Light-Controlled Switching Transients in Mis Silicon Structures with Multichannel Insulator: Physical Processes and New Device Modelling

1997 ◽  
Vol 490 ◽  
Author(s):  
A. Malik ◽  
R. Martins
Keyword(s):  
Low Voltage ◽  
Spray Pyrolysis Technique ◽  
Electrical Contact ◽  
Optoelectronic Device ◽  
Operating Characteristics ◽  
Insulator Layer ◽  
Optical Signals ◽  
New Device ◽  
Controlled Switching ◽  
Wide Range

ABSTRACTWe present the modelling of a new two-terminal and low-voltage operating optoelectronic device based on MIS silicon structure with multichannel insulator and having as gate a transparent metallic tin-doped indium oxide (ITO) layer deposited by spray pyrolysis technique over the insulator layer. ITO layer has a multiple non-rectifier electrical contact with silicon substrate, in the SiO2 channel's region. Construction details of the process, together with its operating characteristics are given. The devices developed do not require external active electronic components (transistors, microschemes) to execute their functions and to transform analogue input optical signals to digital output form, highly important for a wide range of optoelectronic applications.

IMPROVED TWO-TERMINAL SILICON FUNCTIONAL OPTICAL SENSOR

2001 ◽  
Vol 15 (17n19) ◽  
pp. 722-725 ◽  
Author(s):  
A. MALIK ◽  
M. ACEVES
Keyword(s):  
Optical Sensor ◽  
Low Voltage ◽  
Electronic Components ◽  
Digital Output ◽  
Optical Signals ◽  
Voltage Bias ◽  
Wide Range ◽  
Optoelectronic Applications ◽  
Silicon Based

The modelling of two-terminal silicon-based multi-layered functional photosensor that operates at low-voltage bias is presented. The devices developed do not require external active electronic components (transistors, microminiature circuits, etc) to execute their functions. Neither to transform analogue input optical signals to digital output form that is very important for a wide range of optoelectronic applications.

Development of a conical anode Fe-gun for low voltage SEM

1988 ◽  
Vol 46 ◽  
pp. 978-979
Author(s):  
T. Miyokawa ◽  
S. Norioka ◽  
S. Goto
Keyword(s):  
High Resolution ◽  
Field Emission ◽  
Low Voltage ◽  
Irradiation Damage ◽  
Cold Cathode ◽  
Virtual Source ◽  
Source Position ◽  
Electrostatic Lens ◽  
Electrostatic Lenses ◽  
Wide Range

Field emission SEMs (FE-SEMs) are becoming popular due to their high resolution needs. In the field of semiconductor product, it is demanded to use the low accelerating voltage FE-SEM to avoid the electron irradiation damage and the electron charging up on samples. However the accelerating voltage of usual SEM with FE-gun is limited until 1 kV, which is not enough small for the present demands, because the virtual source goes far from the tip in lower accelerating voltages. This virtual source position depends on the shape of the electrostatic lens. So, we investigated several types of electrostatic lenses to be applicable to the lower accelerating voltage. In the result, it is found a field emission gun with a conical anode is effectively applied for a wide range of low accelerating voltages.A field emission gun usually consists of a field emission tip (cold cathode) and the Butler type electrostatic lens.

Epitaxial ferroelectric thin films

1994 ◽  
Vol 52 ◽  
pp. 572-573
Author(s):  
S. G. Ghonge ◽  
E. Goo ◽  
R. Ramesh ◽  
R. Haakenaasen ◽  
D. K. Fork
Keyword(s):  
Single Crystal ◽  
Work Function ◽  
Nonvolatile Memory ◽  
Ferroelectric Properties ◽  
Electrical Contact ◽  
Memory Devices ◽  
Ferroelectric Films ◽  
Si Substrates ◽  
Electro Optic ◽  
Wide Range

Microstructure of epitaxial ferroelectric/conductive oxide heterostructures on LaAIO3(LAO) and Si substrates have been studied by conventional and high resolution transmission electron microscopy. The epitaxial films have a wide range of potential applications in areas such as non-volatile memory devices, electro-optic devices and pyroelectric detectors. For applications such as electro-optic devices the films must be single crystal and for applications such as nonvolatile memory devices and pyroelectric devices single crystal films will enhance the performance of the devices. The ferroelectric films studied are Pb(Zr0.2Ti0.8)O3(PLZT), PbTiO3(PT), BiTiO3(BT) and Pb0.9La0.1(Zr0.2Ti0.8)0.975O3(PLZT).Electrical contact to ferroelectric films is commonly made with metals such as Pt. Metals generally have a large difference in work function compared to the work function of the ferroelectric oxides. This results in a Schottky barrier at the interface and the interfacial space charge is believed to responsible for domain pinning and degradation in the ferroelectric properties resulting in phenomenon such as fatigue.

