Buried SiC Layers in (100) Bulk Silicon and Silicon-on-Sapphire Produced by Carbon Ion Implantation
Keyword(s):
X Ray
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ABSTRACTWe demonstrate the formation of buried layers of SiC in (100) single-crystal bulk Si and silicon-on-sapphire by ion implantation of 125-180 keV, (0.56-1.00)×1018 C/cm2 at 30-40 μA/cm2 into samples held at 450-650¼C. The as-implanted and 950°C annealed samples are characterized by differential infra-red absorbance and reflectance, Rutherford backscattering and channeling spectrometry, X-ray diffraction, four-point probe, Dektak profilometry, I-V measurements, spreading resistance and secondary ion mass spectrometry.