Creation and Annealing out Mechanism of Defects in Ion-Implanted Si Crystals Investigated by Positron Annihilation

1997 ◽  
Vol 470 ◽  
Author(s):  
S. Tanigawa
Keyword(s):  
Ion Implantation ◽  
Positron Annihilation ◽  
Point Defects ◽  
General Feature ◽  
Positron Beam ◽  
Point Of View ◽  
Ion Energy ◽  
Energy Variable ◽  
Ion Species ◽  
Ion Implanted

ABATRACTVacancy-type defects in Si crystals introduced by ion implantation have been investigated by an energy-variable positron beam The present paper describes the general feature of point defects induced by ion implantation from the point of view of their dependence on implanted ion species, ion dose, ion energy, implanted targets, thermal after implantation, the presence of oxide overlayers and so on.

Defect Formation by Ion Implantation in Cz-Si Studied by a Monoenergetic Positron Beam

1992 ◽  
Vol 262 ◽  
Author(s):  
A. Uedono ◽  
Y. Ujihira ◽  
L. Wei ◽  
Y. Tabuki ◽  
S. Tanigawa ◽  
...  
Keyword(s):  
Oxygen Vacancy ◽  
Ion Implantation ◽  
Defect Formation ◽  
Positron Beam ◽  
Low Energy ◽  
Doppler Broadening ◽  
Positron Energy ◽  
Annealing Experiments ◽  
Incident Positron ◽  
Ion Implanted

ABSTRACTVacancy-type defects in ion implanted Si were studied by a monoenergetic positron beam. The depth-distributions of the defects were obtained from measurements of Doppler broadening profiles of the positron annihilation as a function of incident positron energy. The results showed that a size of vacany-clusters introduced by 150-keV P+-ion implantation was found to be smaller than that introduced by 2-MeV P+-ion implantation. This was attributed to an overlap of collision cascades in low-energy (150 keV) ion implanted specimens. From isochronal annealing experiments for 80-keV B+- and 150-keV P+-ion implanted specimens, the defected region was removed by 1200 °C annealing, however, for 2-MeV P+-implanted specimen, two-types of oxygen-vacancy complexes were found to coexist even after 1200 °C annealing.

Depth Profile Of Point Defects In Ion Implanted n+p and p+n Junctions Formed By 450°C Post-Implantation Annealing And Impact Of Defects On Junction Characteristics

1996 ◽  
Vol 442 ◽  
Author(s):  
Mauricio Massazumi Oka ◽  
Akira Nakada ◽  
Yukio Tamai ◽  
Kei Kanemoto ◽  
Tadashi Shibata ◽  
...  
Keyword(s):  
Ion Implantation ◽  
Point Defects ◽  
Substrate Type ◽  
Leakage Currents ◽  
Defect Clusters ◽  
Low Leakage ◽  
Low Leakage Current ◽  
Point Defect Clusters ◽  
Ion Species ◽  
Post Implantation

AbstractIt is shown that defects generated by ion implantation, remaining after annealing at low temperature, are deep-distributed in the bulk silicon and their amount is demonstrated to be function of the substrate type and the implanted ion species. The confirmation that defects penetrate deeply into the silicon is made by a new method that consists in damaging by ion implantation a previously formed pn junction that shows very low leakage current and has a deep junction. It is proposed that the dopants in the substrate act as nucleation centers for the formation of point defect clusters and that these clusters actually degrade the junction. It was found that point defects penetrate much more deeply in p+n junctions than in n+p junctions. It was also found that BF2+ introduces much more defects into the silicon than As+, owing to the presence of fluorine. The leakage currents at 5 V of n+p and p+n diodes made by implantation of P+ and B+, respectively, could be lowered by one to two orders of magnitude with respect to values obtained by implantation of As+ and BF2+ because the former ones produce less defects than the latter.

Positron spectroscopy of bulk and near-surface defects in semiconductors

1989 ◽  
Vol 67 (8) ◽  
pp. 813-817
Author(s):  
P. Hautojārvi
Keyword(s):  
Positron Annihilation ◽  
Positron Lifetime ◽  
Surface Defects ◽  
Positron Beam ◽  
Near Surface ◽  
Slow Positron ◽  
Positron Spectroscopy ◽  
Positron Lifetime Spectroscopy ◽  
Defects In Semiconductors ◽  
Ion Implanted

The use of positron annihilation to study defects in semiconductors is discussed. Positron-lifetime spectroscopy reveals As vacancies in as-grown GaAs and gives information on ionization levels. The vacancy profiles in ion-implanted Si are investigated by slow positron beam.

