SRAM Failure Analysis Strategy

2003 ◽  
Author(s):  
P. Egger ◽  
C. Burmer
Keyword(s):  
Liquid Crystal ◽  
Failure Analysis ◽  
The Other ◽  
Other Hand ◽  
Analysis Strategy ◽  
Emission Microscopy ◽  
Metal Layers ◽  
Failure Localization

Abstract The area of embedded SRAMs in advanced logic ICs is increasing more and more. On the other hand smaller structure sizes and an increasing number of metal layers make conventional failure localization by using emission microscopy or liquid crystal inefficient. In this paper a SRAM failure analysis strategy will be presented independent on layout and technology.

Analysis of Delta Iddq Soft Fails on Pass Chips

2006 ◽  
Author(s):  
I. Österreicher ◽  
S. Eckl ◽  
B. Tippelt ◽  
S. Döring ◽  
R. Prang ◽  
...  
Keyword(s):  
Failure Analysis ◽  
Failure Mode ◽  
Photon Emission ◽  
Complete Analysis ◽  
Functional Tests ◽  
Analysis Techniques ◽  
Atomic Force ◽  
Current Consumption ◽  
Emission Microscopy ◽  
Failure Localization

Abstract Depending on the field of application the ICs have to meet requirements that differ strongly from product to product, although they may be manufactured with similar technologies. In this paper a study of a failure mode is presented that occurs on chips which have passed all functional tests. Small differences in current consumption depending on the state of an applied pattern (delta Iddq measurement) are analyzed, although these differences are clearly within the usual specs. The challenge to apply the existing failure analysis techniques to these new fail modes is explained. The complete analysis flow from electrical test and Global Failure Localization to visualization is shown. The failure is localized by means of photon emission microscopy, further analyzed by Atomic Force Probing, and then visualized by SEM and TEM imaging.

Failure Analysis of SOI Bipolar Device Using Photon Emission Microscopy

2004 ◽  
Author(s):  
Todd M. Simons ◽  
Bob Davis
Keyword(s):  
Failure Analysis ◽  
Failure Mechanism ◽  
Photon Emission ◽  
Silicon On Insulator ◽  
The Other ◽  
No Emission ◽  
Analysis Process ◽  
Soi Devices ◽  
Emission Microscopy ◽  
Optical Paths

Abstract Photon emission microscopy (PEM) provides a valuable first step in the failure analysis process. An analysis of a mixed signal bipolar/CMOS silicon on insulator (SOI) device revealed an abnormal emission site that appeared to emanate from the oxide isolation ring. Subsequent mechanical probing of the emitting bipolar transistor revealed node voltages nearly identical to a known good reference unit that had no emission site at the affected transistor. This article analyzes the reasons for the emission site on one transistor and not the other even though the node voltages were the same. It was observed that while the node voltages were nearly identical, the available current paths were not. The different paths directly related to the amount of available carriers for recombination in the base. The construction of the SOI device creates unique optical paths for emission sites not observed in non-SOI devices. It can be concluded that the failure mechanism does not always reside at the abnormal PEM site.

A New Failure Analysis Roadmap for Power Semiconductor Modules and Devices

2011 ◽  
Author(s):  
Peter Jacob ◽  
Albert Kunz ◽  
Giovanni Nicoletti
Keyword(s):  
Failure Analysis ◽  
High Dose ◽  
Power Semiconductors ◽  
Power Semiconductor ◽  
Metal Layers ◽  
Failure Localization

Abstract In case of power semiconductor analysis, classical failure localization methods are restricted in application due to thick, closed metal layers and high-dose bulk-Si implants, making backside access difficult. Furthermore, defect traces in power semiconductors are often such severe that no conclusive FA is possible anymore. The new roadmap considers these specialties and shows ways how to deal with them, showing ways to conclusive results.

