Chemical and Ion Beam Etch Studies of Polycrystalline Silicon

1981 ◽  
Vol 5 ◽  
Author(s):  
P. A. Lester ◽  
R. Singh ◽  
D.A. Rice ◽  
R. N. Pangborn ◽  
S. Ashok ◽  
...  
Keyword(s):  
Polycrystalline Silicon ◽  
Lattice Strain ◽  
Ion Beam ◽  
Ion Source ◽  
Double Crystal ◽  
Ion Beam Etching ◽  
Solar Cell Performance ◽  
X Ray ◽  
Wet Chemical ◽  
Wet Chemical Etching

ABSTRACTMS and MIS solar cell performance as a function of wet chemical etching history has been studied and correlated with lattice strain obtained from x-ray double-crystal diffraction technique and intragranular surface topography. Dry ion beam etching from a Kaufman ion source is found to damage the surface and radically alter the electrical barrier by introducing donor-like states in the damaged region.

Ion Beam Etching System for Mercury Cadmium Telluride and III-V Compound Semiconductors

1991 ◽  
Vol 236 ◽  
Author(s):  
Geoffrey K. Reeves ◽  
Patrick. W. Leech ◽  
Patrick Bond
Keyword(s):  
Cadmium Telluride ◽  
Mercury Cadmium Telluride ◽  
Ion Beam ◽  
Compound Semiconductors ◽  
Ion Source ◽  
Rotating Platform ◽  
Ion Beam Etching ◽  
Wide Range ◽  
Wet Chemical ◽  
Etching System

AbstractThis paper describes a laboratory built ion beam etching system and its performance when used for etching Hg1-xCdxTe, GaAs and InP. The etching system provides a means for forming device mesas on a wide range of semiconductors without having to resort to wet chemical etches. The system uses a Kaufmann ion source, a rotating platform and two flow controllers to allow the variation of gas ratios and flows.

Recent Advances in Broad Ion Beam Based Techniques/Instrumentation for SEM Specimen Preparation of Semiconductors

1999 ◽  
Author(s):  
R. Alani ◽  
R. J. Mitro ◽  
W. Hauffe
Keyword(s):  
Cross Sections ◽  
Chemical Etching ◽  
Focused Ion Beam ◽  
Ion Beam ◽  
Semiconductor Industry ◽  
Inert Gas ◽  
Specimen Preparation ◽  
Ion Beam Etching ◽  
Wet Chemical ◽  
Wet Chemical Etching

Abstract The semiconductor industry routinely prepares crosssectional SEM specimens using several traditional techniques. Included in these are cleaving, mechanical polishing, wet chemical etching and focused ion beam (FIB) milling. This presentation deals with a new alternate method for preparation of SEM semiconductor specimens based upon a dedicated broad ion beam instrument. Offered initially as an alternative to wet chemical etching, the instrument was designed to etch and coat SEM and metallographic specimens in one vacuum chamber using inert gas (Ar) ion beams. The system has recently undergone further enhancement by introducing iodine Reactive Ion Beam Etching (RIBE) producing much improved etching/cleaning capabilities compared with inert gas ion beam etching. Further results indicate Ar broad ion beam etching can offer a rapid, simple, more affordable alternative (to FIB machines) for precision cross sections and for “slope cutting,” a technique producing large cross-sections within a short time frame. The overall effectiveness of this system for iodine RIBE etching, for precision cross sectioning and “slope cutting” will be shown for a number of traditional and advanced semiconductor devices.

A new approach for Cross-Sectioning Sem Specimens of Semiconductors by Broad-Ion Beam Milling

1998 ◽  
Vol 4 (S2) ◽  
pp. 864-865
Author(s):  
K. Ogura ◽  
R. Alani
Keyword(s):  
Cross Sections ◽  
Chemical Etching ◽  
Vacuum Chamber ◽  
Ion Beam ◽  
Mechanical Grinding ◽  
Ion Beam Etching ◽  
Reliable Technique ◽  
New Approach ◽  
Wet Chemical ◽  
Wet Chemical Etching

The cross-sectioning of semiconductor wafers for SEM studies has traditionally been carried out by tedious and laborious mechanical grinding and polishing techniques. The mechanically polished surfaces are treated using a “wet chemical” etching method to enhance and delineate certain features or layers in a given specimen. The etched specimens are then coated by conductive layers to prevent charging during SEM examination. As an alternative to “wet chemical etching”, broad-ion beam etching techniques have been developed for surface treatment of mechanically polished specimens. More specifically, we have reported [1] the utilization of a combined process of broad-ion beam etching and coating of mechanically cross sectioned semiconductors in a single vacuum chamber. As a further progress to that work, we report a rapid and reliable technique for preparing precision SEM cross sections. The technique is based on perpendicular broad-ion beam milling of cleaved wafers to expose any desired cross-section through a given feature of the specimen.

scholarly journals Lattice strain distribution resolved by X-ray Bragg-surface diffraction in an Si matrix distorted by embedded FeSi2nanoparticles

