High Quality In1-x(Gax)AsyP1-y/InP Compressive Strained Quantum Well Structures Grown by LP-MOCVD

1996 ◽  
Vol 421 ◽  
Author(s):  
J. T. Zhu ◽  
A. R. Clawson ◽  
P. K. L. Yu
Keyword(s):  
Quantum Wells ◽  
Growth Temperature ◽  
Chemical Vapor ◽  
Multiple Quantum ◽  
High Quality ◽  
Quantum Well Structures ◽  
Mocvd Growth ◽  
Buried Heterostructure ◽  
Strained Quantum Well

AbstractWe report the results of the growth of InAsyP1−y /InP and In0.86Ga0.14AS0.51P0.49/ In0.86Ga0.14As0.33P0.67 compressive strained multiple quantum wells (CSMQW) structures grown by low pressure metalorganic chemical vapor deposition (LP-MOCVD). Our studies showed high quality 1.06 μm InAs0.21P0.79/InP CSMQW structure with 6 periods can be obtained when the growth temperature is around 650°C and the pressure in the reactor is about 20 Torr. When the well thickness and composition are tuned for wavelength around 1.30 μm, the quality of this structure degrades. By employing 1.1 μm wavelength, lattice-matched InGaAsP as the barrier layers and setting the growth temperature at 600 °C, high quality 1.30 μm wavelength In0.86Ga0.14AS0.51P0.49/ In0.86Ga0.14As0.33P0.67 CSMQW materials with 10 periods can also be obtained. The materials were characterized with high resolution x-ray rocking curves, room and low temperature photoluminescence (PL). The 15K full-width-at-half-maximums (FWHM) of the PL peaks for 1.06 μm InAs0.21P0.79/InP and 1.30 μm In0.86Ga0.14AS0.51P0.49/ In0.86Ga0.14As0.33P0.67 CSMQW structures are 5.6 meV and 4.97 meV, respectively, which are among the smallest FWHMs reported up to date for these kinds of MOCVD growth materials. Buried heterostructure lasers at 1.3 μm wavelength have been obtained with the CSMQWs as the active layer.

scholarly journals Epitaxial Growth and Optically Pumped Stimulated Emission in AlGaN/InGaN Ultraviolet Multi-Quantum-Well Structures

2020 ◽  
Vol 49 (4) ◽  
pp. 2326-2331
Author(s):  
Ping Chen ◽  
Young Jae Park ◽  
Yuh-Shiuan Liu ◽  
Theeradetch Detchprohm ◽  
P. Douglas Yoder ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Thermal Effect ◽  
Epitaxial Growth ◽  
Growth Temperature ◽  
Optimal Growth ◽  
State Density ◽  
Stimulated Emission ◽  
Multiple Quantum ◽  
Quantum Well Structures ◽  
Localized State

AbstractThe thermal effect of the growth temperature on interface morphology and stimulated emission in ultraviolet AlGaN/InGaN multiple quantum wells (MQWs) are experimentally investigated. During the MOCVD epitaxial growth of AlGaN/InGaN MQWs, the ramping rate from a lower temperature for InGaN quantum wells (QWs) to a higher one for AlGaN quantum barriers (QBs) is intentionally changed from 1.0°C/s to 4.0°C/s. Atomic force microscopy images show that the surface morphology of InGaN QWs, which is improved by a thermal effect when the growth temperature rises to the set value of the AlGaN QBs, varies with different temperature ramping rates. The results of stimulated emission indicate that the threshold pumping power density of MQWs is decreased with increasing temperature ramping rate from 1.0°C/s to 3.0°C/s and then slightly increased when the ramping rate is 4.0°C/s. This phenomenon is believed to result from the thermal degradation effect during the temperature ramp step. A long-time high-temperature annealing will reduce the density of indium-rich microstructures as well as the corresponding localized state density, which is assumed to contribute to the radiative recombination in the InGaN QWs. Given the great difference between optimal growth temperatures for AlGaN and InGaN layers, a higher ramping rate would be more appropriate for the growth of ultraviolet AlGaN/InGaN MQWs.