Effects of Metal Buffer Layer on the Epitaxial Growth of YBa2Cu3O7-y. Superconducting Films by Dipping-Pyrolysis Process

1995 ◽  
Vol 401 ◽  
Author(s):  
T. Manabe ◽  
I. Yamaguchi ◽  
S. Nakamura ◽  
W. Kondo ◽  
S. Mizuta ◽  
...  
Keyword(s):  
Heat Treatment ◽  
Epitaxial Growth ◽  
Buffer Layer ◽  
Annealing Temperature ◽  
Superconducting Films ◽  
The Other ◽  
Pyrolysis Process ◽  
Ybco Films ◽  
Other Hand ◽  
Metal Layers

AbstractSuperconducting Yba2Cu3O7 -x(YBCO) films were prepared by dipping-pyrolysis process on SrTiO3 (001) or on MgO (001) substrates covered with a metal (Au or Ag) buffer layer, and the effects of these metal layers on the growth of YBCO films were investigated. Epitaxial growth of YBCO was found to be suppressed by the Au buffer layer, which crystallized to exhibit (111) orientation, after heat treatment at 700°C and higher. On the other hand, epitaxial YBCO films were obtained starting with Ag buffer layer by heat treatment at 700°C and higher, after which most of Ag was accumulated to particles. It was also found that the annealing temperature required for the epitaxial growth of YBCO films on MgO was lowered to 850°C by adopting the Ag buffer layer.

scholarly journals Influence of the Maximum Blur Radius on Depth Sensor Based on Liquid Crystal Lens

2021 ◽  
Author(s):  
Liming Zheng ◽  
Xiaoxi Chen ◽  
Yalei Zhang ◽  
Mao Ye
Keyword(s):  
Liquid Crystal ◽  
Depth Resolution ◽  
The Other ◽  
Depth Sensor ◽  
The Real ◽  
Boundary Frequency ◽  
Other Hand ◽  
Middle Range ◽  
Real Value ◽  
Liquid Crystal Lens

AbstractThis paper describes how the maximum blur radius affects the depth results by depth from the defocus (DFD) method based on liquid crystal (LC) lens. Boundary frequency is determined by the maximum blur radius. It is found that if the maximum blur radius used in the calculation is larger than the real value, the depth resolution obtained is reduced; on the other hand, if one smaller than the real value is used, the depth resolution in the middle range of the scene is increased, but errors occur in the near and far planes. Using the maximum blur radius close to the real one results in the best depth results.

A study of cometary eruptions through OH radio-lines

1999 ◽  
Vol 173 ◽  
pp. 249-254
Author(s):  
A.M. Silva ◽  
R.D. Miró
Keyword(s):  
Short Duration ◽  
Growth Curves ◽  
The Other ◽  
Initial Mass ◽  
Radio Lines ◽  
Other Hand ◽  
Sudden Rise

AbstractWe have developed a model for theH2OandOHevolution in a comet outburst, assuming that together with the gas, a distribution of icy grains is ejected. With an initial mass of icy grains of 108kg released, theH2OandOHproductions are increased up to a factor two, and the growth curves change drastically in the first two days. The model is applied to eruptions detected in theOHradio monitorings and fits well with the slow variations in the flux. On the other hand, several events of short duration appear, consisting of a sudden rise ofOHflux, followed by a sudden decay on the second day. These apparent short bursts are frequently found as precursors of a more durable eruption. We suggest that both of them are part of a unique eruption, and that the sudden decay is due to collisions that de-excite theOHmaser, when it reaches the Cometopause region located at 1.35 × 105kmfrom the nucleus.

Closing the GAP—A 5Å Scanning Microscope

1969 ◽  
Vol 27 ◽  
pp. 6-7
Author(s):  
A. V. Crewe
Keyword(s):  
Normal Form ◽  
The Other ◽  
Resolving Power ◽  
Scanning Microscope ◽  
Conventional Microscope ◽  
Other Hand ◽  
Closing The Gap ◽  
Thermal Sources ◽  
Better Than ◽  
Transmission Microscope

We have become accustomed to differentiating between the scanning microscope and the conventional transmission microscope according to the resolving power which the two instruments offer. The conventional microscope is capable of a point resolution of a few angstroms and line resolutions of periodic objects of about 1Å. On the other hand, the scanning microscope, in its normal form, is not ordinarily capable of a point resolution better than 100Å. Upon examining reasons for the 100Å limitation, it becomes clear that this is based more on tradition than reason, and in particular, it is a condition imposed upon the microscope by adherence to thermal sources of electrons.

