Relating mechanical testing and microstructural features of polysilicon thin films

1999 ◽  
Vol 14 (3) ◽  
pp. 688-697 ◽  
Author(s):  
S. Jayaraman ◽  
R. L. Edwards ◽  
K. J. Hemker
Keyword(s):  
Thin Films ◽  
Elastic Constants ◽  
Crystalline Silicon ◽  
Silicon Substrates ◽  
X Ray Diffraction ◽  
Silicon Thin Films ◽  
Bulge Testing ◽  
Transmission Electron ◽  
Wide Range ◽  
Out Of Plane

Polycrystalline silicon thin films (polysilicon) have been deposited on single crystalline silicon substrates, and square and rectangular windows have been etched into these substrates using standard micromachining techniques. Pressure-displacement curves of the resulting polysilicon membranes have been obtained for these geometries, and this data has been used to determine the elastic constants E and v. The microstructural features of the films have been investigated by transmission electron microscopy (TEM) and x-ray diffraction. The grains were observed to be columnar and were found to have a 〈011〉 out-of-plane texture and a random in-plane grain orientation. A probabilistic model of the texture has been used to calculate the bounds of the elastic constants in the thin films. The results obtained from bulge testing (E = 162 ± 4 GPa and v = 0.20 ± 0.03) fall in the wide range of values previously reported for polysilicon and are in good agreement with the microsample tensile measurements conducted on films deposited in the same run as the present study (168 ± 2 GPa and 0.22 ± 0.01) and the calculated values of the in-plane moduli for 〈1103〉 textured films (E = 163.0–165.5 GPa and v = 0.221–0.239).

Epitaxial Ferroelectric BaTiO3 Thin Films for Microphotonic Applications

2000 ◽  
Vol 637 ◽  
Author(s):  
F. Niu ◽  
A.R. Teren ◽  
B.H. Hoerman ◽  
B.W. Wessels
Keyword(s):  
Thin Films ◽  
Chemical Vapor ◽  
Silicon Substrates ◽  
X Ray Diffraction ◽  
Insulating Layer ◽  
Ferroelectric State ◽  
Transmission Electron ◽  
Electro Optic ◽  
Metal Organic ◽  
Mgo Layers

AbstractEpitaxial ferroelectric BaTiO3 thin films have been developed as a material for microphotonics. Efforts have been directed toward developing these materials for thin film electro-optic modulators. Films were deposited by metalorganic chemical vapor deposition (MOCVD) on both MgO and silicon substrates. The electro-optic properties of the thin films were measured. For BaTiO3 thin films grown on (100) MgO substrates, the effective electro-optic coefficient, reff depended on the magnitude and direction of the electric field. Coefficients as high as 260 pm/V have been measured. Investigation of BaTiO3 films on silicon has been undertaken. Epitaxial BaTiO3 thin films were deposited by MOCVD on (100) MgO layers grown on silicon (100) substrates by metal-organic molecular beam epitaxy (MOMBE). The MgO serves as the low index optical cladding layer as well as an insulating layer. X-ray diffraction and transmission electron microscopy (TEM) indicated that BaTiO3 was epitaxial with an orientational relation given by BaTiO3 (100)//Si (100) and BaTiO3[011]//Si [011]. Polarization measurements indicated that the BaTiO3 epitaxial films on Si were in the ferroelectric state.

Nanostructured Silicon thin films Deposited by PECVD in the Presence of Silicon Nanoparticles

1997 ◽  
Vol 467 ◽  
Author(s):  
G. Viera ◽  
P. Roca i Cabarrocas ◽  
S. Hamma ◽  
S. N. Sharma ◽  
J. Costa ◽  
...  
Keyword(s):  
Thin Films ◽  
Silicon Nanoparticles ◽  
Film Growth ◽  
Electrical Characterization ◽  
Chemical Vapor ◽  
X Ray Diffraction ◽  
Silicon Matrix ◽  
Silicon Thin Films ◽  
Nanostructured Silicon ◽  
Transmission Electron

ABSTRACTNanostructured silicon thin films have been deposited by plasma enhanced chemical vapor deposition at low substrate temperature (100 °C) in the presence of silicon nanoparticles. The nanostructure of the films was revealed by transmission electron microscopy, Raman spectroscopy and X-ray diffraction, which showed ordered silicon domains (1–2 nm) embedded in an amorphous silicon matrix. These ordered domains are due to the particles created in the discharge that contribute to the film growth. One consequence of the incorporation of nanoparticles is the accelerated crystallization of the nanostructured silicon thin films when compared to standard a-Si:H, as shown by the electrical characterization during the annealing.

