Structure, Morphology and Kinetics of the C49 to C54 Phase Transformation In Tisi2 Thin Films

1997 ◽  
Vol 481 ◽  
Author(s):  
S Bocelli ◽  
F. Marabelli ◽  
M. Iannuzzi ◽  
L. Miglio ◽  
M. G. Grimaldi ◽  
...  
Keyword(s):  
Thin Films ◽  
Thermal Processing ◽  
Diffuse Reflectance ◽  
Structural Model ◽  
Crystalline Silicon ◽  
Film Structure ◽  
Silicon Substrates ◽  
Fine Grained ◽  
Structure Morphology ◽  
Kinetics Of

ABSTRACTA series of fine grained C49 thin films were prepared by depositing Ti films on heated amorphous as well as crystalline silicon substrates.Rapid thermal processing at temperatures between 700 and 775 °C was used to transform the metastable C49 phase into the stable C54. The evolution of the film structure and morphology during the transformation was investigated by sheet resistance, optical spectroscopy, diffuse reflectance and AFM measurements. One structural model which could account for our data is proposed according to crystallographic information present in the literature.

Kinetics of Pt Silicide Formation Studied by Spectral Ellipsometry

1997 ◽  
Vol 470 ◽  
Author(s):  
R. Schwarz ◽  
A. Dittrich ◽  
S. M. Zhou ◽  
M. Hundhausen ◽  
L. Ley ◽  
...  
Keyword(s):  
Activation Energy ◽  
Crystalline Silicon ◽  
Silicon Substrates ◽  
Silicide Formation ◽  
Spectral Ellipsometry ◽  
Step Process ◽  
Depth Profiles ◽  
Ellipsometric Angle ◽  
Kinetics Of

ABSTRACTSuicide formation during thermal annealing of thin Pt layers deposited by evaporation onto crystalline silicon substrates was studied by in-situ spectral ellipsometry. As was shown in an earlier study, Pt suicide is formed in a two-step process with intermediate stages of Pt2Si and PtSi at temperatures of about 190 and 240 °C, respectively. We observed a shift of about 15 °C of the di- and monosilicide formation, when the anneal rate was lowered from 3 to 1 K/min. The analysis of the reaction kinetics using the normalized ellipsometric angle δ yields a good fit to the data for different anneal rates with an activation energy of (1.6 ± 0.2) eV. The underlying model of suicide formation through a multilayer system was checked with depth profiles and compositional information obtained from Rutherford Backscattering.

Influence of Stoichiometric Variations and Rapid Thermal Processing of β-FESI2 thin Films on their Electrical and Microstructural Properties

1995 ◽  
Vol 402 ◽  
Author(s):  
M. Döscher ◽  
B. Selle ◽  
M. Pauli ◽  
F. Kothe ◽  
J. Szymanski ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Electron Beam ◽  
Thermal Processing ◽  
Rapid Thermal Processing ◽  
Rf Sputtering ◽  
Deposition Process ◽  
Silicon Substrates ◽  
Phonon Spectra ◽  
First Results

AbstractAmorphous irondisilicide thin films were deposited on silicon substrates in a RF sputtering process, followed by rapid thermal crystallization by means of moving the thin film beneath a line-shaped electron beam to form β-FeSi2. Depending on the deposition process parameters, films of a different stoichiometry can be produced. The deviations from the 1:2 stoichiometry, which have been determined by Rutherford Backscattering (RBS), are related to changes in the microstructure (studied by microscopic methods like TEM and AFM), the infrared phonon spectra (measured by FTIR spectroscopy) and the electrical properties of the crystallized films. The microstructure of the iron disilicide thin films is improved when the composition significantly deviates from 2.0, probably due to silicon interstitials in the silicide thin film. Films of different stoichiometry result in p- or n-type thin films with carrier densities below 5×1018cm−3 and hall mobilities up to 180cm 2/Vs. First results show that not only β-FeSi2-siliconheterojunctions as reported before but also pn-β-FeSi2-homojunctions show rectifying behavior. Rapid thermal processing with the line electron beam leads to a further improvement of the film quality when the scan velocity is increased up to the order of several cm/s.

Relating mechanical testing and microstructural features of polysilicon thin films

1999 ◽  
Vol 14 (3) ◽  
pp. 688-697 ◽  
Author(s):  
S. Jayaraman ◽  
R. L. Edwards ◽  
K. J. Hemker
Keyword(s):  
Thin Films ◽  
Elastic Constants ◽  
Crystalline Silicon ◽  
Silicon Substrates ◽  
X Ray Diffraction ◽  
Silicon Thin Films ◽  
Bulge Testing ◽  
Transmission Electron ◽  
Wide Range ◽  
Out Of Plane

Polycrystalline silicon thin films (polysilicon) have been deposited on single crystalline silicon substrates, and square and rectangular windows have been etched into these substrates using standard micromachining techniques. Pressure-displacement curves of the resulting polysilicon membranes have been obtained for these geometries, and this data has been used to determine the elastic constants E and v. The microstructural features of the films have been investigated by transmission electron microscopy (TEM) and x-ray diffraction. The grains were observed to be columnar and were found to have a 〈011〉 out-of-plane texture and a random in-plane grain orientation. A probabilistic model of the texture has been used to calculate the bounds of the elastic constants in the thin films. The results obtained from bulge testing (E = 162 ± 4 GPa and v = 0.20 ± 0.03) fall in the wide range of values previously reported for polysilicon and are in good agreement with the microsample tensile measurements conducted on films deposited in the same run as the present study (168 ± 2 GPa and 0.22 ± 0.01) and the calculated values of the in-plane moduli for 〈1103〉 textured films (E = 163.0–165.5 GPa and v = 0.221–0.239).

