Effects of Metal Buffer Layer on the Epitaxial Growth of YBa2Cu3O7-y. Superconducting Films by Dipping-Pyrolysis Process

1995 ◽  
Vol 401 ◽  
Author(s):  
T. Manabe ◽  
I. Yamaguchi ◽  
S. Nakamura ◽  
W. Kondo ◽  
S. Mizuta ◽  
...  
Keyword(s):  
Heat Treatment ◽  
Epitaxial Growth ◽  
Buffer Layer ◽  
Annealing Temperature ◽  
Superconducting Films ◽  
The Other ◽  
Pyrolysis Process ◽  
Ybco Films ◽  
Other Hand ◽  
Metal Layers

AbstractSuperconducting Yba2Cu3O7 -x(YBCO) films were prepared by dipping-pyrolysis process on SrTiO3 (001) or on MgO (001) substrates covered with a metal (Au or Ag) buffer layer, and the effects of these metal layers on the growth of YBCO films were investigated. Epitaxial growth of YBCO was found to be suppressed by the Au buffer layer, which crystallized to exhibit (111) orientation, after heat treatment at 700°C and higher. On the other hand, epitaxial YBCO films were obtained starting with Ag buffer layer by heat treatment at 700°C and higher, after which most of Ag was accumulated to particles. It was also found that the annealing temperature required for the epitaxial growth of YBCO films on MgO was lowered to 850°C by adopting the Ag buffer layer.

Crystallization and in-plane alignment behavior of YBa2Cu3O7−y films on MgO(001) prepared by the dipping-pyrolysis process

1995 ◽  
Vol 10 (7) ◽  
pp. 1635-1643 ◽  
Author(s):  
T. Manabe ◽  
I. Yamaguchi ◽  
S. Nakamura ◽  
W. Kondo ◽  
T. Kumagai ◽  
...  
Keyword(s):  
Heat Treatment ◽  
Liquid Phase ◽  
Oxygen Partial Pressure ◽  
Partial Pressure ◽  
Annealing Temperature ◽  
Direct Reaction ◽  
Pyrolysis Process ◽  
Unstable Region ◽  
Ybco Films ◽  
Oriented Films

The effects of annealing temperature and oxygen partial pressure [p(O2)] were investigated on the crystallization and orientation of YBa2Cu3O7−y (YBCO) films on MgO(001) prepared by the dipping-pyrolysis process. The c-axis oriented films without in-plane alignment were prepared by annealing in the YBCO-unstable region, i.e., at low initial p(O2) of 10−4−10−3 atm and 950 °C followed by O2 treatment, through intermediate Y2BaCuO5 and liquid phase. In-plane aligned c- or c/a-axis films were prepared by similar heat treatment with an initial p(02) of 10−4 atm and 900–925 °C through a mixture of BaCu2O2 and YBa3Cu2O6+x. In contrast, nonoriented YBCO films were obtained by annealing at higher initial p(O2)'s and lower temperatures, i.e., by direct reaction among Y2O3, BaCO3, and CuO.

SRAM Failure Analysis Strategy

2003 ◽  
Author(s):  
P. Egger ◽  
C. Burmer
Keyword(s):  
Liquid Crystal ◽  
Failure Analysis ◽  
The Other ◽  
Other Hand ◽  
Analysis Strategy ◽  
Emission Microscopy ◽  
Metal Layers ◽  
Failure Localization

Abstract The area of embedded SRAMs in advanced logic ICs is increasing more and more. On the other hand smaller structure sizes and an increasing number of metal layers make conventional failure localization by using emission microscopy or liquid crystal inefficient. In this paper a SRAM failure analysis strategy will be presented independent on layout and technology.

Role of Cl/Si Ratio in the Low-Temperature Chloro-Carbon Epitaxial Growth of SiC

2013 ◽  
Vol 740-742 ◽  
pp. 205-208
Author(s):  
Galyna Melnychuk ◽  
Siva Prasad Kotamraju ◽  
Yaroslav Koshka
Keyword(s):  
Growth Rate ◽  
Low Temperature ◽  
Epitaxial Growth ◽  
Growth Process ◽  
Growth Conditions ◽  
The Other ◽  
Additional Increase ◽  
Other Hand

In order to understand the influence of the Cl/Si ratio on the morphology of the low-temperature chloro-carbon epitaxial growth, HCl was added during the SiCl4/CH3Cl growth at 1300°C. Use of higher Cl/Si ratio allowed only modest improvements of the growth rate without morphology degradation, which did not go far beyond what has been achieved previously by optimizing the value of the input C/Si ratio. On the other hand, when the epitaxial growth process operated at too low or too high values of the input C/Si ratio, i.e., outside of the window of good epilayer morphology, any additional increase of the Cl/Si ratio caused improvement of the epilayer morphology. It was established that this improvement was due to a change of the effective C/Si ratio towards its intermediate values, which corresponded to more favorable growth conditions.