1.95 μm Compressively Strained Ingaas/Ingaasp Quantum Well DFB Laser With Low Threshold

1997 ◽  
Vol 484 ◽  
Author(s):  
Jie Dong ◽  
Akinoi Ubukata ◽  
Koh Matsumoto
Keyword(s):  
Quantum Well ◽  
Quantum Wells ◽  
Chemical Vapor ◽  
Double Quantum ◽  
Maximum Output ◽  
Quantum Well Structures ◽  
Double Quantum Well ◽  
Different Temperatures ◽  
Dfb Laser ◽  
Strained Quantum Well

AbstractIn this study, we demonstrate the growth of highly compressively strained InGaAs/JnGaAsP quantum well structures with large well thiclmess by low pressure metalorganic chemical vapor deposition for extending the emission wavelength of lasers. By comparing the photolumineswnce characteristics of quantum wells grown at different temperatures, it is clarified that a relatively high quality quantum well layer emittig at 2.0 μ, can be obtained at a growth temperature of 650°C. 1.95-μm-wavelength InGaAs/InGaAsP highly compressively strained quantum well DFB laser for laser spectroscopy monitors was also fabricated. Double quantum-well DFB laser operating at 1.95 μm exhibits threshold currents as low as 6 mA and 6.2 mW maximum output powers. 2.04-μm-wavelength DFB laser is also described.

Comparative Study of GaN—Based LED Grown on Different Substrates

2011 ◽  
Vol 194-196 ◽  
pp. 2241-2244
Author(s):  
Dong Sheng Peng ◽  
Ke Jin ◽  
Rui Sheng Zheng ◽  
Lei Liu ◽  
Zhe Chuan Feng
Keyword(s):  
Quantum Wells ◽  
Sapphire Substrate ◽  
Silicon Substrate ◽  
Chemical Vapor ◽  
Multiple Quantum ◽  
X Ray Diffraction ◽  
Double Crystal ◽  
Light Emitting ◽  
Crystal Properties

The InGaN/GaN multiple quantum wells (MQWs) light emitting diodes (LEDs) were grown by metalorganic chemical vapor deposition (MOCVD) on silicon and sapphire substrates, respectively. The Optical and crystal properties of InGaN/GaN MQWs LEDs were investigated by room temperature photoluminescence (PL), temperature dependent PL measurements, Raman spectra and high-resolution double crystal X-ray diffraction(DCXRD). These results indicate that the crystal quality of InGaN/GaN MQWs growth on sapphire substrate are more preferable than that of InGaN/GaN MQWs growth on silicon substrate, and the interface of MQWs growth on substrate or silicon substrate is level. The peak positions of InGaN/GaN MQWs are 2.78 eV (446nm) and 2.64 eV (468.8nm) growth on sapphire substrate and silicon substrate, respectively.

Laser-Modified Chemical Beam Epitaxy of InGaAs/GaAs Multiple Quantum Wells Using Tris-Dimethylaminoarsenic

1994 ◽  
Vol 354 ◽  
Author(s):  
H.K. Dong ◽  
N.Y. Li ◽  
C.W. Tu
Keyword(s):  
Quantum Well ◽  
Quantum Wells ◽  
Laser Irradiation ◽  
Multiple Quantum Well ◽  
Multiple Quantum ◽  
Chemical Beam Epitaxy ◽  
Quantum Well Structures ◽  
X Ray ◽  
Strained Quantum Well ◽  
First Time

AbstractWe report for the first time laser-modified chemical beam epitaxy (CBE) of InGaAs/GaAs multiple quantum well (MQW) structures using trimethylindium (TMIn), triethylgallium (TEGa), and tris-dimethylaminoarsenic (TDMAAs), a safer alternative to arsine. X-ray rocking curve (XRC) and low-temperature photoluminescence (PL) measurements were used to characterize the pseudomorphic strained quantum well structures. As determined by the X-ray simulation, laser irradiation during the InGaAs well growth was found to enhance the InGaAs growth rate and reduce the indium concentration in the substrate temperature range studied, 440-S00°C, where good interfaces can be achieved. We attribute these changes to laser-enhanced decomposition of TEGa and laser-enhanced desorption of TDMAAs. With laser irradiation, lateral variation of PL exciton peaks was observed, and the PL peaks became narrower.