scholarly journals The simulation model for a flood management by flood control facilities

2018 ◽  
Vol 245 ◽  
pp. 15002 ◽  
Author(s):  
Roman Davydov ◽  
Valery Antonov ◽  
Dmitry Molodtsov ◽  
Alexey Cheremisin ◽  
Vadim Korablev
Keyword(s):  
Mathematical Models ◽  
Flood Control ◽  
Flood Management ◽  
Hydroelectric Power Station ◽  
Hydroelectric Power ◽  
Operating Characteristics ◽  
Hydro Power ◽  
Operation Modes ◽  
Wide Range ◽  
Environmental Requirements

The rapid spread of storm floods over large areas requires flood management throughout the river basin by the creation an innovative system of flood control facilities of various functional purposes distributed in the area. The central part of the system is the hydro system with hydro power plant. In addition, the flood control facilities on the side tributaries with self-regulating reservoir are included in the system. To assess the effect of controlling extreme water discharges by flood control facilities, it is necessary to develop special mathematical models reflecting the specifics of their operation. Unified mathematical models of the operation modes of a hydro complex with hydroelectric power station and flood control facility are created. They are implemented in a computer program that provides the ability to determine the main parameters and operating characteristics of hydro systems when performing multivariate calculations in a wide range of initial data. This makes possible specifying the parameters and operation modes of each hydro system with the current economic and environmental requirements, to assess the energy-economic and environmental consequences in the operation of the system of flood control facilities distributed in the area. The article analyses the results of the extreme water discharge’s regulation by the hydro system on the main river and flood control facilities on the side tributaries, considering environmental requirements.

scholarly journals MXenes for future nanophotonic device applications

Nanophotonics ◽  
2020 ◽  
Vol 9 (7) ◽  
pp. 1831-1853
Author(s):  
Jaeho Jeon ◽  
Yajie Yang ◽  
Haeju Choi ◽  
Jin-Hong Park ◽  
Byoung Hun Lee ◽  
...  
Keyword(s):  
Solar Cells ◽  
Transition Metal ◽  
Wide Spectrum ◽  
Building Blocks ◽  
Optoelectronic Device ◽  
High Yield ◽  
Saturable Absorption ◽  
Nanophotonic Device ◽  
Wide Range ◽  
Device Applications

AbstractTwo-dimensional (2D) layers of transition metal carbides, nitrides, or carbonitrides, collectively referred to as MXenes, are considered as the new family of 2D materials for the development of functional building blocks for optoelectronic and photonic device applications. Their advantages are based on their unique and tunable electronic and optical properties, which depend on the modulation of transition metal elements or surface functional groups. In this paper, we have presented a comprehensive review of MXenes to suggest an insightful perspective on future nanophotonic and optoelectronic device applications based on advanced synthesis processes and theoretically predicted or experimentally verified material properties. Recently developed optoelectronic and photonic devices, such as photodetectors, solar cells, fiber lasers, and light-emitting diodes are summarized in this review. Wide-spectrum photodetection with high photoresponsivity, high-yield solar cells, and effective saturable absorption were achieved by exploiting different MXenes. Further, the great potential of MXenes as an electrode material is predicted with a controllable work function in a wide range (1.6–8 eV) and high conductivity (~104 S/cm), and their potential as active channel material by generating a tunable energy bandgap is likewise shown. MXene can provide new functional building blocks for future generation nanophotonic device applications.

LOW-NOISE SILICON-ON-INSULATOR HALL DEVICES

2004 ◽  
Vol 04 (02) ◽  
pp. L345-L354 ◽  
Author(s):  
Y. HADDAB ◽  
V. MOSSER ◽  
M. LYSOWEC ◽  
J. SUSKI ◽  
L. DEMEUS ◽  
...  
Keyword(s):  
Noise Level ◽  
Low Voltage ◽  
Silicon Layer ◽  
Electrical Current ◽  
Low Noise ◽  
Silicon On Insulator ◽  
Technological Parameters ◽  
Wide Range ◽  
Hall Sensors ◽  
Soi Technology

Hall sensors are used in a very wide range of applications. A very demanding one is electrical current measurement for metering purposes. In addition to high precision and stability, a sufficiently low noise level is required. Cost reduction through sensor integration with low-voltage/low-power electronics is also desirable. The purpose of this work is to investigate the possible use of SOI (Silicon On Insulator) technology for this integration. We have fabricated SOI Hall devices exploring the useful range of silicon layer thickness and doping level. We show that noise is influenced by the presence of LOCOS and p-n depletion zones near the edges of the active zones of the devices. A proper choice of SOI technological parameters and process flow leads to up to 18 dB reduction in Hall sensor noise level. This result can be extended to many categories of devices fabricated using SOI technology.

scholarly journals Voltage-gated transient currents in bovine adrenal fasciculata cells. I. T-type Ca2+ current.

