A tilting high temperature gas reaction chamber for the JEM 7A T.E.M.

1978 ◽  
Vol 36 (1) ◽  
pp. 70-71
Author(s):  
Brian L. Rhoades
Keyword(s):  
Cross Section ◽  
Reaction Chamber ◽  
Objective Lens ◽  
Reduced Cross Section ◽  
Cross Sectional ◽  
Structural Investigations ◽  
Transmission Electron ◽  
Dynamic Experiments ◽  
Successful Design ◽  
Thermocouple Junction

A gas reaction chamber has been designed and constructed for the JEM 7A transmission electron microscope which is based on a notably successful design by Hashimoto et. al. but which provides specimen tilting facilities of ± 15° aboutany axis in the plane of the specimen.It has been difficult to provide tilting facilities on environmental chambers for 100 kV microscopes owing to the fundamental lack of available space within the objective lens and the scope of structural investigations possible during dynamic experiments has been limited with previous specimen chambers not possessing this facility.A cross sectional diagram of the specimen chamber is shown in figure 1. The specimen is placed on a platinum ribbon which is mounted on a mica ring of the type shown in figure 2. The ribbon is heated by direct current, and a thermocouple junction spot welded to the section of the ribbon of reduced cross section enables temperature measurement at the point where localised heating occurs.

A Field Emission System For Transmission Electron Microscopy

1973 ◽  
Vol 31 ◽  
pp. 298-299
Author(s):  
Michel Troyonal ◽  
Huei Pei Kuoal ◽  
Benjamin M. Siegelal
Keyword(s):  
Electron Microscope ◽  
Field Emission ◽  
Optical System ◽  
High Vacuum ◽  
Ultra High Vacuum ◽  
Objective Lens ◽  
Electron Optical System ◽  
Cross Sectional ◽  
Transmission Electron ◽  
Emission System

A field emission system for our experimental ultra high vacuum electron microscope has been designed, constructed and tested. The electron optical system is based on the prototype whose performance has already been reported. A cross-sectional schematic illustrating the field emission source, preaccelerator lens and accelerator is given in Fig. 1. This field emission system is designed to be used with an electron microscope operated at 100-150kV in the conventional transmission mode. The electron optical system used to control the imaging of the field emission beam on the specimen consists of a weak condenser lens and the pre-field of a strong objective lens. The pre-accelerator lens is an einzel lens and is operated together with the accelerator in the constant angular magnification mode (CAM).

Microstructure of laser-irradiated, conducting Kapton polyimide

1995 ◽  
Vol 53 ◽  
pp. 502-503
Author(s):  
D. L. Callahan ◽  
Z. Ball ◽  
H. M. Phillips ◽  
R. Sauerbrey
Keyword(s):  
Electron Microscopy ◽  
Phase Transition ◽  
Transmission Electron Microscopy ◽  
Cross Section ◽  
Film Surface ◽  
Cross Sectional ◽  
General Utility ◽  
Transmission Electron ◽  
Considerable Debate ◽  
Potential Applications

Ultraviolet laser-irradiation can be used to induce an insulator-to-conductor phase transition on the surface of Kapton polyimide. Such structures have potential applications as resistors or conductors for VLSI applications as well as general utility electrodes. Although the percolative nature of the phase transformation has been well-established, there has been little definitive work on the mechanism or extent of transformation. In particular, there has been considerable debate about whether or not the transition is primarily photothermal in nature, as we propose, or photochemical. In this study, cross-sectional optical microscopy and transmission electron microscopy are utilized to characterize the nature of microstructural changes associated with the laser-induced pyrolysis of polyimide.Laser-modified polyimide samples initially 12 μm thick were prepared in cross-section by standard ultramicrotomy. Resulting contraction in parallel to the film surface has led to distortions in apparent magnification. The scale bars shown are calibrated for the direction normal to the film surface only.

Crystallization of Germanium-Carbon Alloys - Structure and Electronic Transport

1997 ◽  
Vol 467 ◽  
Author(s):  
T.-M. John ◽  
J. Bläsing ◽  
P. Veit ◽  
T. Drüsedau
Keyword(s):  
Electron Microscopy ◽  
Crystallite Size ◽  
Electronic Transport ◽  
Cluster Formation ◽  
Electronic Conductivity ◽  
Rf Magnetron Sputtering ◽  
Cross Sectional ◽  
Structural Investigations ◽  
X Ray ◽  
Transmission Electron

ABSTRACTAmorphous Ge1-xCx alloys were deposited by rf-magnetron sputtering from a germanium target in methane-argon atmosphere. Structural investigations were performed by means of wide and small angle X-ray scattering, X-ray reflectometry and cross-sectional transmission electron microscopy. The electronic transport properties were characterized using Hall-measurements and temperature depended conductivity. The results of X-ray techniques together with the electron microscopy clearly proof the existence of a segregation of the components and cluster formation already during deposition. The temperature dependence of the electronic conductivity in the as-prepared films follows the Mott' T−1/4 law, indicating transport by a hopping process. After annealing at 870 K, samples with x≤0.4 show crystallization of the Ge-clusters with a crystallite size being a function of x. After Ge-crystallization, the conductivity increases by 4 to 5 orders of magnitude. Above room temperature, electronic transport is determined by a thermally activated process. For lower temperatures, the σ(T) curves show a behaviour which is determined by the crystallite size and the free carrier concentration, both depending on the carbon content.

