Nanostructured Silicon thin films Deposited by PECVD in the Presence of Silicon Nanoparticles

1997 ◽  
Vol 467 ◽  
Author(s):  
G. Viera ◽  
P. Roca i Cabarrocas ◽  
S. Hamma ◽  
S. N. Sharma ◽  
J. Costa ◽  
...  
Keyword(s):  
Thin Films ◽  
Silicon Nanoparticles ◽  
Film Growth ◽  
Electrical Characterization ◽  
Chemical Vapor ◽  
X Ray Diffraction ◽  
Silicon Matrix ◽  
Silicon Thin Films ◽  
Nanostructured Silicon ◽  
Transmission Electron

ABSTRACTNanostructured silicon thin films have been deposited by plasma enhanced chemical vapor deposition at low substrate temperature (100 °C) in the presence of silicon nanoparticles. The nanostructure of the films was revealed by transmission electron microscopy, Raman spectroscopy and X-ray diffraction, which showed ordered silicon domains (1–2 nm) embedded in an amorphous silicon matrix. These ordered domains are due to the particles created in the discharge that contribute to the film growth. One consequence of the incorporation of nanoparticles is the accelerated crystallization of the nanostructured silicon thin films when compared to standard a-Si:H, as shown by the electrical characterization during the annealing.

scholarly journals Effect of the Nanoparticles on the Structure and Crystallization of Amorphous Silicon Thin Films Produced by rf Glow Discharge

1998 ◽  
Vol 13 (9) ◽  
pp. 2476-2479 ◽  
Author(s):  
E. Bertran ◽  
S. N. Sharma ◽  
G. Viera ◽  
J. Costa ◽  
P. St'ahel ◽  
...  
Keyword(s):  
Thin Films ◽  
Amorphous Silicon ◽  
Silicon Nanoparticles ◽  
Continuous Wave ◽  
Chemical Vapor ◽  
Hydrogen Gas ◽  
Electrical Measurements ◽  
Silicon Thin Films ◽  
Transmission Electron ◽  
Rf Glow Discharge

Thin films of nanostructured silicon (ns-Si:H) were deposited by plasma-enhanced chemical vapor deposition in the presence of silicon nanoparticles at 100 °C substrate temperature using a silane and hydrogen gas mixture under continuous wave (cw) plasma conditions. The nanostructure of the films has been demonstrated by diverse ways: transmission electron microscopy, Raman spectroscopy, and x-ray diffraction, which have shown the presence of ordered silicon clusters (1–2 nm) embedded in an amorphous silicon matrix. Because of the presence of these ordered domains, the films crystallize faster than standard hydrogenated amorphous silicon samples, as evidenced by electrical measurements during the thermal annealing.

The Structure of Silicon Thin Films Grown on Sapphire by MBE

1987 ◽  
Vol 107 ◽  
Author(s):  
M. E. Twigg ◽  
J. G. Pellegrino ◽  
E. D. Richmond
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Vapor Deposition ◽  
Molecular Beam ◽  
Film Growth ◽  
Chemical Vapor ◽  
Thin Film Growth ◽  
Silicon Thin Film ◽  
Silicon Thin Films ◽  
Transmission Electron

AbstractFrom a series of imaging experiments performed in the transmission electron microscope (TEM), it is apparent that for silicon grown on sapphire (SOS) by molecular beam epitaxy (MBE), silicon thin film growth on the (1012) sapphire plane resembles that observed for analogous films grown by chemical vapor deposition (CVD). At 900°C very thin (150A) silicon films grow as islands with either the (001) or (110) planes parallel to the (1012) plane; it is also found that most of the silicon grows as (001) rather than (110) islands, as is true for CVD-grown SOS. The orientation, however, of (110) islands occuring in this MBE-grown SOS sample differs from that of (110) islands occuring in CVD-grown SOS. By following this initial 150A of growth with 2500A of silicon deposited at. 750°C, a continuous (001) film was grown in which microtwins appear to be the predominant defect. The MBE-grown SOS also resembles that grown by CVD in that the microtwin densities associated with the “majority” and “minority” twinning systems are influenced by the orientation of the sapphire substrate.

