Optical and Structural Characterization of Arsenide/Phosphide Interfaces Formed by Flow Modulation Epitaxy

1995 ◽  
Vol 406 ◽  
Author(s):  
D. T. Emerson ◽  
J. A. Smart ◽  
K. L. Whittingham ◽  
E. M. Chumbes ◽  
J. R. Shealy
Keyword(s):  
Raman Scattering ◽  
Quantum Wells ◽  
Band Alignment ◽  
Structural Quality ◽  
Single Quantum ◽  
X Ray Diffraction ◽  
X Ray ◽  
Flow Modulation ◽  
Interfacial Layers ◽  
Transmission Electron

AbstractBulk GaAsP, 20Å–500Å GaAsP/GaInP single quantum wells and 70 Å period GaAsP/GaInP superlattices were deposited on GaAs substrates by Flow Modulation Epitaxy. In these structures, the disordered GaInP is lattice matched while the GaAsP is in tension with the As mole fraction varying from 0.6 to 1. The structures were studied using asymmetric x-ray diffraction, 1K photoluminescence, Raman scattering, transmission electron microscopy and atomic force microscopy. Raman and x-ray diffraction are used to assess the structural quality of the superlattices, especially with regard to the presence/absence of superlattice x-ray satellites and disorder activated longitudinal acoustic phonons. A model including the effects of composition, strain, and confinement on longitudinal optic phonons is described and used to estimate the composition, using Raman scattering, in the thin, pseudomorphic GaAsP layers in the superlattices. Photoluminescence is used to assess the composition of the interfacial layers in the single quantum wells and to determine transition energies in the superlattices. In addition, analysis of the heterostructure luminescence, including prediction of the energy band alignment as calculated with the model solid theory corrected for strain, is found to suggest the presence of a type II band alignment in the heterostructures for some values of GaAsP composition. Finally, Raman scattering and x-ray diffraction are used to compare arsenide to phosphide interfaces in GaAs and InP-based heterostructures.

Optical and Structural Characterization of Arsenide/ Phosphide Interfaces Formed by Flow Modulation Epitaxy

1995 ◽  
Vol 405 ◽  
Author(s):  
D. T. Emerson ◽  
J. A. Smart ◽  
K. L. Whittingham ◽  
E. M. Chumbes ◽  
J. R. Shealy
Keyword(s):  
Raman Scattering ◽  
Quantum Wells ◽  
Band Alignment ◽  
Structural Quality ◽  
Single Quantum ◽  
X Ray Diffraction ◽  
X Ray ◽  
Flow Modulation ◽  
Interfacial Layers ◽  
Transmission Electron

AbstractBulk GaAsP, 20Å-500Å GaAsP/GaInP single quantum wells and 70 Å period GaAsP/GaInP superlattices were deposited on GaAs substrates by Flow Modulation Epitaxy. In these structures, the disordered GaInP is lattice matched while the GaAsP is in tension with the As mole fraction varying from 0.6 to 1. The structures were studied using asymmetric x-ray diffraction, 1K photoluminescence, Raman scattering, transmission electron microscopy and atomic force microscopy. Raman and x-ray diffraction are used to assess the structural quality of the superlattices, especially with regard to the presence/absence of superlattice x-ray satellites and disorder activated longitudinal acoustic phonons. A model including the effects of composition, strain, and confinement on longitudinal optic phonons is described and used to estimate the composition, using Raman scattering, in the thin, pseudomorphic GaAsP layers in the superlattices. Photoluminescence is used to assess the composition of the interfacial layers in the single quantum wells and to determine transition energies in the superlattices. In addition, analysis of the heterostructure luminescence, including prediction of the energy band alignment as calculated with the model solid theory corrected for strain, is found to suggest the presence of a type II band alignment in the heterostructures for some values of GaAsP composition. Finally, Raman scattering and x-ray diffraction are used to compare arsenide to phosphide interfaces in GaAs and InP-based heterostructures.