The Challenge and Methods of TEM Cross-Sectioning of < 0.25 Micron Plugs

1998 ◽  
Vol 523 ◽  
Author(s):  
C. Amy Hunt ◽  
Yuhong Zhang ◽  
David Su
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Sample Preparation ◽  
Failure Analysis ◽  
Cross Section ◽  
Adhesion Layer ◽  
Cross Sectional ◽  
Transmission Electron ◽  
Sectional Plane ◽  
Preparation Techniques

AbstractTransmission electron microscopy (TEM) is a useful tool in process evaluation and failure analysis for semiconductor industries. A common focus of semiconductor TEM analyses is metalization vias (plugs) and it is often desirable to cross-section through a particular one. If the cross-sectional plane deviates away from the center of the plug, then the thin adhesion layer around the plug will be blurred by surrounding materials such as the inter-layer dielectric and the plug material. The importance of these constraints, along with the difficulty of precision sample preparation, has risen sharply as feature sizes have fallen to 0.25 μm and below. The suitability of common sample preparation techniques for these samples is evaluated.

Gas reaction chamber for gas-solid interaction studies by high-resolution TEM

1994 ◽  
Vol 52 ◽  
pp. 494-495 ◽  
Author(s):  
Renu Sharma ◽  
Karl Weiss ◽  
Michael McKelvy ◽  
William Glaunsinger
Keyword(s):  
Electron Microscope ◽  
High Resolution ◽  
Cross Section ◽  
Reaction Chamber ◽  
Side View ◽  
Transmission Electron ◽  
Environmental Cell ◽  
High Resolution Tem ◽  
Recent Developments ◽  
High Resolution Images

An environmental cell (E-cell) is a gas reaction chamber mounted inside an electron microscope column where thin solid samples can be observed under various gases (O2, H2, N2, NH3 etc.) at selected temperatures. Even though the idea of having an E-cell incorporated in the microscope column is as old as transmission electron microscopy itself, recent developments in the instrumentation and designs of both the microscopes and E-cells have made it possible to obtain high resolution images (0.3-0.6 nm). We have used the differentially pumped model proposed by Swan to modify a PHILLIPS 400T transmission electron microscope for gas-solid studies.Figure la shows a side view cross section schematic of the E-cell fitted in the 9 mm gap between twin lens objective pole pieces. It consists of a small chamber with 200 and 400 μm apertures on sides a and a’ respectively. The walls are machined at the same angle as the pole pieces for an optimum fit to the conical exterior of the pole pieces and the cell is held firmly in place with o-rings (b).

Preparation of Cross-Sectional TEM Samples of Fe-Zn Couples

1991 ◽  
Vol 254 ◽  
Author(s):  
L. A. Giannuzzi ◽  
P. R. Howell ◽  
H. W. Pickering ◽  
W. R. Bidter
Keyword(s):  
Electron Microscope ◽  
Liquid Nitrogen ◽  
Cross Section ◽  
Transmission Electron Microscope ◽  
Preparation Technique ◽  
Ion Milling ◽  
Tem Analysis ◽  
Cross Sectional ◽  
Cold Stage ◽  
Transmission Electron

AbstractA preparation technique for the production of cross-sectional transmission electron microscope (TEM) samples from the interdiffusion regions of Fe-Zn binary couples is described. To alleviate the problem of unequal ion milling rates between the Fe and Zn, a 0.75mm thick Fe sheet has been double plated with a thick electrodeposited Zn coating to achieve a total couple thickness of ˜3mm. After slicing the couple in cross-section, the Fe region of the sample is dimpled to perforation near the Fe-Zn interface. Final thinning for TEM analysis is obtained by ion milling using a liquid nitrogen cold stage and sector speed control. The ion milling procedure is stopped when the perforated hole in the Fe-side of the couple extends through the faster eroding Zn-side of the interface. This technique, in modified form, is expected to be suitable for commercial steels coated with Zn-based alloys.

Direct Observation of A 7×7 Superstructure Buried at the Amorphous-Si / Si(111) Interface

1989 ◽  
Vol 159 ◽  
Author(s):  
Akira Sakai ◽  
Toru Tatsumi ◽  
Koichi Ishida
Keyword(s):  
Cross Section ◽  
Image Matching ◽  
Hrtem Image ◽  
Atomic Configuration ◽  
Cross Sectional ◽  
Transmission Electron ◽  
Matching Technique ◽  
Amorphous Si ◽  
Simulated Images ◽  
Cross Section Geometry

ABSTRACTDirect imaging of a 7×7 superstructure buried at the interface between amorphous-Si and a Si(111) substrate was demonstrated by cross-sectional high resolution transmission electron microscopy (HRTEM). The electron diffraction pattern of the interface region in cross-section geometry showed diffuse streaks of fractional order which suggested the existence of the superstructure at the interface. The <110> cross-sectional HRTEM image showed the atomic configuration of the projected interface superstructure, which had a periodicity of 23 Å along the interface. Such periodicity corresponds to 7 times the 1/3{224} periodicity which is 3.3 Å at the interface. The interface atomic model of the buried 7×7 superstructure was also proposed by using the image matching technique between the experimental and computer simulated images.