1993 ◽  
Vol 102 (2) ◽  
pp. 217-237 ◽  
Author(s):  
B Mlinar ◽  
B A Biagi ◽  
J J Enyeart
Keyword(s):  
Time Constant ◽  
Low Voltage ◽  
Zona Fasciculata ◽  
Patch Clamp Technique ◽  
Time Constants ◽  
Voltage Gated ◽  
Wide Range ◽  
Boltzmann Function ◽  
Voltage Dependent ◽  
Ca2 Channels

The whole cell version of the patch clamp technique was used to identify and characterize voltage-gated Ca2+ channels in enzymatically dissociated bovine adrenal zona fasciculata (AZF) cells. The great majority of cells (84 of 86) expressed only low voltage-activated, rapidly inactivating Ca2+ current with properties of T-type Ca2+ current described in other cells. Voltage-dependent activation of this current was fit by a Boltzmann function raised to an integer power of 4 with a midpoint at -17 mV. Independent estimates of the single channel gating charge obtained from the activation curve and using the "limiting logarithmic potential sensitivity" were 8.1 and 6.8 elementary charges, respectively. Inactivation was a steep function of voltage with a v1/2 of -49.9 mV and a slope factor K of 3.73 mV. The expression of a single Ca2+ channel subtype by AZF cells allowed the voltage-dependent gating and kinetic properties of T current to be studied over a wide range of potentials. Analysis of the gating kinetics of this Ca2+ current indicate that T channel activation, inactivation, deactivation (closing), and reactivation (recovery from inactivation) each include voltage-independent transitions that become rate limiting at extreme voltages. Ca2+ current activated with voltage-dependent sigmoidal kinetics that were described by an m4 model. The activation time constant varied exponentially at test potentials between -30 and +10 mV, approaching a voltage-independent minimum of 1.6 ms. The inactivation time constant (tau i) also decreased exponentially to a minimum of 18.3 ms at potentials positive to 0 mV. T channel closing (deactivation) was faster at more negative voltages; the deactivation time constant (tau d) decreased from 8.14 +/- 0.7 to 0.48 +/- 0.1 ms at potentials between -40 and -150 mV. T channels inactivated by depolarization returned to the closed state along pathways that included two voltage-dependent time constants. tau rec-s ranged from 8.11 to 4.80 s when the recovery potential was varied from -50 to -90 mV, while tau rec-f decreased from 1.01 to 0.372 s. At potentials negative to -70 mV, both time constants approached minimum values. The low voltage-activated Ca2+ current in AZF cells was blocked by the T channel selective antagonist Ni2+ with an IC50 of 20 microM. At similar concentrations, Ni2+ also blocked cortisol secretion stimulated by adrenocorticotropic hormone. Our results indicate that bovine AZF cells are distinctive among secretory cells in expressing primarily or exclusively T-type Ca2+ channels.(ABSTRACT TRUNCATED AT 400 WORDS)

Conducting Properties of a Contact Between Open-End Carbon Nanotube and Various Electrodes

2009 ◽  
Author(s):  
Feng Gao ◽  
Jianmin Qu ◽  
Matthew Yao
Keyword(s):  
Electronic Structure ◽  
Carbon Nanotube ◽  
Density Functional ◽  
Low Voltage ◽  
Local Density ◽  
Electrical Contact ◽  
Metal Electrode ◽  
Electrode System ◽  
Voltage Bias ◽  
Electronic Conductance

The carbon nanotube (CNT) is becoming a promising candidate as electrical interconnects in nanoscale electronics. This paper reports the electronic structure and the electrical conducting properties at the interface between an open-end single wall CNT (SWCNT) and various metal electrodes, such as Al, Au, Cu, and Pd. A simulation cell consisting of an SWCNT with each end connected to the metal electrode was constructed. A voltage bias is prescribed between the left- and right-electrodes to compute the electronic conductance. Due to the electronic structure, the electron density and local density of states (LDOS) are calculated to reveal the interaction behavior at the interfaces. The first-principle quantum mechanical density functional and non-equilibrium Green’s function (NEGF) approaches are adopted to compute the transport coefficient. After that, the voltage-current relation is calculated using the Landauer-Buttiker formalism. The results show that electrons are conducted through the electrode/CNT/electrode two-probe system. The contact electronic resistance is calculated by averaging the values in the low voltage bias regime (0.0–0.1 V), in which the voltage–current relationship is found to be linear. And the electrical contact conductance of electrode/CNT/electrode system show the electrode-type dependent, however, the amplitude for different electrodes is of the same order.

Sign in / Sign up

Export Citation Format

Share Document