Structural Characterization and Crystallization Process of Nanostructured Silicon Thin Films Produced in Low-Pressure Silane Plasma

1998 ◽  
Vol 507 ◽  
Author(s):  
G. Viera ◽  
Proca i Cabarrocas ◽  
J. Costa ◽  
S. Martínez ◽  
E. Bertran
Keyword(s):  
Thin Films ◽  
Raman Spectroscopy ◽  
Structural Characterization ◽  
Chemical Vapor ◽  
X Ray Diffraction ◽  
Two Phase ◽  
Silicon Thin Films ◽  
Nanostructured Silicon ◽  
Wide Range ◽  
Diffraction Patterns

ABSTRACTNanostructured silicon thin films (ns-Si:H), consisting of a two-phase mixture of amorphous and ordered material, were obtained by plasma-enhanced chemical vapor deposition (PECVD) under a wide range of plasma conditions. The key to embedding Si-ordered particles in the amorphous Si matrix was the formation of silicon clusters in the gas phase (diameter < 2nm) under conditions of plasma polymerization, and their incorporation into the growing films. The crystallization induced by thermal annealing in these nanostructured films can be attained faster than in conventional a-Si:H thin films, because the silicon-ordered particles cause a heterogeneous nucleation process in which they act as seeds for crystallization. In this work, we present a detailed structural characterization by using electron and X-ray diffraction patterns and Raman spectroscopy. The crystallization dynamics were studied in-situ by Raman spectroscopy.

DIRECT GROWTH OF EPITAXIAL La0.67Ca0.33MnO3 - δ THIN FILMS

2002 ◽  
Vol 09 (05n06) ◽  
pp. 1611-1615 ◽  
Author(s):  
G. CAMPILLO ◽  
L. F. CASTRO ◽  
P. VIVAS ◽  
E. BACA ◽  
P. PRIETO ◽  
...  
Keyword(s):  
Thin Films ◽  
Substrate Surface ◽  
Electrical Characterization ◽  
Annealing Treatment ◽  
Pure Oxygen ◽  
X Ray Diffraction ◽  
Atomic Force ◽  
Transmission Electron ◽  
Afm Analysis ◽  
Direct Growth

La 0.67 Ca 0.33 MnO 3 - δ thin films were deposited using a high-pressure dc-sputtering process. Pure oxygen at a pressure of 3.8 mbar was used as sputtering gas. The films were grown on (001) LaAlO 3 and (001) SrTiO 3 substrates at heater temperature of 850° without any annealing treatment. The formation of highly a-axis-oriented films with sharp interface with substrate surface is demonstrated by X-ray diffraction, transmission electron microscope (TEM), and atomic force microscope (AFM) analysis. Electrical characterization revealed a metal–insulator transition at T MI = 276 K, and magnetic characterization showed good magnetic properties with a PM–FM transition at TC ≈ 262 K.

Epitaxial Ferroelectric BaTiO3 Thin Films for Microphotonic Applications

2000 ◽  
Vol 637 ◽  
Author(s):  
F. Niu ◽  
A.R. Teren ◽  
B.H. Hoerman ◽  
B.W. Wessels
Keyword(s):  
Thin Films ◽  
Chemical Vapor ◽  
Silicon Substrates ◽  
X Ray Diffraction ◽  
Insulating Layer ◽  
Ferroelectric State ◽  
Transmission Electron ◽  
Electro Optic ◽  
Metal Organic ◽  
Mgo Layers

