Interface characterization of B4C-based multilayers by X-ray grazing-incidence reflectivity and diffuse scattering

2013 ◽  
Vol 20 (3) ◽  
pp. 449-454 ◽  
Author(s):  
Hui Jiang ◽  
Zhanshan Wang ◽  
Jingtao Zhu
Keyword(s):  
Diffuse Scattering ◽  
Aging Process ◽  
Grazing Incidence ◽  
X Rays ◽  
X Ray ◽  
Interface Characterization ◽  
Quantitative Results ◽  
Fabrication And Characterization ◽  
Stable Structures

B4C-based multilayers have important applications for soft to hard X-rays. In this paper, X-ray grazing-incidence reflectivity and diffuse scattering, combining various analysis methods, were used to characterize the structure of B4C-based multilayers including layer thickness, density, interfacial roughness, interdiffusion, correlation length,etc.Quantitative results for W/B4C, Mo/B4C and La/B4C multilayers were compared. W/B4C multilayers show the sharpest interfaces and most stable structures. The roughness replications of La/B4C and Mo/B4C multilayers are not strong, and oxidations and structure expansions are found in the aging process. This work provides guidance for future fabrication and characterization of B4C-based multilayers.

The influence of X-ray coherence length on TXRF and XSW and the characterization of nanoparticles observed under grazing incidence of X-rays

2009 ◽  
Vol 24 (6) ◽  
pp. 792 ◽  
Author(s):  
Alex von Bohlen ◽  
Markus Krämer ◽  
Christian Sternemann ◽  
Michael Paulus
Keyword(s):  
Coherence Length ◽  
Grazing Incidence ◽  
X Rays ◽  
X Ray

X-RAY DIFFRACTION FOR SURFACES AND BURIED INTERFACES

2000 ◽  
Vol 07 (04) ◽  
pp. 437-446 ◽  
Author(s):  
G. RENAUD
Keyword(s):  
Grazing Incidence ◽  
X Rays ◽  
X Ray Diffraction ◽  
X Ray ◽  
Grain Sizes ◽  
Buried Interfaces ◽  
Surfaces And Interfaces ◽  
Coherent Interfaces

The application of X-rays to the structural characterization of surfaces and interfaces, in situ and in UHV, is discussed on selected examples. Grazing incidence X-ray diffraction is not only a very powerful technique for quantitatively investigating the atomic structure of surfaces and interfaces, but is also very useful for providing information on the interfacial registry for coherent interfaces or on the strain deformation, island and grain sizes for incoherent epilayers.

X-Ray Diffuse Scattering Investigation of Defects in Ion Implanted and Annealed Silicon

1998 ◽  
Vol 524 ◽  
Author(s):  
C. H. Chang ◽  
U. Beck ◽  
T. H. Metzger ◽  
J. R. Patel
Keyword(s):  
Ion Implantation ◽  
Point Defect ◽  
Point Defects ◽  
Diffuse Scattering ◽  
Grazing Incidence ◽  
X Rays ◽  
Scattered Intensity ◽  
X Ray ◽  
Defect Clusters ◽  
Point Defect Clusters

ABSTRACTTo characterize the point defects and point defect clusters introduced by ion implantation and annealing, we have used grazing incidence x-rays to measure the diffuse scattering in the tails of Bragg peaks (Huang Scattering). An analysis of the diffuse scattered intensity will allow us to characterize the nature of point defects or defect clusters introduced by ion implantation. We have also observed unexpected satellite peaks in the diffuse scattered tails. Possible causes for the occurrence of the peaks will be discussed.

The Characterization of Thin Films and Layered Structures Using X-RAY Absorption and Reflection at Grazing Incidence

1984 ◽  
Vol 37 ◽  
Author(s):  
S. M. Heald ◽  
J. M. Tranquada ◽  
D. O. Welch ◽  
H. Chen
Keyword(s):  
Thin Films ◽  
Fine Structure ◽  
High Resolution ◽  
Grazing Incidence ◽  
X Rays ◽  
X Ray ◽  
Surface And Interface ◽  
Interface Structures ◽  
X Ray Absorption

AbstractX-rays at grazing incidence have a short, controllable penetration depth and are well suited as a probe of surface and interface structures. This paper examines the possibility applying grazing-incidence reflectivity and Extended X-Ray Absorption Fine Structure (EXAFS) measurements to such systems. Results are presented for an Al-Cu couple for which both high resolution reflectivity and interface EXAFS measurements are made. The latter results are the first interface specific EXAFS data to be reported. Distinct changes in both signals are observed upon annealing, demonstrating the potential of the techniques.