Life Beyond 1MeV

1980 ◽  
Vol 38 ◽  
pp. 30-33
Author(s):  
K.H. Westmacott
Keyword(s):  
Electron Microscopy ◽  
Past Experience ◽  
The Other ◽  
Good Case ◽  
Other Hand ◽  
The U.S

Life beyond 1MeV – like life after 40 – is not too different unless one takes advantage of past experience and is receptive to new opportunities. At first glance, the returns on performing electron microscopy at voltages greater than 1MeV diminish rather rapidly as the curves which describe the well-known advantages of HVEM often tend towards saturation. However, in a country with a significant HVEM capability, a good case can be made for investing in instruments with a range of maximum accelerating voltages. In this regard, the 1.5MeV KRATOS HVEM being installed in Berkeley will complement the other 650KeV, 1MeV, and 1.2MeV instruments currently operating in the U.S. One other consideration suggests that 1.5MeV is an optimum voltage machine – Its additional advantages may be purchased for not much more than a 1MeV instrument. On the other hand, the 3MeV HVEM's which seem to be operated at 2MeV maximum, are much more expensive.

Can the Academic Self-Concept be Positive and Realistic?

2005 ◽  
Vol 19 (3) ◽  
pp. 129-132 ◽  
Author(s):  
Reimer Kornmann
Keyword(s):  
Academic Performance ◽  
Opposite Effect ◽  
Self Esteem ◽  
Point Of View ◽  
The Other ◽  
Self Concept ◽  
High Ability ◽  
Self Image ◽  
Other Hand

Summary: My comment is basically restricted to the situation in which less-able students find themselves and refers only to literature in German. From this point of view I am basically able to confirm Marsh's results. It must, however, be said that with less-able pupils the opposite effect can be found: Levels of self-esteem in these pupils are raised, at least temporarily, by separate instruction, academic performance however drops; combined instruction, on the other hand, leads to improved academic performance, while levels of self-esteem drop. Apparently, the positive self-image of less-able pupils who receive separate instruction does not bring about the potential enhancement of academic performance one might expect from high-ability pupils receiving separate instruction. To resolve the dilemma, it is proposed that individual progress in learning be accentuated, and that comparisons with others be dispensed with. This fosters a self-image that can in equal measure be realistic and optimistic.

Stories and the Self

2020 ◽  
Vol 32 (2) ◽  
pp. 47-58 ◽  
Author(s):  
Stefan Krause ◽  
Markus Appel
Keyword(s):  
Meta Analysis ◽  
The Self ◽  
The Other ◽  
Lower Degree ◽  
Contrast Effects ◽  
Self Perception ◽  
Self Perceptions ◽  
Other Hand ◽  
The One ◽  
Implicit And Explicit

Abstract. Two experiments examined the influence of stories on recipients’ self-perceptions. Extending prior theory and research, our focus was on assimilation effects (i.e., changes in self-perception in line with a protagonist’s traits) as well as on contrast effects (i.e., changes in self-perception in contrast to a protagonist’s traits). In Experiment 1 ( N = 113), implicit and explicit conscientiousness were assessed after participants read a story about either a diligent or a negligent student. Moderation analyses showed that highly transported participants and participants with lower counterarguing scores assimilate the depicted traits of a story protagonist, as indicated by explicit, self-reported conscientiousness ratings. Participants, who were more critical toward a story (i.e., higher counterarguing) and with a lower degree of transportation, showed contrast effects. In Experiment 2 ( N = 103), we manipulated transportation and counterarguing, but we could not identify an effect on participants’ self-ascribed level of conscientiousness. A mini meta-analysis across both experiments revealed significant positive overall associations between transportation and counterarguing on the one hand and story-consistent self-reported conscientiousness on the other hand.

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