Texture in Welded Industrial Aluminum

2014 ◽  
Vol 563 ◽  
pp. 7-12
Author(s):  
Zakaria Boumerzoug ◽  
Nedjma Chérifi ◽  
Thierry Baudin
Keyword(s):  
Heat Treatment ◽  
Epitaxial Growth ◽  
Texture Component ◽  
Weld Joint ◽  
Grain Orientation ◽  
Welded Joint ◽  
The Other ◽  
Isothermal Heat Treatment ◽  
Electron Back Scattered Diffraction ◽  
Industrial Aluminum

In this investigation, grain orientation has been studied in an industrial aluminium Al99.5 which has been welded by TIG process. The optical microscopy and EBSD (Electron Back Scattered Diffraction) were the main techniques used to illustrate the effect of welding on grain orientation in fusion zone and in heat affected zone. Epitaxial growth has been observed in weld joint and texture of each zone has been determined. On the other hand, the effect of isothermal heat treatment at 400 °C on homogenization of welded joint has been also studied. It was shown that the cube orientation {001}<100> is the dominant texture component in welded joint before or after heat treatments.

Selective Area Etching of GaN and AlGaN by Thermally Chemical Reaction in Hydrogen Ambient

1997 ◽  
Vol 482 ◽  
Author(s):  
K. Hiramatsu ◽  
H. Matsushima ◽  
H. Hanai ◽  
N. Sawaki
Keyword(s):  
Chemical Reaction ◽  
Annealing Temperature ◽  
Etching Rate ◽  
The Other ◽  
Surface Etching ◽  
Selective Area ◽  
Other Hand ◽  
Different Temperatures ◽  
Ambient Gases ◽  
Ambient Gas

AbstractThe selective area etching of wurtzite GaN (0001) and AlGaN (0001) with SiO2 masks is investigated for different temperatures of 800 to 1 100°C and different ambient gases of H2, N2 and Ar including NH3. The etching rate of GaN increases with increasing annealing temperature under H2 ambient. This etching is attributed to the chemical reaction between Ga-N and H2. On the other hand, the etching of GaN does not occur in the N2 or Ar ambient gas. The NH3 gas in H2 ambient suppresses the chemical reaction, while the NH3 gas in N2 enhances it. The surface etching of Al0.1Ga0.9N is not observed even in H2 ambient.

scholarly journals Accelerated sliding of pollen tube organelles along Characeae actin bundles regulated by Ca2+.

1988 ◽  
Vol 106 (5) ◽  
pp. 1539-1543 ◽  
Author(s):  
T Kohno ◽  
T Shimmen
Keyword(s):  
Heat Treatment ◽  
Pollen Tube ◽  
Cytoplasmic Streaming ◽  
Pollen Tubes ◽  
The Other ◽  
Cell Models ◽  
Organelle Movement ◽  
Actin Bundles ◽  
Other Hand ◽  
Order Of Magnitude

Pollen tubes show active cytoplasmic streaming. We isolated organelles from pollen tubes and tested their ability to slide along actin bundles in characean cell models. Here, we show that sliding of organelles was ATP-dependent and that motility was lost after N-ethylmaleimide or heat treatment of organelles. On the other hand, cytoplasmic streaming in pollen tube was inhibited by either N-ethylmaleimide or heat treatment. These results strongly indicate that cytoplasmic streaming in pollen tubes is supported by the "actomyosin"-ATP system. The velocity of organelle movement along characean actin bundles was much higher than that of the native streaming in pollen tubes. We suggested that pollen tube "myosin" has a capacity to move at a velocity of the same order of magnitude as that of characean myosin. Moreover, the motility was high at Ca2+ concentrations lower than 0.18 microM (pCa 6.8) but was inhibited at concentration higher than 4.5 microM (pCa 5.4). In conclusion, cytoplasmic streaming in pollen tubes is suggested to be regulated by Ca2+ through "myosin" inactivation.