Spontaneous Lateral Modulations in InAlAs Buffer Layers Grown by MBE on InP Substrates

1995 ◽  
Vol 417 ◽  
Author(s):  
F. Peiró ◽  
A. Cornet ◽  
J. C. Ferrer ◽  
J. R. Morante ◽  
G. Halkias ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Molecular Beam ◽  
Buffer Layers ◽  
Single Quantum ◽  
X Ray Diffraction ◽  
Single Quantum Well ◽  
Quantum Well Structures ◽  
X Ray ◽  
Transmission Electron ◽  
Inp Substrates

AbstractTransmission Electron Microscopy (TEM) and X-ray Diffraction (XRD) have been used to analyze the spontaneous appearance of lateral composition modulations in InyAl1−yAs (yIn.≅ 50%) buffer layers of single quantum well structures grown by molecular beam epitaxy on exact and vicinal (100) InP substrates, at growth temperatures in the range of 530°C–580°C. The influence of the growth temperature, substrate misorientation and epilayer mismatch on the InAlAs lateral modulation is discussed. The development of a self-induced quantum-wire like morphology in the In0.53Ga0.47As single quantum wells grown over the modulated buffers is also commented on.

scholarly journals The impact of point defects in n-type GaN layers on thermal decomposition of InGaN/GaN QWs

2021 ◽  
Vol 11 (1) ◽  
Author(s):  
Mikolaj Grabowski ◽  
Ewa Grzanka ◽  
Szymon Grzanka ◽  
Artur Lachowski ◽  
Julita Smalc-Koziorowska ◽  
...  
Keyword(s):  
Quantum Wells ◽  
High Temperatures ◽  
Point Defects ◽  
X Ray Diffraction ◽  
Helium Ions ◽  
X Ray ◽  
Sapphire Substrates ◽  
Transmission Electron ◽  
The Impact ◽  
Ingan Quantum Wells

AbstractThe aim of this paper is to give an experimental evidence that point defects (most probably gallium vacancies) induce decomposition of InGaN quantum wells (QWs) at high temperatures. In the experiment performed, we implanted GaN:Si/sapphire substrates with helium ions in order to introduce a high density of point defects. Then, we grew InGaN QWs on such substrates at temperature of 730 °C, what caused elimination of most (but not all) of the implantation-induced point defects expanding the crystal lattice. The InGaN QWs were almost identical to those grown on unimplanted GaN substrates. In the next step of the experiment, we annealed samples grown on unimplanted and implanted GaN at temperatures of 900 °C, 920 °C and 940 °C for half an hour. The samples were examined using Photoluminescence, X-ray Diffraction and Transmission Electron Microscopy. We found out that the decomposition of InGaN QWs started at lower temperatures for the samples grown on the implanted GaN substrates what provides a strong experimental support that point defects play important role in InGaN decomposition at high temperatures.

Analysis of InGaN/GaN single quantum wells by X-ray scattering and transmission electron microscopy

2003 ◽  
Vol 240 (2) ◽  
pp. 297-300 ◽  
Author(s):  
T. M. Smeeton ◽  
M. J. Kappers ◽  
J. S. Barnard ◽  
M. E. Vickers ◽  
C. J. Humphreys
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Quantum Wells ◽  
Single Quantum ◽  
X Ray ◽  
X Ray Scattering ◽  
Transmission Electron ◽  
Ray Scattering

Structrual Characterization and Raman Scattering of Epitaxial Aluminum Nitride Thin Films on Si(111)

1992 ◽  
Vol 242 ◽  
Author(s):  
W. J. Meng ◽  
T. A. Perry ◽  
J. Heremans ◽  
Y. T. Cheng
Keyword(s):  
Thin Films ◽  
Aluminum Nitride ◽  
Raman Scattering ◽  
High Vacuum ◽  
Ultra High Vacuum ◽  
X Ray Diffraction ◽  
X Ray ◽  
Reactive Sputter Deposition ◽  
Transmission Electron ◽  
Substrate Temperatures

ABSTRACTThin films of aluminum nitride were grown epitaxially on Si(111) by ultra-high-vacuum dc magnetron reactive sputter deposition. Epitaxy was achieved at substrate temperatures of 600° C or above. We report results of film characterization by x-ray diffraction, transmission electron microscopy, and Raman scattering.