Ion Implantation Defects in 4H-SiC DIMOSFET

2016 ◽  
Vol 858 ◽  
pp. 418-421 ◽  
Author(s):  
Enzo Fontana ◽  
Nicolò Piluso ◽  
Alfio Russo ◽  
Simona Lorenti ◽  
Cinzia M. Marcellino ◽  
...  
Keyword(s):  
Ion Implantation ◽  
Point Defects ◽  
Electrical Characteristic ◽  
Source Region ◽  
Considerable Improvement ◽  
Large Reduction ◽  
Electrical Characteristics ◽  
Implantation Process ◽  
Ion Implanted

In this paper the influence of point defects generated by the ion implantation process in 4H-SiC DIMOSFET has been studied in detail. The point defects generated by the source or body implantation process have been detected by micro-photoluminescence and the effect of these defects on the electrical characteristics of the DIMOSFET has been studied. In particular it has been observed that a reduction of the source ion implanted dose produces a large reduction of point defects in the source region and a considerable improvement of the electrical characteristic of the DIMOSFET.

Defects Introduced by Low Dose Be-Implantation Probed by a Monoenergetic Positron Beam

1992 ◽  
Vol 262 ◽  
Author(s):  
A. Uedono ◽  
Y. Ujihira ◽  
L. Wei ◽  
Y. Tabuki ◽  
S. Tanigawa ◽  
...  
Keyword(s):  
Ion Implantation ◽  
Positron Annihilation ◽  
Low Dose ◽  
Positron Beam ◽  
Doppler Broadening ◽  
Positron Energy ◽  
P Type ◽  
Incident Positron ◽  
Depth Distributions

ABSTRACTVacancy-type defects in 60-keV Be+-implanted GaAs and InP were studied by a monoenergetic positron beam. The depth distributions of vacancy-type defects were obtained from measurements of Doppler broadening profiles of the positron annihilation as a function of incident positron energy. Vacancy-type defects introduced by ion implantation were observed in n-type GaAs. For p-type GaAs, however, this was not the case. This can be attributed to the recombination of vacancy-type defects and pre-existed interstitial-type defects in p-type GaAs. The defects induced by ion implantation in InP were also studied.

Point defects in As-grown and ion implanted GaAs probed by a monoenergetic positron beam

1994 ◽  
Author(s):  
A. Uedono ◽  
S. Fujii ◽  
L. Wei ◽  
S. Tanigawa
Keyword(s):  
Point Defects ◽  
Positron Beam ◽  
Ion Implanted

Ion Beam Modification of Silicone Rubber

1989 ◽  
Vol 153 ◽  
Author(s):  
Yoshiaki Suzuki ◽  
Masahiro Kusakabe ◽  
Masaya Iwaki ◽  
Masaaki Suzuki
Keyword(s):  
Raman Spectroscopy ◽  
Ion Implantation ◽  
Silicone Rubber ◽  
Ion Beam ◽  
Chemical Properties ◽  
Ion Beam Modification ◽  
Chemical States ◽  
Ft Ir ◽  
Ion Species ◽  
Ion Implanted

AbstractIon implantation in silicone rubber has been carried out in order to study its effects on structure and chemical states. H+-, He+-, C+-, N+-, N2+-, O+-, O2+-, Ne+-, Na+-, Ar+-, and K+- ion implantations were performed at an energy of 150 keV with doses ranging from 1×1013 to 1×1017 ions/cm2 at room temperature. The depth profiles of the ion implanted elements and host elements were investigated by means of XPS and SIMS. The chemical properties were studied by FT-IR-ATR and Raman spectroscopy. XPS results indicated that most of the implanted elements showed a Gaussian like distribution in the silicone polymer matrix, but implanted He+, Ne+, and Ar+ could not be detected. Results of FT-IR-ATR showed that ion implantation broke CH3 and Si-O bonds to form new radicals such as SiOH, >C=0, CH2 and SiHx and the effects varied depending on the implanted ion species. The Raman spectroscopy results showed that ion implanted silicone contained both sp3 and sp2 bonded carbon.