MOCVD Growth and Characterization of GaInNAs/GaAs/InGaAs/GaAs Quantum Well Structures

2002 ◽  
Vol 744 ◽  
Author(s):  
Abdel-Rahman A. El-Emawy ◽  
Hongjun Cao ◽  
Noppadon Nuntawong ◽  
Chiyu Liu ◽  
Marek Osiński
Keyword(s):  
Quantum Well ◽  
Quantum Wells ◽  
Growth Parameters ◽  
Multiple Quantum Well ◽  
Double Quantum ◽  
Multiple Quantum ◽  
Quantum Well Structures ◽  
Mocvd Growth ◽  
Double Quantum Well ◽  
Wavelength Emission

ABSTRACTEffects of MOCVD growth parameters on structural and optical properties of double-quantum-well (DQW) structures containing uncoupled GaInNAs/GaAs and InGaAs/GaAs quantum wells have been investigated. By varying growth temperature, growth rate, V/III ratio, and DMHy flow rates, we have achieved a longer-wavelength emission from a GaInNAs well than from an InGaAs well grown in the same structure. GaInNAs/GaAs multiple-quantum-well structures grown under optimum conditions emitted at 1.25 μm.

scholarly journals Direct Growth of AlGaN Nanorod LEDs on Graphene-Covered Si

Materials ◽  
2018 ◽  
Vol 11 (12) ◽  
pp. 2372 ◽  
Author(s):  
Fang Ren ◽  
Yue Yin ◽  
Yunyu Wang ◽  
Zhiqiang Liu ◽  
Meng Liang ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Quantum Wells ◽  
Electron Backscatter Diffraction ◽  
Single Layer ◽  
Chemical Vapor ◽  
Single Layer Graphene ◽  
Metal Catalyst ◽  
Organic Chemical ◽  
Multiple Quantum ◽  
Mocvd Growth

High density of defects and stress owing to the lattice and thermal mismatch between nitride materials and heterogeneous substrates have always been important problems and limit the development of nitride materials. In this paper, AlGaN light-emitting diodes (LEDs) were grown directly on a single-layer graphene-covered Si (111) substrate by metal organic chemical vapor deposition (MOCVD) without a metal catalyst. The nanorods was nucleated by AlGaN nucleation islands with a 35% Al composition, and included n-AlGaN, 6 period of AlGaN multiple quantum wells (MQWs), and p-AlGaN. Scanning electron microscopy (SEM) and electron backscatter diffraction (EBSD) showed that the nanorods were vertically aligned and had an accordant orientation along the [0001] direction. The structure of AlGaN nanorod LEDs was investigated by scanning transmission electron microscopy (STEM). Raman measurements of graphene before and after MOCVD growth revealed the graphene could withstand the high temperature and ammonia atmosphere in MOCVD. Photoluminescence (PL) and cathodoluminescence (CL) characterized an emission at ~325 nm and demonstrated the low defects density in AlGaN nanorod LEDs.