Multi-dimensional and multi-signal approaches in scanning transmission electron microscopes

2009 ◽  
Vol 367 (1903) ◽  
pp. 3845-3858 ◽  
Author(s):  
C. Colliex ◽  
N. Brun ◽  
A. Gloter ◽  
D. Imhoff ◽  
M. Kociak ◽  
...  
Keyword(s):  
Energy Resolution ◽  
Spherical Aberration ◽  
Objective Lens ◽  
Performance Limits ◽  
Transmission Electron ◽  
Scanning Transmission ◽  
Successful Design ◽  
Electron Microscopes ◽  
Data Acquisition And Processing ◽  
Available Information

Developments in instrumentation are essential to open new fields of science. This clearly applies to electron microscopy, where recent progress in all hardware components and in digitally assisted data acquisition and processing has radically extended the domains of application. The demonstrated breakthroughs in electron optics, such as the successful design and practical realization and the use of correctors, filters and monochromators, and the permanent progress in detector efficiency have pushed forward the performance limits, in terms of spatial resolution in imaging, as well as for energy resolution in electron energy-loss spectroscopy (EELS) and for sensitivity to the identification of single atoms. As a consequence, the objects of the nanoworld, of natural or artificial origin, can now be explored at the ultimate atomic level. The improved energy resolution in EELS, which now encompasses the near-IR/visible/UV spectral domain, also broadens the range of available information, thus providing a powerful tool for the development of nanometre-level photonics. Furthermore, spherical aberration correctors offer an enlarged gap in the objective lens to accommodate nanolaboratory-type devices, while maintaining angström-level resolution for general characterization of the nano-object under study.

Mechanistic Understanding of the Stress-Induced Failure of Si3N4 Metal-Insulator-Metal Capacitors

2001 ◽  
Vol 695 ◽  
Author(s):  
Dongwoo Suh ◽  
Bongki Mheen ◽  
Seung-Yun Lee ◽  
Kyu-Hwan Shim ◽  
Jin-Yeong Kang
Keyword(s):  
Residual Stress ◽  
Stress Analysis ◽  
Chemical Vapor ◽  
Point Of View ◽  
Cross Sectional ◽  
Metal Insulator ◽  
Transmission Electron ◽  
Metal Insulator Metal ◽  
Successful Design ◽  
Mim Capacitors

ABSTRACTThe failure of Si3N4 metal-insulator-metal (MIM) capacitors fabricated by plasma enhanced chemical vapor deposition (PECVD) was investigated using cross-sectional transmission electron microscopy (XTEM) and residual stress analysis. As a result we noted that the failure of the Si3N4 MIM capacitors originated from the microvoids formed over the Si3N4 dielectric and the TiN interlayer. The microvoid of the MIM capacitor, particularly in case of having a very thin Si3N4 of less than 50 nm-thick, caused it to leak out much of the current to the extent of a few microamperes even at bias of 3 volts. The formation of microvoids was explained by the residual stress of the constituent layers at a mechanistic point of view. The stress analysis showed that the absolute stress normalized by the thickness of the Si3N4 layer should be less than 31 MPa/nm to avoid microvoiding. In this research it was noted in conclusion that the stress state of not only the dielectric but also the interlayer should be taken into account for the successful design of high capacitive Si3N4 MIM capacitors.

Cross-section TEM observation of Ba2YCu3O7-x thin film on SrTiO3

1988 ◽  
Vol 46 ◽  
pp. 954-955
Author(s):  
Masato Tomita ◽  
Takayoshi Hayashi ◽  
Hidetoshi Takaoka ◽  
Yoshikazu Ishii ◽  
Youichi Enomoto ◽  
...  
Keyword(s):  
Thin Film ◽  
Cross Section ◽  
Cross Sections ◽  
Incident Angle ◽  
Annealed Film ◽  
Film Structure ◽  
Cross Sectional ◽  
X Ray ◽  
Transmission Electron ◽  
Film Substrate

The structure of Ba2YCu3O7-x(BYCO) has been almost completely analyzed using neutron,x-ray, and electron diffraction techniques. However, most of these analyses have studied bulk polycrystallinites or single crystals of BYCO, not the thin film structure. In this study, cross sections of thin annealed films on SrTiO3 substrate are observed using transmission electron microscopy (TEM). The crystal structure near the film/substrate interface is examined.The samples for TEM observation were cut from the same film which showed an onset temperature of 80 K. Samples for cross-sectional TEM observation were prepared by the ordinary method without using water. Milling was performed using a 4 kV Ar+ beam at an incident angle of about 15°. Observation was performed using a JEOL JEM 4000EX microscope at an accelerating voltage of 400 kV.A low magnification cross-sectional image of the BYCO annealed film is shown in Fig. 1. The film thickness is about 0.7 μm.

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