronic Properties of Ionimplanted Laser-Annealed Si(111)

1981 ◽  
Vol 4 ◽  
Author(s):  
D.E. Eastman ◽  
P. Heimann ◽  
F.J. Himpsel ◽  
B. Reihl ◽  
D.M. Zehner ◽  
...  
Keyword(s):  
Ion Implantation ◽  
Fermi Level ◽  
Electronic Properties ◽  
Schottky Barrier ◽  
Conduction Band ◽  
Momentum Space ◽  
Laser Annealing ◽  
Surface States ◽  
P Type

ABSTRACTHighly-degenerate As-doped n-type and B-doped p-type Si(l11)−(1×1) surfaces have been prepared via ion implantation and laser annealing and studied using photoemission. For As concentrations of ∼4–7%, surface states become very different from those for intrinsic Si(l11)−(1×1) and the Fermi level EF at the surface moves to the conduction band minima resulting in a zero height n-type Schottky barrier. Emission from the conduction band minima has been directly viewed in momentum space.

Beam Annealing of Ion-Implanted Gaas and Inp

1980 ◽  
Vol 1 ◽  
Author(s):  
J. C. C. Fan ◽  
R. L. Chapman ◽  
J. P. Donnelly ◽  
G. W. Turner ◽  
C. O. Bozler
Keyword(s):  
Solar Cells ◽  
Electrical Properties ◽  
Ion Implantation ◽  
Fermi Level ◽  
Laser Annealing ◽  
Electrical Activation ◽  
Fermi Level Pinning ◽  
P Type ◽  
Conversion Efficiencies ◽  
Ion Implanted

ABSTRACTA scanned cw Nd: YAG laser was used to anneal ion-implanted GaAs and InP wafers. Measurements show that electrical activation is greater for p-type than for n-type dopants in GaAs, while in InP, the opposite is observed. A simple Fermi-level pinning model is presented to explain not only the electrical properties we have measured, but also those observed by other workers. We have fabricated GaAs and InP solar cells with junctions formed by ion implantation followed by laser annealing. The GaAs cells have much better conversion efficiencies than the InP cells, and this difference can be explained in terms of the model.

W/Si1-xGex Schottky Barrier: Effect of Stress and Composition

1994 ◽  
Vol 338 ◽  
Author(s):  
F. Meyer ◽  
V. Aubry ◽  
P. Warren ◽  
D. Dutartre
Keyword(s):  
Fermi Level ◽  
Band Gap ◽  
Schottky Barrier ◽  
Barrier Height ◽  
Conduction Band ◽  
Schottky Barrier Height ◽  
Barrier Effect ◽  
P Type

ABSTRACTThe Schottky barrier height of W on Si1-xGex/ Si has been investigated as a function of composition and strain retained in the alloy for a given composition. The barrier height to ntype films does not vary significantly while that to p-type films follows the same trends than the band gap: it decreases with x and the strain. These results suggest that the Fermi level at the interface is pinned relative to the conduction band.

scholarly journals Rich p -type-doping phenomena in boron-substituted silicene systems

2020 ◽  
Vol 7 (12) ◽  
pp. 200723
Author(s):  
Hai Duong Pham ◽  
Wu-Pei Su ◽  
Thi Dieu Hien Nguyen ◽  
Ngoc Thanh Thuy Tran ◽  
Ming-Fa Lin
Keyword(s):  
Charge Transfer ◽  
Fermi Level ◽  
Charge Density ◽  
Electronic Properties ◽  
First Principles ◽  
Chemical Environment ◽  
First Principles Calculations ◽  
Density Distributions ◽  
Essential Properties ◽  
P Type

The essential properties of monolayer silicene greatly enriched by boron substitutions are thoroughly explored through first-principles calculations. Delicate analyses are conducted on the highly non-uniform Moire superlattices, atom-dominated band structures, charge density distributions and atom- and orbital-decomposed van Hove singularities. The hybridized 2 p z –3 p z and [2s, 2 p x , 2 p y ]–[3s, 3 p x , 3 p y ] bondings, with orthogonal relations, are obtained from the developed theoretical framework. The red-shifted Fermi level and the modified Dirac cones/ π bands/ σ bands are clearly identified under various concentrations and configurations of boron-guest atoms. Our results demonstrate that the charge transfer leads to the non-uniform chemical environment that creates diverse electronic properties.

Ion Implantation For High Performance Ill-V Jfets And Hfets

1996 ◽  
Vol 421 ◽  
Author(s):  
J. C. Zolper ◽  
A. G. Baca ◽  
M. E. Sherwin ◽  
J. F. Klem
Keyword(s):  
Ion Implantation ◽  
Conduction Band ◽  
Density Of States ◽  
High Performance ◽  
Electronic Devices ◽  
Semiconductor Materials ◽  
Comprehensive Treatment ◽  
Enabling Technology ◽  
Deep Donor ◽  
P Type

AbstractIon implantation has been an enabling technology for the realization of many high performance electronic devices in III-V semiconductor materials. We report on advances in ion implantation processing technology for application to GaAs JFETs, AlGaAs/GaAs HFETs, and InGaP or InA1P-barrier HFETs. In particular, the GaAs JFET has required the development of shallow p-type implants using Zn or Cd with junction depths down to 35 nm after the activation anneal. Implant activation and ionization issues for AlGaAs will be reported along with those for InGaP and InAlP. A comprehensive treatment of Si-implant doping of AlGaAs is given based on the donor ionization energies and conduction band density-of-states dependence on Al-composition. Si and Si+P implants in InGaP are shown to achieve higher electron concentrations than for similar implants in AlGaAs due to the absence of the deep donor (DX) level. An optimized P co-implantation scheme in InGaP is shown to increase the implanted donor saturation level by 65%.