Depth-Resolved Characterization of Perylenediimide Side-Chain Polymer Thin Film Structure Using Grazing-Incidence Wide-Angle X-ray Diffraction with Tender X-rays

Langmuir ◽  
2018 ◽  
Vol 34 (29) ◽  
pp. 8516-8521 ◽  
Author(s):  
Kazutaka Kamitani ◽  
Ayumi Hamada ◽  
Kazutoshi Yokomachi ◽  
Kakeru Ninomiya ◽  
Kiyu Uno ◽  
...  
Keyword(s):  
Grazing Incidence ◽  
Film Structure ◽  
Side Chain ◽  
Wide Angle ◽  
X Rays ◽  
X Ray Diffraction ◽  
Polymer Thin Film ◽  
Chain Polymer ◽  
X Ray

scholarly journals Interface Evolution in a W/Si Multilayer after Rapid Thermal Annealing Studied by X-ray Reflectivity and Diffuse Scattering

1997 ◽  
Vol 30 (5) ◽  
pp. 642-646 ◽  
Author(s):  
M. Jergel ◽  
V. Holý ◽  
E. Majková ◽  
S. Luby ◽  
R. Senderák
Keyword(s):  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Diffuse Scattering ◽  
Grazing Incidence ◽  
Interface Roughness ◽  
X Rays ◽  
Interface Evolution ◽  
X Ray ◽  
Scattering Measurements ◽  
Highly Correlated

An interface study of the effect of rapid thermal annealing (RTA) in the temperature range 523–1273 K for 5–40 s on a nominally [(50 Å Si/10 Å W) × 9] amorphous multilayer (ML) deposited on an Si(100) wafer was performed by X-ray reflectivity and diffuse-scattering measurements at grazing incidence. The results of the X-ray reflectivity and diffuse-scattering measurements were evaluated by Fresnel optical computational code and within the distorted-wave Born approximation, respectively. Up to the 773 K/5 s annealing step, the r.m.s. interface roughness decreases by 30%, which brings about a reflectivity increase of 20% on the first Bragg maximum. There is a small overall increase of the r.m.s. interface roughness across the ML in the as-deposited state and the interface profiles are highly correlated. From the very beginning of RTA, the fractal interface behaviour is gradually lost and the lateral correlation length increases, this process being accompanied by a decrease of the interface conformality. This tendency continues during the 773 K/20 s annealing; however, the r.m.s. roughness evolution is reversed. During the 1023 K/5 s annealing, the interfaces are no longer `seen' by the X-rays and, during the 1273 K/5 s annealing, a total collapse of the ML structure takes place.

Structural Characterization of GaN Epilayers Grown on Patterned Sapphire Substrates

2005 ◽  
Vol 864 ◽  
Author(s):  
Chang-Soo Kim ◽  
Ji-Hyun Moon ◽  
Sang-Jun Lee ◽  
Sam-Kyu Noh ◽  
Je Won Kim ◽  
...  
Keyword(s):  
Incidence Angle ◽  
Surface Region ◽  
Grazing Incidence ◽  
X Rays ◽  
X Ray Diffraction ◽  
X Ray ◽  
Patterned Substrate ◽  
Sapphire Substrates ◽  
Patterned Sapphire Substrates

AbstractThe structural properties of GaN epitaxial layers grown on patterned sapphire substrates by MOCVD have been investigated using HRXRD(high-resolution X-ray diffraction), GIXRD(grazing incidence X-ray diffraction) and PL(photoluminescence). For X-ray characterizations rocking curves for GaN (10·5), (00·2), (11·4) and (11·0) reflections for which incidence angles of X-rays are 32.0°, 17.3°, 11.0° and 0.34°, respectively, were measured. For (10·5), (00·2) and (11·4) reflections FWHMs of the rocking curves for a patterned substrate were broader than those for a unpatterned substrate, for (11·0) reflection, however, FWHM for a patterned substrate was much narrower than that for a unpatterned substrate. The normalized FWHM for all reflections decreases as the incidence angle of X-ray decreases. The results indicate that the crystalline quality in the surface region of the epilayer on a patterned substrate was especially improved because the penetration depth of X-ray depends on the incidence angle. The intensity of PL peak of the epilayer for a patterned substrate increased compared to that for a unpatterned substrate, and the increase in PL intensity is attributed to the reduction in dislocation density at the surface region revealed the by X-ray results.

X-Ray Reflection, A New Tool for Investigating Layered Structures and Interfaces

1991 ◽  
Vol 35 (A) ◽  
pp. 127-135 ◽  
Author(s):  
Bruno Lengeler
Keyword(s):  
Angular Dependence ◽  
Diffuse Scattering ◽  
Specular Reflection ◽  
Condensed Matter ◽  
Grazing Incidence ◽  
Total Reflection ◽  
Interface Roughness ◽  
X Rays ◽  
X Ray ◽  
X Ray Absorption

AbstractAt grazing incidence all X-ray techniques become surface sensitive. Far below the angle of total reflection the X-rays penetrate only 20 to 70 Å into condensed matter. X-ray reflectivity measurements give the density and the thickness of layers on substrates and the roughness of external and internal interfaces. The diffuse scattering in the vicinity of the specular reflection gives, besides the interface roughness, also the height-height correlation of the surface. From the angular dependence of the fluorescence intensity, emitted as a consequence of X-ray absorption, the depth profile of the absorbing species can be deduced. Artificial periodic multilayers give rise to Bragg reflexes and to standing X-ray wave fields, the angular dependence of which give the distribution of atomic species in the periodic stack. A number of examples illustrate the possibilities of the technique.

Fabrication and characterization of replicated and lacquer-coated grazing incidence optics for x-ray astronomy

1992 ◽  
Author(s):  
Melville P. Ulmer ◽  
Rudy H. Haidle ◽  
Robert I. Altkorn ◽  
P. Georgopoulos ◽  
Brian G. Rodricks ◽  
...  
Keyword(s):  
Grazing Incidence ◽  
X Ray ◽  
Grazing Incidence Optics ◽  
Fabrication And Characterization
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