scholarly journals On the Limitations of Positron Annihilation Spectroscopy in the Investigation of Ion-Implanted FeCr Samples

Metals ◽  
2021 ◽  
Vol 11 (11) ◽  
pp. 1689
Author(s):  
Vladimir Slugen ◽  
Jarmila Degmova ◽  
Stanislav Sojak ◽  
Martin Petriska ◽  
Pavol Noga ◽  
...  
Keyword(s):  
Ion Implantation ◽  
Positron Annihilation ◽  
Neutron Irradiation ◽  
Surface Region ◽  
Positron Beam ◽  
Positron Annihilation Spectroscopy ◽  
Radiation Embrittlement ◽  
Nuclear Facilities ◽  
Near Surface ◽  
Slow Positron

New materials for advanced fission/fusion nuclear facilities must inevitably demonstrate resistance to radiation embrittlement. Thermal and radiation ageing accompanied by stress corrosion cracking are dominant effects that limit the operational condition and safe lifetime of the newest nuclear facilities. To study these phenomena and improve the current understanding of various aspects of radiation embrittlement, ion bombardment experiments are widely used as a surrogate for neutron irradiation. While avoiding the induced activity, typical for neutron-irradiated samples, is a clear benefit of the ion implantation, the shallow near-surface region of the modified materials may be a complication to the post-irradiation examination (PIE). However, microstructural defects induced by ion implantation can be effectively investigated using various spectroscopic techniques, including slow-positron beam spectroscopy. This method, typically represented by techniques of positron annihilation lifetime spectroscopy and Doppler broadening spectroscopy, enables a unique depth-profile characterisation of the near-surface region affected by ion bombardment or corrosion degradation. One of the best slow-positron beam facilities is available at the pulsed low-energy positron system (PLEPS), operated at FRM-II reactor in Munich (Germany). Bulk studies (such as high energy ion implantation or neutron irradiation experiments) can be, on the other hand, effectively performed using radioisotope positron sources. In this paper, we outline some basics of the two approaches and provide some recommendations to improve the validity of the positron annihilation spectroscopy (PAS) data obtained on ion-irradiated samples using a conventional 22Na positron source.

Ion Species Dependence of Electrical Characteristics in Ion Implanted GaAs

1992 ◽  
Vol 279 ◽  
Author(s):  
L. He ◽  
W. A. Anderson
Keyword(s):  
Ion Implantation ◽  
Deep Level ◽  
Electrical Characterization ◽  
Surface Damage ◽  
Electrical Performance ◽  
Current Voltage ◽  
Capacitance Voltage ◽  
Transient Spectroscopy ◽  
Ion Species ◽  
Ion Implanted

ABSTRACTFluorine, boron and oxygen implantation in GaAs has been investigated by electrical characterization using current-voltage (I-V), capacitance-voltage (C-V) and deep level transient spectroscopy (DLTS) techniques. Ion implantation at lOOkeV energy was conducted with doses of 1011 and 1012/cm2. Carrier compensation was observed in each implanted sample. The compensation effect strongly depended on ion implantation conditions and ion species. Severe surface damage was also induced which degrades electrical performance. Rapid thermal annealing (RTA) treatment showed the heavier ion implanted samples to be more thermally stable. Defect levels for each implanted species were compared and identified.

Electron Diffraction Analysis of Microtwin Structures in Regrown (III) Silicon

1982 ◽  
Vol 40 ◽  
pp. 460-461
Author(s):  
P. Ling ◽  
R. Gronsky ◽  
J. Washburn
Keyword(s):  
Electron Diffraction ◽  
Ion Implantation ◽  
Diffraction Analysis ◽  
Diffraction Pattern ◽  
Direct Consequence ◽  
The Other ◽  
Electron Diffraction Analysis ◽  
Defect Microstructures ◽  
Ion Implanted

The defect microstructures of Si arising from ion implantation and subsequent regrowth for a (111) substrate have been found to be dominated by microtwins. Figure 1(a) is a typical diffraction pattern of annealed ion-implanted (111) Si showing two groups of extra diffraction spots; one at positions (m, n integers), the other at adjacent positions between <000> and <220>. The object of the present paper is to show that these extra reflections are a direct consequence of the microtwins in the material.

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