Formation of surface states during Schottky barrier fabrication on Al-doped p-type 6H–SiC

2004 ◽  
Vol 13 (4-8) ◽  
pp. 1166-1170 ◽  
Author(s):  
A. Venter ◽  
M.E. Samiji ◽  
A.W.R. Leitch
Keyword(s):  
Schottky Barrier ◽  
Surface States ◽  
P Type

scholarly journals Tunable Electronic Properties of Graphene/g-AlN Heterostructure: The Effect of Vacancy and Strain Engineering

Nanomaterials ◽  
2019 ◽  
Vol 9 (12) ◽  
pp. 1674 ◽  
Author(s):  
Xuefei Liu ◽  
Zhaofu Zhang ◽  
Zijiang Luo ◽  
Bing Lv ◽  
Zhao Ding
Keyword(s):  
Electronic Properties ◽  
Schottky Barrier ◽  
Barrier Height ◽  
Tensile Strain ◽  
Schottky Barrier Height ◽  
Strain Engineering ◽  
Nitrogen Vacancy ◽  
First Principles Calculation ◽  
Type Contact ◽  
P Type

The structural and electronic properties of graphene/graphene-like Aluminum Nitrides monolayer (Gr/g-AlN) heterojunction with and without vacancies are systematically investigated by first-principles calculation. The results prove that Gr/g-AlN with nitrogen-vacancy (Gr/g-AlN-VN) is energy favorable with the smallest sublayer distance and binding energy. Gr/g-AlN-VN is nonmagnetic, like that in the pristine Gr/g-AlN structure, but it is different from the situation of g-AlN-VN, where a magnetic moment of 1 μB is observed. The metallic graphene acts as an electron acceptor in the Gr/g-AlN-VN and donor in Gr/g-AlN and Gr/g-AlN-VAl contacts. Schottky barrier height Φ B , n by traditional (hybrid) functional of Gr/g-AlN, Gr/g-AlN-VAl, and Gr/g-AlN-VN are calculated as 2.35 (3.69), 2.77 (3.23), and 1.10 (0.98) eV, respectively, showing that vacancies can effectively modulate the Schottky barrier height. Additionally, the biaxial strain engineering is conducted to modulate the heterojunction contact properties. The pristine Gr/g-AlN, which is a p-type Schottky contact under strain-free condition, would transform to an n-type contact when 10% compressive strain is applied. Ohmic contact is formed under a larger tensile strain. Furthermore, 7.5% tensile strain would tune the Gr/g-AlN-VN from n-type to p-type contact. These plentiful tunable natures would provide valuable guidance in fabricating nanoelectronics devices based on Gr/g-AlN heterojunctions.

Schottky Barrier Height Dependence on the Metal Work Function for p-type Si Schottky Diodes

2004 ◽  
Vol 59 (11) ◽  
pp. 795-798 ◽  
Author(s):  
Güven Çankaya ◽  
Nazım Uçar
Keyword(s):  
Fermi Level ◽  
Schottky Barrier ◽  
Schottky Diodes ◽  
Metal Work Function ◽  
Current Voltage ◽  
Current Voltage Characteristics ◽  
Work Functions ◽  
P Type ◽  
Relationship Of ◽  
Metal Work

We investigated Schottky barrier diodes of 9 metals (Mn, Cd, Al, Bi, Pb, Sn, Sb, Fe, and Ni) having different metal work functions to p-type Si using current-voltage characteristics. Most Schottky contacts show good characteristics with an ideality factor range from 1.057 to 1.831. Based on our measurements for p-type Si, the barrier heights and metal work functions show a linear relationship of current-voltage characteristics at room temperature with a slope (S=ϕb/ϕm) of 0.162, even though the Fermi level is partially pinned. From this linear dependency, the density of interface states was determined to be about 4.5 · 1013 1/eV per cm2, and the average pinning position of the Fermi level as 0.661 eV below the conduction band

Electrical Properties of Epitaxial Silicide-Silicon Interfaces

1985 ◽  
Vol 54 ◽  
Author(s):  
R. T. Tung ◽  
A. F. J. Levi ◽  
J. M. Gibson ◽  
K. K. Ng ◽  
A. Chantre
Keyword(s):  
Fermi Level ◽  
Single Crystal ◽  
Schottky Barrier ◽  
Surface Region ◽  
Ideal Behavior ◽  
Near Surface ◽  
Barrier Heights ◽  
Transmission Electron ◽  
Current Voltage ◽  
P Type

ABSTRACTThe Schottky barrier heights of single crystal NiSi2 layers on Si(111) have been studied by current-voltage, capacitance-voltage and activation energy techniques. Near ideal behavior is found for Schottky barriers grown on substrates cleaned at ∼820°C in ultrahigh vacuum. The Fermi level positions at the interfaces of single crystal type A and type B NiSi2 are shown to differ by ∼0.14 eV. Transmission electron microscopy demonstrated the epitaxial perfection of these suicide layers. At a cleaning temperature of 1050° C, the near surface region of lightly doped n-type Si was converted to p-type. The presence of a p-n junction was directly revealed by spreading resistance measurements and resulted in a high apparent Schottky barrier height (≥0.75 eV) which no longer bears immediate relationship to the interface Fermi level position.

FABRICATION OF OHMIC CONTACT ON p-TYPE InP USING ION IMPLANTATION AND LASER ANNEALING

1980 ◽  
pp. 494-499 ◽  
Author(s):  
Z.L. Liau ◽  
N.L. DeMeo ◽  
J.P. Donnelly ◽  
D.E. Mull ◽  
R. Bradbury ◽  
...  
Keyword(s):  
Ion Implantation ◽  
Ohmic Contact ◽  
Laser Annealing ◽  
P Type
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