AbstractEpitaxial ferroelectric BaTiO3 thin films have been developed as a material for microphotonics. Efforts have been directed toward developing these materials for thin film electro-optic modulators. Films were deposited by metalorganic chemical vapor deposition (MOCVD) on both MgO and silicon substrates. The electro-optic properties of the thin films were measured. For BaTiO3 thin films grown on (100) MgO substrates, the effective electro-optic coefficient, reff depended on the magnitude and direction of the electric field. Coefficients as high as 260 pm/V have been measured. Investigation of BaTiO3 films on silicon has been undertaken. Epitaxial BaTiO3 thin films were deposited by MOCVD on (100) MgO layers grown on silicon (100) substrates by metal-organic molecular beam epitaxy (MOMBE). The MgO serves as the low index optical cladding layer as well as an insulating layer. X-ray diffraction and transmission electron microscopy (TEM) indicated that BaTiO3 was epitaxial with an orientational relation given by BaTiO3 (100)//Si (100) and BaTiO3[011]//Si [011]. Polarization measurements indicated that the BaTiO3 epitaxial films on Si were in the ferroelectric state.

scholarly journals Structural Property Study for GeSn Thin Films

Materials ◽  
2020 ◽  
Vol 13 (16) ◽  
pp. 3645
Author(s):  
Liyao Zhang ◽  
Yuxin Song ◽  
Nils von den Driesch ◽  
Zhenpu Zhang ◽  
Dan Buca ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Thin Films ◽  
Transmission Electron Microscopy ◽  
Molecular Beam ◽  
Chemical Vapor ◽  
Threading Dislocations ◽  
X Ray Diffraction ◽  
Cross Sectional ◽  
X Ray ◽  
Transmission Electron

The structural properties of GeSn thin films with different Sn concentrations and thicknesses grown on Ge (001) by molecular beam epitaxy (MBE) and on Ge-buffered Si (001) wafers by chemical vapor deposition (CVD) were analyzed through high resolution X-ray diffraction and cross-sectional transmission electron microscopy. Two-dimensional reciprocal space maps around the asymmetric (224) reflection were collected by X-ray diffraction for both the whole structures and the GeSn epilayers. The broadenings of the features of the GeSn epilayers with different relaxations in the ω direction, along the ω-2θ direction and parallel to the surface were investigated. The dislocations were identified by transmission electron microscopy. Threading dislocations were found in MBE grown GeSn layers, but not in the CVD grown ones. The point defects and dislocations were two possible reasons for the poor optical properties in the GeSn alloys grown by MBE.

Relating mechanical testing and microstructural features of polysilicon thin films

1999 ◽  
Vol 14 (3) ◽  
pp. 688-697 ◽  
Author(s):  
S. Jayaraman ◽  
R. L. Edwards ◽  
K. J. Hemker
Keyword(s):  
Thin Films ◽  
Elastic Constants ◽  
Crystalline Silicon ◽  
Silicon Substrates ◽  
X Ray Diffraction ◽  
Silicon Thin Films ◽  
Bulge Testing ◽  
Transmission Electron ◽  
Wide Range ◽  
Out Of Plane

Polycrystalline silicon thin films (polysilicon) have been deposited on single crystalline silicon substrates, and square and rectangular windows have been etched into these substrates using standard micromachining techniques. Pressure-displacement curves of the resulting polysilicon membranes have been obtained for these geometries, and this data has been used to determine the elastic constants E and v. The microstructural features of the films have been investigated by transmission electron microscopy (TEM) and x-ray diffraction. The grains were observed to be columnar and were found to have a 〈011〉 out-of-plane texture and a random in-plane grain orientation. A probabilistic model of the texture has been used to calculate the bounds of the elastic constants in the thin films. The results obtained from bulge testing (E = 162 ± 4 GPa and v = 0.20 ± 0.03) fall in the wide range of values previously reported for polysilicon and are in good agreement with the microsample tensile measurements conducted on films deposited in the same run as the present study (168 ± 2 GPa and 0.22 ± 0.01) and the calculated values of the in-plane moduli for 〈1103〉 textured films (E = 163.0–165.5 GPa and v = 0.221–0.239).