Effect of the Annealing Temperature on Dielectric Properties of Bi1.5Zn1.0Nb1.5O7 Films Prepared by MOCVD

2008 ◽  
Vol 388 ◽  
pp. 175-178
Author(s):  
Hiroshi Funakubo ◽  
Shingo Okaura ◽  
Muneyasu Suzuki ◽  
Hiroshi Uchida ◽  
Seiichiro Koda
Keyword(s):  
Dielectric Constant ◽  
Dielectric Properties ◽  
Dielectric Loss ◽  
Temperature Coefficient ◽  
Annealing Temperature ◽  
Relative Dielectric Constant ◽  
Fused Silica ◽  
The Other ◽  
Other Hand ◽  
Silica Substrates

Effect of annealing temperature on the dielectric properties of Bi1.5Zn1.0Nb1.5O7 films prepared on (111)Pt//(001)Al2O3 and (111)Pt/fused silica substrates by MOCVD was investigated. The tunability and the inverse of the dielectric loss [1/ (tan )] increased with increasing annealing temperature. Relative dielectric constant and temperature coefficient of the capacitance (TCC) increased with the crystallinity of the films. On the other hand, (1/tan ) was independent of the crystallinity of the films, but was dramatically increased by the annealing.

Effect of Heating Treatment on the Resistivity of Polycrystalline Silicon

2011 ◽  
Vol 675-677 ◽  
pp. 113-116
Author(s):  
Lei Zhang ◽  
Jia Yan Li ◽  
Hao Yang Wang ◽  
Fu Min Xu ◽  
Yi Tan
Keyword(s):  
Heat Treatment ◽  
Polycrystalline Silicon ◽  
Influence Factors ◽  
The Other ◽  
Type Region ◽  
Obvious Change ◽  
Other Hand ◽  
Heating Treatment ◽  
P Type

Effect of heat treatment in atmosphere on the resistivity of polycrystalline silicon has been investigated in this paper. After heat treatment at 1050oC for 10h, there is no obvious change of the resistivity in the N-type region of polycrystalline silicon, which could be contributed to the complicated influence factors, such as more impurities content and defects. On the other hand, an obvious increase of the resistivity was observed in the P-type region which could be contributed the redistribution of Al and B in the Si-SiO2 interface. The resistivity of the P-type region increased from less than 1Ω·cm to several hundreds Ω·cm.

Effects of the Heat-Treatment Conditions on Microstructures of YbBa2Cu3O7-σ Superconducting Films Formed by the Dipping-Pyrolysis Process

2000 ◽  
Vol 623 ◽  
Author(s):  
J. Shibata ◽  
K. Yamagiwa ◽  
I. Hirabayashi ◽  
T. Hirayama ◽  
Y. Ikuhara
Keyword(s):  
Electron Microscopy ◽  
Heat Treatment ◽  
Transmission Electron Microscopy ◽  
Superconducting Films ◽  
Pyrolysis Process ◽  
Heating Rates ◽  
Pyrolysis Method ◽  
Treatment Conditions ◽  
Transmission Electron ◽  
High Heating

AbstractYbBa2Cu3O7-σ(Yb123) films were formed on SrTiO3(STO)(001) and LaAlO3(LAO)(001) substrates by the dipping-pyrolysis process. Using transmission electron microscopy, we investigated effects of the heat-treatment conditions in the processes of the dipping-pyrolysis method on microstructures of these films. As a result, we found that the high heating rates at the initial and final heat-treatments are necessary for achieving the epitaxial growth of the superconducting films.

Effect of Sandblasting and Heat Treatment on Biaxial Flexure Strength of the Zirconia/Alumina Nanocomposite

2007 ◽  
Vol 330-332 ◽  
pp. 353-356 ◽  
Author(s):  
Seiji Ban ◽  
Hideo Sato ◽  
Y. Suehiro ◽  
H. Nakanishi ◽  
Masahiro Nawa
Keyword(s):  
Heat Treatment ◽  
Cerium Oxide ◽  
Tetragonal Zirconia ◽  
The Other ◽  
Alumina Powder ◽  
Monoclinic Zro2 ◽  
Flexure Strength ◽  
Other Hand ◽  
Biaxial Flexure

The effect of sandblasting and heat treatment on biaxial flexure strengths of the zirconia/alumina nanocomposite stabilized with cerium oxide (Ce-TZP/Al2O3 nanocomposite) was evaluated in comparison to that of yttria stabilized tetragonal zirconia polycrystals (Y-TZP). The disc-shaped specimens of the nanocomposite and Y-TZP were sandblasted with 70)m alumina powder. After sandblasting, half of the specimens were heated at 1000°C for 5 min. The biaxial flexure strengths of Y-TZP were independent on the sandblasting, but decreased with the heat treatment. On the other hand, the biaxial flexure strength of the nanocomposite increased with the sandblasting and significantly decreased with the heat treatment. The content of monoclinic ZrO2 of Y-TZP and the nanocomposite increased with the sandblasting pressure and dramatically decreased with the heat treatment. These results suggest that the stress-induced transformation from tetragonal to monoclinic of the nanocomposite occurs more easily than Y-TZP.

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