2013 ◽  
Vol 46 (6) ◽  
pp. 1796-1804 ◽  
Author(s):  
Rossano Lang ◽  
Alan S. de Menezes ◽  
Adenilson O. dos Santos ◽  
Shay Reboh ◽  
Eliermes A. Meneses ◽  
...  
Keyword(s):  
Strain Distribution ◽  
Beam Energy ◽  
Lattice Strain ◽  
Ion Beam ◽  
Silicon Layer ◽  
Semiconductor Substrate ◽  
X Ray ◽  
Out Of Plane ◽  
Diffraction Peaks ◽  
Surface Diffraction

Out-of-plane and primarily in-plane lattice strain distributions, along the two perpendicular crystallographic directions on the subsurface of a silicon layer with embedded FeSi2nanoparticles, were analyzed and resolved as a function of the synchrotron X-ray beam energy by using ω:φ mappings of the ({\overline 1}11) and (111) Bragg-surface diffraction peaks. The nanoparticles, synthesized by ion-beam-induced epitaxial crystallization of Fe+-implanted Si(001), were observed to have different orientations and morphologies (sphere- and plate-like nanoparticles) within the implanted/recrystallized region. The results show that the shape of the synthesized material singularly affects the surrounding Si lattice. The lattice strain distribution elucidated by the nonconventional X-ray Bragg-surface diffraction technique clearly exhibits an anisotropic effect, predominantly caused by plate-shaped nanoparticles. This type of refined detection reflects a key application of the method, which could be used to allow discrimination of strains in distorted semiconductor substrate layers.

Surface Morphological Changes of Polyimide with Oxygen Reactive Ion Beam Etching (RIBE)

1988 ◽  
Vol 129 ◽  
Author(s):  
Kyung W. Paik ◽  
Arthur L. Ruoff
Keyword(s):  
Morphological Changes ◽  
Ion Beam ◽  
X Ray Diffraction ◽  
Cross Sectional ◽  
Ion Beam Etching ◽  
X Ray ◽  
Disordered Phase ◽  
Beam Incidence ◽  
Yield Difference ◽  
Sectional Plane

ABSTRACTAt the beginning of etching, surface asperities appeared on the top plane of the polyimide (PI) film. The formation of surface asperities is due to the ordered phase in PI film. The known dimension of the ordered phase measured by X-ray diffraction is consistant with the size of surface asperities, 100 Å, observed by TEM. Further ion doses made these asperties evolve into smooth bumps which then eroded into cones as a result of etch yield difference as a function of the angle of beam incidence Y(θ)/Y(0) which has a maximum at θ=70. Finally cones led to the development of grass-likestructure on the top plane of the PI film. The formation of platelike structure on the cross-sectional plane of PI indicates that the structural inhomogeniety of the PI film(the ordered and disordered phase) is the main cause for the surface morphological changes of PI.

A Blazed Si Grating for Soft X-Ray Fabricated by Two-Stage Reactive Ion-Beam Etching

1983 ◽  
Vol 22 (Part 2, No. 4) ◽  
pp. L219-L220 ◽  
Author(s):  
Hiroaki Aritome ◽  
Toshiya Yamato ◽  
Shinji Matsui ◽  
Susumu Namba
Keyword(s):  
Ion Beam ◽  
Two Stage ◽  
Ion Beam Etching ◽  
X Ray ◽  
Reactive Ion Beam Etching

Reactive Ion Beam Etching Using a Broad Beam ECR Ion Source

1982 ◽  
Vol 21 (Part 2, No. 1) ◽  
pp. L4-L6 ◽  
Author(s):  
Seitaro Matsuo ◽  
Yoshio Adachi
Keyword(s):  
Ion Beam ◽  
Ion Source ◽  
Ecr Ion Source ◽  
Ion Beam Etching ◽  
Broad Beam ◽  
Reactive Ion Beam Etching

Utilization of wet chemical etching for revealing defects in GaAs X-ray detector arrays

Vacuum ◽  
2005 ◽  
Vol 80 (1-3) ◽  
pp. 218-222 ◽  
Author(s):  
J. Škriniarová ◽  
A. Perd’ochová ◽  
M. Hrúzik ◽  
M. Veselý ◽  
B. Bendjus ◽  
...  
Keyword(s):  
Chemical Etching ◽  
Detector Arrays ◽  
X Ray ◽  
Wet Chemical ◽  
Wet Chemical Etching

Possibility for the form correction of X-ray mirrors by reactive ion-beam etching

2012 ◽  
Vol 6 (3) ◽  
pp. 487-489 ◽  
Author(s):  
A. A. Akhsakhalyan ◽  
A. D. Akhsakhalyan ◽  
Yu. A. Vainer ◽  
D. G. Volgunov ◽  
M. V. Zorina ◽  
...  
Keyword(s):  
Ion Beam ◽  
Ion Beam Etching ◽  
X Ray ◽  
Reactive Ion Beam Etching

Chemically assisted focused-ion-beam etching for tungsten x-ray mask repair

1993 ◽  
Author(s):  
Lloyd R. Harriott ◽  
R. R. Kola ◽  
George K. Celler
Keyword(s):  
Focused Ion Beam ◽  
Ion Beam ◽  
Ion Beam Etching ◽  
X Ray
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