MOCVD Route to the Fabrication of Calcium Copper Titanate (CaCu3Ti4O12) Thin Films

2006 ◽  
Vol 45 ◽  
pp. 1194-1199
Author(s):  
Raffaella Lo Nigro ◽  
Roberta G. Toro ◽  
Graziella Malandrino ◽  
Ignazio L. Fragalà
Keyword(s):  
Electron Microscopy ◽  
Thin Films ◽  
Chemical Vapor ◽  
Organic Chemical ◽  
X Ray Diffraction ◽  
Molten Mixture ◽  
Calcium Copper Titanate ◽  
Novel Approach ◽  
Transmission Electron ◽  
Metal Organic

CaCu3Ti4O12 (CCTO) thin films have been successfully deposited by Metal Organic Chemical Vapor Deposition (MOCVD) technique. A novel approach based on a molten multicomponent precursor source has been applied. The molten mixture consists of the Ca(hfa)2•tetraglyme, Ti(tmhd)2(O-iPr)2, and Cu(tmhd)2 [Hhfa= 1,1,1,5,5,5-hexafluoro-2,4- pentanedione; tetraglyme= 2,5,8,11,14-pentaoxapentadecane; Htmhd= 2,2,6,6-tetramethyl-3,5- heptandione; O-iPr= iso-propoxide] precursors. Film complete structural and morphological characterizations have been carried out using several techniques [X-ray diffraction (XRD), scanning electron microscopy (SEM), transmission electron microscopy (TEM)].

Effects of Power Density and Thickness On Aluminum-Induced Crystallization of PECVD Amorphous Silicon

2007 ◽  
Vol 989 ◽  
Author(s):  
Kendrick S Hsu ◽  
Jeremy Ou-Yang ◽  
Li P. Ren ◽  
Grant Z. Pan
Keyword(s):  
Thin Films ◽  
Amorphous Silicon ◽  
Power Density ◽  
Reaction Temperature ◽  
Chemical Vapor ◽  
X Ray Diffraction ◽  
Transmission Electron ◽  
Temperature Scanning ◽  
Induced Crystallization ◽  
Aluminum Induced Crystallization

AbstractThe effect of power density and thickness on aluminum-induced crystallization (AIC) of amorphous silicon (a-Si) formed with plasma enhanced chemical vapor deposition (PECVD) was studied by using N2-protected conventional furnace reaction and optical microscopy. With the deposition power density ranging from 0.05 to 1.00 W/cm2 and the thickness from 500 to 5000Å, it was found that a low power density as well as a large a-Si thickness could result in a decrease of activation energy and therefore a significant reduction of the AIC reaction temperature. Scanning and transmission electron microscopy and X-ray diffraction were used to check the crystallinity and quality of the AIC thin films. High quality polysilicon thin films were achieved at an AIC reaction temperature as low as 120°C.

Heteroepitaxial Bi2Sr2CaCu2Ox Superconducting thin films Deposited on LaA1O3 by Solid Phase Epitaxy and OMCVD

1992 ◽  
Vol 275 ◽  
Author(s):  
J. Chen ◽  
H. A. Lu ◽  
F. DiMeo ◽  
B. W. Wessels ◽  
D. L. Schulz ◽  
...  
Keyword(s):  
Thin Films ◽  
Solid Phase ◽  
Chemical Vapor ◽  
Superconducting Thin Films ◽  
Epitaxial Thin Films ◽  
Solid Phase Epitaxy ◽  
X Ray Diffraction ◽  
Cross Sectional ◽  
Transmission Electron ◽  
Film Substrate

ABSTRACT-Heteroepitaxial superconducting Bi,Sr2CaCu2Ox (BSCCO 2212) thin films have been formed by solid phase epitaxy from amorphous films deposited on (100) LaA1O3 single crystal substrates by organometallic chemical vapor deposition. The epitaxial structure of the film is confirmed by x-ray diffraction including θ/2θ and Φ (in plane rotation) scans. Cross-sectional high resolution transmission electron microscopy indicates that the film-substrate interface is nearly atomically abrupt. Improvements in superconducting properties of the epitaxial thin films are noted in comparison to highly textured films deposited on MgO.

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