Growth of ZnO Nanostructures at Different Temperatures without Catalyst by Wet Thermal Oxidation Process

2012 ◽  
Vol 620 ◽  
pp. 132-136 ◽  
Author(s):  
Hind I. Abdulgafour ◽  
Yushamdan Yusof ◽  
F.K. Yam ◽  
Hassan Zainuriah
Keyword(s):  
Oxidation Process ◽  
Zinc Powder ◽  
Silicon Substrates ◽  
Zno Nanostructures ◽  
X Ray Diffraction ◽  
X Ray ◽  
Transmission Electron ◽  
Wide Range ◽  
Different Temperatures ◽  
Evaporation Technique

In this study, an efficient method to achieve a wide range of high-quality zinc oxide (ZnO) nanostructures through zinc powder evaporation at different temperatures is developed. ZnO nanostructures could be synthesized on n-type silicon substrates by a simple thermal evaporation technique without a catalyst at 600°C, 700°C, 800°C, and 900°C. Samples are annealed in wet oxygen and ambient argon gases. Surface morphology, crystallinity, and optical properties of the ZnO nanostructures are examined by scanning electron microscopy and transmission electron microscope measurements, X-ray diffraction, and photoluminescence measurement.

Determination of the Mechanical Properties of Polysilicon Thin Films Using Bulge Testing

1997 ◽  
Vol 505 ◽  
Author(s):  
S. Jayaraman ◽  
R. L. Edwards ◽  
K. J. Hemker
Keyword(s):  
Thin Films ◽  
Mechanical Properties ◽  
Elastic Constants ◽  
Polycrystalline Silicon ◽  
Silicon Substrates ◽  
Bulge Testing ◽  
Good Agreement

ABSTRACTUsing standard deposition and micromachining techniques, silicon substrates with square and rectangular windows covered with membranes of polycrystalline silicon (polysilicon) have been fabricated. Pressure-displacement curves obtained during the bulge testing of membranes with the above geometries have been used to determine the elastic constants E and v of the polysilicon. The results obtained (E = 162± 4 GPa and v = 0.19±0.03) are in good agreement with literature values for bulk polycrystalline silicon.

Microstructural Property of Silicon Thin Films Deposited on Nanodiamonds Related to QALD Growth Condition

2011 ◽  
Vol 175 ◽  
pp. 226-230
Author(s):  
Jing Lu ◽  
Yan Hui Wang
Keyword(s):  
Thin Films ◽  
Silicon Film ◽  
Atomic Layer ◽  
X Ray Diffraction ◽  
Silicon Thin Films ◽  
Microstructural Property ◽  
Transmission Electron ◽  
Layer Deposition ◽  
Atomic Layer Deposition Method ◽  
Silicon Coating

Quasi atomic layer deposition method has been successfully used to coat detonation nanodiamonds with ultrathin silicon film from decomposition of gaseous monosilane. Transmission electron microscopy observation indicates a continuous silicon coating could be obtained on every individual particle of nanodiamonds. The changes in the microstructural property of silicon thin films deposited at the temperatures of 400, 450, 500, 550, and 600 °C have been characterized by Raman spectroscopy, X-ray diffraction and Energy dispersive spectroscopy techniques. The results show the phase transition of as-deposited silicon from a crystalline to an amorphous then to a crystalline phase with the temperature increase.

Synthesis and Selected Micro-Mechanical Properties of Titanium Nitride Thin Films by the Pyrolysis of Tetrakis Titanium in Ammonia.

1994 ◽  
Vol 363 ◽  
Author(s):  
Y. W. Bae ◽  
W. Y. Lee ◽  
T. M. Besmann ◽  
P. J. Blau ◽  
L. Riester
Keyword(s):  
Thin Films ◽  
Titanium Nitride ◽  
Electron Spectroscopy ◽  
Single Crystal Silicon ◽  
Chemical Vapor ◽  
Silicon Substrates ◽  
X Ray Diffraction ◽  
Crystal Silicon ◽  
Transmission Electron ◽  
Chemical Vapor Deposited

AbstractThin films of titanium nitride were chemical vapor deposited on (100)-oriented single-crystal silicon substrates from tetrakis (dimethylamino) titanium, Ti((CH3)2N)4, and ammonia gas mixtures in a cold-wall reactor at 623 K and 655 Pa. The films were characterized by Auger electron spectroscopy, X-ray diffraction, and transmission electron spectroscopy. The nano-scale hardness of the film, measured by nanoindentation, was 12.7±0.6 GPa. The average kinetic friction coefficient against unlubricated, type- 440C stainless steel was determined using a computer-controlled friction microprobe to be ∼0.43.