Epitaxial Pd-Doped LaFeO3 Films Grown on (100) SrTiO3 by Pulsed Laser Deposition

2014 ◽  
Vol 936 ◽  
pp. 282-286
Author(s):  
Ying Wen Duan
Keyword(s):  
Pulsed Laser Deposition ◽  
Pulsed Laser ◽  
Film Surface ◽  
Laser Deposition ◽  
Structural Quality ◽  
Deposition Technique ◽  
X Ray Diffraction ◽  
Orientation Relationships ◽  
X Ray ◽  
Transmission Electron

Single-crystalline, epitaxial LaFeO3 films with 5 at. % substitution of Pd on the Fe site are grown on (100) SrTiO3 substrate by pulsed-laser deposition technique. The epitaxial orientation relationships are (110)[001]LFPO||(100)[001]STO. X-ray diffraction and transmission electron microscopy reveal that the LFPO films have high structural quality and an atomically sharp LFPO/STO interface. After reduction treatments of as-grown LFPO films, very little Pd escaped the LFPO lattice onto the film surface, the formed Pd (100) particles are oriented epitaxially, and parallel to the LFPO films surface.

scholarly journals Synthesis of Flower-Like Cu2ZnSnS4Nanoflakes via a Microwave-Assisted Solvothermal Route

2014 ◽  
Vol 2014 ◽  
pp. 1-4 ◽  
Author(s):  
Fei Long ◽  
Shuyi Mo ◽  
Yan Zeng ◽  
Shangsen Chi ◽  
Zhengguang Zou
Keyword(s):  
Electron Microscopy ◽  
Raman Scattering ◽  
Zinc Acetate Dihydrate ◽  
X Ray Diffraction ◽  
One Pot ◽  
X Ray ◽  
Transmission Electron ◽  
Direct Band ◽  
Xrd Patterns ◽  
Average Size

Flower-like Cu2ZnSnS4(CZTS) nanoflakes were synthesized by a facile and fast one-pot solution reaction using copper(II) acetate monohydrate, zinc acetate dihydrate, tin(IV) chloride pentahydrate, and thiourea as starting materials. The as-synthesized samples were characterized by X-ray diffraction (XRD), Raman scattering analysis, field emission scanning electron microscopy (FESEM) equipped with an energy dispersion X-ray spectrometer (EDS), transmission electron microscopy (TEM), and UV-Vis absorption spectra. The XRD patterns shown that the as-synthesized particles were kesterite CZTS and Raman scattering analysis and EDS confirmed that kesterite CZTS was the only phase of product. The results of FESEM and TEM show that the as-synthesized particles were flower-like morphology with the average size of 1~2 μm which are composed of 50 nm thick nanoflakes. UV-Vis absorption spectrum revealed CZTS nanoflakes with a direct band gap of 1.52 eV.

Growth and characterization of type II ZnO/ZnSe core/shell nanowire arrays

2010 ◽  
Vol 25 (7) ◽  
pp. 1272-1277 ◽  
Author(s):  
Jinjian Zheng ◽  
Zhiming Wu ◽  
Weihuang Yang ◽  
Shuping Li ◽  
Junyong Kang
Keyword(s):  
Electron Microscopy ◽  
Chemical Vapor ◽  
Band Alignment ◽  
Nanowire Arrays ◽  
Core Shell ◽  
Type Ii ◽  
X Ray Diffraction ◽  
X Ray ◽  
Transmission Electron ◽  
Potential Applications

Type II ZnO/ZnSe core/shell nanowire arrays were grown by a two-step chemical vapor deposition. The nanowire arrays with dense nanoislands on the surface are well aligned and normal to the substrate imaged by scanning electron microscopy. The core/shell structure of nanowires was identified by a high-resolution transmission electron microscopy. The structure and composition of the shell were confirmed to be wurtzite ZnSe by x-ray diffraction, Raman scattering and energy-dispersive x-ray spectroscopy. Moreover, an intense emission was observed at 1.89 eV smaller than the band gaps of core and shell materials by photoluminescence, indicating the achievement of the type II band alignment at the interface. This study is expected to contribute to the potential applications in novel photovoltaic devices.

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