Characterization of Tetrahedrally Bonded Amorphous Carbon Via Capacitance Techniques
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AbstractWe report the results of junction capacitance measurements on thin tetrahedral amorphous carbon (ta-C) films to deduce their defect densities. We find defect densities in the range 3 - 7 × 1017 cm−3 in the undoped ta-C films, and roughly an order of magnitude larger in the nitrogen doped (n-type) films. In some cases fairly uniform defect profiles were obtained covering a thickness of a couple of hundreds angstroems. We also observed a thermal activation process of carriers from defect states at the ta-C/c-Si interface with an activation energy in the range of 0.4eV to 0.5eV.
2008 ◽
Vol 23
(1)
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pp. 180-184
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2021 ◽
Vol 1016
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pp. 1710-1714
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2008 ◽
Vol 43
(2)
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pp. 453-462
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2011 ◽
Vol 18
(3)
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pp. 032005