TiSi2 Thin Films Formed on Crystalline and Amorphous Silicon

1990 ◽  
Vol 182 ◽  
Author(s):  
Z.G. Xiao ◽  
H. Jiang ◽  
J. Honeycutt ◽  
C.M. Osburn ◽  
G. Mcguire ◽  
...  
Keyword(s):  
Thin Films ◽  
Amorphous Silicon ◽  
Silicon Substrates ◽  
X Ray Diffraction ◽  
Plan View ◽  
Si Substrates ◽  
Transmission Electron ◽  
Amorphous Si ◽  
Transformation Stress ◽  
Silicon Interface

AbstractTiSi2 thin films were formed on crystalline and amorphous silicon substrates obtained by Ge+ and Ge++B+ implantation and optional subsequent annealing. Transmission electron microscopy, X-ray diffraction and electrical resistivity analysis revealed that the silicide formed on amorphous Si has more tendency to have a C54 structure rather than the metastable C49 structure. Also, the grain size is smaller and the silicide/silicon interface is smoother for silicides formed on amorphous Si. Comparison between implanted and unimplanted, (100) and (111) Si substrates indicated that the origin of the differences can be attributed to the latent energy stored in amorphous silicon, which favors the silicide with fine grains and promotes the transformation to the C54 phase. Non-random distribution of planar defects in C49 grains has been observed by plan-view TEM. A proposal that these defects are transformation stress induced microtwins is presented.

Crystalline silicon thin films: A promising approach for photovoltaics?

1998 ◽  
Vol 13 (10) ◽  
pp. 2763-2774 ◽  
Author(s):  
A. Slaoui ◽  
R. Monna ◽  
J. Poortmans ◽  
T. Vermeulen ◽  
O. Evrard ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Surface Passivation ◽  
Crystalline Silicon ◽  
Silicon Substrates ◽  
Photovoltaic Devices ◽  
Silicon Thin Films ◽  
Liquid Phases ◽  
Starting Point ◽  
Bulk Passivation

In this paper we review the achievements in the field of silicon crystalline thin film solar cells and correlate these with the different types of growth techniques and substrates. As a starting point we discuss the characteristics of photovoltaic devices based on the use of highly doped monocrystalline substrates as mechanical carriers for the thin films. These films are epitaxially deposited from the gas (CVD) or liquid phase (LPE). The comparison of both techniques is extended to growth on defective silicon substrates, i.e., multicrystalline wafers or silicon ribbons. The intrinsic grain boundary recombination activity in the thin films is assessed as a function of the deposition technique. Bulk passivation by hydrogenation considerably improves the recombination properties. The optimization of the hydrogen passivation conditions is looked at in conjunction with the used surface passivation process. This review is completed with the approaches to realize thin film cells on nonsilicon substrates, including recrystallization in solid and liquid phases.

Tisi2 Thin Films Formed on Crystalline and Amorphous Silicon

1990 ◽  
Vol 181 ◽  
Author(s):  
Z.G. Xiao ◽  
H. Jiang ◽  
J. Honeycutt ◽  
C.M. Osburn ◽  
G. McGuire ◽  
...  
Keyword(s):  
Thin Films ◽  
Amorphous Silicon ◽  
Silicon Substrates ◽  
X Ray Diffraction ◽  
Plan View ◽  
Si Substrates ◽  
Transmission Electron ◽  
Amorphous Si ◽  
Transformation Stress ◽  
Silicon Interface

ABSTRACTTiSi2 thin films were formed on crystalline and amorphous silicon substrates obtained by Ge+ and Ge++B+ implantation and optional subsequent annealing. Transmission electron microscopy, X-ray diffraction and electrical resistivity analysis revealed that the silicide formed on amorphous Si has more tendency to have a C54 structure rather than the metastable C49 structure. Also, the grain size is smaller and the silicide/silicon interface is smoother for silicides formed on amorphous Si. Comparison between implanted and unimplanted, (100) and (111) Si substrates indicated that the origin of the differences can be attributed to the latent energy stored in amorphous silicon, which favors the silicide with fine grains and promotes the transformation to the C54 phase. Non-random distribution of planar defects in C49 grains has been observed by plan-view TEM. A proposal that these defects are transformation stress induced microtwins is presented.

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