Growth and Characterization Of GexSi1−x/ Si Multiple Quantum Well Structures

1992 ◽  
Vol 263 ◽  
Author(s):  
D.W. Greve ◽  
R. Misra ◽  
M.A. Capano ◽  
T.E. Schlesinger
Keyword(s):  
Quantum Well ◽  
Quantum Wells ◽  
Multiple Quantum Well ◽  
Small Variation ◽  
Multiple Quantum ◽  
X Ray Diffraction ◽  
High Quality ◽  
Quantum Well Structures ◽  
X Ray

ABSTRACTWe report on the growth and characterization of multiple quantum well structures by UHV/ CVD epitaxy. X- ray diffraction is used to verify the expected layer periodicity and to determine the quantum well thickness. Photoluminescence measurements show peaks which we associate with recombination of excitons in the quantum wells. The measurements are consistent with high quality layers with small variation in quantum well thickness across a wafer.

Selective Area Growth of GaN Nano Islands by Metal Organic Chemical Vapor Deposition: Experiments and Computer Simulations

2006 ◽  
Vol 955 ◽  
Author(s):  
Anilkumar Chandolu ◽  
Gela D Kipshidze ◽  
Sergey A Nikishin ◽  
Lu Tian ◽  
Song Daoying ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Surface Diffusion ◽  
Growth Parameters ◽  
Chemical Vapor ◽  
Organic Chemical ◽  
Multiple Quantum ◽  
Mocvd Growth ◽  
Narrow Line Width ◽  
Metal Organic ◽  
And Control

ABSTRACTWe report the properties of GaN islands selectively grown by MOCVD on (0001) GaN/sapphire templates and on bare (0001) sapphire substrates. The approach allows us to grow GaN crystals with control over size and density through optical (micro-scale) and e-beam (nano-scale) lithography, and control over shape through MOCVD growth parameters. We have obtained complete pyramidal and prismatic hexagonal GaN islands. The growth characteristics are found to be very different from what we obtain for epitaxial layers, an effect which is attributed to micro/nanoloading and surface diffusion of source materials on the hard mask. From the dependence of growth rate of the pyramids with pitch we evaluate Ga surface diffusion length of ∼ 10 μm over SiO2 mask. We present a growth model based on diffusion and discuss the results of modeling with experimental data. Using micro-Raman spectroscopy the stress in pyramidal and prismatic islands was evaluated to be 20 MPa and 85 MPa, respectively. This implies that the selectively grown islands are relatively more relaxed compared to similar thickness of uniform layers. Micro catholdoluminescence (CL) shows a narrow line width and a better quality of GaN nano islands grown on e-beam lithography patterned templates. The GaN islands, of varying shapes, were overgrown with InGaN multiple quantum wells, which showed a few times stronger micro-CL emission than from GaN.

Polarization Effects in the Photoluminescence of AlGaN and AlInGaN Based Quantum Well Structures

2001 ◽  
Vol 693 ◽  
Author(s):  
Mee-Yi Ryu ◽  
E. Kuokstis ◽  
C. Q. Chen ◽  
J. P. Zhang ◽  
J. W. Yang ◽  
...  
Keyword(s):  
Quantum Well ◽  
Quantum Wells ◽  
Electric Fields ◽  
Chemical Vapor ◽  
Atomic Layer ◽  
Internal Field ◽  
Peak Position ◽  
Excitation Power ◽  
Multiple Quantum ◽  
Quantum Well Structures

AbstractWe have analyzed photoluminescence (PL) dynamics of GaN/AlGaN and AlInGaN/AlInGaN multiple quantum wells (MQWs) with different well and barrier widths. The quantum structures were grown by conventional metalorganic chemical vapor deposition and novel pulsed atomic layer epitaxy. In both types of MQWs a blueshift followed by a redshift of the PL peak position were observed with increasing excitation power, which we attributed to the screening of built-in electric fields and band gap renormalization, respectively. In bulk AlInGaN material or in MQWs with thin well widths the blueshift was not observed. This means that the incorporation of In into AlInGaN material in the amount required to fabricate smooth layers with strong emission at 330-350 nm does not create significant concentration of band-tail states. We have also evaluated the internal field in the MQW structures by comparing the experimental PL data to the simulations based on triangular quantum well model resulting from the polarization fields.

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