Electrical Properties of Silicon Nitride Thin Films Fabricated by ECR PECVD at Room Temperature

1992 ◽  
Vol 284 ◽  
Author(s):  
Yoo-Chan Jeon ◽  
Hoyoung Lee ◽  
Seung-Ki Joo
Keyword(s):  
Thin Films ◽  
Silicon Nitride ◽  
Electrical Properties ◽  
Room Temperature ◽  
Crystalline Silicon ◽  
Silicon Substrates ◽  
Trap States ◽  
Dominant Conduction Mechanism ◽  
Frenkel Emission ◽  
New Interpretation

ABSTRACTSilicon nitride thin films were deposited on single crystalline silicon substrates at room temperature by ECR PECVD with SiH4 and N2 as source gases and the electrical properties were analyzed. The dominant conduction mechanism in a high field was Poole-Frenkel emission. A ledge in I-V curve was observed in the first voltage ramp and it was found to originate from the field reduction at the injecting electrode due to the charge trapped in deep traps in the film. It also turned out that the ledge is a characteristic of monopolar conduction. A new interpretation of the current at low field — tunneling into trap states — was proposed and the current variations according to the field and temperature could be well explained.

Low-temperature ultraviolet sol-gel photoannealing processing of multifunctional lead-titanate-based thin films

2007 ◽  
Vol 22 (7) ◽  
pp. 1824-1833 ◽  
Author(s):  
M.L. Calzada ◽  
I. Bretos ◽  
R. Jiménez ◽  
H. Guillon ◽  
J. Ricote ◽  
...  
Keyword(s):  
Thin Films ◽  
Thermal Processing ◽  
Lead Titanate ◽  
Remanent Polarization ◽  
Sol Gel ◽  
Rapid Thermal Processing ◽  
Hysteresis Loops ◽  
Relaxor Ferroelectric ◽  
Silicon Substrates ◽  
Ferroelectric Hysteresis

(Pb1−xCax)TiO3 perovskite thin films with nominal compositions of (Pb0.76Ca.24)TiO3 (ferroelectric) and (Pb0.50Ca0.50)TiO3 (relaxor-ferroelectric) were prepared on silicon substrates at low temperatures compatible with those used in Si-technology. The technique used for the processing of these films was ultraviolet (UV) sol-gel photoannealing, using photo-sensitive precursor solutions and UV-assisted rapid thermal processing. The UV-irradiation and thermal treatment of the solution-derived films (gel films) were carried out in air or in oxygen. In both cases, the formation of the perovskite occurred at the same temperature, and this temperature increased as the Ca2+ content increased. Thus, full-perovskite films of (Pb0.76Ca.24)TiO3 were obtained at 723 K whereas those of (Pb0.50Ca0.50)TiO3 were formed at 773 K. Well-defined ferroelectric hysteresis loops were measured in the (Pb0.76Ca.24)TiO3 films, with values of remanent polarization of Pr ∼ 11 μC cm−2 and coercive fields for the films processed in oxygen lower than those of the films processed in air, Ec ∼ 164 and ∼226 kV.cm−1, respectively. These films showed a ferro-paraelectric transition at close temperatures of Tmax ∼ 605 K, although with higher values of the permittivity for the film processed in oxygen, k ∼ 567 at 10 kHz. The (Pb0.50Ca.50)TiO3 films had a diffuse ferro-paraelectric transition with a relaxor-like character, also with higher k values for the films prepared in oxygen, k ∼ 179 at Tmax ∼ 20 K. The possible use of these materials in silicon integrated multifunctional devices is discussed in this paper.

Pre-conditioning and dual constant composition dissolution kinetics of pulsed laser deposited hydroxyapatite thin films on silicon substrates

Biomaterials ◽  
1996 ◽  
Vol 17 (6) ◽  
pp. 631-637 ◽  
Author(s):  
B.E. Tucker ◽  
C.M. Cottell ◽  
R.C.Y. Auyeungt ◽  
M. Spector ◽  
G.H. Nancollas
Keyword(s):  
Thin Films ◽  
Pulsed Laser ◽  
Dissolution Kinetics ◽  
Silicon Substrates ◽  
Constant Composition ◽  
Kinetics Of

Crystalline silicon thin films: A promising approach for photovoltaics?

1998 ◽  
Vol 13 (10) ◽  
pp. 2763-2774 ◽  
Author(s):  
A. Slaoui ◽  
R. Monna ◽  
J. Poortmans ◽  
T. Vermeulen ◽  
O. Evrard ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Surface Passivation ◽  
Crystalline Silicon ◽  
Silicon Substrates ◽  
Photovoltaic Devices ◽  
Silicon Thin Films ◽  
Liquid Phases ◽  
Starting Point ◽  
Bulk Passivation

In this paper we review the achievements in the field of silicon crystalline thin film solar cells and correlate these with the different types of growth techniques and substrates. As a starting point we discuss the characteristics of photovoltaic devices based on the use of highly doped monocrystalline substrates as mechanical carriers for the thin films. These films are epitaxially deposited from the gas (CVD) or liquid phase (LPE). The comparison of both techniques is extended to growth on defective silicon substrates, i.e., multicrystalline wafers or silicon ribbons. The intrinsic grain boundary recombination activity in the thin films is assessed as a function of the deposition technique. Bulk passivation by hydrogenation considerably improves the recombination properties. The optimization of the hydrogen passivation conditions is looked at in conjunction with the used surface passivation process. This review is completed with the approaches to realize thin film cells on nonsilicon substrates, including recrystallization in solid and liquid phases.

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